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Lab9 210070093

This document describes an experiment to study the effect of temperature on carrier mobility in an N-channel MOSFET. The aim is to understand how temperature can impact practical applications. The experiment involves building circuits to take readings at different temperatures and voltages. Mobility is affected by Coulomb scattering from impurities at low fields and increases with field, while phonon scattering dominates at high fields causing mobility to decrease with field. Results show mobility increases with temperature at low voltages due to Coulomb scattering, but may decrease at high voltages where phonon scattering dominates.

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VIKAS JAAT
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24 views6 pages

Lab9 210070093

This document describes an experiment to study the effect of temperature on carrier mobility in an N-channel MOSFET. The aim is to understand how temperature can impact practical applications. The experiment involves building circuits to take readings at different temperatures and voltages. Mobility is affected by Coulomb scattering from impurities at low fields and increases with field, while phonon scattering dominates at high fields causing mobility to decrease with field. Results show mobility increases with temperature at low voltages due to Coulomb scattering, but may decrease at high voltages where phonon scattering dominates.

Uploaded by

VIKAS JAAT
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 236: Experiment 9

Lab 9: Mobility of Charge Carriers in N-channel


MOSFET and Temperature Dependence

Vikas Kumar, 210070093

20th October 2023

Contents
1 Overview of the experiment 1
1.1 Aim of the experiment . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Basics for the experiment . . . . . . . . . . . . . . . . . . . . . . 1
1.3.1 COULOMB SCATTERING . . . . . . . . . . . . . . . . . 1
1.3.2 PHONON SCATTERING . . . . . . . . . . . . . . . . . . 1
1.3.3 IMP POINTS . . . . . . . . . . . . . . . . . . . . . . . . . 2

2 Lab Exercises 2
2.1 Part 2: Temperature Dependence . . . . . . . . . . . . . . . . . . 4
2.1.1 Trends observed and reasons . . . . . . . . . . . . . . . . 5

3 Experiment completion status 5


1 Overview of the experiment
1.1 Aim of the experiment

• To study the effect on carrier mobility with change in temperature


and voltage and understand how it can affect possible practical
applications.

1.2 Methods

• We built circuits for all the parts on breadboard,appropriately con-


necting the LM35 sensor and oven as per experiment requirements
and noting down all the required readings.
• We plotted the required graphs and did appropriate calculations to
obtain β and see it’s variation with voltage at different tempera-
tures.

1.3 Basics for the experiment


1.3.1 COULOMB SCATTERING

• This type of scattering is associated with the presence of electro-


static centers affecting the motion of channel carriers. The scatter-
ers are mainly impurity ions, interface states, charges in the oxide
and the gate material.
• The mobility due to Coulomb scattering varies with temperature
as T 3/2 .

1.3.2 PHONON SCATTERING

• The atoms in a semiconductor crystal have a certain amount of


thermal energy at temperatures above absolute zero that causes
the atoms to randomly vibrate about their lattice position within
the crystal.

1
• The lattice vibrations cause a disruption in the perfect periodic
potential function. A perfect periodic potential in a solid allows
electrons to move unimpeded, or with no scattering, through the
crystal.
• But the thermal vibrations cause a disruption of the potential func-
tion, resulting in an interaction between the electrons or holes and
the vibrating lattice atoms. This lattice scattering is also referred
to as phonon scattering.
• The mobility due to Phonon scattering varies with temperature as
T 3/2 .

1.3.3 IMP POINTS

• At lower electric fields, the dominating scattering mechanism is


Coulomb scattering. Here, the mobility increases with increase in
electric field.
• At higher electric fields, the dominating scattering mechanism is
Phonon scattering (and eventually surface roughness). Here, the
mobility decreases gradually with increase in electric field.

2 Lab Exercises
Part 1:Characterizing the NMOS

• Circuit for both parts is the same just the bias is different so we
attach the circuit and the readings(including β) for this part below.

2
Figure 1: Circuit for both parts

sqrt(Id )V sVGS

All readings for part-1


Value of VT obtained is about =1.21 Volts
Value of β obtained is about =0.56 (both values obtained by np.polyfit()
using experimental values)

3
2.1 Part 2: Temperature Dependence

• Below are the readings for this part.

Readings at 50C

Readings at 30C

4
Plot of β vs Vgs

Readings at 70C

2.1.1 Trends observed and reasons

• As the temperature increase, the tends to increase at low VGS .Conversely,


at high VGS , increasing the temperature can lead to a decrease in .
• This can be explained as Coulomb scattering dominant at low VGS
and phonon scattering dominant at high VGS and their temperature
dependence.

3 Experiment completion status

I completed the lab work including all plots and assigned analysis suc-
cessfully

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