Scribd
Upload
3K views4 pages

A2shb-Sot 23

1. The document provides information on the SI2305 N-Channel 20-V plastic-encapsulated MOSFET, including its features, applications, electrical characteristics, and typical characteristics. 2. Key specifications include a continuous drain current of 2.8A, drain-source breakdown voltage of 20V, and on-resistance as low as 0.045Ω. 3. The MOSFET is suitable for applications such as load switches for portable devices and DC/DC converters due to its high current capability and low on-resistance.

Uploaded by

bhffws8crf
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
3K views4 pages

A2shb-Sot 23

1. The document provides information on the SI2305 N-Channel 20-V plastic-encapsulated MOSFET, including its features, applications, electrical characteristics, and typical characteristics. 2. Key specifications include a continuous drain current of 2.8A, drain-source breakdown voltage of 20V, and on-resistance as low as 0.045Ω. 3. The MOSFET is suitable for applications such as load switches for portable devices and DC/DC converters due to its high current capability and low on-resistance.

Uploaded by

bhffws8crf
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

SI2305

SI2302
SI2301

6273ODVWLF(QFDSVXODWH026)(76
1&KDQQHO9
SI2301  '6 026)(7

)($785(
7UHQFK)(73RZHU026)(7

$33/,&$7,216
z /RDG6ZLWFKIRU3RUWDEOH'HYLFHV
z '&'&&RQYHUWHU

Equivalent Circuit
MARKING

A2SHB
3400
R
3400

1.GATE
2.SOURCE
3.DRAIN

ЯXQOHVVRWKHUZLVHQRWHG 
0D[LPXPUDWLQJV 7D Я

3DUDPHWHU 6\PERO 9DOXH 8QLW


'UDLQ6RXUFH9ROWDJH 9'6 
9
*DWH6RXUFH9ROWDJH 9*6 “
&RQWLQXRXV'UDLQ&XUUHQW ,' 2.8

$
&RQWLQXRXV6RXUFH'UDLQ&XUUHQW 'LRGH&RQGXFWLRQ  ,6 

3RZHU'LVVLSDWLRQ 3'  :
7KHUPDO5HVLVWDQFHIURP-XQFWLRQWR$PELHQW W”V  5ș-$  Я:
2SHUDWLQJ-XQFWLRQ 7- 
Я
6WRUDJH7HPSHUDWXUH 767* a

www.tw-gmc.com 1
SI2305
SI2302
SI2301

Я unless otherwise noted)


Electrical characteristics (Ta=25Я

Parameter Symbol Test Condition Min Typ Max Units


Static
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =10μA 20
V
Gate-threshold voltage VGS(th) VDS =VGS, ID =50μA 0. 0.95 1.2
Gate-body leakage IGSS VDS =0V, VGS =±8V ±100 nA
Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1 μA

a
2.8
VGS =4.5V, ID =A 0.0 0.0
Drain-source on-resistance rDS(on) Ÿ
VGS =2.5V, ID =.A 0.0 0.
a
Forward transconductance gfs VDS =5V, ID =3.6A 8 S
Diode forward voltage VSD IS=0.94A,VGS=0V 0.76 1.2 V
Dynamic
Total gate charge Qg 4
Gate-source charge Qgs VDS =10V,VGS =4.5V,ID =3.6A 0.65 nC
Gate-drain charge Qgd 1.5
b
Input capacitance Ciss 300
b
Output capacitance Coss VDS =10V,VGS =0V,f=1MHz 120 pF
b
Reverse transfer capacitance Crss 80
b
Switching
Turn-on delay time td(on) 7
VDD=10V,
Rise time tr 55
55
RL=5.5ȍ, ID §3.6A, ns
Turn-off delay time td(off) 16
16
VGEN=4.5V,Rg=6ȍ
Fall time tf 10
Notes :
a. Pulse Test : Pulse width”300μs, duty cycle ”2%.
b. These parameters have no way to verify.

www.tw-gmc.com 1
2
SI2305
SI2302
SI2301
7\SLFDO&KDUDFWHULVWLFV

Output Characteristics Transfer Characteristics


15 10
VGS=3.5V,3.0V,2.5V Ta=25ć Ta=25ć
Pulsed Pulsed
VGS=2.0V
12 8

(A)
(A)

ID
9 6
ID

DRAIN CURRENT
DRAIN CURRENT

6 4

VGS=1.5V

3 2

0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS


100 0.20
Ta=25ć Ta=25ć
Pulsed Pulsed

80 0.16
( :)
(m:)

RDS(ON)
RDS(ON)

60 0.12
ON-RESISTANCE

VGS=2.5V
ON-RESISTANCE

40 0.08
VGS=4.5V

ID=4.5A
20 0.04

0 0.00
0 5 10 15 20 25 30 0 2 4 6 8 10

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V)

www.tw-gmc.com 1
3
SI2305
SI2302
SI2301

3$&.$*(287/,1(

3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV 627

www.tw-gmc.com 1
4

You might also like