Integrated Circuits Microprocessors: Department of Physics College of Science University of Mosul
Integrated Circuits Microprocessors: Department of Physics College of Science University of Mosul
ﺍﺴﺘﺨﺩﺍﻡ ﺍﻟﻤﺸﺘﺘﺎﺕ ﺍﻟﺤﺭﺍﺭﻴﺔ ﻓﻲ ﺘﺒﺭﻴﺩ ﺍﻟﺨﻼﻴﺎ ﺍﻟﺸﻤﺴﻴﺔ ﻭﺘﺄﺜﻴﺭﻫﺎ ﻋﻠﻰ ﺃﺩﺍﺀ ﺍﻟﺨﻠﻴﺔ
ﺍﻟﻤﻠﺨﺹ
ﻓﻲ ﻫﺫﺍ ﺍﻟﺒﺤﺙ ﺘﻡ ﺍﺴﺘﺨﺩﺍﻡ ﻤﺸﺘﺕ ﺤﺭﺍﺭﻱ ﻴﺴﺘﺨﺩﻡ ﻋﺎﺩ ﹰﺓ ﻓﻲ ﺘﺒﺭﻴﺩ ﺍﻟﻨﺒﺎﺌﻁ ﺍﻻﻟﻜﺘﺭﻭﻨﻴﺔ ﻭﺍﻟﺩﻭﺍﺌﺭ ﺍﻟﻤﺘﻜﺎﻤﻠﺔ
integrated circuitsﻭﺍﻟﻤﻌﺎﻟﺠﺎﺕ ﺍﻟﺼﻐﺭﻴﺔ microprocessorsﻟﺘﺒﺭﻴﺩ ﺨﻠﻴﺔ ﺸﻤﺴﻴﺔ ﻭﺩﺭﺍﺴﺔ ﺘﺄﺜﻴﺭ ﻁﺭﻴﻘﺔ
ﺍﻟﺘﺒﺭﻴﺩ ﻫﺫﻩ ﻋﻠﻰ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﻭﺃﺩﺍﺀ ﺍﻟﺨﻠﻴﺔ ،ﺍﺴﺘﺨﺩﻤﻨﺎ ﻤﺼﺒﺎﺤﹰﺎ ﻫﺎﻟﻭﺠﻴﻨﻴﹰﺎ ﺒﻭﺼﻔﻪ ﻤﺼﺩﺭﹰﺍ ﻟﻠﻀﻭﺀ
ﻭﺍﻟﺤﺭﺍﺭﺓ .ﺒﻴﻨﺕ ﺍﻟﻨﺘﺎﺌﺞ ﺃﻨﻪ ﻜﻠﻤﺎ ﺯﺍﺩﺕ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻗﻠﺕ ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ ﻭﺒﺸﻜل
ﻤﺘﺴﺎﺭﻉ ﻭﻟﻜﻥ ﻋﻨﺩ ﺍﺴﺘﺨﺩﺍﻡ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ ﻓﺈﻥ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺍﺭﺘﻔﻌﺕ ﺒﺸﻜل ﺃﺒﻁﺄ ﺨﻼل ﻨﻔﺱ ﺍﻟﻔﺘﺭﺓ
ﺍﻟﺯﻤﻨﻴﺔ ﻭﻟﺫﻟﻙ ﻓﺈﻥ ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ ﺍﻨﺨﻔﻀﺕ ﻭﺒﺸﻜل ﺃﺒﻁﺄ ﻤﻘﺎﺭﻨﺔ ﻤﻊ ﺍﻟﺤﺎﻟﺔ ﺍﻷﻭﻟﻰ ﻭﻫﺫﺍ ﻴﻌﻨﻲ ﻋﻤل
ﺍﻟﺨﻠﻴﺔ ﺒﻜﻔﺎﺀﺓ ﺃﻋﻠﻰ ﺘﺤﺕ ﻨﻔﺱ ﺍﻟﻅﺭﻭﻑ.
decreases slower than the first case. This means that the solar cell will work at a higher
efficiency under the same condition.
ﻓﻲ ﻫﺫﺍ ﺍﻟﺒﺤﺙ ﺘﻡ ﺍﻋﺘﻤﺎﺩ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﺘﻤﺜل ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﺤﻴﺙ ﺘﻡ ﻭﻀﻊ
ﺍﻟﻤﺘﺤﺴﺱ ﺍﻟﺤﺭﺍﺭﻱ ﻋﻠﻰ ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﻠﺨﻠﻴﺔ ﻤﺒﺎﺸﺭ ﹰﺓ ﻭﻟﻡ ﻨﻘﻡ ﺒﻭﻀﻊ ﺍﻟﻤﺘﺤﺴﺱ ﻋﻠﻰ ﺍﻟﺴﻁﺢ ﺍﻟﻌﻠﻭﻱ ﻭﺫﻟﻙ
ﻟﻭﺠﻭﺩ ﺍﻟﻤﺼﺩﺭ ﺍﻟﺤﺭﺍﺭﻱ ﻤﻘﺎﺒل ﻟﻠﺴﻁﺢ ﺤﻴﺙ ﺴﺘﻜﻭﻥ ﻗﺭﺍﺀﺓ ﻫﺫﺍ ﺍﻟﻤﺘﺤﺴﺱ ﻨﺘﻴﺠﺔ ﻟﺴﺨﻭﻨﺘﻪ ﻤﻥ ﺍﻟﻤﺼﺩﺭ
ﺍﻟﻀﻭﺌﻲ ﺍﻟﺤﺭﺍﺭﻱ ﺍﻟﺘﻲ ﻟﻥ ﺘﻤﺜل ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺴﻁﺢ ﺍﻟﻌﻠﻭﻱ ﻟﻠﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ.
ﺃﻤﺎ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ ﻓﻬﻭ ﻋﺒﺎﺭﺓ ﻋﻥ ﻗﻁﻌﺔ ﻤﻌﺩﻨﻴﺔ ﻤﺼﻤﻤﺔ ﺒﻁﺭﻴﻘﺔ ﻤﻌﻴﻨﺔ ﻴﻭﻀﻊ ﻋﻠﻰ ﺴﻁﻭﺡ ﺍﻟﻌﻨﺎﺼﺭ
ﺍﻻﻟﻜﺘﺭﻭﻨﻴﺔ ﺤﻴﺙ ﻴﻘـﻭﻡ ﺒﻨﻘل ﺍﻟﺤـﺭﺍﺭﺓ ﻤﻥ ﺍﻟﻌﻨﺼﺭ ﺍﻻﻟﻜﺘﺭﻭﻨﻲ ﺇﻟﻰ ﺍﻟﻤﺸﺘﺕ ﺜـﻡ ﺇﻟﻰ ﺍﻟﻬﻭﺍﺀ ﺍﻟﺨﺎﺭﺠﻲ
ﺍﻟﻤﺤﻴﻁ ﺒﺎﻟﻤﺸﺘﺕ .ﻜﻠﻤﺎ ﻜﺎﻥ ﻤﻌﺩل ﻨﻘل ﺍﻟﺤﺭﺍﺭﺓ ﻤﻥ ﺴﻁﺢ ﺍﻟﻌﻨﺼﺭ ﺍﻹﻟﻜﺘﺭﻭﻨﻲ ﺇﻟﻰ ﺍﻟﻤﺸﺘﺕ ﺃﻜﺒﺭ ﺯﺍﺩﺕ ﻜﻔﺎﺀﺓ
ﺍﻟﺘﺒﺭﻴﺩ .ﻭﻟﻜﻲ ﻴﺘﻡ ﺫﻟﻙ ﻴﺠﺏ ﺃﻥ ﻴﻜﻭﻥ ﻜل ﻤﻥ ﺴﻁﺢ ﺍﻟﻌﻨﺼﺭ ﺍﻹﻟﻜﺘﺭﻭﻨﻲ ﻭ ﻗﺎﻋﺩﺓ ﺍﻟﻤﺸﺘﺕ ﻤﺘﻼﻤﺴﺎﻥ ﺘﻤﺎﻤﺎ ﻟﻜﻥ
ﻫﺫﺍ ﻻ ﻴﺤﺩﺙ ﻷﻥ ﻫﺫﻩ ﺍﻷﺴﻁﺢ ﻏﻴﺭ ﻤﺼﻘﻭﻟﺔ ﺘﻤﺎﻤﺎ ﺇﺫ ﻴﻭﺠﺩ ﻓﻴﻬﺎ ﺒﻌﺽ ﺍﻟﻔﺭﺍﻏﺎﺕ ﻭ ﺍﻟﺸﻘﻭﻕ ﺍﻟﺩﻗﻴﻘﺔ ﺍﻟﺘﻲ ﻻ
ﻼ ﺠﻴﺩﹰﺍ ﻟﻠﺤﺭﺍﺭﺓ ﻭ ﺒﺎﻟﺘﺎﻟﻲ ﺘﻘﻠل ﻤﻥ ﻜﻔﺎﺀﺓ ﻨﻘل
ﺘﺭﻯ ﺒﺎﻟﻌﻴﻥ ﺍﻟﻤﺠﺭﺩﺓ ﻭ ﻫﻲ ﺘﺤﺘﻭﻱ ﻋﻠﻰ ﺍﻟﻬﻭﺍﺀ ﺍﻟﺫﻱ ﻻ ﻴﻌﺩ ﻨﺎﻗ ﹰ
ﺍﻟﺤﺭﺍﺭﺓ ﺒﻴﻥ ﺍﻟﻌﻨﺼﺭ ﺍﻹﻟﻜﺘﺭﻭﻨﻲ ﻭﺍﻟﻤﺸﺘﺕ ﻟﺫﻟﻙ ﻴﺘﻡ ﺍﺴﺘﻌﻤﺎل ﻤﺎ ﻴﺴﻤﻰ ﺒﺎﻟﻤﻌﺠﻭﻥ ﺍﻟﺤﺭﺍﺭﻱ ﻟﻴﻘﻭﻡ ﺒﻤلﺀ ﻫﺫﻩ
ﺍﻟﻔﺭﺍﻏﺎﺕ ﻭﺍﻟﺸﻘﻭﻕ ﺒﺤﻴﺙ ﻴﺅﻤﻥ ﺃﻓﻀل ﺘﻼﻤﺱ ﺒﻴﻥ ﺴﻁﺢ ﺍﻟﻌﻨﺼﺭ ﺍﻹﻟﻜﺘﺭﻭﻨﻲ ﻭﻗﺎﻋﺩﺓ ﺍﻟﻤﺸﺘﺕ ﻭ ﻴﺅﻤﻥ ﺒﺎﻟﺘﺎﻟﻲ
ﻨﻘل ﺃﻤﺜل ﻟﻠﺤﺭﺍﺭﺓ ﻤﻥ ﺍﻟﻌﻨﺼﺭ ﺇﻟﻰ ﺍﻟﻤﺸﺘﺕ ﻭ ﻴﺴﺎﻋﺩ ﻋﻠﻰ ﺨﻔﺽ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﻌﻨﺼﺭ ﺍﻹﻟﻜﺘﺭﻭﻨﻲ.
ﻭﻜﻠﻤﺎ ﻜﺎﻥ ﺍﻟﻤﺸﺘﺕ ﺃﻜﺒﺭ ﺃﻤﻥ ﺫﻟﻙ ﺍﻤﺘﺼﺎﺼﹰﺎ ﺃﻜﺜﺭ ﻟﻠﺤﺭﺍﺭﺓ ﻭﺘﻭﺯﻴﻌﻬﺎ ﻋﻠﻰ ﺍﻟﻤﺸﺘﺕ ﺃﻜﺜﺭ .ﺘﻌﺘﻤﺩ ﻜﻔﺎﺀﺓ ﻨﻘل
ﺍﻟﺤﺭﺍﺭﺓ ﻤﻥ ﺍﻟﻌﻨﺼﺭ ﺍﻹﻟﻜﺘﺭﻭﻨﻲ )ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ( ﺇﻟﻰ ﺍﻟﻤﺸﺘﺕ ﺇﻟﻰ ﺍﻟﻬﻭﺍﺀ ﺍﻟﺨﺎﺭﺠﻲ ﻋﻠﻰ ﺍﻟﻤﻌﺩﻥ ﺍﻟﻤﺼﻨﻭﻉ
ﻤﻨﻪ ﺍﻟﻤﺸﺘﺕ .ﻜﻤﺎ ﺃﻥ ﻨﻭﻉ ﺍﻟﻤﻌﺩﻥ ﺍﻟﻤﺼﻨﻭﻉ ﻤﻨﻪ ﺍﻟﻤﺸﺘﺕ ﻭﺸﺩﺓ ﺼﻘل ﻗﺎﻋﺩﺘﻪ ﺍﻟﻤﻼﻤﺴﺔ ﻟﻠﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﺘﻠﻌﺒﺎﻥ
ﺩﻭﺭﺍ ًﻤﻬﻤﹰﺎ ﻓﻲ ﻜﻤﻴﺔ ﺍﻟﺤﺭﺍﺭﺓ ﺍﻟﻤﻨﺘﻘﻠﺔ ﻤﻥ ﺍﻟﺨﻠﻴﺔ ﺇﻟﻰ ﺍﻟﻤﺸﺘﺕ ﻭﻤﻨﻪ ﺇﻟﻰ ﺍﻟﻤﺤﻴﻁ ﺍﻟﺨﺎﺭﺠﻲ .ﻓﻤﻥ ﺍﻟﻤﻌﻠﻭﻡ ﺃﻥ
ﺍﻟﻤﻌﺎﺩﻥ ﺘﺨﺘﻠﻑ ﻓﻴﻤﺎ ﺒﻴﻨﻬﺎ ﻤﻥ ﺤﻴﺙ ﻗﺩﺭﺘﻬﺎ ﻋﻠﻰ ﻨﻘل ﺍﻟﺤﺭﺍﺭﺓ ،ﻭﻤﻥ ﺍﻟﻤﻌﺎﺩﻥ ﺍﻟﻤﺴﺘﺨﺩﻤﺔ ﺒﻜﺜﺭﺓ ﻓﻲ ﺼﻨﺎﻋﺔ
ﺍﻟﻤﺸﺘﺘﺎﺕ ﻫﻲ ﺍﻷﻟﻤﻨﻴﻭﻡ ﻭﺍﻟﻨﺤﺎﺱ ﻭﺍﻟﻔﻀﺔ .ﻓﻲ ﺒﺤﺜﻨﺎ ﻫﺫﺍ ﺍﺴﺘﺨﺩﻤﻨﺎ ﺍﻷﻟﻤﻨﻴﻭﻡ ﻭﻫﻭ ﺍﻷﻜﺜﺭ ﺍﻨﺘﺸﺎﺭﹰﺍ ﻭﺍﺴﺘﻌﻤﺎ ﹰ
ﻻ
ﻭﺫﻟﻙ ﻻﻨﺨﻔﺎﺽ ﺴﻌﺭﻩ ﻭﺘﻭﻓﺭﻩ ﺒﻜﺜﺭﺓ ﻭﺨﻔﺔ ﻭﺯﻨﻪ ﻭﺴﻬﻭﻟﺔ ﺘﺸﻜﻴﻠﻪ ﺤﻴﺙ ﺘﺒﻠﻎ ﺍﻟﻨﺎﻗﻠﻴﺔ ﺍﻟﺤﺭﺍﺭﻴﺔ ﻟﻸﻟﻤﻨﻴﻭﻡ ) 237
.( Lienhard IV and Lienhard V, 2008 ) (W/m.K
ﺫﻜﺭﻨﺎ ﺴﺎﺒﻘﹰﺎ ﺃﻨﻪ ﺘﻡ ﺍﻻﺴﺘﻌﺎﻨﺔ ﺒﺎﻟﻤﻌﺠﻭﻥ ﺍﻟﺤﺭﺍﺭﻱ ﻟﻴﻘﻭﻡ ﺒﻤلﺀ ﺍﻟﻔﺭﺍﻏﺎﺕ ﻭ ﺍﻟﺸﻘﻭﻕ ﺒﻴﻥ ﻗﺎﻋﺩﺓ ﺍﻟﻤﺸﺘﺕ ﻭ
ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﻠﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻭ ﻴﺅﻤﻥ ﺒﺎﻟﺘﺎﻟﻲ ﻨﻘل ﺃﻤﺜل ﻟﻠﺤﺭﺍﺭﺓ ﻤﻥ ﺍﻟﺨﻠﻴﺔ ﺇﻟﻰ ﺍﻟﻤﺸﺘﺕ ﻫﻭ ﻤﻌﺠﻭﻥ ﻤﻜﻭﻥ ﻤﻥ
ﻫﺩﻯ ﻤﺤﻤﺩ ﻤﻨﻴﺭ ﻋﺒﺩ ﺍﻟﻘﺎﺩﺭ 94
ﻤﻭﺍﺩ ﻤﻌﺩل ﺍﻟﺘﺒﺎﺩل ﺍﻟﺤﺭﺍﺭﻱ ﻓﻴﻬﺎ ﻋﺎﻟﻲ ﺘﻭﻀﻊ ﺒﻴﻥ ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﻠﺨﻠﻴﺔ ﺍﻟﺫﻱ ﻴﺼﺩﺭ ﺍﻟﺤﺭﺍﺭﺓ ﻭﺒﻴﻥ ﺍﻟﻤﺸﺘﺕ
ﻤﻬﻤﺘﻬﺎ ﻨﻘل ﺍﻟﺤﺭﺍﺭﺓ ﻤﻥ ﺍﻟﺴﻁﺢ ﺍﻟﺴﺎﺨﻥ ﺇﻟﻰ ﺍﻟﺴﻁﺢ ﺍﻟﺒﺎﺭﺩ ﺜﻡ ﺇﻋﺎﺩﺓ ﺍﻟﺒﺭﻭﺩﺓ ﺇﻟﻰ ﺴﻁﺢ ﺍﻟﺨﻠﻴﺔ ﺤﺘﻰ ﻴﺘﻡ ﺘﺒﺭﻴﺩﻩ.
ﻭﻓﻲ ﻫﺫﺍ ﺍﻟﺒﺤﺙ ﺘﻡ ﺍﺴﺘﺨﺩﺍﻡ ﻤﻌﺠﻭﻥ ﺴﻴﺭﺍﻤﻴﻜﻲ ﻭﻫﺫﺍ ﺍﻟﻤﻌﺠﻭﻥ ﻫﻭ ﻤﻭﺼل ﺠﻴﺩ ﻟﻠﺤﺭﺍﺭﺓ ﻭﻟﻭﻥ ﻫﺫﺍ
ﺍﻟﻤﻌﺠﻭﻥ ﺃﺒﻴﺽ ﻤﺜل ﻟﻭﻥ ﺒﻭﺩﺭﺓ ﺍﻟﺴﻴﺭﺍﻤﻴﻙ ﻭﻴﺘﻤﻴﺯ ﺒﻘﺩﺭﺘﻪ ﻋﻠﻰ ﺍﻻﻟﺘﺼﺎﻕ ﻭ ﻴﺤﺎﻓﻅ ﻋﻠﻰ ﺘﻤﺎﺴﻜﻪ ﻋﻨﺩ ﺩﺭﺠﺎﺕ
ﺍﻟﺤﺭﺍﺭﺓ ﺍﻟﻤﺨﺘﻠﻔﺔ ﻭ ﻻ ﻴﺠﻑ ﺴﺭﻴﻌﺎ ﻭﻻ ﻴﺘﻔﺘﺕ ﻭ ﻏﻴﺭ ﻤﻭﺼل ﻟﻠﺘﻴﺎﺭ ﺍﻟﻜﻬﺭﺒﺎﺌﻲ.
ﻓﻲ ﻫﺫﺍ ﺍﻟﺒﺤﺙ ﺘﻡ ﺍﺴﺘﺨﺩﺍﻡ ﻤﺘﺤﺴﺱ ﺤﺭﺍﺭﻱ ﻤﻥ ﻨﻭﻉ kﻭﺫﻟﻙ ﻟﻘﻴﺎﺱ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﻠﺨﻠﻴﺔ
ﻭﻫﺫﺍ ﺍﻟﻤﺘﺤﺴﺱ ﻴﺴﺘﺨﺩﻡ ﻟﻘﻴﺎﺱ ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ ﺒﺎﻻﻋﺘﻤﺎﺩ ﻋﻠﻰ ﺍﻟﻜﻬﺭﺒﺎﺀ ﺍﻟﺤﺭﺍﺭﻴﺔ ﺃﻭ ﻤﺎ ﻴﺴﻤﻰ ﺘﺄﺜﻴﺭ Seebeck
ﻨﺴﺒﺔ ﺇﻟﻰ ﺍﻟﻌﺎﻟﻡ ﺍﻷﻟﻤﺎﻨﻲ ﺍﻟﺫﻱ ﺃﻜﺘﺸﻑ ﻫﺫﻩ ﺍﻟﻁﺭﻴﻘﺔ ،ﺤﻴﺙ ﻴﺘﻜﻭﻥ ﻫﺫﺍ ﺍﻟﻤﺘﺤﺴﺱ ﻤﻥ ﺴﻠﻜﻴﻥ ﻤﻌﺩﻨﻴﻴﻥ ﻤﺨﺘﻠﻔﻴﻥ
ﻴﻭﻟﺩﺍﻥ ﻓﺭﻗﹰﺎ ﻓﻲ ﺍﻟﺠﻬﺩ ﺍﻟﻜﻬﺭﺒﺎﺌﻲ ﻨﺘﻴﺠﺔ ﻻﺨﺘﻼﻑ ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ ﺒﻴﻥ ﺃﻁﺭﺍﻓﻬﻤﺎ ،ﻴﺘﻡ ﺘﺤﻭﻴل ﻫﺫﻩ ﺍﻟﻘﻴﻤﺔ ﻤﻥ ﺍﻟـ
) (mVﺍﻟﻰ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ) .(Theraja, 2009ﻭﺍﻟﻤﺨﻁﻁ ﻓﻲ ﺍﻟﺸﻜل ) (1ﻴﻭﻀﺢ ﻜﻴﻔﻴﺔ ﺘﺜﺒﻴﺕ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ
ﻓﻭﻕ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ ﺒﻌﺩ ﻭﻀﻊ ﺍﻟﻤﻌﺠﻭﻥ ﺍﻟﺤﺭﺍﺭﻱ ﺒﻴﻨﻬﻤﺎ ﻭﻜﺫﻟﻙ ﻤﻭﻗﻊ ﺍﻟﻤﺼﺩﺭ ﺍﻟﻀﻭﺌﻲ ﺍﻟﻬﺎﻟﻭﺠﻴﻨﻲ ﻤﻥ
ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ .
ﻭﺒﺸﻜل ﻤﺒﺎﺸﺭ ﻟﺘﻤﺜل ﻤﺼﺩﺭ ﻀﻭﺌﻲ ﻭﺤﺭﺍﺭﻱ ﻓﻲ ﻨﻔﺱ ﺍﻟﻭﻗﺕ ﻭﺫﻟﻙ ﻟﺭﻓﻊ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻗﻴﺩ
ﺍﻟﺩﺭﺍﺴﺔ ﻭﺒﺸﻜل ﺘﺩﺭﻴﺠﻲ ،ﻭﻟﻐﺭﺽ ﻗﻴﺎﺱ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺘﻡ ﺭﺒﻁ ﻤﺘﺤﺴﺱ ﺤﺭﺍﺭﻱ ﻋﻠﻰ ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ
ﻟﻠﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻭﻫﻭ ﻋﺒﺎﺭﺓ ﻋﻥ ﻤﺯﺩﻭﺝ ﺤﺭﺍﺭﻱ ) (type k-thermocoupleﻜﻤﺎ ﻭﺘﻤﺕ ﻤﺘﺎﺒﻌﺔ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ
ﺍﻟﻤﺤﻴﻁ ﺍﻟﺨﺎﺭﺠﻲ ﻋﻥ ﻁﺭﻴﻕ ﻭﻀﻊ ﺠﻬﺎﺯ ﻟﻘﻴﺎﺱ ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ ﻋﻥ ﻁﺭﻴﻕ ﺘﺜﺒﻴﺕ ﻤﺤﺭﺍﺭ ﻋﻠﻰ ﺒﻌﺩ )(90 cm
ﻤﻥ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻭﺭﺒﻁ ﻁﺭﻓﻲ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻋﻠﻰ ﻤﻘﻴﺎﺱ ﻓﻭﻟﺘﻴﺔ ﻭﺫﻟﻙ ﻟﺘﺴﺠﻴل ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ.
ﻭﻜﺎﻨﺕ ﺨﻁﻭﺍﺕ ﺍﻟﻘﻴﺎﺱ ﻜﻤﺎ ﻴﻠﻲ.
ﺃﻭﻻ :ﺘﺴﺠﻴل ﻗﻴﻡ ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ Vocﻭﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﻠﺨﻠﻴﺔ ﻜل ﺩﻗﻴﻘﺘﻴﻥ ﻭﻟﻤﺩﺓ 20ﺩﻗﻴﻘﺔ
ﻤﻥ ﻟﺤﻅﺔ ﺘﺸﻐﻴل ﺍﻟﻤﺼﺩﺭ ﺍﻟﻀﻭﺌﻲ ،ﻭﻜﻤﺎ ﻤﻭﻀﺢ ﻓﻲ ﺍﻟﺠﺩﻭل ).(1
ﺜﺎﻨﻴﺎ" :ﺘﻡ ﺘﺜﺒﻴﺕ ﻤﺸﺘﺕ ﺤﺭﺍﺭﻱ ﻤﺼﻨﻊ ﺨﺼﻴﺼﺎ" ﻟﺘﺒﺭﻴﺩ ﺍﻟﻤﻌﺎﻟﺠﺎﺕ ﺍﻟﻤﺴﺘﺨﺩﻤﺔ ﻓﻲ ﺍﻟﺤﺎﺴﻭﺏ ﺒﻌﺩ ﺘﻐﻴﻴﺭ ﺸﻜﻠﻪ
ﻟﻴﺘﻨﺎﺴﺏ ﻤﻊ ﺸﻜل ﺍﻟﺨﻠﻴﺔ ﺍﻟﻤﺴﺘﺨﺩﻤﺔ ﻓﻲ ﻫﺫﺍ ﺍﻟﺒﺤﺙ ﻭﺍﻟﻤﺤﺎﻓﻅﺔ ﻋﻠﻰ ﺒﻘﺎﺀ ﺍﻟﻤﺘﺤﺴﺱ ﻓﻲ ﻨﻔﺱ ﺍﻟﻤﻜﺎﻥ ﺍﻟﺴﺎﺒﻕ ﻤﻥ
ﺍﻟﻤﺭﺤﻠﺔ ﺍﻷﻭﻟﻰ ﻟﻠﻘﻴﺎﺴﺎﺕ )ﺒﺩﻭﻥ ﺍﻟﻤﺸﺘﺕ( .ﺘﻡ ﻭﻀﻊ ﻤﻌﺠﻭﻥ ﺤﺭﺍﺭﻱ ﻟﻠﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﻠﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻭﺫﻟﻙ
ﻟﻀﻤﺎﻥ ﺃﻓﻀل ﺍﻨﺘﻘﺎل ﻟﻠﺤﺭﺍﺭﺓ ﻭﻟﻠﺘﺨﻠﺹ ﻤﻥ ﺍﻟﻔﺭﺍﻏﺎﺕ ﺒﻴﻥ ﺴﻁﺢ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺴﻔﻠﻲ ﻭﺍﻟﺴﻁﺢ ﺍﻟﻌﻠﻭﻱ ﻟﻠﻤﺸﺘﺕ .ﻭﺘﻡ
ﺘﺴﺠﻴل ﻗﻴﻡ ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ Vocﻭﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺴﻁﺢ ﺍﻟﺴﻔﻠﻲ ﻟﻠﺨﻠﻴﺔ ﻜﻤﺎ ﻓﻲ ﺃﻭﻻ ﺃﻋﻼﻩ ﻭﻜﻤﺎ ﻤﻭﻀﺢ
ﻓﻲ ﺍﻟﺠﺩﻭل ) .(2ﻭﺍﻟﺸﻜل ) (2ﻴﻭﻀﺢ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﺍﻟﻤﺜﺒﺘﺔ ﻋﻠﻰ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ.
اﻟﺨﻠﻴﺔ اﻟﺸﻤﺴﻴﺔ
اﻟﻤﺸﺘﺖ اﻟﺤﺮاري
ﺍﻟﺠﺩﻭل :1ﺘﻐﻴﺭ ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ ﻭﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ ﻤﻊ ﺍﻟﺯﻤﻥ ﻓﻲ ﺤﺎﻟﺔ ﻋﺩﻡ ﻭﺠﻭﺩ ﺍﻟﻤﺸﺘﺕ
ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﺒﺩﻭﻥ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ
ﺍﻟﺯﻤﻥ )(min ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ)(V ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ ) ( ° C
2 6.55 6
4 6.31 13
6 6.13 21
8 6.01 26
10 5.93 29
12 5.87 33
14 5.83 34.5
16 5.80 36.5
18 5.78 37
20 5.76 38
ﺍﻟﺠﺩﻭل :2ﺘﻐﻴﺭ ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ ﻭﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ ﻤﻊ ﺍﻟﺯﻤﻥ ﻓﻲ ﺤﺎﻟﺔ ﻭﺠﻭﺩ ﺍﻟﻤﺸﺘﺕ
ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻤﻊ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ
ﺍﻟﺯﻤﻥ )(min ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ)(V ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ )( ° C
2 6.67 6
4 6.57 11
6 6.50 13
8 6.45 16
10 6.40 17
12 6.35 18
14 6.31 18.2
16 6.28 18.3
18 6.27 21
20 6.20 21.1
ﺍﻟﺸﻜل :3ﺘﻐﻴﺭ ﺍﻟﻔﻭﻟﺘﻴﺔ ﻤﻊ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻋﻨﺩ ﻭﺠﻭﺩ ﻭﻋﺩﻡ ﻭﺠﻭﺩ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ
97 ﺍﺴﺘﺨﺩﺍﻡ ﺍﻟﻤﺸﺘﺘﺎﺕ ﺍﻟﺤﺭﺍﺭﻴﺔ ﻓﻲ ﺘﺒﺭﻴﺩ ﺍﻟﺨﻼﻴﺎ.........
ﺍﻟﺸﻜل :4ﺘﻐﻴﺭ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻤﻊ ﺍﻟﺯﻤﻥ ﻋﻨﺩ ﻭﺠﻭﺩ ﻭﻋﺩﻡ ﻭﺠﻭﺩ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ
ﺍﻟﻨﺘﺎﺌﺞ ﻭ ﺍﻟﻤﻨﺎﻗﺸﺔ
ﻤﻥ ﺍﻟﺸﻜل ) (3ﻭﺍﻟﺠﺩﻭل ) (1ﻨﻼﺤﻅ ﺍﻨﺨﻔﺎﺽ ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ ﻤﻊ ﺯﻴﺎﺩﺓ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ
ﺍﻟﺸﻤﺴﻴﺔ ﻭﻫﺫﺍ ﺍﻻﻨﺨﻔﺎﺽ ﻓﻲ ﺍﻟﻔﻭﻟﺘﻴﺔ ﻴﻜﻭﻥ ﺒﺸﻜل ﺴﺭﻴﻊ ﻨﺘﻴﺠﺔ ﻻﺯﺩﻴﺎﺩ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﺒﺼﻭﺭﺓ
ﺴﺭﻴﻌﺔ ﻋﻨﺩ ﻋﺩﻡ ﻭﺠﻭﺩ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ .ﺃﻤﺎ ﻤﻥ ﺍﻟﻘﻴﻡ ﻓﻲ ﺍﻟﺠﺩﻭل ) (2ﻭﺍﻟﺸﻜل ) (3ﻓﻨﻼﺤﻅ ﺃﻥ ﺍﻨﺨﻔﺎﺽ
ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ ﻴﻜﻭﻥ ﺃﺒﻁﺄ ﻭﺫﻟﻙ ﻴﻌﻭﺩ ﺇﻟﻰ ﺍﻻﺭﺘﻔﺎﻉ ﺍﻟﺒﻁﻲﺀ ﻓﻲ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ ﺍﻟﺨﻠﻴﺔ ﻨﺘﻴﺠﺔ ﻟﺯﻴﺎﺩﺓ
ﻓﻘﺩﺍﻨﻬﺎ ﻟﻠﺤﺭﺍﺭﺓ ﻋﻥ ﻁﺭﻴﻕ ﺍﻟﻤﺸﺘﺕ.
ﺃﻤﺎ ﺍﻟﺸﻜل ) (4ﻓﻨﻼﺤﻅ ﺃﻥ ﻤﻘﺩﺍﺭ ﺍﻟﺯﻴﺎﺩﺓ ﻓﻲ ﺩﺭﺠﺔ ﺍﻟﺤﺭﺍﺭﺓ ﻭﺨﻼل ﺍﻟﻔﺘﺭﺓ ﺍﻟﺯﻤﻨﻴﺔ ﻨﻔﺴﻬﺎ ﻴﻜﻭﻥ ﺃﻗل ﻓﻲ
ﺤﺎﻟﺔ ﺍﺴﺘﺨﺩﺍﻡ ﺍﻟﻤﺸﺘﺕ ﻤﻨﻪ ﻋﻨﺩ ﻋﺩﻡ ﺍﺴﺘﺨﺩﺍﻤﻪ.
ﺇﻥ ﻨﺴﺒﺔ ﺍﻟﺘﺤﺴﻥ ﻓﻲ ﺃﺩﺍﺀ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻴﻤﻜﻥ ﻤﻼﺤﻅﺘﻪ ﺒﺎﻟﺭﺠﻭﻉ ﺇﻟﻰ ﺍﻟﺸﻜل ) (3ﻭﺍﻟﺫﻱ ﻴﺒﻴﻥ ﻨﺴﺒﺔ
ﺍﻻﺭﺘﻔﺎﻉ ﻓﻲ ﺍﻟﻔﻭﻟﺘﻴﺔ ﻭﺍﻻﺤﺘﻔﺎﻅ ﺒﻘﻴﻤﺔ ﺍﻟﻔﻭﻟﺘﻴﺔ ﺨﻼل ﻨﻔﺱ ﺍﻟﻔﺘﺭﺓ ﺍﻟﺯﻤﻨﻴﺔ ﻭﺫﻟﻙ ﻋﻨﺩ ﺍﺴﺘﺨﺩﺍﻡ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ.
ﻭﻫﺫﺍ ﺍﻟﺘﺤﺴﻥ ﻓﻲ ﺍﻷﺩﺍﺀ ﻭﺍﻀﺢ ﻋﻨﺩ ﻤﻘﺎﺭﻨﺔ ﻗﻴﻤﺔ ) (∆Vocﻭ) (∆Tﻓﻲ ﻜﻼ ﺍﻟﺤﺎﻟﺘﻴﻥ ﺤﻴﺙ ﺘﻜﻭﻥ ﻗﻴﻤﺔ
) (∆Voc= -0.087 Vﻭ) (∆T = 3.55 ° Cﻋﻨﺩ ﻋﺩﻡ ﻭﺠﻭﺩ ﺍﻟﻤﺸﺘﺕ ﻓﻲ ﺤﻴﻥ ﺘﻜﻭﻥ ﻓﻴﻬﺎ ) Voc = -0.052 V
∆( ﻭ) (∆ T = 1.67 ° Cﻋﻨﺩ ﻭﺠﻭﺩ ﺍﻟﻤﺸﺘﺕ.
ﻫﺩﻯ ﻤﺤﻤﺩ ﻤﻨﻴﺭ ﻋﺒﺩ ﺍﻟﻘﺎﺩﺭ 98
ﺍﻻﺴﺘﻨﺘﺎﺠﺎﺕ
ﻋﻨﺩ ﺍﺴﺘﺨﺩﺍﻡ ﺍﻟﻤﺸﺘﺕ ﺍﻟﺤﺭﺍﺭﻱ ﻓﻲ ﺘﺒﺭﻴﺩ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﺘﻌﻤل ﺍﻟﺨﻠﻴﺔ ﺒﻜﻔﺎﺀﺓ ﺃﻋﻠﻰ ﻤﻤﺎ ﻟﻭ ﻜﺎﻨﺕ ﺒﺩﻭﻥ.1
.ﺍﻟﻤﺸﺘﺕ ﻭﺘﺤﺕ ﻨﻔﺱ ﺍﻟﻅﺭﻭﻑ
( ﻟﻭ ﺘﻡ ﺘﺼﻤﻴﻡ ﺍﻟﻤﺸﺘﺕ ﺍﻋﺘﻤﺎﺩﺍ" ﻋﻠﻰ ﻤﻭﺍﺼﻔﺎﺕ ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﺃﻭ ﺘﻡ ﺇﻀﺎﻓﺔ ﻤﺼﺩﺭ ﻫﻭﺍﺀ )ﺍﻟﺘﺒﺭﻴﺩ ﺍﻟﻔﻌﺎل.2
ﻓﺴﻭﻑ ﻨﺤﺼل ﻋﻠﻰ ﻜﻔﺎﺀﺓ ﺃﻋﻠﻰ ﻭﻗﺩ ﻨﺼل ﺇﻟﻰ ﺤﺎﻟﺔ ﺍﻟﺘﻭﺍﺯﻥ ﺍﻟﺤﺭﺍﺭﻱ ﻤﻤﺎ ﻴﻌﻨﻲ ﻋﻤل ﺜﺒﺎﺕ ﺩﺭﺠﺔ ﺤﺭﺍﺭﺓ
.ﺍﻟﺨﻠﻴﺔ ﺍﻟﺸﻤﺴﻴﺔ ﻭﺜﺒﺎﺕ ﻓﻭﻟﺘﻴﺔ ﺍﻟﺩﺍﺌﺭﺓ ﺍﻟﻤﻔﺘﻭﺤﺔ
ﺍﻟﻤﺼﺎﺩﺭ
Huang, B.J.; Yang, P.E.; Lin, Y.P.; Lin, B.Y.; Chen, H.J.; Lai, R.C.; Cheng, J.S. (2011).
Solar cell junction temperature measurement of PV module. J. Solar Energy, 85,
388-392.
Jha, A.R. (2010). "Solar Cell Technology and Application". Taylor and Francis Group,
LLC, United States, pp.63-64.
Lienhard IV, J.H.; Lienhard V, J.H. (2008). "A Heat Transfer Text Book". Phlogiston Press,
Cambridge, Massachusetts, U.S.A., pp. 697-698.
Nelson, J. (2003). "The Physics of Solar Cells". Imperial College Press. Ltd. UK, pp.172-
173.
Theraja, B.L. (2009). "Basic Electronics Solid State". S. Chand and Company Ltd., New
Delhi, pp. 645-646.
Tong, X.C. (2011). "Advanced Materials for Thermal Management of Electronic
Packaging". Springer Science Business Media, LLC, USA, pp. 373-374.
Vlachopoulos, J.; Strutt, D. (2002). Basic heat transfer and some application in polymer
processing. Polydynamics, 2, 21-33