LECTURE-1

Introduction
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow
of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three
terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to
the gate, which in turn alters the conductivity between the drain and source.

FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is,
FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but
not both. Many different types of field effect transistors exist. Field effect transistors generally display
very high input impedance at low frequencies. The most widely used field-effect transistor is the
MOSFET (metal-oxide-semiconductor field-effect transistor).

Definition: FET is an acronym used for “field effect transistor”. It is a three terminal
unipolar device in which conduction is manipulated with the help of applied electric field. The
name itself gives a brief idea about its working principle, “field effect”, these two words clearly
indicates it is a transistor controlled by electric field.

Thus, it is also referred as a voltage controlled device in which only majority charge carriers
are involved in the conduction mechanism. It comprises of three terminals, i.e. source, gate,
and drain.

The circuit symbol described in the below diagram clearly illustrates the three terminals of
field effect transistor.

History of Field Effect Transistor

In the year 1926, the idea of field effect transistor (FET) was introduced by Lilienfield. After
this in the year 1935, Heil had also put light on field effect transistor. But by this time FETs
were not much popular. It was in the year 1940, the significance of FETs gain momentum.

Notes by Dr. Prem Pal Singh

 This is because during the 1940s the research was going on semiconductors at Bell
laboratories.

Significance of FET

Before discussing the significance of FET, I would like to share the crucial concept regarding
FET. The transistor in its name is often confused with a bipolar transistor. But there exists a
vast difference between FET and BJT, i.e. bipolar transistor.

Although both are transistors and both, involve conduction of current and also both have
three terminals, but the similarities end here. The BJT uses injection and collection of
minority charge carriers, and this process of injection and collection is done during forward
biasing of the P-N junction. On the contrary, the FETs uses an electric field to vary the
depletion width during reverse biasing of the junction.

Thus, the conduction in BJTs involve majority carriers as well as minority carriers, but the
conduction mechanism in FETs is only due to majority charge carriers. This is the reason FETs
are termed as a unipolar device.

Water Analogy to understand the concept of FET

To understand how an FET works, let’s use an analogy. Analogies often make things simple to
understand even a complex concept. The water source can be understood as the source of FET,
the vessel which collects water is analogous to the drain terminal of FET. Let’s have a quick
look at the below diagram, after that understanding the concept of FET will be a cake walk.

Notes by Dr. Prem Pal Singh

 Lecture-2

N-channel JFET Biasing

The internal diagram for N-channel JFET transistor is shown below. This is a transistor with N-type
of channel and with P-type materials of the region. If the gate is diffused into the N-type channel,
then a reverse biased PN-junction is formed which results a depletion region around the gate terminal
when no external supply is applied to the transistor. Generally the JFETs are called as depletion mode
devices.

Biasing circuit of N-channel JFET

This depletion region produces a potential gradient with the variation of thickness around the PN-
junction. This PN-junction opposes the current flow through the channel by reducing the channel
width and by increasing the channel resistance.

Now the channel of JFET conducts with zero bias voltage applied as input. Because of the large
portion of the depletion region formed between the gate-drain and the small portion of the depletion
region between gate and source.

If small voltage (VDS) applied between the drain-source with zero gate voltage (VG) then current (IDS)
will flow through this channel. Now if we apply a small amount of negative voltage (-VGS) (i.e.
reverse biased condition) then the depletion region width increases, which results in decreasing the
portion of the channel length and reduces the conduction of the channel.

This process is called “squeezing effect”. If we will increase more negative voltage at the gate
terminal then it reduces the channel width until no current flows through the channel. Now at this
condition the JFET is said to be “pinched-off”. The applied voltage at which the channel of FET
closes is called as “pinched-off voltage (VP)”.

V-I Characteristics of FET

(1) Output / drain characteristic: The variation of drain current (ID) with drain-source voltage
(VDS) at constant gate source voltage (VGS) provides the drain characteristic. For VGS off , the
value of VDS at which the drain current becomes constant gives pinch off voltage.
(2) Transfer characteristic: The variation of drain current (ID) with gate-source voltage VGS at
constant drain-source voltage VDS. The value of VGS at which ID becomes zero called as pinch off
voltage.

Circuit Diagram:

Notes by Dr. Prem Pal Singh

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 Drain Characteristics

Transfer Characteristics

Notes by Dr. Prem Pal Singh

 Result: The following results can be written on the basis of characteristic curve.
(A) Output or drain characteristic curve shows that drain current ID at constant VGS increases
initially with drain-source voltage VDS and after that it becomes constant. At VGS=0volt,
drain current saturates at 3.5 volt value of VDS . Hence this characteristic curve provides
that VP=3.5volts.
(B) The transfer characteristic indicates that the drain current ID decreases with the gate- source
voltage VGS at constant VDS. The current becomes zero at 3.4 volts. This is called as pinch
off voltage.

Notes by Dr. Prem Pal Singh

 Lecture-3
Configuration of FET
The terminology used for denoting the three basic FET configurations indicates the FET electrode that is
common to both input and output circuits. This gives rise to the three terms: common gate, common drain
and common source.

The three different FET circuit configurations are:

Common source: This FET configuration is probably the most widely used. The common
source circuit provides a medium input and output impedance levels. Both current and voltage
gain can be described as medium, but the output is the inverse of the input, i.e. 180° phase
change. This provides a good overall performance and as such it is often thought of as the most
widely used configuration.

Common drain: This FET configuration is also known as the source follower. The reason for
this is that the source voltage follows that of the gate. Offering a high input impedance and a
low output impedance it is widely used as a buffer. The voltage gain is unity, although current
gain is high. The input and output signals are in phase.

Common drain / source follower FET circuit configuration

Common gate: This transistor configuration provides a low input impedance while offering a
high output impedance. Although the voltage is high, the current gain is low and the overall
power gain is also low when compared to the other FET circuit configurations available. The
other salient feature of this configuration is that the input and output are in phase.

Common gate FET circuit configuration

Notes by Dr. Prem Pal Singh

 Lecture-4

FET Biasing

The Parameters of FET is temperature dependent .When temperature increases

drain resistance also increases, thus reducing the drain current.

Unlike BJTs, thermal runaway does not occur with FETs

However, the wide differences in maximum and minimum transfer characteristics

make ID levels unpredictable with simple fixed-gate bias voltage.

Different biasing circuits of FET are

1. Fixed bias circuits

2. Self bias circuits
3. Voltage bias circuits

Fixed bias circuits

DC bias of a FET device needs setting of gate-source voltage VGS to give desired
drain current ID . For a JFET drain current is limited by the saturation current IDS.
Since the FET has such a high input impedance that no gate current flows and the
dc voltage of the gate set by a voltage divider or a fixed battery voltage is not
affected or loaded by the FET.

Notes by Dr. Prem Pal Singh

 Fixed dc bias is obtained using a battery VQG. This battery ensures that the gate is
always negative with respect to source and no current flows through resistor RG
and gate terminal that is IG =0. The battery provides a voltage VGS to bias the N-
channel JFET, but no resulting current is drawn from the battery VGG. Resistor RG
is included to allow any ac signal applied through capacitor C to develop across
RG. While any ac signal will develop across RG, the dc voltage drop across RG is
equal to IG RGi.e. 0 volt.
Calculate VGS
For DC analysis IG =0., applying KVL to the input circuits
VGS+ VGG=0
VGS= - VGG
As VGS is a fixed dc supply, hence the name fixed bias circuit
Calculate IDQ
IDQ=IDss(1- VGS/VGp)2
Calculate VDS

This current IDQ then causes a voltage drop across the drain resistor RD and is
given as

VDSQ = VDD – ID RD
Disadvantage
The fixed bias circuit of FET requires two power supplies.
Self-Bias circuits
Self-Bias circuits is the most common method for biasing a JFET. Self-bias
circuit for N-channel JFET is shown in figure

Notes by Dr. Prem Pal Singh

 The gate source junction of JFET must be always in reverse biased condition
.No gate current flows through the reverse-biased gate-source, the gate current IG
= 0 and, therefore,vG = iG RG = 0

With a drain current ID the voltage at the S is

Vs= IDRs

1)The gate-source voltage is then

VGS = VG - Vs = 0 – ID RS = – ID RS

So voltage drop across resistance Rs provides the biasing voltage VGg and no
external source is required for biasing and this is the reason that it is called self-
biasing. 2)Calculate IDQ

ID=IDSS(1- VGS/ VP)2

Substituting the value of VGS

ID= IDSS (1+IDRS / VP)2

3)The operating point (that is zero signal ID and VDS) can easily be determined
from equation given below :

Notes by Dr. Prem Pal Singh

 VDS = VDD – ID(RD + RS)
Self biasing of a JFET stabilizes its quiescent operating point against any change
in its parameters like transconductance. Any increase in voltage drop across RS,
therefore, gate-source voltage, VGS becomes more negative and thus increase in
drain current is reduced.

Voltage -Divider Bias circuits

The resistors RGl and RG2 form a potential divider across drain supply VDD. The
voltage V2 across RG2 provides the necessary bias. The additional gate resistor RGl
from gate to supply voltage facilitates in larger adjustment of the dc bias point
and permits use of larger valued RS.
The coupling capacitors are assumed to be open circuit for DC analysis
1) The gate is reverse biased so that IG = 0 and gate voltage
VG =V2 = (VDD/R G1 + R G2 ) *RG2

2) Applying KVL to the input circuit we get

VGS= VG – VS = VG - ID RS

3) IDQ= IDSS(1- VGS/ VP)2

4) VDS = VDD – ID (RD + RS)

The operating point of a JFET amplifier using the Voltage -Divider Bias is
determined by
IDQ= IDSS(1- VGS/ VP)2

Notes by Dr. Prem Pal Singh

 VDSQ = VDD – ID (RD + RS)
VGSQ = VG – ID RS

Example Problems
1) Determine IDQ, VGSQ, VD, VS, VDS, and VDG

Notes by Dr. Prem Pal Singh

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 Lecture-5

MOSFET

MOSFETs or Metal Oxide Silicon Field Effect Transistors were invented to overcome the disadvantages
posed by FETs, such as the slow operation, high drain resistance, and moderate input impedance. In this
article, let us learn about the basics of MOSFET.

MOSFET Basics

What is a MOSFET?
Metal Oxide Silicon Field Effect Transistors commonly known as MOSFETs are electronic devices used
to switch or amplify voltages in circuits. It is a voltage controlled device and is constructed by three
terminals. The terminals of MOSFET are named as follows:

 Source

 Gate

 Drain

 Body

The figure shows a practical MOSFET.

MOSFET Construction
The circuit of MOSFET is typically represented as follows:

Notes by Dr. Prem Pal Singh

  The p-type semiconductor forms the base of the MOSFET.

 The two types of the base are highly doped with an n-type impurity which is marked as n+ in the
diagram.

 From the heavily doped regions of the base, the terminals source and drain originate.

 The layer of the substrate is coated with a layer of silicon dioxide for insulation.

 A thin insulated metallic plate is kept on top of the silicon dioxide and it acts as a capacitor.

 The gate terminal is brought out from the thin metallic plate.

 A DC circuit is then formed by connecting a voltage source between these two n-type regions.

Working Principle of MOSFET

When voltage is applied to the gate, an electrical field is generated that changes the width of the channel
region, where the electrons flow. The wider the channel region, the better conductivity of a device will be.

MOSFET Types
The classification of MOSFET based on the construction and the material used is given below in the
flowchart.

Notes by Dr. Prem Pal Singh

 MOSFETs are of two classes: Enhancement mode and depletion mode. Each class is available as n-channel
or p-channel; hence overall they tally up to four types of MOSFETs.

Depletion Mode
When there is no voltage across the gate terminal, the channel shows maximum conductance. When the
voltage across the gate terminal is either positive or negative, then the channel conductivity decreases.

Enhancement Mode
When there is no voltage across the gate terminal, then the device does not conduct. When there is the
maximum voltage across the gate terminal, then the device shows enhanced conductivity.

The N-channel MOSFETs are abbreviated as NMOS and are symbolically represented as shown in the
figure below:

Notes by Dr. Prem Pal Singh

 Similarly, the P-channel MOSFETs are abbreviated as PMOS and are symbolically represented as follows:

Operating Regions of MOSFET

A MOSFET is seen to exhibit three operating regions. Here, we will discuss those regions.

Cut-Off Region
The cut-off region is a region in which there will be no conduction and as a result, the MOSFET will be
OFF. In this condition, MOSFET behaves like an open switch.

Notes by Dr. Prem Pal Singh

 Ohmic Region
The ohmic region is a region where the current (IDS)increases with an increase in the value of VDS. When
MOSFETs are made to operate in this region, they are used as amplifiers.

Saturation Region
In the saturation region, the MOSFETs have their IDS constant in spite of an increase in VDS and occurs
once VDS exceeds the value of pinch-off voltage VP. Under this condition, the device will act like a closed
switch through which a saturated value of IDS flows. As a result, this operating region is chosen whenever
MOSFETs are required to perform switching operations.

MOSFET as a Switch
MOSFETs are commonly used as switches. The circuit below shows the configuration of MOSFET when
it is used as a switch.

In the circuit arrangement, an Enhancement-mode N-channel MOSFET is used to switch a simple lamp
“ON” and “OFF.” The input fate voltage Vgs is adjusted to an appropriate positive voltage to switch “ON”
the device and the voltage level is set to a negative value or zero to turn it “OFF.”

Notes by Dr. Prem Pal Singh

 Lecture-6
What is transconductance?

Transconductance is an expression of the performance of a bipolar transistor or field-

effect transistor (FET). In general, the larger the transconductance figure for a device,
the greater the gain(amplification) it is capable of delivering, when all other factors are
held constant.

Formally, for a bipolar device, transconductance is defined as the ratio of the change in
collector current to the change in base voltage over a defined, arbitrarily small interval
on the collector-current-versus-base-voltage curve. For an FET, transconductance is the
ratio of the change in drain current to the change in gate voltage over a defined,
arbitrarily small interval on the drain-current-versus-gate- voltage curve.

The symbol for transconductance is gm. The unit is thesiemens, the same unit that is used
for direct-current (DC) conductance.

If dI represents a change in collector or drain current caused by a small change in base

or gate voltage dE, then the transconductance is approximately:

gm = dI / dE

As the size of the interval approaches zero -- that is, the change in base or gate voltage
becomes smaller and smaller -- the value of dI / dE approaches the slope of a line tangent
to the curve at a specific point. The slope of this line represents the theoretical
transconductance of a bipolar transistor for a given base voltage and collector current,
or the theoretical transconductance of an FET for a given gate voltage and drain current.

Notes by Dr. Prem Pal Singh

 Lecture-7

MOSFET Characteristics
The characteristics of the MOSFET are also dependent on the depletion and the enhancement
modes.

Enhancement Mode Characteristics

The most preferred transistor in MOSFET is of enhancement type. In this type, there is no
conduction seen if the voltage at the gate and the source terminals are zero. As the voltage
reaches the threshold the conductivity tends to increase.

Depletion Mode Characteristics

In this mode, the width of this depletion region is dependent on the applied voltage at the
terminal gate. If it is increased in terms of the positive polarity considered then this increment
can be seen in the width of the depletion region. This mode of a transistor is very rarely
preferred during the design of the electronic circuitry.

Notes by Dr. Prem Pal Singh

 I-V Characteristic of N-Channel MOSFET

MOSFET Applications

The applications of the MOSFET are vast in terms of the electronics

(1) The switching consequence of the devices based on the threshold value makes the
MOSFET to work as a switch. Based on the channels the polarity of the biasing voltage may
vary.
(2) By the application of the pulse-width modulation technique (PWM) the movement of the
motors like DC, Stepper, etc… can get controlled.
(3) The amplifiers designed from these devices are used in the systems of the sounds as well
as the radio frequency systems.
(4) The operation of the switching leads to the exploitation of the circuits of the chopper. In
this, the value of the DC voltages is converted into the AC voltage by maintaining the same
levels for the amplitudes.
(5) If the depletion region of the MOSFET is made in the configuration of the source follower
then these circuits are utilized as the voltage regulators in the linear mode.
(6) As the sources that provide the constant value of the current these transistors are utilized.
(7) In order to drive the current or the value of the voltage at a high level, these are preferred
in the circuits of oscillators or the mixers.
(8) These are the transistors with the impedance at the high level and possess the switching
speed to be at a high level. Because of these characteristics, these are preferred for digital
electronics.
(9) It is preferred in various types of systems of sound in the automobiles and the reinforced
systems of the sound.
(10) These are preferred in the designing of the calculators.

Hence the above are some of the various applications of the MOSFET.

Please refer to this link to know more about MOSFET MCQs

In this way, the types of MOSFETs are discussed. Though it has a complex design than
JFET it is more preferred in analog and digital electronics. This has the features that are
responsible for its tremendous growth in technology. Now based on the description can you
anyone give an example of an application that used JFET but later replaced with the MOSFET?

Notes by Dr. Prem Pal Singh