NUMERICALS

1. Which semiconductor in Table 1-1 has the largest Eg? the smallest?
What is the corresponding ? How is the column III component related
to Eg?

Ans- Write Eg of Ga, Si and As only

2. Calculate densities of Si and GaAs. The atomic weights of Si, Ga, and As
are 28.1, 69.7, and 74.9, respectively.

Density=mass/volume

Mass is the product of its molar mass (atomic weight) and the number of moles ( n),
and

volume is the product of the density of the material and its molar volume ( Vm).

The molar volume ( Vm) is the volume occupied by one mole of a substance and is
given by the reciprocal of the density:

Molar volume=1/Density

Then calculate for each material given. The molar volume

Density of each material is Mass x molar volume

5. Disadvantages of LOCOS: (1) high temperature and long oxidation time cause V1 shift, (2)
bird's beak, (3) not a planar surface, (4) exhibits oxide thinning effect. Advantages of shallow
trench isolation: (l) planar surface, (2) no high temperature processing and long oxidation
time, (3) no oxide thinning effect, (4) no bird's beak.

Ref slides and tecxt

6. In silicon, the lattice constant is 5.43 A. Assume a hard-sphere model (a) Calculate the radius
of a silicon atom, (b) Determine the density of silicon atoms in atoms/cm', (c) Use the
Avogadro constant to find the density of silicon.

Ans
A=5.43A
Get relation of a and r= calculate r
(b) Find n of atoms in cubic lattice . relation between n and a. Calculoate n in terms of
atoms/cm3
Find density with nxNa

7. Assuming that a 10-kg pure silicon charge used, what is the ..mount of boron thai must be
added to get the boron-doped silicon to have a resistivity of 0.01 fl-cm when one-half of the
ingot is grown
NA is the concentration of Boron atoms
Ea is the activation energy
NA = resistivity of the doped silicon/resistivity of pure silicon x e(Ea/KT)

Find NA, from relation between mass and number of moles find n
Mass of Si is given. Number of boron atoms and be found by multiplying n by Avagadro
number

8. The seed crystals used in the Czochralski process is usually necked down to a small diaineter
(5.5 mm) as a means to initiate dislocation-free growth. If die critical yield strength of silicon
is 2 x 106. calculate the maximum length of a silicon ingot 200 mm in diameter that can be
supported by such a seed.

Ingot is cylindrical in shape

Stress=Force/Area

Find Area A and

Force is m x g ( m-given, g is acceleration due to gravity

9. A p-type <l00> oriented silicon wafer with a resistivity of 10 ohm-cm in a wet oxidation
system to grow a field oxide of 0.45 m at 1050. Determine the timene required to grow
the oxide.
Using De Grove model
The growth rate of thermal oxide ( Rox) can be given by the Deal-Grove model, which
is often used for wet oxidation of silicon. The Deal-Grove model for thermal oxidation
of silicon is given by

Rox=Aexp(-Ea/kT)

Oxide thickness tox and Rox

10. How many c hips of area 100 mm" can be placed on a wafer 300 mm in diameter? Explain
your assumptions regarding the chip shape and unused wafer perimeter.

Chips are arranged in a regular grid pattern, and the entire wafer is used efficiently.
Also, let's assume that the chips are square, with an area of 100 mm2.
The side length ( s) of each square chip can be calculated as follows
S=sqrt of area of the chip
Now, let's consider how many of these square chips can fit on the wafer without wasting any
space. The maximum number of chips in one dimension (either horizontally or vertically) can
be determined by dividing the diameter of the wafer by the side length of a chip
Number of chips in one dimension- Chip side length/wafer diameter
Total number of chips = (No of chips in one dimension) 2

11. For a class 100 clean room, find the number of dust particles per cubic meter with
particle sizes (a) between 0 .5 and 1 micrometer b) between 1 and 2 micrometer, and
(c) above 2 micrometer
100 particles in 1 cubic meter
Calculate from this for different sizes

12. Calculate the average etch rate and etch rate uniformity on a 200-inm diameter
silicon wafer, assuming the etch rates at the center, left, right, top. and bottom of the
wafer are 750,812, 765, 743 and795nm/minrespectively.

Average etch rate- take average of all

14. Assume that a 100-mm diameter CaAs wafer is uniformly implanted with 100-keV
zinc ions for 5 minutes with a constant ion beam current of 10micro amperes. What
are the ion dose unit area and the peak ion concentration?

Ion dosage= Ton beam currect x time

Calculate area o the wafer Pi r2

15. A metal line (L = 20 micrometer, W= 0.25 micro meter) has a sheet resistanceof 5 ohm/sq
Calculate the resistance of the metal line
Resistance=sheet resistance x L/W

16. Why is silane more often used for polysilicon deposition than silicon chloride?
17. To avoid electro migration problems, the maximum allowed current density in an aluminum
runner is about 5 x 105 A/cm2 If the runner is 2 mm long. 1 microm wide, and nominally 1
microm thick, and if 20% of the runner length passes over steps and is only 0.5 microm thick
there, find the total resistance of the runner if the resistivity is 3 x 10 -6 ohm cm Find the
maximum voltage that can be applied across the runner
first
to find the lengths of both the 1 μm thick and 0.5 μm thick segments of the runner.

Next Calculate the cross-sectional area for each segment Next,

Then Calculate the resistance for each segment

Go ahead to Calculate total resistance

Find the maximum current and voltage

Maximum voltage = total resistance × maximum current

18. Ion Implantation Beam of energetic dopant ions is directed into surface of wafer. Ion
energies typically 5 - 200 keV. This leads to implantation (burial) of the ions in the substrate.
What happens at the substrate?

19. (a) Calculate the Dt product required to form a 0.2µm-deep source-drain diffusion for an
NMOS transistor using a solid-solubility-limited arsenic deposition at 1000°C into a wafer
with a background concentration of 3×1016 cm-3
(b) ) What is the diffusion time? Does this time seem like a reasonable process?
 Use the formula with erf

20. Given a uniformly n-type ion-implanted layer with thickness t = 1 um and doping
concentration Nd = 1017 cm-3

.a)What is the sheet resistance?

b)What is the resistance of the layout shown below? Assume that the contacts each
contribute .65 squares.

c)By adding additional dopants, we make a new n-type ion-implanted resistor with an
average doping concentration Nd1 = 2x1017cm-3 over the depth 0 < d < 0.5 and Nd2 =
1017cm-3 over the depth 0.5µm < d < 1µm. Find the new sheet resistance
Use

Rs =1/qnNd