Addis Ababa Institute of Technology

School of Electrical and Computer Engineering

Course no. ECEG 2131 Course Title: Applied Electronics I

1. Identify two elementary and two compound semiconductor materials that are typically
used in microelectronic industries, and give at least one application for each of them.
2. Briefly state what the following symbols mean:
a. Na and Nd
b. ni, n and p
3. For a Si sample with Na= 1015 cm-3, find the concentration of donors that must be added in
order to reduce the hole concentration to 10%.
4. A Si sample at 300 K is uniformly doped with Nd= 1016 cm-3 donors. Calculate the
electron and hole concentrations, and determine the type of semiconductor (either n-type
or p-type), if the sample is later doped with
a. Na= 5 x 1016 cm-3
b. Na= 1016 cm-3
5. A sample of indium phosphide, InP, (In: column III, P: column V) contains 1017 cm-3
dopant atoms, which can be modeled as shallow donors.
a. If these dopant atoms are known to replace indium when they are incorporated
into the crystal lattice, what column of the periodic table must they come from?
b. What are the net electron and hole concentrations in this sample at thermal
equilibrium if the intrinsic carrier concentration, ni in InP is 107 cm-3 at room
temperature?
6. When Si atoms are added to a GaAs substrate, the silicon atom can replace either gallium
(3 valence electrons) or arsenic (5 valence electrons). Consider the following, if 1010 cm-3
of Si atoms are added to a GaAs sample and that 5% of Si atoms replace Ga and 95%
replace As,
a. Calculate the donor and acceptor concentrations in this GaAs sample
b. Find the electron and hole concentrations knowing that ni = 2.25 x 106 cm-3 for
GaAs at room temperature.
7. Hole concentration in a slab of silicon decreases linearly from 1015 cm-3 to 2 x 1014 cm-3
over a distance of 0.1 cm. If the cross-sectional area of the slab is 0.075 cm2 and the hole
diffusion coefficient is 10 cm2/s, determine the hole diffusion current.
8. Minority carriers are injected into a homogeneous n-type semiconductor sample at one
point. An electric field of 50 V/cm is applied across the sample, and the field moves these
 minority carriers a distance of 1 cm in 100 μs. Find the drift velocity and the diffusivity
of the minority carriers.
9. Find the resistivity of Silicon (Use: ni= 1.5 X 1010cm-3, μn = 1350 cm2/Vs, μp = 480
cm2/Vs, density of Si = 5 X 1022 atoms cm-3)
a. Intrinsic at 300k and
b. If a donor type impurity is added to the extent of 1 part in 108 Silicon atoms.
10. The electron concentration in a sample of n-type silicon varies linearly from 10 17 cm-3 at x
= 0 to 6 x 1016 cm-3 at x = 4 μm. There is no applied electric field and the electron current
density is experimentally measured to be –400 A/cm2. Calculate the electron diffusion
coefficient.
11. Consider a slab of uniformly doped Si with Nd = 2.5 x 1016 cm-3 as shown below

a. If a 1-V bias is applied across the slab, what are the associated electron and hole
velocities? Use μn = 1000 cm2/Vs and μp = 400 cm2/Vs
b. Compute the total current density, Jdrift
c. Calculate the resistivity of the slab
d. Determine the current passing through the slab due to the applied bias
12. The linear electron-concentration profile shown below has been established in a piece of
silicon. If n = 1017/cm3 and W = 1 μm, find the electron-current density in microamperes
per micron squared (μA/μm2). If a diffusion current of 1 mA is required, what must the
cross-sectional area (in a direction perpendicular to the page) be? (Use Dn = 35 cm2/s)