KONERU LAKSHMAIAH EDUCATION FOUNDATION

(Deemed to be University estd, u/s, 3 of the UGC Act, 1956)

(NAAC Accredited “A++” Grade University)

Green Fields, Guntur District, A.P., India – 522502

Department of Electronics and Communication Engineering

(DST - FIST Sponsored Department)

B.Tech. III ECE PROGRAM

A.Y.2023-24 ODD, Semester-I
21EC3061 Analog VLSI Design
CO1

Session 2: Large and small signal analysis of MOSFET

1. Course Description (Description about the subject)

Analog VLSI Design is a course offered to create students who are academically and
practically skilled in designing analog circuits which are required as building blocks for the
real time applications. During this course, the students will learn about the process of
analyzing the different parameters of a circuit by varying different loads and different
configurations. This course provides insights to amplifiers, Op-amps and mixer circuits.

2. Aim

To nurture students with analog circuit designs and realize importance of tuning the circuit
parameters to improve the efficiency of the design.

3. Instructional Objectives (Course Objectives)

 Apply the fundamentals of MOS transistors for the design of single stage amplifiers.
 Realize the active & passive current Mirrors and analyze the differential amplifiers
with qualitative and quantative approaches.
 Analyze the CMOS Op Amps, and various types of Op Amps with qualitative and
quantative approaches.
 Analyze the high frequency response of CS, CG and CD amplifiers and noise analysis
of various amplifiers and mixers.

4. Learning Outcomes (Course Outcome)

CO1: Apply the fundamentals of MOS transistors for the design of single stage amplifiers.

5. Module Description (CO-1 Description)

Remember the basics properties of MOS Devices. Understand the functionality and Electrical
Properties of MOS Devices. Understand and apply the concept of various amplifiers to find
the circuit parameters.

6. Session Introduction

“Large and small signal analysis of MOSFET”

The session provides insights to analyze the MOSFET with DC biasing and small signal
variations as a linear device.

7. Session description

A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of transistor used
for amplification and switching of electronic signals. MOSFETs can be modeled using a large
signal model, which describes the behavior of the device under varying operating conditions.

The MOSFET large signal model is a nonlinear model that includes several elements, such as
the MOSFET capacitances, resistances, and the channel length modulation effect. The model
is based on the physical properties of the MOSFET and is used to predict its performance
under different input and output conditions.

The MOSFET large signal model can be divided into three main parts:

1. Input characteristics: This part of the model describes the behavior of the MOSFET under
different input voltages. It includes the gate-source capacitance, the threshold voltage, and the
transconductance.

2. Output characteristics: This part of the model describes the behavior of the MOSFET
under different output voltages. It includes the drain-source resistance, the drain-source
capacitance, and the early voltage.

3. Transfer characteristics: This part of the model describes the relationship between the input
and output characteristics of the MOSFET. It includes the drain current, the
transconductance, and the output conductance.

To analyze the MOSFET large signal model, we can use the following steps:

1. Determine the operating mode of the MOSFET (either saturation or linear region).

2. Determine the voltage at the gate, source, and drain terminals.

3. Calculate the drain current using the appropriate equation for the operating mode.

4. Calculate the voltage drop across the drain-source resistance.

5. Calculate the output voltage using the voltage drop across the drain-source resistance and
the voltage at the drain terminal.

6. Repeat steps 2-5 for different input voltages to obtain the transfer characteristics of the
MOSFET.
Overall, the MOSFET large signal model is a useful tool for understanding the behavior of
MOSFETs under different operating conditions and for designing circuits that use these
devices.

Fig.1 DC analysis of a simple MOSFET

Small signal Analysis:

Small signal analysis of MOSFET involves determining how the device will respond to small
variations in its input or output signals. The analysis assumes that the MOSFET is operating
in its linear region, where changes in the input signal result in a proportional change in the
output signal.

To perform small signal analysis of MOSFET, we can follow the following steps:

1. Bias the MOSFET in its linear region: To perform small signal analysis, we need to bias
the MOSFET in its linear region. This can be achieved by applying a DC voltage at the gate
terminal and adjusting it to obtain a specific drain current.

2. Small signal equivalent circuit: Replace the MOSFET with its small signal equivalent
circuit, which includes the transconductance, input and output capacitances, and resistances.

3. Identify the parameters of the small signal model: The small signal model includes
parameters such as transconductance (gm), and output resistance (ro). ( input capacitance
(Cgs), output capacitance (Cgd) for high frequency amplifiers)

4. Determine the voltage gain: The voltage gain is the ratio of the output voltage to the input
voltage. We can determine the voltage gain by calculating the transconductance of the
MOSFET and the load resistance. The voltage gain is given by Av = -gm x RL.

5. Determine the input impedance: The input impedance is the ratio of the input voltage to the
input current. We can determine the input impedance by calculating the input resistance of
the MOSFET.
6. Determine the output impedance: The output impedance is the ratio of the output voltage to
the output current. We can determine the output impedance by calculating the output
resistance of the MOSFET, which is given by Rout = ro(1+gm x RL).

Fig. 1Small signal model of MOSFET

Fig.2 Small signal analysis of MOSFET

V out =−g m V gs ( r 0∨¿ R D ) (1)

V out
Voltage gain A v = =−g m V gs ( r 0∨¿ R D ) (2)
V¿

Overall, small signal analysis of MOSFET is a useful tool for designing and analyzing
circuits that use MOSFETs as amplifiers or switches. The analysis allows us to determine the
voltage gain, input impedance, and output impedance of the device, which are critical
parameters for circuit design.

8. Activities/ Case studies/related to the session

For an E-MOSFET ID(on) = 500 mA at VGS = 10V and VGS (th) = 1V. Determine the drain
current for VGS = 5V.
9. Examples & contemporary extracts of articles/ practices to convey the idea of the
session

Extract from an article titled "Small-Signal Analysis and Modeling of MOSFETs for High-
Frequency Applications" (Source: IEEE Xplore):

"In high-frequency applications, accurate small-signal analysis and modeling of MOSFETs

are crucial for designing high-performance circuits. Small-signal analysis allows us to
determine the intrinsic device parameters such as transconductance (gm), output conductance
(gds), and input capacitance (Cgs). By extracting these parameters, we can accurately predict
the device behavior and design circuits for optimal performance. This article presents a
comprehensive study on the small-signal analysis of MOSFETs, including the impact of
process variations and layout considerations, to enable designers in developing robust and
efficient high-frequency circuits."

10. SAQ's-Self Assessment Questions

1. In large signal analysis of a MOSFET, which region of operation is typically considered?

a) Saturation

b) Cut-off

c) Triode

d) Active

2. The transconductance parameter in small signal analysis of a MOSFET represents the

relationship between:

a) Gate voltage and drain current

b) Gate voltage and source-drain voltage

c) Drain current and source-drain voltage

d) Gate current and drain current

3. The small signal model of a MOSFET is based on which assumption?

a) The drain-source voltage is constant

b) The MOSFET operates in the saturation region

c) The MOSFET operates in the cut-off region

d) The input signal is small enough to linearize the device characteristics

4. In the small signal model of a MOSFET, the transconductance parameter is denoted by:

a) gm
 b) rds

c) VGS

d) ID

5. The output resistance of a MOSFET in small signal analysis is represented by:

a) rds

b) gm

c) VDS

d) ID

6. The small signal voltage gain of a common source MOSFET amplifier is primarily
determined by:

a) gm

b) rds

c) VDS

d) ID

7. The source resistance in small signal analysis is usually assumed to be:

a) Zero

b) Equal to the drain resistance

c) Equal to the gate resistance

d) Infinite

8. The voltage gain of a MOSFET amplifier can be increased by:

a) Increasing the bias current

b) Decreasing the bias current

c) Decreasing the load resistance

d) Increasing the load resistance

9. The frequency response of a MOSFET amplifier is typically limited by:

a) The transconductance parameter

b) The output resistance

c) The input capacitance

d) The drain current

10. In a common source amplifier, the coupling capacitor is used to:

a) Block the DC component of the input signal

b) Provide negative feedback

c) Increase the input capacitance

d) Increase the output resistance

11. The Miller effect in MOSFET amplifiers is caused by:

a) The parasitic capacitance between the input and output terminals

b) The non-linear behavior of the MOSFET in the saturation region

c) The feedback resistance in the amplifier circuit

d) The input capacitance of the MOSFET

12. The gain bandwidth product (GBW) of a MOSFET amplifier is determined by:

a) The transconductance parameter and the load resistance

b) The transconductance parameter and the input capacitance

c) The transconductance parameter and the output capacitance

d) The output resistance and the input capacitance

13. In small signal analysis, the input impedance of a common gate amplifier is typically:

a) High

b) Low

c) Equal to the output impedance

d) Independent of the bias current

14. The common drain amplifier configuration is also known as:

a) Source follower

b) Common source

c) Common gate

d) Cascode

15. In a common drain amplifier, the voltage gain is approximately:

a) Unity
 b) Less than unity

c) Greater than unity

d) Zero

16. The small signal model of a MOSFET includes a capacitor that represents:

a) The gate-source capacitance

b) The drain-source capacitance

c) The gate-drain capacitance

d) The output capacitance

17. The cut-off frequency of a MOSFET amplifier is determined by:

a) The transconductance parameter

b) The output resistance

c) The input capacitance

d) The drain current

18. The load line in MOSFET amplifiers is used to represent:

a) The relationship between drain current and drain-source voltage

b) The relationship between gate voltage and drain current

c) The relationship between gate voltage and drain-source voltage

d) The relationship between gate voltage and source-drain voltage

19. The small signal model of a MOSFET is valid for:

a) Small variations around the operating point

b) Large variations around the operating point

c) Any operating condition

d) Only for saturation region operation

20. The common gate amplifier configuration provides:

a) High input impedance and low output impedance

b) Low input impedance and high output impedance

c) High input impedance and high output impedance

d) Low input impedance and low output impedance

11. Summary

The DC load line is a graphical tool that shows the relationship between the drain current and
the drain-source voltage of a MOSFET for a given biasing circuit. It is a straight line that
passes through two points: the saturation point and the cutoff point. The saturation point is
where the MOSFET enters the saturation region, where the drain current is independent of
the drain-source voltage. The cutoff point is where the MOSFET is turned off, and the drain
current is zero. The slope of the DC load line depends on the value of the load resistor and the
supply voltage.

Small signal analysis allows us to determine the voltage gain, input impedance, and output
impedance of the device, which are critical parameters for circuit design.

12. Terminal Questions

1. What is small signal analysis and why is it important in MOSFET circuit design?

2. How is the small signal model of a MOSFET derived from the large signal model?

3. Explain the concept of transconductance (gm) in small signal analysis of a MOSFET and
its significance.

4. What is the output conductance (gds) of a MOSFET in small signal analysis and how does
it affect circuit performance?

5. Describe the small signal input capacitance (Cgs) of a MOSFET and its impact on high-
frequency performance.

6. How do process variations and temperature affect the small signal parameters of a
MOSFET?

7. Discuss the small signal analysis of a common-source amplifier using a MOSFET,

including the calculation of voltage gain and input/output impedance.

13. Case Studies (Co Wise)

1. Case study for MOSFET basics:

Application: Power amplification in audio systems
Description: MOSFETs are commonly used in audio amplifiers due to their high power-
handling capabilities and low distortion. A case study could involve designing a high-fidelity
audio amplifier using MOSFETs, considering parameters such as power output, distortion,
and efficiency.

2. Case study for operating regions of a MOSFET:

Application: Digital logic gates
Description: MOSFETs are widely used in digital circuits to implement logic gates. A case
study could involve designing a digital circuit that utilizes MOSFETs in various operating
regions (cutoff, triode, and saturation) to demonstrate their switching characteristics and
understand their impact on digital signal processing.
3. Case study for VI characteristics of a MOSFET:
Application: Solar power conversion
Description: MOSFETs are utilized in solar power inverters for converting DC power
generated from solar panels into AC power suitable for household consumption. A case study
could involve analyzing the VI characteristics of a MOSFET in a solar inverter circuit,
considering factors such as efficiency, maximum power point tracking, and grid
synchronization.

14. Answer Key

1. a) Saturation

2. a) Gate voltage and drain current

3. d) The input signal is small enough to linearize the device characteristics

4. a) gm

5. a) rds

6. a) gm

7. a) Zero

8. d) Increasing the load resistance

9. c) The input capacitance

10. a) Block the DC component of the input signal

11. a) The parasitic capacitance between the input and output terminals

12. b) The transconductance parameter and the input capacitance

13. b) Low

14. a) Source follower

15. a) Unity

16. c) The gate-drain capacitance

17. c) The input capacitance

18. a) The relationship between drain current and drain-source voltage

19. a) Small variations around the operating point

20. b) Low input impedance and high output impedance 15. Glossary

Transconductance: Transconductance indicates the amount of control the gate has on the
drain current. Mathematically, the transconductance (gm) is defined as: g m = ∂ I D /∂ V G S.
It is given the name transconductance because it gives the relationship between the input
voltage and the output current.
Voltage gain: Voltage gain is the ratio of output voltage to the input voltage,

16. References of books, sites, links

Text Books:

1) BehzadRazavi, “Design of Analog CMOS Integrated Circuits”, Tata Mc Graw Hill, (2005)

2) Jacob Baker, “CMOS Mixed Signal Circuit Design”, John Wiley, (2008)

Reference Books:

1) Neil H. E. Weste and David. Harris Ayan Banerjee, “CMOS VLSI Design” – Pearson
Education, 1999.

2) Gray& Mayer, “Analysis & Design of Analog Integrated Circuits”, 4th edition, Wiley,
(2001).17. Keywords

Web references:

1. https://www.coursera.org/learn/mosfet
2. https://nptel.ac.in/courses/108106068
3. https://www.coursera.org/learn/rf-mmwave-circuit-design#syllabus

17. Keywords

MOSFET, small signal, DC operating point, load line