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EDC Mid1 Obj June, 23

The document contains 20 multiple choice questions testing knowledge of semiconductor devices and circuits such as diodes, transistors, and rectifiers. Key topics covered include the properties of semiconductors, diode and transistor configurations, rectifier types and their operating characteristics like efficiency, ripple factor and peak inverse voltage. The questions assess understanding of fundamental electronic components and how they are used in common applications.

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20 views4 pages

EDC Mid1 Obj June, 23

The document contains 20 multiple choice questions testing knowledge of semiconductor devices and circuits such as diodes, transistors, and rectifiers. Key topics covered include the properties of semiconductors, diode and transistor configurations, rectifier types and their operating characteristics like efficiency, ripple factor and peak inverse voltage. The questions assess understanding of fundamental electronic components and how they are used in common applications.

Uploaded by

smskdevil008
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Multiple Choice Questions

1. The resistivity of a semiconductor [b]


(a) increases as the temperature increases (b) decreases as the temperature
increases (c) remains constant even when temperature varies (d) none of
the above
2. A diode is a ____________ terminal device. [b]
(a) four (b) two (c) one (d) three
3. A bridge Rectifier consists of ____________ Diodes.[4]

(a) 4 (b) 5 (c) 7 (d) 5


4. A half wave rectifier operates in ____________ . [a]

(a) Positive half Cycle (b) Negative half Cycle (c) both (d) None of the
above
5. The ratio of DC output power to AC input power is known as ____________[a]

(a) Rectifier efficiency (b) Form Factor (c) Peak Factor (d) Ripple
factor
6. A bipolar junction Transistor is a ____________ terminal semiconductor device. [a]

(a) Three (b) Six (c) Four (d) Two


7. There are ____________ types of Transistor Configuration. [d]
(a) Eight (b) Six (c) Four (d) Three

8. 23. The Transformer Utilization Factor for the full wave rectifier is [b]
(a)1.11 (b)0.693 (c) 0.812 (d) 1.21
9. A PNP transistor is made up of [c ]
(a) Silicon (b) Germanium (c) either Silicon or Germanium (d) None
10. In a full wave rectifier , the diode conducts for [b]
(a)one half cycle (b) Full cycle (c)alternate half cycle (d)none of these.
11. The element having four Valence electron is[c]
(a) Silicon (b)Germanium (c)both (d)None of the above

12. Valence Electrons are [c]


(a) loosely packed Electrons (b) mobile Electrons
(c)electron present in outermost orbit (d) None of the above
13. In the forward biased PN Junction Diode, the [a]
(a)postive terminal of the battery is connected to the P side and negative side is connected
to N.
(b)postive terminal of the battery is connected to the N side and negative side is
connected to P.
(c)N side is connected directly to the P side.
(d)junction is earthed

14.When the holes leaves the p type material to fill electrons in the n material , the process is
called [c]
(a)mixing (b)depletion (c)diffission (d)none of the above.

15.When Diode is forward biased, the [b]


(a)barrier potential increases (b) barrier potential decreases
(c)majority current decreases (d) minority current decreases.

16. A rectifier is used to [a]


(a) convert AC voltage to DC voltage (b) convert DC voltage to AC voltage
(c) both (d) Convert voltage to current.
17. The ripple factor for half wave rectifier is [a]
(a)1.21 (b)0.482 (c)0.406 (d) 0.121

18. The Peak inverse Voltage of half wave rectifier is [a]


(a)Vm (b)2Vm (c)vm /2 (d)3 Vm
19. In a full wave rectifier , the diode conducts for [b]
(a)one half cycle (b) Full cycle (c)alternate half cycle (d)none of these.

20. In a transistor, the region that is lightly doped and very thin is the [b]
(a)emitter (b)base (c)collector (d) none of the above

Fill in the blanks.

1. Symbol for a PN junction diode is given as ___________________.

2. The PIV of the Bridge rectifier is _______ Vm _____________.

3. Transition capacitance can be expressed as ______CT = dQ/dV______________.

4. A PN diode can be used for ______rectifiers______________.

5. ____Rectifiers_____________ is an electronic device used to convert AC into DC.

6. The maximum reverse voltage that a diode can withstand without destroying the junction

is known as _____PIV_______________.

7. The maximum efficiency for a bridge rectifier is ____81.2%________________.

8. BJT can be used for ____Amplification______________.

9. The three portion of transistor are Emitter, Base & ____Collector________________.

10. The ripple factor of a half wave rectifier is ____1.21______________.

11. Symbol for a Bipolar junction Transistor is given as ____________________.

12. The efficiency of the Full wave rectifier is ______81.2 %______________.

13. Diffusion capacitance can be expressed as _____ CD = dQ/dV _______________.

14. A Bipolar junction Transistor can be used for ____Oscillator circuit________________.

15. ______Rectifier___________ is an electronic device used to convert AC into DC.


16. The maximum reverse voltage that a diode can withstand without destroying the junction

is known as ____Peak Inverse Voltage________________.

17. The maximum efficiency for a bridge rectifier is _____81.2%_______________.

18. The efficeincy of a half wave rectifier is ___40.6%_______________.

19. The peak factor of half wave rectifier is _____2_____________.

20. A PN junction diode can operate in only ____forward___________ biasing.

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