MC34001 STMicroelectronics
MC34001 STMicroelectronics
MC34001/A/B
MC35001/A/B
GENERAL PURPOSE
SINGLE JFET OPERATIONAL AMPLIFIERS
.. STAGE
INTERNAL FREQUENCY COMPENSATION
DESCRIPTION
These circuits are high speed J–FET input single ORDER CODES
operational amplifiers incorporating well matched,
Package
high voltage J–FET and bipolar transistors in a Part Number Temperature
N D
monolithic integrated circuit. o o
MC34001/A/B 0 C, +70 C • •
The devices feature high slew rates, low input
33001-01.TBL
o o
bias and offset current, and low offset voltage tem- MC33001/A/B –40 C, +105 C • •
o o
perature coefficient. MC35001/A/B –55 C, +125 C • •
1 - Offset Null 1
1 8 2 - Inverting input
3 - Non-inverting input
2 - 7 4 - VCC-
5 - Offset Null 2
6 - Output
3 + 6 7 - VCC+
8 - N.C.
4 5
SCHEMATIC DIAGRAM
V CC
Non-inverting
input
Inverting
input
100 Ω
200 Ω
Output
100 Ω
30k
8.2k
V CC
33001-03.EPS
Offset Null1 Offset Null2
MC34001
N1 N2
100k Ω
33001-04.EPS
V CC
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MC33001/A/B - MC34001/A/B - MC35001/A/B
ELECTRICAL CHARACTERISTICS
VCC = ±15V, Tamb = 25oC (unless otherwise specified)
MC35001A,B MC35001
MC33001A,B MC33001
Symbol Parameter MC34001A,B MC34001 Unit
Min. Typ. Max. Min. Typ. Max.
Vio Input Offset Voltage (RS ≤ 10kΩ) mV
Tamb = 25oC 3 10
MC35001B, MC34001B, MC33001B 3 5
MC35001A, MC34001A, MC33001A 0.4 2
Tmin. ≤ Tamb ≤ Tmax. 13
MC35001B, MC34001B, MC33001B 7
MC35001A, MC34001A, MC33001A 4
DVio Input Offset Voltage Drift 10 10 µV/oC
Iio Input Offset Current *
Tamb = 25oC 5 100 5 100 pA
Tmin. ≤ Tamb ≤ Tmax. 4 4 nA
Iib Input Bias Current *
Tamb = 25oC 20 200 20 200 pA
Tmin. ≤ Tamb ≤ Tmax. 20 20 nA
Avd Large Signal Voltage Gain (RL = 2kΩ, VO = ±10V) V/mV
Tamb = 25oC 50 200 25 200
Tmin. ≤ Tamb ≤ Tmax. 25 15
SVR Supply Voltage Rejection Ratio (RS ≤10kΩ) dB
Tamb = 25oC 80 86 70 86
Tmin. ≤ Tamb ≤ Tmax. 80 70
ICC Supply Current, no Load mA
o
Tamb = 25 C 1.4 2.5 1.4 2.5
Tmin. ≤ Tamb ≤ Tmax. 2.8 2.8
Vicm Input Common Mode Voltage Range ±11 +15 ±11 +15 V
-12 -12
CMR Common Mode Rejection Ratio (RS ≤ 10kΩ) dB
Tamb = 25oC 80 86 70 86
Tmin. ≤ Tamb ≤ Tmax. 80 70
Ios Output Short-circuit Current mA
Tamb = 25oC 10 40 60 10 40 60
Tmin. ≤ Tamb ≤ Tmax. 10 60 10 60
±VOPP Output Voltage Swing V
o
Tamb = 25 C RL = 2kΩ 10 12 10 12
RL = 10kΩ 12 13.5 12 13.5
Tmin. ≤ Tamb ≤ Tmax. RL = 2kΩ 10 10
RL = 10kΩ 12 12
SR Slew Rate (Vin = 10V, RL = 2kΩ, CL = 100pF, V/µs
Tamb = 25oC, unity gain) 12 16 12 16
tr Rise Time (Vin = 20mV, RL = 2kΩ, CL = 100pF, µs
o
Tamb = 25 C, unity gain) 0.1 0.1
KOV Overshoot (Vin = 20mV, RL = 2kΩ, CL = 100pF, %
Tamb = 25oC, unity gain) 10 10
GBP Gain Bandwidth Product (f = 100kHz, MHz
Tamb = 25oC, Vin = 10mV, RL = 2kΩ, CL = 100pF) 2.5 4 2.5 4
Ri Input Resistance 1012 1012 Ω
THD Total Harmonic Distortion (f = 1kHz, AV = 20dB, %
o
RL = 2kΩ, CL = 100pF, Tamb = 25 C, VO = 2VPP) 0.01 0.01
en Equivalent Input Noise Voltage nV
33001-03.TBL
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MC33001/A/B - MC34001/A/B - MC35001/A/B
30 30
V CC = 15V R L = 2 kΩ R L= 10kΩ
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE (V)
V CC = 10V
15 15
VCC= 5V
10 10
V CC = 5V
5 5
0 0
100 1K 10K 100K 1M 10M 100 1K 10K 100K 1M 10M
33001-05.EPS
33001-06.EPS
FREQUENCY (Hz) FREQUENCY (Hz)
30
Tamb = +25˚C 30
MAXIMUM PEAK-TO-PEAK OUTPUT
V CC = 15V
MAXIMUM PEAK-TO-PEAK OUTPUT
25
R L = 2k Ω 25
20 See Figure 2
VOLTAGE (V)
20
VOLTAGE (V)
15 R L = 1 0 kΩ
15
Tamb = -55˚C R L = 2 kΩ
10
10
5 V C C = 15 V
5
Tamb = +125˚C See Fi gure 2
0
0
10k 40k 100k 400k 1M 4M 10M -75 -5 0 -25 0 25 50 75 -5 0 125
33001-08.EPS
33001-07.EPS
FREQUENCY (Hz) TE MP ER AT UR E (˚ C)
30 30
MAXIMUM PEAK-TO-PEAK OUTPUT
V CC = 15V RL = 10 kΩ
25 Tamb = +25˚C 25
See Figure 2 Tamb = +25˚C
20
VOLTAGE (V)
20
VOLTAGE (V)
15 15
10
10
5 5
0
0.1 0.2 0.4 0.7 1 2 4 7 10 0 2 4 6 8 10 12 14 16
SUPPLY VOLTAGE ( V)
33001-09.EPS
33001-10.EPS
LOAD RESISTANCE (k Ω )
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MC33001/A/B - MC34001/A/B - MC35001/A/B
100 1000
V CC = 15V
400
INPUT BIAS CURRENT (nA)
10 200
DIFFERENTIAL VOLTAGE
AMPLIFICATION (V/V)
100
1 40
20
10 V CC = 15V
0.1 V O = 10V
4
2 R L = 2k Ω
0.01 1
-50 -25 0 25 50 75 100 125 -75 -50 -25 0 25 50 75 100 125
33001-11.EPS
33001-12.EPS
TEMPERATURE (˚C)
TEMPERATURE (˚C)
6 250
10 V CC = 15V
VCC = 5V to 15V 225
TOTAL POWER DISSIPATION (mW)
33001-14.EPS
FREQUENCY (Hz) TEMPERATURE (˚C)
2.0 2.0
SUPPLY CURRENT (mA)
33001-16.EPS
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MC33001/A/B - MC34001/A/B - MC35001/A/B
89 6
R L = 10 kΩ
COMMON MODE MODE REJECTION
OUTPUT
86 0
(V)
V C C= 15V
85 -2 R L = 2 kΩ
C L = 100pF
84 -4
T
a m b = +25˚ C
83 -6
-75 -50 -25 0 25 50 75 100 125 0 0.5 1 1.5 2 2.5 3 3.5
33001-18.EPS
33001-17.EPS
TEMPERATURE (˚C) TIME ( µs)
28 70
24 VCC = 15V
OVERSHOOT 60
OUTPUT VOLTAGE (mV)
A V = 10
EQUIVALENT INPUT NOISE
20
R S = 100 Ω
90%
50
VOLTAGE (nV/VHz)
16 T amb = +25˚C
40
12
30
8
V = 15V 20
CC
4 R L = 2k Ω
10%
0 10
Tamb = +25˚C
tr 0
-4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 40 100 400 1k 4k 10k 40k 100k
33001-19.EPS
33001-20.EPS
TIME ( µs) FREQUENCY (Hz)
1
V VCC = = 15V 15V
TOTAL HARMONIC DISTORTION
CC
0.4
A AV V= =1 1
V VO O(rms) = =6V6V
(rms)
0.1
T amb= =+25˚C
T amb +25˚C
0.04
(%)
0.01
0.004
0.001
100 400 1k 4k 10k 40k 100k
33001-21.EPS
FREQUENCY (Hz)
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MC33001/A/B - MC34001/A/B - MC35001/A/B
10k Ω
- 1k Ω
eI -
MC34001 eo
M C34001 eo
eI CL = 100pF RL = 2kΩ
RL C L = 100pF
33001-23.EPS
33001-22.EPS
TYPICAL APPLICATIONS
(0.5Hz) SQUARE WAVE OSCILLATOR
R F = 100k Ω
3.3k Ω +15V
-
MC34001
1k Ω
-15V
C F= 3.3 µF
3.3k Ω
9.1k Ω
33001-24.EPS
f osc =
2 x R F CF
M C34001
R1 R2 1
fo = = 1kHz
2 x R 1 C1
C3
C3
C1 = C2 = = 100pF
R3 2
R1 + R2 + 2R3 + 1.5M Ω
33001-25.EPS
C1 C2
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MC33001/A/B - MC34001/A/B - MC35001/A/B
e4
A
I
a1
b1
L
B B1
b E
e
e3 Z
Z
8 5
F
PM-DIP8.EPS
1 4
Millimeters Inches
Dimensions
Min. Typ. Max. Min. Typ. Max.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0260
i 5.08 0.200
DIP8.TBL
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MC33001/A/B - MC34001/A/B - MC35001/A/B
a3
c1
C
a2
A
b e
b1
s
a1
e3 E
D
M
8 5 F
1 4
PM-SO8.EPS
Millimeters Inches
Dimensions
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45o (typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
SO8.TBL
S 8o (max.)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsi-
bility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which
may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON
Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes
and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical
components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
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