DATA SHEET

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Small Signal MOSFET V(BR)DSS RDS(on) MAX ID MAX

60 V, 380 mA, Single, N−Channel, SOT−23 60 V

1.6 W @ 10 V
380 mA
2.5 W @ 4.5 V

2N7002K, 2V7002K
SIMPLIFIED SCHEMATIC
Features
• ESD Protected
Gate 1
• Low RDS(on)
• Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique 3 Drain
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Source 2
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(Top View)
Applications
• Low Side Load Switch
• Level Shift Circuits 3

• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc. 1
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
SOT−23
Rating Symbol Value Unit CASE 318
Drain−to−Source Voltage VDSS 60 V
Gate−to−Source Voltage VGS ±20 V
MARKING DIAGRAM
Drain Current (Note 1) ID mA
Steady State 1 sq in Pad TA = 25°C 380
TA = 85°C 270
7K MG
Drain Current (Note 2) ID mA G
Steady State Minimum Pad TA = 25°C 320
TA = 85°C 230
Power Dissipation PD mW 7K = Device Code
Steady State 1 sq in Pad 420 M = Date Code*
Steady State Minimum Pad 300 G = Pb−Free Package
Pulsed Drain Current (tp = 10 ms) IDM 5.0 A (NOTE: Microdot may be in either location)
Operating Junction and Storage TJ, TSTG −55 to °C *Date Code orientation and/or location may vary
Temperature Range +150 depending upon manufacturing location.

Source Current (Body Diode) IS 300 mA

Lead Temperature for Soldering Purposes TL 260 °C ORDERING INFORMATION
(1/8″ from case for 10 s)
Device Package Shipping†
Gate−Source ESD Rating ESD 2000 V
(HBM, Method 3015) 2N7002KT1G, SOT−23 3000 / Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the 2V7002KT1G (Pb−Free)
device. If any of these limits are exceeded, device functionality should not be
2N7002KT7G SOT−23 3500 / Tape & Reel
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. (Pb−Free)
2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. †For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

September, 2023 − Rev. 19 2N7002K/D
 2N7002K, 2V7002K

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient − Steady State (Note 3) RqJA 300 °C/W
Junction−to−Ambient − t ≤ 5 s (Note 3) 92
Junction−to−Ambient − Steady State (Note 4) 417
Junction−to−Ambient − t ≤ 5 s (Note 4) 154
3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 71 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1 mA
VDS = 60 V TJ = 125°C 10
VGS = 0 V, TJ = 25°C 100 nA
VDS = 50 V
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.3 V
Negative Threshold Temperature VGS(TH)/TJ 4.0 mV/°C
Coefficient
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS 24.5 45 pF
VGS = 0 V, f = 1 MHz,
Output Capacitance COSS 4.2 8.0
VDS = 20 V
Reverse Transfer Capacitance CRSS 2.2 5.0
Total Gate Charge QG(TOT) 0.7 nC
Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V; 0.1
Gate−to−Source Charge QGS ID = 200 mA 0.3
Gate−to−Drain Charge QGD 0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 6)
Turn−On Delay Time td(ON) 12.2 ns
Rise Time tr VGS = 10 V, VDD = 25 V, 9.0
Turn−Off Delay Time td(OFF) ID = 500 mA, RG = 25 W 55.8
Fall Time tf 29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.2 V
IS = 200 mA TJ = 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures

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 2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

1.6 1.2
VGS = 10 V 5.0 V
4.5 V
9.0 V
8.0 V 4.0 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

1.2
7.0 V
6.0 V 0.8
3.5 V
0.8
TJ = 25°C
3.0 V 0.4
0.4
2.5 V
TJ = 125°C TJ = −55°C
0 0
0 2 4 6 0 2 4 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

3.2 3.2
VGS = 4.5 V VGS = 10 V
2.8 2.8
TJ = 125°C
2.4 TJ = 85°C 2.4 TJ = 125°C

2.0 TJ = 25°C 2.0 TJ = 85°C

1.6 1.6 TJ = 25°C

TJ = −55°C
1.2 1.2
TJ = −55°C
0.8 0.8

0.4 0.4
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and
Temperature Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

2.4 2.2
ID = 0.2 A
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

2.0 ID = 500 mA
1.8
VGS = 4.5 V
1.6
VGS = 10 V
1.4
ID = 200 mA
1.2

1.0
0.8

0.4 0.6
2 4 6 8 10 −50 −25 0 25 50 75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with
Voltage Temperature

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 2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

30 5

VGS, GATE−TO−SOURCE VOLTAGE (V)

Ciss
TJ = 25°C
4 ID = 0.2 A
C, CAPACITANCE (pF)

20
3
TJ = 25°C
VGS = 0 V
Coss 2
10

Crss
0 0
0 4 8 12 16 20 0 0.2 0.4 0.6 0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

10 2.5
2.4 ID = 250 mA
VGS = 0 V VGS(TH), THRESHOLD VOLTAGE (V)
2.3
IS, SOURCE CURRENT (A)

2.2
2.1
1 2.0
1.9
1.8
TJ = 85°C TJ = 25°C 1.7
1.6
0.1 1.5
1.4
1.3
1.2
1.1
0.01 1.0
0.4 0.6 0.8 1.0 1.2 −50 −25 0 25 50 75 100 125 150
VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Threshold Voltage with
Temperature

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 2N7002K, 2V7002K

TYPICAL CHARACTERISTICS

1000
RqJA(t) (°C/W) EFFECTIVE TRANSIENT

Duty Cycle = 0.5

100 0.2
THERMAL RESISTANCE

0.1
0.05
10 0.02

0.01
1
SINGLE PULSE

0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 11. Thermal Response − 1 sq in pad

1000
RqJA(t) (°C/W) EFFECTIVE TRANSIENT

Duty Cycle = 0.5

0.2
100
THERMAL RESISTANCE

0.1
0.05
0.02
10

0.01
1
SINGLE PULSE

0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE TIME (s)
Figure 12. Thermal Response − minimum pad

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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1

GENERIC
MARKING DIAGRAM*

XXXMG
G
1

XXX = Specific Device Code

M = Date Code
G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.

STYLES ON PAGE 2

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 2

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023

STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:

CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE

STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE

STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION

STYLE 27: STYLE 28:

PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SOT−23 (TO−236) PAGE 2 OF 2

onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

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