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KST 9013 C

This document provides specifications for an NPN transistor with the model number KST9013C. It includes details like the package type (SOT-23), maximum ratings for voltage and current, electrical characteristics at 25°C like gain (hFE), saturation voltage and cutoff current. A graph shows the transistor's static characteristic and common emitter gain curve. It also lists the manufacturer and marking used on the device.

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كردن سيدي محمد
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50 views2 pages

KST 9013 C

This document provides specifications for an NPN transistor with the model number KST9013C. It includes details like the package type (SOT-23), maximum ratings for voltage and current, electrical characteristics at 25°C like gain (hFE), saturation voltage and cutoff current. A graph shows the transistor's static characteristic and common emitter gain curve. It also lists the manufacturer and marking used on the device.

Uploaded by

كردن سيدي محمد
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SMD Type IC

Transistors
SMD Type

NPN Transistors
KST9013C
SOT-23 Unit: mm
2.9 -0.1
+0.1

0.4 -0.1
+0.1

0.4
Features

+0.1
2.4 -0.1

+0.1
1.3 -0.1
Excellent hFE linearity
Collector Current :IC=0.5A

0.55
1 2

0.95 -0.1
+0.1
0.1 -0.01
+0.05

1.9 -0.1
+0.1

+0.1
0.97 -0.1
1.Base

2.Emitter

+0.1
0.38 -0.1
0-0.1
3.collector

Absolute Maximum Ratings Ta = 25


Parameter Symbol Rating Unit
Collector - Base Voltage VCBO 40 V
Collector - Emitter Voltage VCEO 25 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 to 150

Electrical Characteristics Ta = 25
Parameter Symbol Testconditions Min Typ Max Unit
Collector - base breakdown voltage VCBO Ic= 100 A IE=0 40 V
Collector - emitter breakdown voltage VCEO Ic= 0.1mA IB=0 25 V
Emitter - base breakdown voltage VEBO IE=100 A IC=0 5 V
Collector cut - off current ICBO VCB=40 V , IE=0 0.1 A
Collector cut -off current ICEO VCE=20V , IB=0 1 A
Emitter cut - off current IEBO VEB= 5V , IC=0 0.1 A
VCE=1V, IC= 50mA 144 202
DC current gain hFE
VCE=1V, IC=500mA 40
Collector - emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V
Base - emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V
Transition frequency fT VCE=6V, IC= 20mA,f=30MHz 150 MHz

Ƶ Marking
Marking J3Y.

1
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SMD Type
SMD Type IC
Transistors

KST9013C
Typical Characteristics
Static Characteristic hFE —— IC
100 1000

COMMON COMMON EMITTER


400uA EMITTER VCE=1V
Ta=25ć
(mA)

80 350uA Ta=100ć

hFE
300uA
IC

DC CURRENT GAIN
Ta=25ć
COLLECTOR CURRENT

60
250uA
100
200uA
40
150uA

100uA
20

IB=50uA
0 10
0 4 8 12 16 20 1 3 10 30 100 500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
500 1.2

300
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
VOLTAGE VCEsat (mV)

0.8 Ta=25ć

100

Ta=100ć

Ta=100ć
0.4
30 Ta=25ć

ȕ=10 ȕ=10
10 0.0
1 3 10 30 100 500 1 3 10 30 100 500

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob/ Cib —— VCB/ VEB


100 100
COMMON EMITTER f=1MHz
VCE=1V IE=0/ IC=0
30 Ta=25ć
(mA)

Cib
30
Ta=100ć
(pF)
IC

10
COLLECTOR CURRENT

C
CAPACITANCE

3 10 Cob

Ta=25ć
1

0.3

0.1 1
0.0 0.2 0.4 0.6 0.8 1.0 0.1 0.3 1 3 10 20

BASE-EMMITER VOLTAGE VBE (V) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
1000 400
VCE=6V
Ta=25ć
(MHz)

COLLECTOR POWER DISSIPATION

300 300
fT
TRANSITION FREQUENCY

PC (mW)

100 200

100

10 0
10 30 100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (ć)

2
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