Lecture9 Dynamic
Lecture9 Dynamic
Hyeon-Min Bae
off
Clk Mp Clk Mp on
1
Out Out
In1 CL ((AB)+C)
A
In2 PDN
C
In3
B
Clk Me
off
Clk Me on
t pLH = 0
CLVDD CL is reduced because no PUN and
t pHL = because output node drives smaller
2I DN
cap
IDN is reduced due to presence of
foot transistor
à Net effect is reduction of tpHL
(reduced CL is dominating)
• Pdyn=CLVDD2f0à1
• Compared to static CMOS: CL¯, f0à1
• Dynamic gates: f0à1=fCLKp0
• Static gates: f0à1=fCLKp0p1
• EX) NOR2
– PA=0.5, PB=0.5, P1=0.25, P0=0.75
– Dynamic gate f0à1=0.75fclk
– Static gate f0à1=0.188fclk
• But dynamic logic has no glitch. à no power
consumption with glitch à careful timing is
required
Keeper
Clk Mp Mkp
A Out
CL
B
Clk Me
Clk Me CB
Clk
Out
A A CL=50fF
Ca=15fF B B B !B Cb=15fF
Cc=15fF C C Cd=10fF
Clk
VDD
Clk Mp
Out
CL
A Ma
X
Ca
B=0 Mb
Cb
Clk Me
VDD
CLK Cx
B C Cx
Y Z
CLK CY Cz
GND
Clk Me
Clk Mp Out1 =1
Out2 =0
A=0 In
CL1 CL2
B=0
Clk Me
Out1
Voltage
Clk
In Out2
Time, ns
Clock feedthrough
Clk
Out
In1
In2 Voltage
In3 In &
Clk
In4 Out
Clk
Time, ns
Clock feedthrough
ΔV
Out2
Clk Me Clk Me
Clk
VDD VDD
VDD
Clk Mp Clk Mp Mr
Out1
Out2
In1
In2 PDN In4 PDN
In3
Can be eliminated!
Clk Me Clk Me
Inputs = 0
during precharge
off on
Clk Mp Mkp Mkp Mp Clk
Out = AB Out = AB
1 0 1 0
A
!A !B
B
Clk Me
Clk Mp Clk Me
1®1
Out1
1®0
In1 In4 PUN
In2 PDN In5
0®0
In3 0®1
Out2
(to PDN)
Clk Me Clk Mp