Basic Electronics MCQ’s

Basic Electronics
PPSC MCQ’S
1. Every known element has
(a) The same type of atoms (b) the same number of atoms
(c) A unique type of atom (d) several different types of atoms
2. An atom consists of
(a) One nucleus and only one electron (b) one nucleus and one or more electrons
(c) Protons, electrons, and neutrons (d) both (b) and (c)
3. The nucleus of an atom is made up of
(a) Protons and neutrons (b) electrons
(c) Electrons and protons (d) electrons and neutrons
4. Valence electrons are
(a) In the closest orbit to the nucleus (b) in the most distant orbit from the nucleus
(c) In various orbits around the nucleus (d) not associated with a particular atom
5. A positive ion is formed when
(a) A valence electron breaks away from the atom
(b) There are more holes than electrons in the outer orbit
(c) Two atoms bond together
(d) An atom gains an extra valence electron
6. the most widely used semiconductor material in electronic devices is
(a) Germanium ` (b) carbon (c) copper (d) silicon
7. The difference between an insulator and a semiconductor is
(a) A wider energy gap between the valence band and the conduction band
(b) The number of free electrons
(c) The atomic structure (d) All of these
8. The energy band in which free electrons exist is the
(a) First band (b) second band (c) conduction band (d) valence band
9. In a semiconductor crystal, the atoms are held together by
(a) The interaction of valence electrons (b) forces of attraction
(c) Covalent bonds (d) All of these
10. The atomic number of silicon is
(a) 8 (b) 2 (c) 4 (d) 14
11. The atomic number of germanium is
(a) 8 (b) 2 (c) 4 (d) 32
12. The valence shell in a silicon atom has the number designation of
(a) 0 (b) 1 (c) 2 (d) 3
13. Each atom in a silicon crystal has
(a) Four valence electrons
(b) Four conduction electrons
(c) Eight valence electrons, four of its own and four shared
(d) No valence electrons because all are shared with other atoms
14. Electron-hole pairs are produced by
(a) Recombination (b) thermal energy (c) ionization (d) doping

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15. Recombination is when

(a) An electron falls into a hole (b) a positive and a negative ion bond together
(c) A valence electron becomes a conduction electron (d) a crystal is formed
16. The current in a semiconductor is produced by
(a) Electrons only (b) holes only (c) negative ions (d) both electrons and holes
17. In an intrinsic semiconductor
(a) There are no free electrons (b) the free electrons are thermally produced
(c) There are as many electrons as there are holes (d) both (b) and (c)
18. The process of adding an impurity to an intrinsic semiconductor is called
(a) Doping (b) recombination (c) atomic modification (d) ionization
19. A trivalent impurity is added to silicon to create
(a) Germanium (b) a p-type semiconductor
(c) An n-type semiconductor (d) a depletion region
20. The purpose of a pentavalent impurity is to
(a) Reduce the conductivity of silicon (b) increase the number of holes
(c) Increase the number of free electrons (d) create minority carriers
21. The majority carriers in an n-type semiconductor are
(a) Holes (b) valence electrons (c) conduction electrons (d) protons
22. Holes in an n-type semiconductor are
(a) Minority carriers that are thermally produced
(b) Minority carriers that are produced by doping
(c) Majority carriers that are thermally produced
(d) Majority carriers that are produced by doping
23. A pn junction is formed by
(a) The recombination of electrons and holes (b) ionization
(c) The boundary of a p-type and an n-type material
(d) The collision of a proton and a neutron
24. The depletion region is created by
(a) Ionization (b) diffusion (c) recombination (d) All of these
25. The depletion region consists of
(a) Nothing but minority carriers (b) positive and negative ions
(c) No majority carriers (d) both (b) and (c)
26. The term bias means
(a) The ratio of majority carriers to minority carriers
(b) The amount of current across a diode
(c) A dc voltage is applied to control the operation of a device
(d) Neither (a), (b), nor (c)
27. To forward-bias a diode,
(a) An external voltage is applied that is positive at the anode and negative at the cathode
(b) An external voltage is applied that is negative at the anode and positive at the cathode
(c) An external voltage is applied that is positive at the p region and negative at the n region
(d) Both (a) and (c)
28. When a diode is forward-biased,

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(a) The only current is hole current

(b) The only current is electron current
(c) The only current is produced by majority carriers
(d) The current is produced by both holes and electrons
29. Although current is blocked in reverse bias,
(a) There is some current due to majority carriers
(b) There is a very small current due to minority carriers
(c) There is an avalanche current
30. For a silicon diode, the value of the forward-bias voltage typically
(a) Must be greater than 0.3 V (b) must be greater than 0.7 V
(c) Depends on the width of the depletion region (d) depends on the concentration of majority
carriers
31. When forward-biased, a diode
(a) Blocks current (b) conducts current
(c) Has a high resistance (d) drops a large voltage
32. A diode is normally operated in
(a) Reverse breakdown (b) the forward-bias region
(c) The reverse-bias region (d) either (b) or (c)
33. The dynamic resistance can be important when a diode is
(a) reverse-biased (b) forward-biased
(c) In reverse breakdown (d) unbiased
34. The V-I curve for a diode shows
(a) The voltage across the diode for a given current
(b) The amount of current for a given bias voltage
(c) The power dissipation (d) none of these
35. Ideally, a diode can be represented by a;
(a) Voltage source (b) resistance (c) switch (d) all of these
36. in the practical diode model;
(a) The barrier potential is taken into account
(b) The forward dynamic resistance is taken into account
(c) none of these (d) both (a) and (b)
37. In the complete diode model,
(a) The barrier potential is taken into account
(b) The forward dynamic resistance is taken into account
(c) The reverse resistance is taken into account (d) all of these
38. The average value of a half-wave rectified voltage with a peak value of 200 V is
(a) 63.7 V (b) 127.2 V (c) 141 V (d) 0 V
39. When a 60 Hz sinusoidal voltage is applied to the input of a half-wave rectifier, the
output frequency is;
(a) 120 Hz (b) 30 Hz (c) 60 Hz (d) 0 Hz
40. The peak value of the input to a half-wave rectifier is 10 V. The approximate peak value
of the output is
(a) 10 V (b) 3.18 V (c) 10.7 V (d) 9.3 V

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41. In a certain positive clamper circuit, a 120 V rms sine wave is applied to the input. The
dc value of the output is
(a) 119.3 V (b) 169 V (c) 60 V (d) 75.6 V
42. The average value of a full-wave rectified voltage with a peak value of 75 V is;
(a) 53 V (b) 47.8 V (c) 37.5 V (d) 23.9 V
43. When a 60 Hz sinusoidal voltage is applied to the input of a full-wave rectifier, the
output frequency is;
(a) 120 Hz (b) 60 Hz (c) 240 Hz (d) 0 Hz
44. The total secondary voltage in a center-tapped full-wave rectifier is 125 V rms.
neglecting the diode drop, the rms output voltage is;
(a) 125 V (b) 177 V (c) 100 V (d) 62.5 V
45. When the peak output voltage is 100 V, the PIV for each diode in a center-tapped full-
wave rectifier is (neglecting the diode drop);
(a) 100 V (b) 200 V (c) 141 V (d) 50 V
46. When the rms output voltage of a bridge full-wave rectifier is 20 V, the peak inverse
voltage across the diodes is (neglecting the diode drop);
(a) 20 V (b) 40 V (c) 28.3 V (d) 56.6 V
47. The ideal dc output voltage of a capacitor-input filter is equal to
(a) The peak value of the rectified voltage (b) the average value of the rectified voltage
(c) The rms value of the rectified voltage (d) none of these
48. A certain power-supply filter produces an output with a ripple of 100 mV peak-to-peak
and a dc value of 20 V. The ripple factor is
(a) 0.05 (b) 0.005 (c) 0.00005 (d) 0.02
49. A 60 V peak full-wave rectified voltage is applied to a capacitor-input filter. If f = 120
Hz, RL = 10 k𝛀 , and C = 10𝝁 F, the ripple voltage is
(a) 0.6 V (b) 6 mV (c) 5.0 V (d) 2.88 V
50. If the load resistance of a capacitor-filtered full-wave rectifier is reduced, the ripple
voltage
(a) Increases (b) decreases (c) is not affected (d) has a different frequency
51. Line regulation is determined by
(a) Load current (b) Zener current and load current
(c) Changes in load resistance and output voltage (d) changes in output voltage and input
voltage
52. Load regulation is determined by
(a) Changes in load current and input voltage (b) changes in load current and
output voltage
(c) Changes in load resistance and input voltage (d) changes in Zener current and load
current
53. A 10 V peak-to-peak sinusoidal voltage is applied across a silicon diode and series
resistor. The maximum voltage across the diode is
(a) 9.3 V (b) 5 V (c) 0.7 V (d) 10 V

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54. In a certain biased limiter, the bias voltage is 5 V and the input is a 10 V peak sine
wave. If the positive terminal of the bias voltage is connected to the cathode of the diode,
the maximum voltage at the anode is
(a) 10 V (b) 5 V (c) 5.7 V (d) 0.7 V
55. The cathode of a Zener diode in a voltage regulator is normally;
(a) More positive than the anode (b) more negative than the anode
(c) At +0.7 V (d) grounded
56. If a certain Zener diode has a Zener voltage of 3.6 V, it operates in;
(a) Regulated breakdown (b) Zener breakdown
(c) Forward conduction (d) avalanche breakdown
57. For a certain 12 V Zener diode, a 10 mA change in Zener current produces a 0.1 V
change in Zener voltage. The Zener impedance for this current range is;
(a) 1 Ω (b) 100 Ω (c) 10 Ω (d) 0.1 Ω
58. The datasheet for a particular Zener gives VZ 10 V at IZ 500 mA. ZZ for these
conditions is
(a) 50 Ω (b) 20 Ω (c) 10 Ω (d) unknown
59. A no-load condition means that
(a) The load has infinite resistance (b) the load has zero resistance
(c) The output terminals are open (d) both (a) and (c)
60. A varactor diode exhibits
(a) A variable capacitance that depends on reverse voltage
(b) A variable resistance that depends on reverse voltage
(c) A variable capacitance that depends on forward current
(d) A constant capacitance over a range of reverse voltages
61. An LED
(a) Emits light when reverse-biased (b) senses light when reverse-biased
(c) Emits light when forward-biased (d) acts as a variable resistance
62. Compared to a visible red LED, an infrared LED
(a) Produces light with shorter wavelengths (b) produces light of all wavelengths
(c) Produces only one color of light (d) produces light with longer wavelengths
63. Compared to incandescent bulbs, high-intensity LEDs
(a) Are brighter (b) have a much longer life (c) use less power (d) all of these
64. An OLED differs from a conventional LED in that it
(a) Requires no bias voltage
(b) Has layers of organic material in the place of a pn junction
(c) Can be implemented using an inkjet printing process (d) both (b) and (c)
65. An infrared LED is optically coupled to a photodiode. When the LED is turned off, the
reading on an ammeter in series with the reverse-biased photodiode will
(a) not change (b) decrease (c) increase (d) fluctuate
66. The internal resistance of a photodiode
(a) Increases with light intensity when reverse-biased
(b) Decreases with light intensity when reverse-biased
(c) Increases with light intensity when forward-biased

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(d) Decreases with light intensity when forward-biased

67. A laser diode produces
(a) Incoherent light (b) coherent light (c) monochromatic light (d) both (b) and (c)
68. A diode that has a negative resistance characteristic is the
(a) Schottky diode (b) tunnel diode (c) laser diode (d) hot-carrier diode
69. In order for a system to function properly, the various types of circuits that make up
the system must be
(a) Properly biased (b) properly connected
(c) Properly interfaced (d) all of the above
70. The three terminals of a bipolar junction transistor are called;
(a) p, n, p (b) n, p, n (c) input, output, ground (d) base, emitter, collector
71. In a pnp transistor, the p regions are
(a) Base and emitter (b) base and collector
(c) Emitter and collector (d) none of these
72. For operation as an amplifier, the base of an npn transistor must be;
(a) Positive with respect to the emitter (b) negative with respect to the emitter
(c) Positive with respect to the collector (d) 0 V
73. The emitter current is always
(a) Greater than the base current (b) less than the collector current
(c) greater than the collector current (d) Both (a) and (c)
74. The 𝜷DC of a transistor is its
(a) Current gain (b) voltage gain (c) power gain (d) internal resistance
75. If IC is 50 times larger than IB, then 𝜷DC is
(a) 0.02 (b) 100 (c) 50 (d) 500
76. The approximate voltage across the forward-biased base-emitter junction of a silicon
BJT is
(a) 0 V (b) 0.7 V (c) 0.3 V (d) VBB
77. The bias condition for a transistor to be used as a linear amplifier is called
(a) forward-reverse (b) forward-forward (c) reverse-reverse (d) collector bias
78. If the output of a transistor amplifier is 5 V rms and the input is 100 mV rms, the
voltage gain is
(a) 5 (b) 500 (c) 50 (d) 100
79. When a lowercase is used in relation to a transistor, it refers to
(a) a low resistance (b) a wire resistance
(c) an internal ac resistance (d) a source resistance
80. In a given transistor amplifier Rc = 2.2K𝛀, re = 20𝛀 and the voltage gain is
(a) 2.2 (b) 110 (c) 20 (d) 44
81. When operated in cutoff and saturation, the transistor acts like a
(a) Linear amplifier (b) switch (c) variable capacitor (d) variable resistor
82. In cutoff, VCE is
(a) Minimum (b) maximum (c) equal to VCC (d) Both (b) and (c)
83. In saturation, VCE is
(a) 0.7 V (b) equal to VCC (c) minimum (d) maximum

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84. To saturate a BJT,

(a) IB = IC (sat) (b) IB > IC (sat)/𝛽𝐷𝐶
(c) VCC must be at least 10 V (d) the emitter must be grounded
85. Once in saturation, a further increase in base current will
(a) Cause the collector current to increase (b) not affect the collector current
(c) Cause the collector current to decrease (d) turn the transistor off
86. In a transistor amplifier, if the base-emitter junction is open, the collector voltage is
(a) VCC (b) 0 V (c) floating (d) 0.2 V
87. A small-signal amplifier
(a) Uses only a small portion of its load line
(b) Always has an output signal in the mV range
(c) Goes into saturation once on each input cycle
(d) Is always a common-emitter amplifier
88. A certain common-emitter amplifier has a voltage gain of 100. If the emitter bypass
capacitor is removed,
(a) The circuit will become unstable (b) the voltage gain will decrease
(c) The voltage gain will increase (d) the Q-point will shift
89. The input resistance of a common-base amplifier is
(a) Very low (b) very high (c) the same as a CE (d) the same as a CC

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