15. SEMICONDUCTOR ELECTRONICS Semiconductors - ee he teats chic nave Conductivity and resistivity imbetween conductors and insulators one Callesl semiconducors- Examples - Siliten Csi) 5 Germanium Cae) ete. E Band Theory of Solids- According to Gohr's theory ture axe well olefinel entagy Awels of electrons In an etom. If large. Number of atoms are bro close. 40 one another to form a crystal , they begin 4o influence each other. Dus to this infentdomnie. infevaction dere 4s no moolification in the ennrgy Jewels of the electrons in the outer shell but thee 12 Considerable modification in the energy Auwels of the electrons In the outer shells - FORBIDDEN [XN ' ENERGY GAP 1 2s? ENERGY ===> a2 x be a INTERATOMIC SPACING, 5 =e _ To Unckxstand modification in ensxgy levels of elechons Considtr. a silicon crystal containing N atoms. enSilicon Csi) atoms have fowr valance electors te. number of electrons in the outermost orbit is 4. Therefore the dotal number of valena elechons in the crysted of Si is 4N. CU) Th the Infercdomic spacing” of the si cdems is Very Lange C r=), then Hur Js no interctomic intevaction. Gi) When the interatomic spacing x is Luss then od but greeder than c,then there is no visible spliting of energy dwels. (ii) When the interatomic spacing vis equal to C, the energy of Outeamost Shel) ee ok neighbourin Silicon atoms stort changing ie the 4pditing of these energy davels occurs. Whereas Hurt js no change in the. energy. Awels of electrons in the inner shells. Gv) when interatomic spacing y Lies inbetween b and ¢ C berce)y instead of a Single 35 or 3p Lue), we. get a Jonge number of closely packed Aevels. Where 2N duwels Coreerponding 42 a Single as Lwel and 6N level for a Single 3p level of an isolated atom. Thia i of ensagy Luvels reclues the enngy between 3s - ap Adwels of free atom. ee TRS Collection of Closely spaced levels JA called an energy band- wv) When the indevoomle spacing y becomes equa) to b bud greater than a (r= b7a) the enesgy gap behoeen 3S and ap levels Completely disappes+ Tr such a Situation, st As not possible to Aistinguish between the electrons belonging 4o 38 and sp subshells. We can only soy thot 4N levels are filled ond 4n levels are. empty. (ez(Vi) When the interatomic spacing r becomes equod te @Cr=a) then the band of 4N filleal energy Awels is seporeteol from the band of 4n unfilled energy levels by an e catted entrgy bend gaps Binahte i, Bed C7 boy Eg The dower compl filled bond is coltad Vollance band omel te upper unfilled barol is Balled Concluction bemdl. The mmirnum energy requi uired for shifting electrons from volanee banel +o Conduction band He equal to enngy band gap (Eg). Difference between Metols (Conductors), Insulojors and semiconductors on the balsa of Enirgy Bands t- Grdacers Ce In Cenductrs the Conduchon and valance band portly overlap each other and tere 4s no enngy gab In between - cconoucTION BAND, EMPTY =, _conoucTion OVERLAPPED BAND . ery | Ss CONDUCTION | 23° BAND 3. a 1p! F ag a FLED VALENCE VALENCE I vance (N\\\\ BAND ‘BAND BAND \ Conoluctors Insutetors Semiconductors PesSemiconductors - Im semiconductrs the valence’ band 4d totally Filled amd the Conduction band is empty bub the Pp between ConclucHen bend and valance. band id quite small. It is Ass than 3 ev. Ey for gexmomjum Js o-72 ev omd for Silicon it is Ifev At zero Kelvin temperature semiconoluctoy behaves ar insutotor. Insubotors - Tn ywulotors the energy gap ts quite LE, > sev). Due 40 Large gap no elechon 4A able to from the valance band 40 the Conduchon band. Hence electical conduchen im these materials 4s impossible omd they behave ah insulotors. INTRINSIC SEMICONDUCTORS - A Pore Semmductyr which Js free of evens impurity is called intrinsic semiconductor. Examples- Silicon Csi) ancl Germanium Cae) - Rokk: EMPTY : ce CONDUCTION Le BAND ea = S ENERGY || Je,=0.722V ay . FILLED cab n bide VALENCE aa : a — BAND i 1 Silicon as 1s* 2872 p% ad ap> Germanium (32) 1s*2.s*2 pS actap aal?ys? up > Both the atoms (Si and Ge) have four valance electrons. eaTAL four valance electors of A geamainium otom form four Covalent bands by sharing Hare electrons of Neighbouring four geemanium atoms. The minimum enngy required to break a Covalent kerndl iA o-72 eu for Ge omd Lev for si. At room temperoturr when an electron breaks away from & Covalent bond , tre empty place or vacancy Lubt in the bord is Catled a hole. lohen an extemal elechie field is applecl, e free elechons and holes move in epposi te OUvections and Cmsttute A Cwwant. The number of free electrons amd holes are exactly equal in an “intrinsic Semitencductor. Also the Conductivity of intvinsic semiconcluctor is very Low, The hole Ls Consiclxesl as an actve partcle in the vetance bomol , having a positive charge equol to that of an electron. Doping :- en Doping is a process of adolition of @ olestvable Impurity atims 40 Q pure semiCencluctor +o moolify tts properties in a Controlled manner. The, impurity atoms added are catkol olepants. Doping 6$ a semicercluctor increases Its electyeal Concluctivity 4 Q great exter. Méthods of cleping : ~ (tL) Acll the impurity afoms in the melt of semicondlucty. Gi) Implant olepant atoms by bombaxing the Semitonduchy with their tons. Gil) Heatsthe Semicerductr in atmosphere 6$ clopant atoms. (3)EXTRINSIC SEMICONDUCTORS — F clopec} semiconductor or 4 semitsnoluctyr evi th Suitable impurity atm addel to ib is Called extrinsic semiconoluctor- Extrinsic semicenoluictors ane ef two typer- Cid n-type Semiconductor Gi) P-type Semiconductor (i) n-type Semiconductor— when @ pure Semicencluctor of silicon (si) or Germenium (Ge is oloped with pentavalent adoms which have’ five valance electrons (Phosphorous, Arsenic, antimony oy Bismuth) then it 44 collec! n-type Semiconductor. The four of the five valance electrons of the Impurity atoms lll form Covalent band with tee acljoining four atvms of the silleon , vohile tre fifth dectron” is free to move. Thus each tmpuaity atom added clorwtes one gree electron to the evystal, These impuuty atoms are called donor otoms. Since the Conduction ob electricity 44 clue to the motion of electrons ( te negotive 25) So thot the vesulting semiconoluctor” is ©. ni-tye or olonoy type Semiconductor. Tr n-type Semiconductors electrons arr majority Comers and holes au minority carrters.Cit) P- type Semiconductor — When a pure semiconductr of silicon Csi) or Germanium (Ge) it coped with @ Controlled amount of trivalent atoms which have three valance electrons CBoren, Aluminium, Gallium, Tndliam) then cf i4 Called P-type. semiconductor. The three valance electrons of the impurity odem will) form Covalent bands with the adjoining’ three. atoms of germanium (Ge), while there will be one incomplete Covalent bond witha neighbouring Ge atom, tWis clificiency of an electron creates a ‘hole’. The trivalent atoms are cabteol acceptor atoms and the Conduction of electricity occurs olue fo motion of holes (i-e- positive charges) 750 He resulting semiconductor JA Calcl p-type oy acceptor type semiconductor. Tn p-dype Semitondluctor elechons are minority Cormriers and holes dee majority Coniers. (oneast ace ae It is pure semiconducting material and no impurity atoms are added to it. Examples are crystalline forms of pure silicon and germanium. The number of free electrons in conduction band and the number of holes in valence band is exactly equal and very small indeed. Its electrical conductivity is low. Its electrical conductivity is a function of ‘temperature alone. Difference between N-type aA a seen ened Itis an extrinsic semiconductor which is obtained by doping the impurity atoms of Vth group of periodic table to the pure germanium or silicon semiconductor. The impurity atoms added, provide extra electrons in the structure, and are called donor atoms, The electrons are majority carriers and holes are minority carriers. The electron density (n,) is much greater than the hole density (n,), i, n, >> My, . The donor energy level is close tothe conduction band and far away from valence band. Distincton behwen Intrinsic and extrensic semconductors- ied eer Telecel Tis prepared by doping a small quantity of impurity atoms to the pure semiconducting material. Examples are silicon and germanium crystals with impurity atoms of arsenic, antimony, phos- phorous etc, or indium, boron, aluminium etc. The number of free electrons and holes is never equal. There is excess of electrons in n-type semiconductors and excess of holes in p-type semiconductors. Its electrical conductivity is high. Its electrical conductivity depends upon the temperature as well as on the quantity of impurity atoms doped in the structure. and P-type Semiconductors - Poth ide) lee), Uae Itisan extrinsic semicondustor whichis obtained by doping the impurity atoms of HI group of periodic table to the pure germanium or silicon semiconductor. ‘The impurity atoms added, create vacancies of electrons (i.e. holes) in the structure and are called acceptor atoms. ‘The holes are majority carriers and electrons are minority carriers. ‘The hole density (n,) is much greater than the electron density (n,), ie, my >>. 5. The acceptor energy levelis close to valence band and is far away from conduction band.P-N TUNCTION — when a p-type semicenoluctor cryésted As joineo| with an n-dype Aemiconcluctoy crystal ,Hren the resulting arrangement 4s Called a p-n junction ex junction clicde. Formation of PNTunction — To make. a P-n junction , the n-type omd P-type silicon tals axe cut indo thin wafers. Ty ona wafer af n-type silicon , an aluminium film 44 placed and heated to a high temperature 580%, aluminium diffuses into silicon and a p-type Aemiconductor is formed on an n-type Aemiconcluctor. Such 9 forenaction of P-tegion on n- region 44 Calleol Pon juncton, Diffusion and Drift - When P-n Juncton Jd formec| due to olifference in Contertvation of Change corriens ivi two regions of P-n Junction, the electrons from n-region oliffuse tro the junction into p-region and holes from p- region Aiffuse Into n-vegion. The motion of charge Carriers gives rise to diffusion curment across the junction. rakes, Bee Hole _ Due to diffusion of electrons and holes a Layer of positively chargeol donor atoms in n-region and a Layer of (ea)megedively Chorged acceptor atoms in p-region are created. Tria positive anol negative space change regions on both sides of P-n juncton willl form a region which has immobile tons and 44 calleol olepletion vegion. Due t positive anol negative Space ch region at p-n junction, an electric. fielol is foen aoe oe juncton. Bue 7 this electric field oleweloped at the junction ,an electron on p-siolt of the junction moves to n-sicle and a holes on n-siole Junction moves to p- Siole of function. The motion of these Charge carriers olus do electric field is Called olrift. As a redubt of it,a drift Current stants, whith is opposite in dlivection to the diffusion Curent - In the begining the diffusion Current is but deift Current id small. As the oliffusion process Conk- nues , the strength of electric flekd across tre junction ineveases and tuuby drift cuwunt increases: This process Condinues until the oliffusion cworent becomes equal to the olrift current. Now the p-n junction ds sald 4 be be in equili- brium Atate and thre 48 no Current across the pn function. At this stoge, the Potential bavries across the junction has maximum valut Ve. Now the movement of majori charge Cannes across the junction stops and the potential acts as @ barrier, hence Known as potential barrien At room temperature (300k) Va Ja about oav fer Ge cmd OT for Si. The value of Va increases with vise in demperatae for Ge and si.BIASING OF THE PN JUNCTION - Theve Akt two methods of biasing the pn junction- G) Fovweerd biasing Gi) Reverse biasing (1) Forward Biasng - A pen junction is Said to be forward biased if the positive Aerminal of the extemal battery is Connected to p-siole and the negative terminal to the n-sidle of P-n junction. oe B In forward biasing the forward Vol Opposes the. potential ihe Ve. As a resutt of st potenti) barrier and wiolth of depletion layer olecveases. The effective value of potential barrier in ferwand biasing is (Ve-V). (2) Reverse _Biasing :- A pn junction (s said +o be reverse biased if the positive terminal of the external battery is Connected te n-side and the negative terminal do p-Sicle of the Pon junction. Th reverse biasing the reverse biar voltage supports the potentential batrriey Va. As a result of sf barrier potential. oma width of olepletion region increases. (aTe effective value of barviey potenhal under yeverte bias 4d (Ve+V). ---- Depiation Layer ee tH Tn revwese biasing, there is no Conduction across the junction olue to majority carriers + However a fro minohity Cowuers of p-n junction oliede cress the junction ofter being accelerated by high reverse bias voltage~ They constitute “a cunrent which Js Callecl reverse Curent or leakage cwWdeand CHARACTERISTICS OF PN JUNCTION DIODE ~ Ci) Forward Chanactenstics - On plotting a graph between forward bias voltage and forvoord current we get te following graph. Forward Current ©} thresnota Noleee voltage (for silicon diodes Vm ~ 0.7V) Tt 48 found that beyond forward voltage V = VK, Called Knee voltage Cosy for Ge and o-7v for Si) the current (iz)throu the junction starts increasin vapioly oustith Seen and showing the dineay Voce But below the Knee voltage the variation m current is negligible amd the curye is non- near. Gi) Reverse Characteristics - On plotting a gmph behoean vewevse bias voltage and reverse Cwrent, we get the reverse characteristics as Shown in fig. From the cure we note that in reverse. biasing ob Pn junction , the Curent is very small (4 HA) and Js indspenclent on Voltage upto Certain reverse blas Voltage , Known as breakoloion vellage - REVERSE BIAS (V) 8 6 4 2 as (yal) INawuno ASYBATY Ih the veverse bias voltage exceeds the breakelown voltage, the reverse cwoent through the p-n junction wil! Increase abweptly. Ty trig cuvunt exceeds the rated value, of P-n junction (specified by manufacturer), the p-n junchin wold get damaged. astPN-DIoDE As A RECTIFIER- Rectifier is a clwice whieh 4s used for Converting alteenating current /Voltage into olivect cwrcent /Vorage. Thune ane two types of rectifier — C1) Half wave rectifier Gi) Full Wave Rectifier (1) HALF WAVE RECTIFIER- AC. Voltege 40 be rectified) is connected +o the pAimary winding P,P, of a stepeown transformer: S)Sz2 42 the secondary coil of the trantformer., 3, is Connected to the Potton P of the p-n junction. Sa is Comnected to the porton n through Load resistance R. Ousput i& taken across te load resistance R, INPUT VOLTAGE ouTPUT VOLTAGE ee WORKING - During positive half cycle of A.c., suppose St becomes positive, Sa becomes negative and the pn junction 4s forwara biased. The reslstance of prjunction betames Lows The maximum forward current flows inn the circuit ond we get output across - Load. During negative halfy cycle of Ac. S, becomes negative. and ¥ Js posrtive + Ra en Junction is reversebiased. Tt offers high vealstance and hence there no flow of curent and thus no output across Load. Hence in the output, we have current Correspon— oling 40 one half cycle of the wave and the other bh 4s missing. That is why the process SL Catleol hedf wave rech fication + (2) FULL WAVE RECTIFIER — Fer full wave rectification, we have to we two P-n junction Uedes Dy and Di- the civewit is Shown in the given fig. WORKING — ‘, 1 ——— During the positive. halts cycle Ok AG the diode Dy us forward biased and the ollade Do fs reverse biased. The forward current flows through diode dD, in the olirection a& Shown in fig: During the negative h cle of AL. the cliode D, Js oe ee he ole i. is forward biased. The forward Curment flows Hough ode Da» We Observe thet luring both the half cycles of A.C., Current tough R flows in the same direction. | Gs)”INPUT VOLTAGE oO Due to { Due to Ds Due to Di Due to De 4 OUTPUT VOLTAGE oO Henee the output signal voltage is uniclivechonal having ripple Contents te ole. Components and ave. Components voltage). It can be converted into alc. voltage by filtering through a filter clreutt - FILTER- A single Capacitor of high value of Capacitance comected across the. output of rectifier Can wark ab the filter The Capacitor offers Low impeclanee cto a.¢. Component (% = be = se) ame offers infinite impedance fo alc. Due 4o St, the ac. Componrend is bypassed or filtered out. TE produces a voltage clrop across Load veristomee RL as a filtered ohC. output, which ws almast A.C. voltage. Such filter is wiclly used din power supplier. FILTERED oe 1 DC. a OUTPUT BaISILOSS |SPECIAL PURPOSE PN JUNCTION DIODE - a EN NETL ON DIODE. Seme ctuias which are basically P-n junction clocks art clewelopec| for lifferert applications, (i) ZENER Drove - Tt Js olusignedl Specially to operxode in reverse breakdown voltage region continuously vith out being amagect. In zener diode both p-sicde onal n- Sloe of Pen juncHon ore heavily oloped. Forward current (mA) Reverse (V) voltage Forward roisgs , Reverse current (1A) A cener Hoole has a unique feature that the. Voltage lop across Jt is indepencient of current Flowing through t+ anes ees A Veltoge Regular Zener oliode lu used tn making the constant Voltage power supply: rts working ix baseol on the fact thet In reverse. breakelown yegion , @ very small Change im Voltage across the zener ode produas a Very Loxge Charge in current through the cikcutt bud the voltage across the cener cliode vemains Constant. The Zensr ode id joined in reverse bias to the fluctuating ole: input voltage through a renistance R of Suitable value. (twa)The constont output voltage is taken across @ load wesistance. Ri Connected In Pokallul with zener clicole. CONSTANT FLUCTUATING OUTPUT VOLTAGE D.C. INPUT VOLTAGE WORKING ~ = When the input AC. voltage aerss zener. cliodle increases beyond a carta Limit (Le. Zen breakolown voltage) the Currant though the circuit rises sharply , Causing a sufficient increase In the voltage drop across Me dropping. resistor R. As a result of it, the Voltage across the zener clode vemain Conshont ond hence the output voltage Lowers back 40 normal vole. Wohan the input be Voltage across He zenn diode decreases, the cuwent ough the. Crewt gos clown sharply causing. sufficient olecrease In the voltage. cteross the daopping “resistor R- As a result of ut, the Voltage across the zener. diode yemairs Constant and hence the output voltage is yeu'sed to normal. Hence the output Voltage remains Constant. 18,Gi) PHotoDiepe - Photocicde 8 an optoelectronic clevice in which Cwuunt Carriers (electrons and holes) ane genroted by photns through photo excitation + Tn phofocliode a transparent window is made to allow the LU of Auitable frequency to fall om ot. Tt Ga Spantiey Uhdan reverse biak- a Conductinly of P-n junction photocliocle increases usith the increase in Intensity of Jight falling on ut. LIGHT mA REVERSE VOLTAGE | 9 volt LNSeUND 3SuaAay Woh & When a Li y eners veater than forbidden entngy gap aie 365 i? indiolent on a reverse biased ~p-n junction photodioctey an additional electron hole pairs are created fn the olepletion layer. Tere Charge Cartiers flow across the junction anol genevate a reverse current across the junction. It 4s found thot the reverse saturation current through the. photodiode varies almost Ainearly ustth the Light intensity When the photodiode is reverse biased , Hon & certain current exists in the cfrcuft even whin no Light ds Mdclent on the p-n junction of Photoclioae. This cweunt ts called dark cwounrh (f3]Rises 2) Tilvetoctiooa | Gi) In photddettion for optical simals. Gi) In oclemodulation for optical Signals (iii) In switching tne Light on and off Gv) In veading of Computers, punchecl cards anol tapes. iii) LIGHT EMITTING DIODE CLED) - LED is a photoeketronic cluice which converts decticol energy into Aight energy Tt U aheavily clopeel p-n junction ode oli emits sporctanzous liadion (Aight) under four bias. Hi ; In an LED the upper ev © Aemicond— uctoy is cLepasiteol by ue fet cans Aayer of Bemicordlucter.” Tha. metallise Contacts are provicltel for apply in the forwarel bias voltage fo the p-n junction olioole m battery through a reistance (R) which controls the boadghtneas of Aight emitted. WORKING — : bohen pon junction is -forwatol biased, the movement of majority Charge. Comriers take place acrossthe juncHon. Tae electrons move from n-siole 40 P-Siole through the qunetion and holes move from p- Sidhe to n-side through the junction. As a result of thy the ConcentraHon of ramority Carnes Increases vapidly at the Junction bounolaruy « These minority Carters recombine with onary Conriers near the junction. On recombmation of ele and hole the energy ja given out im the form of heat and Light. In px junction liodis mace of materials Ake gottium arsenide ( GaAs), gallium Phosphicle (GaP) and gallium -arseniole ~ phosphide (GahsP) a greater po- cont ob released cluring the recombination is in the form of visible. Aight. Al vandag es of LED over Bulb :- GL.) LED has Lers power and low eperational voltage, G2) LED has fast action and requires no warm up time, (3) LED 4s cheap ome easy to hance, (4) LED Can be used for vartehy of use eng, In burglar alarm system, in optico) Communication, in cligital voctchas etc. (Q\ Explain giving reason, Why the semiconductor Sie used for fabrication of visible Aght Leps must have a band gap of at Least (nevdy) 1g ev. Sol Semicenductoys with bemd gp (Eg) Close 40 Lee Ore pAsfervedl do make LEDs because the emitted Light fouls in the visible vegion of Em wave spectrum. The other veason to select these materidh are high optical absorption amd ow cost-(lv) SeoLAR CELL - Pro solax cell Converts solar e: indo electrical enurgy. It is also a p-n-Jjunction clade, LIGHT — METALFINGER RODES: METAL CONTACT A Solan cell Conmats of @ Silicon or gallium — Arsenio pn junction clock packed In a can with glors windlow on top: The upper layer is of p-type semi- Coneluctor. Tt ts very tin Ao that the Molelent Aight photons may ensily yeach the p-n junction. On the top face of p-layer, the metal finger electroolts ane pArrpared in orden +o have enough spacing between the fingers for the Light do veach “the p-n JunctHon through’ P- lover. Working {- =— When photons of ght (of entegy hy > Es) Pu at the junction , electron-hole pairs ave generetted| in the depletion layey. The electrons and holes move in opposite direction due to juncHen field. Tre photo generotecl electrons move fowards n-side and hoks move towards p-sice of p-n junction, They will be Callected at the-two sides of the junction, giving vise 40-0 photo voltage befiween the top and beltommetal electrodes. When a external lad is connected auoss metal electrodes a phots Current flows. The V-I characteristics op @ Solan. cell Lying in fourth quechant of the Coordin axes. Tt is so because Solar cell ldes not claw current but supplies to the hood. In graph point A represents open circuit voltage emd point B yepresents short circuit. Uses \- C12 Solar cells ane used for changing storage batteriet in clay Aime, which com supply the power ing night Gi) Solan cells are useol in Satellites to operote the varied electrical inshument Kept insicle the sasetllite . Gi) Solar cetts ate used in calculators, watches etc. GY) Solar cells are used to power traffic signals. @D state the reason, why GaAs is most Commonly used BS in making Adlax Cells. Sh my energy oy the maximum intensity of the Solar yaoliation is nearly 1S ev. In order fo hve Photo excitation the encrgy of YadliaHon (hy) must be greater than enrgy bana gap (E3)- TRenefore the Aemiconduetoy with energy band Fer, check Lsev oy Lower and csith higher aasorption Coefficient ts Likely to give better solar conversion efficiency - The enngy banc gap for Si is 1-1 ew and for Grafs it is about 1-53 eu 23Draw the output waveform at x, using the given Bs inputs A,B for the Jogie Ciscuit Shown below. Ase identify the qede- 4 ty 4, ty te te Truth Table, [1 fF ALS] Y le a a ott © ana i 1 i oo fo \ mm ee B 32 Nan gate us Called Universal gate because all three basic gates (OR, AND and NOT) Can be made using NAND gates. The equivalent gate is AND gate. (48)Very Important Questions L Mavk Questions- QL. What habbeng do the width of obletion er of P-n Galcren when db 4a 5 apt Mey (a) Forward biased 2? () Reverse blosed Cease 2an,0¢) Q.2. es we Jake one slab ch P-type Semin Cordfetoy and inyreemce ee ad to Yencthér slab of n- type Semicoroititor gt P-n junction ? CeGseE 2010 ) @-3. State the relotion behween tre prequencs v of yadiation emittesl by LED and the bene ae eneray E of the semiconductor used 40 -abricece it. Cease 2008 Qu. At re indingic semi- OS eet See me a jeaodoe (Delhi 2008) Qs Taso semiconductor medeials A and & shown in Lhe eee made by clopmg germanium crystal wt Hy nic. and inclu respettively + The two are joined encl conmected| fo @ as Ahowm- (ay) will the juncton be ww forward of reverse biased? a{s [b) Skelkch a V-T grok pr thin amangement, (case 2007) Bie Which one of the +> diodes D, and D2 fn the given Figur 3 Pr av D a) Ferwoncl Bioseol 2 . -2v &3 Reverse Biased. (case 2007 > [eqQT In a transistor , loping. hurd in bose. ia inereasecl slighty « How will ab abtect (4) Collector “Cursent- CDeahi 20 > Ue) Base Current Q.8 Draw the Lee Circuit of a Nand gale ond waite ibs truth Je. Cemse aon >) Q-3. Draw the fe Chrat of AND emd NoT gore oma wit! ats uth fable - (Dal 2008\n) 7 Gio waite the truth doable for the given Cireut Name the eguivelant gete thet tris circu * 7 y (CBs 20105 = : f Qi. The truth sable of a Aogic hos the form given here. Name this draw dds symbdl. (ease 2007,10) =r OOD FOrolp beer} Q@il2. Give the dJogic symbol ak Nok gode, NAND ano AND gee c j (case aaey @is. Warte the full foren of the toams ) Met lb) Lst used “for Affers Bypes of integrated cheuits. (CBSE 2205, 08) OF)2 Marks Questions - Qt, Waite two Characteriste feature to sutra between n-type and p-type Aemiconductre (eese 2007) @2. Name the semicencluctor device thet can be used to regulate avy unrequlatecs] De power supply + With the Wik oh V-. ieristics of this devices explain ts workeng princi ple- (Delhi 20081) Q3. Explain how a depletion ie da formed in ae juncHon diode 2 “eo (Delhi 201) Qu Draw the circuit diagram of an illuminated photodiode in veverse bids. How is photodiode used to meosure dight intensity ? (delhi 2010) Q.s. Write the main use of the (4) Photoctiode @) Zenr diode. CCGQSsE 2010) @& Distinguish belween an intsinsic semiconductor and Pp- semiconductor. Give reason, Why a Ea, eee crystal ib slechejctalbes beste altho Ny >> Ye ? (Delhi 2008) QT Draw a circud diagram show the biasi ° an tap. Stee eldates ee Soe (4) Wavelen; ob pe (b) Intensi ok Li emitted by the LED. ms a ” ome CRGSE 2008) G.3- How ds that the -reverse Cument in a zener diode starts increasing Suddenly at a velatively lows breakdown voltage: of Sv oy So? CeRse 2008) Q9 Distinguish between “analog and digital signals. CCOSE 2005) (ea)Blo. Deschibe briefly with the help of a cireuit a ram, how the flo ib, pent Corstens In a -p eon 4a Prep ect with emitter- bose and bi Junelton fan ase - Collector junction ‘yeverte CeBsE 2012) Ql. a the output caveform at x, tating the given $s A and B& « th doate circuit Shown a Also icant fy the Tee operation br Perpemesl ny this civeuit. (an zon) a) as’ ag te te Ql2. Draw the. tronsjer Characteristic, cunve of a bate biaseol bamnistor tn CE Confi to. Explain cl hows the achve region of the’ Vo venus Vi cur im a transistey is used ab an amplifier. CDdethi 201) QI. Waite the trath -toble -for the pac chrew t+ Sho belo lolentify he i Pope oy tat cea Te laps: opaaton CDdelhi 200) cot ane the terms (4) Input resistance (Ri) (e) nt amplification thr B of a transisbr wre ts ¢ in fs CE, Congigur Coss st) ealQuis. Lordi fy the Logic Hes “x! emd yin the geen Fi Waite down tre buth table for ouput Z for all possible inputs “A’ anol ‘a’. i z Ce@SE 20) Qe. 4) Identify the Logic gas markeol Pand & in He giverd chrenits le) waide clown the owtpub ot x for the inputs Azo, B26 md Az1 , Beal, A DHS x CCBSE 2006; 10) B QT TRe owtprt ef a 2- input AND Gate is fect to 4 Not + Give the name of the combination and its lagic Symba]. Waite clown ats truth table. C Delhi 2003) QA. Draw the tai Loo! th ho xO) ie eer Teena e pte whose truth table is Inputs Output Ss CROSE 2009) S Y oO ° 1 ° 1 © 1 ° ° L 1 ] Th thin dogte @ us Connected do a NoT gode, Wheat esttt be She ontput cohen - (a) A=0 ,Beo GS Aad, Be lb Draw the Logic symbol of the Combination. QS. Waite the truth fable and raw He Loaie symbel of the gate for the clreuit Fiven oe > Case 2008) &3 Marks Questions - QL. Draw a lobelkd cUasram of a full wave vectifier. ciyeuit. State. Ode ae principle - Show the Input output waveforms. (Ce BSE 2006.0) Q2. With the help of @ suitable. cliogram , explain the formation ©. letion im in a P-1n junction. Hors lees tts width char§e when tHe junction us (9) Forwarol Bias (®)” Reverse biow. Ce@se 2005.09) Qa How sb q terr cliode fabricated so as do make ot a special purpose semicenductoey cliod ? Draw the cirewit eee OF a carter Liode as a voltoge y omel plein: dts usrking. (case 2009 5 Qu: The given fi Shows the v-z characteristic of a Semicorductor lode - (ma) 8 Ge uo 20 G) Tolentify the semiconductor cliode useel . (ob) Draw ie Circuit oliogram Fo obtain the given Chonacterisc of this Volewvice Cdethi 2008) Qs. Draw transfer choracterlates @ CE npn tronsisby. Point out the io? in which the transistor operctes as an amplifier. Define, the following dows ued “in tansishr ers plifiod : (oy Input Resistance Cb) Output resistance {€) Curmint amplification fachy ase 2007,.11) Tea)Q.6. Explain briefly with the hub of a@ circuit lingam, ne al panel. ob & rae amplifier fas an oscillafor- (eBse 2011,08) QT. Draw the , labelled civeuit cUiagram of a Common- emitter -bansistor amplifier. Explain’ cleanly how tHe input omd output signals arc’ in obpasite phase ? CEBsE 2008) 5 Marks Questions - QL Ww is a zener diode considirecl a& a special P se semiconductor cliode ? Draw the ‘v-L chenacterisHes of Zener diode and explain hows Yeverse CWeeant Suddenly inereose at the break- down voltage ? Describe. bried iy wtth the help of a circuit di how Q Zaorncr adlocle works do obtain a constant pe Voltage trem the unreg wotect Dec outpat of o rectifier. C CBSE 2012) Q-2. Describe briefly 1 ant the of a diogram , the ‘role of the’ thso important pyocenses iwolveot in the formation of a P-n junction: Draw a civeuit arangement for Studying v-t Chonacteristies of ai P-r junction cliode Vin lA) Ferword bias omcl (b> Reverse bias, CDelhs 2010) Q-3. Explain the formeaten of depletion Layer and Potente bomier in a p-n juncton. ay Tn the given figure the imput waveform ia converter! “ intd the. output waveform by a cdevter XR. Name the clevice and draw Abs civeuit- Inpud output CORSE 2008) bzBU With the help of a Lebelled circuit ollagram explain the ee of aA Pen juncton cliodle as a wave rectifier. Dray the input and output waveforms. Draw V-1 Characteristics 8; a cerns Noole. (eahi 2007, 10) Qs. Exploin briefly He. princdple on which a tromsistoy amplifier werks 94 an oscilledey. Draw the necesary Creuit cliagrarn and explain Jts working: Tolembify the equivalent -for tre diven Civeuit end waite dts mck, able ¢ A—_e— Cceese 2012 ) <> ae——f>o—_ Q.6. Draw, a simple Circewt of a ce transistor amplifier. Explain Sts working. Show that the vol az gan, Ay of the amplifier ta given by Ary o~ Fie Re » Oh Pye td the ac cument gain Rp ds the dead resistance and Ri is the inpub vesiStance of the, residtoy- thor ds the significance. Of the negative sign in the expression {oe the So a (Delhi 2012) Qi Show He owtput cwoveforms CY) the given inputs A oat ob tayo OR gote denen She. to hh ty tet 4, ‘ i ' CDelWi aera) OBQs Drawn a Crewt Lagram of an 7-P-n transistor with Sts emitter bate junction -formand) bieueol and bose Collector junction reverse biased . Describe briefly us taorking . Drawn a crewt diagram and explin the operoction of a tramistoy a4 4 switch. CCBSE 2009) Q.9. Draw the symboedic, representation of a (a) pen-P (b> n-p-n transistor . Why id the bose region of trnsistey thin and Lightly coped 2? With proper. civeuit lagram, shod Bias ok & p-n-p transistor in Comin Conpguradio - and Show thet Te = Iet+ Ie. CeBse 2007 ) @ lo. Draw @ eivcuit cingram eof a Common - emitter amplifier. Deduce the expression fey its voltage an. Explain briefly how the output Voltage, 4b out of phase. by 180° “with the inpat voltage.- CdelWy 2006, 10) Ql. (@Y The Same signed is applies! do both the input texninals ob a geen degic gote: Th the output ia the - ‘ Li) Same as the input signal Wi), Tnwexbed with vesbect Jo the. inpub signal ‘Tolentify the dagic gotes imvolvesl inn each Care. CCBSE 2008)QA stote with reason why a phototiod is usually Operoted| at a reverse bias. Q.2, Stat the factor which controls i) wavel of Aight omd ii) Intensity of Light emitleal by a Le. Q3 Tn @ honsrby, coping lewel in bose is increased shgily How will st afect G) Collector Current on. Ui) bose current ? QU. Con the potentia) Lanier across a pon junction be measured by simply Connecting @ Voltmeter acwnes the juncton ? QS. Whot Js an lolol cliode ? Drow He output waver form across R for the input waveform Given below. +sv ov Pf R -sv Qo In the given circuit, & voltmeter “v’ is Connected! acrmss a damp L» How oO ee would Gi) the brightners of the Lamp and Lis) Voltmeter Teadling 'v' be affected, if the vole of resistance (R? 4s cleereased ? aiev Ars. (1) Imereases Li) IncreasesQ.7. Tolentify Hw gate equivalent 4 OS : to the ‘olotted box’ shown here ! } omd give the symbol and eth ; =a, table. ' ; ole ‘ Q.8. Three photo clicks Bi, Bi ond Ds ane made o Semi conduchys having — bard gaps of 2sev, 2ev and Bev, vespectvely: Which one will be able to oletect Aight of wavelingth 6000 Ag 2 @.3. Explain how the heavy cloping of beth p-and n- sides of A P-n junction cliode ‘results in the electric field of the junction being extremely hi even with a reverse bias voltage of a few volts. Ge In +the given pigure JA Ci) the emitter ancl (i) the Collector forward or reverse biased ? tives caver Q.ll. A semicenducty hax egual electron and hole Coneentration of 2x108/m?. On oloping with 4 Certain Impurity » the hole Concntration increases do uxid Mn, () whet type of semiconductor is obtained! on cbping 2 Gi) Colewate the new elechon and hole Concentrodion Of the semiconductor. Gii> “How aloes the energy gap voy with doping - Pos. 1) podype Gid ne = 10% /m® ny= uxib%pe On) Enagy er ec veares on oping