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Assignments 1 FundamentalsofSemiconductor - 2023fall

The document provides 15 homework questions on semiconductor fundamentals. Students are allowed to discuss the homework but must submit their own work. The assignments must be completed individually in PDF format and submitted through the online system by the deadline. The questions cover topics such as elemental and compound semiconductors, bandgap energies, Fermi levels, doping, carrier concentrations, conductivity, diffusion, and generation and recombination of excess carriers.

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52 views3 pages

Assignments 1 FundamentalsofSemiconductor - 2023fall

The document provides 15 homework questions on semiconductor fundamentals. Students are allowed to discuss the homework but must submit their own work. The assignments must be completed individually in PDF format and submitted through the online system by the deadline. The questions cover topics such as elemental and compound semiconductors, bandgap energies, Fermi levels, doping, carrier concentrations, conductivity, diffusion, and generation and recombination of excess carriers.

Uploaded by

djw2982274252
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Notice: The assignments are open-book and everyone is free to discuss homework with

each other. But the homework you submit must be your own.
Please finish the homework before the deadline, then convert it into a PDF document,
and finally submit it through the ISPACE system. The home work should be written in
English.

Assignments-1-Fundamentals of Semiconductor

1. Please list two elemental semiconductor materials and two compound semiconductor
materials according to your best knowledge.
2. The bandgap energy Eg in a semiconductor is usually a slight function of temperature. In
some cases, the bandgap energy versus temperature can be modeled by
αT 2
Eg Eg ( 0 ) −
=
β +T
where Eg(0) is the value of the bandgap energy at T = 0 K. For silicon, the parameter
values are Eg(0) = 1.170 eV, α = 4.73 × 10-4 eV/K, and β = 636 K. Please calculate the
bandgap energy at T = 300 K for silicon.
3. Determine the probability that an energy level is occupied by an electron if the state is
above the Fermi level by (a) kT, (b) 5kT, and (c) 10kT.
4. The probability that a state at EC + kT is occupied by an electron is equal to the
probability that a state at EV – kT is empty. Derive the position of the Fermi energy level
EF as a function of EC and EV.
5. Silicon at T = 300 K is doped with arsenic atoms such that the concentration of electrons
is n0 = 7 × 1015 cm-3.
(a) Please calculate the value of EC – EF.
(b) Please determine the value of EF – EV.
(c) Calculate p0.
(d) Which carrier is the minority carrier?
6. Determine the equilibrium electron and hole concentrations in silicon for the following
doping conditions:
(a) T = 300 K, ND = 1 × 1015 cm-3, NA = 4 × 1015 cm-3;
(b) T = 300 K, ND = 3 × 1016 cm-3, NA = 0 cm-3;
(c) T = 300 K, ND = 2 × 1015 cm-3, NA = 2 × 1015 cm-3.
7. In silicon at T = 300 K, it is found that NA = 1015 cm-3 but p0 = 104 cm-3.
(a) Is the silicon n-type or p-type?
(b) Is the hole majority or minority?
(c) What must be the concentration of donor impurities?
8. The concentration of donor impurity atoms in silicon is ND = 1015 cm-3. Assume an
electron mobility of μn = 1300 cm2/(V*s) and a hole mobility of μp = 450 cm2/(V*s).
What is the conductivity of the silicon?
9. A silicon sample is 2.5 cm long and has a cross-sectional area of 0.1 cm2. The silicon is
n-type with a donor impurity concentration of ND = 2 × 1015 cm-3. The resistance of this
sample is measured and found to be 70 Ω. What is the electron mobility?
10. Consider a sample of silicon at T = 300 K. Assume that the electron concentration varies
linearly with distance, as shown in Figure P19. The diffusion current density is found to
be Jn = 0.19 A/cm2. If the electron diffusion coefficient is Dn = 25 cm2/s, please
determine the electron concentration at x = 0.

Figure P19
11. The electron diffusion current density in a semiconductor is a constant and is given by Jn
= –2 A/cm2. The electron concentration at x = 0 is n(0) = 1015 cm-3. Calculate the electron
concentration at x = 20 μm if the material is silicon with Dn = 30 cm2/s.
12. The concentration of holes in a semiconductor is given by p(x) = 5 × 1015e-x/Lp cm-3 for x
≥ 0. Determine the hole diffusion current density at (a) x = 0 and (b) x = Lp if the material
is silicon with Dp = 10 cm2/s and Lp = 50 μm.
13. Consider a silicon sample at T = 300 K that is uniformly doped with acceptor impurity
atoms at a concentration of NA = 1016 cm-3. At t = 0 s, a light source is shining on the
silicon, generating excess carriers uniformly throughout the whole silicon sample at a
rate of GL = 8 × 1020 cm-3s-1. Assume the minority carrier lifetime is τn0 = 5 × 10-7 s, and
assume mobility values of μn = 900 cm2/(V*s) and μp = 380 cm2/(V*s).
(a) Determine the conductivity of the silicon as a function of time for t ≥ 0 s.
(b) What are the values of conductivity at t = 0 s and t = +∞?
14. An n-type silicon doped at ND = 4 × 1016 cm-3 is steadily illuminated by light such that
the generation rate GL = 2 × 1021 cm-3s-1. Assume that τn0 = 10-6 s and τp0 = 5 × 10-7 s.
(a) Determine the value of EC – EF at the thermal equilibrium condition.
(b) Calculate the quasi-Fermi levels for electrons EFn and holes EFp with respect to Ec.
(c) What is the difference (in eV) between EFn and EF?
(d) What is the difference (in eV) between EFn and EFp?
15. Consider an n-type silicon doped at ND = 5 × 1015 cm-3. It is found that the difference
between EFn and EF is EFn – EF = 1.02 × 10-3 eV.
(a) What is the excess carrier concentration?
(b) Does this condition correspond to low injection? Why or why not?

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