Modul 6 The Solid State
Modul 6 The Solid State
Modul 6 The Solid State
States of Matter
6
Notes
You are aware that the matter exists in three different states viz., solid, liquid and
gas. In these, the constituent particles (atoms, molecules or ions) are held together
by different forces of attraction between them. However, the nature and magnitude
of the forces varies. In the first two lessons of this module you have learnt about
the gaseous and the liquid states of matter. In this lesson you would learn about
solid state- a compact state of matter. The solids are distinguished from a liquid
or gas in terms of their rigidity which makes them occupy definite volume and
have a well defined shape. In solid state, the constituent particles are in close
contact and have strong forces of attraction between them. Here, you would
learn about structure, classification and properties of solids.
OBJECTIVES
After reading this lesson, you should be able to:
z explain the nature of solid state;
z explain the properties of solids in terms of packing of particles and intermo-
lecular attractions;
z differentiate between crystalline and amorphous solids;
z explain the melting point of a solid;
z classify the crystalline solids according to the forces operating between the
constituent particles;
z define the terms crystal lattice and unit cell;
z describe different types of two dimensional and three dimensional unit cells;
z explain different types of packing in the solids;
z define coordination number;
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z calculate the number of particles in simple cubic, face-centrad cubic and
body centered cubic unit cells;
z relate the density of a solid to the properties of its unit cell;
z calculate the packing efficiency of simple cubic body central cubic and CCP/
HCP lattices;
z define radius ratio;
Notes z correlate the radius ratio with the structure of solids;
z explain the structure of simple ionic compounds;
z explain Frenkel and Schottky defects;
z classify solids on the basis of their electrical and magnetic properties; and
z explain the effect of doping of semiconductors by electron deficit and electron
rich impurities.
In solid state the constituent particles are arranged in a closely packed ordered
arrangement Fig. 6.1 (c) with almost no free space. They can just vibrate about
their fixed positions. These are in close contact and cannot move around like the
molecules of a gas or a liquid. As a consequence, the solids are incompressible,
rigid and have a definite shape. Like liquids, the volume of a solid is independent
of the size or the shape of the container in which it is kept.
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6.2 CLASSIFICATION OF SOLIDS
On the basis of nature of arrangements of the constituent particles the solids
are classified into amorphous and crystalline solids.
The crystalline solids can be further classified on the basis of nature of interac-
tion between the constituent particles as discussed below.
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Table 6.1: Characteristics and properties of different types of solids.
Sodium chloride is an example of an ionic solid because in this case the sodium
ions and chloride ions are attracted to each other by electrostatic interactions.
Iodine on the other hand is an example of a molecular solid because in this the
molecules are held together by weak van der Waals forces. Diamond, with strong
covalent bonds between the constituent carbon atoms is an example of covalent
solids while in metals a large number of positive cores of the atoms are held
together by a sea of electrons.
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This fact was stated by Steno as the law of constancy of interfacial angles (Fig.
6.2).
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structure of the crystalline solids can be represented as an ordered three dimensional
arrangement of points. Here each point represents the location of a constituent
particle and is known as lattice point and such an arrangement is called a crystal
lattice or space lattice or simply a lattice.
b
y
a
(a) (b)
Fig. 6.3 (a) A two dimensional lattice (b) and its unit cell
a b a
y
90°
a a
a=b 90° a=b
y = 90° a y ¹ 90°
a¹b
y = 90°
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b
a
y 60°
a a
a¹b a=b Notes
y ¹ 90° y = 60°
(a) (b)
In a crystal lattice we can select a group of points which can be used to generate
the whole lattice. Such a group is called repeat unit or the unit cell of the crystal
lattice. The shaded region in the Fig. 6.5(a) represents a unit cell of the crystal
lattice. The unit cell is characterized by three distances along the three edges of
the lattice (a, b and c) and the angles between them (α, β and γ) as shown in the
Fig. 6.5(b). We can generate the whole crystal lattice by repeating the unit cell in
the three directions.
On the basis of the external appearance the known crystals can be classified into
seven types. These are called crystal systems. In terms of the internal structure
also the crystal lattices contain only seven types of unit cells. The seven crystal
systems and the definition of their unit cells in terms of their unit distances and
the angles are compiled in Table 6.2. The seven simple unit cells are given in Fig.
6.6.
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Table 6.2: The seven crystal systems and their possible lattice types.
The unit cell shown in Fig. 6.5 and the ones given in Fig..6.5 have the lattice
points at the corners only.
c
c
a
a 120o a
a b a
a
Cubic Orthorhombic Hexagonal
c
c c
a
b g b b a a
b a a
a a a
Fig. 6.6 : The primitive unit cells; the relative dimensions of the three repeat distances (a, b
and c) and the angles between them (a, β and γ) are given in Table 6.2.
Such unit cells are called primitive (P) unit cells. Sometimes, the unit cell of a
crystal contains lattice point(s) in addition to the ones at the corners. A unit cell
containing a lattice point each at the centers of its faces in addition to the lattice
points at the corners is called a face centered (F) unit cell. On the other hand a
unit cell with lattice points at the center of the unit cell and at the corners is
called a body centered unit cell (I). In some cases, in addition to the lattice
points at the corners there are two lattice points located at the centers of any two
opposite faces. These are called as end centered (C) unit cells. The possible
lattice types in different crystal systems are also indicated in Table 6.2. The seven
crystal systems when combined with these possibilities give rise to 14 lattice
types. These are called Bravais lattices.
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6.5 NUMBER OF ATOMS IN CUBIC UNIT CELLS
Of the seven crystal systems, let us discuss unit cells belonging to the cubic crys-
tal system in somewhat details. As you can see from Table 6.2 that in the cubic
crystal system the three repeat distances are equal and all the three angles are
right angles. The unit cells of three possible lattice types viz., primitive or simple
cubic, body centered cubic and the face centered cubic, belonging to cubic crys-
tal system are shown in Figure 6.7. Notes
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also at the center of the cube( Fig. 6.7 (b)). The atom in the center of the cube
belongs entirely to the unit cell, i.e., it is not shared by other unit cells. Each
corner atom, on the other hand, as in the case of simple cubic unit cell, is shared
by eight unit cells. Thus the number of atoms per unit cell can be calculated as
Number of corner atoms = 8
1
Notes Contribution of each corner atom =
8
1
∴ Contribution of all the corner atoms to the unit cell = 8 × =1
8
Number of atoms at the center of the cube = 1
Contribution to the unit cell = 1 ( as it is not shared)
The number of atoms in a body centered cubic unit cell = 1 + 1 = 2
(c) Face Centered Cubic Unit Cell
A face centered cubic ( fcc) unit cell has atoms not only at the corners but also at
the center of each face. Thus it has eight lattice points at the corners and six at
the face centers (Fig. 6.7 (c)). A face centered lattice point is shared by two unit
cells, as shown in Fig. 6.9.
Fig. 6.9: A face centered lattice point is shared by two unit cells
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The number of atoms per unit cell in different types of cubic unit cells is given in
Table 6.3.
Table. 6.3: Number of atoms per unit cell
Mass
Density =
Volume
(i) Volume of Unit cell
If the edge length of the cubic unit cell is ‘a’ its volume is a3
(ii) Mass of the Unit cell
Let the molar mass of substance = M
M
∴ Mass of one atom or molecule =
NA
z⋅M
=
NA
(iii) Density
Mass of one unit cell
Density =
Volume of one unit cell
z⋅M
d=
a3 ⋅ N A
Density of the unit of cell of a substance is the same as the density of the
substance. In case of ionic substances, the formula unit is taken as one particle.
(For example, formula unit of NaCl = 1Na+ + 1Cl– ions; of Na2SO4 = 2Na+
+ 1SO42– ions).
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The above relation can be used to calculate z and hence the nature of cubic lattice
if d and M are known or M if d and z are known
Example. The unit cell of a metallic element is face centred cubic and the side
of the cube is 540.2 pm. Calculate the density of the metal in gcm–3 if its relative
atomic mass is 202.4.
Notes Solution
z⋅M
d=
a3 ⋅ N A
Given:
Side of the cube = a = 540.2 pm = 540.2 × 10–10 cm
Number of atoms per unit cell of a face-centred cubic unit cell = z = 4
Molar mass of the element, M = 202.4 g mol–1
Putting these values in the above relation
4 × 202.4 g mol−1
d=
(540.2 × 10−10 cm)3 × (6.022 × 10−23 mol−1 )
= 8.53 g cm −3
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Notes
(a) (b)
Fig. 6.11 : (a) Square close packing and (b) hexagonal close packing of identical
spheres in two dimensions
In the other way we can place the spheres of the second row in the depressions
of the first row and so on and so forth (Fig. 6.11(b)). You may notice that
in such an arrangement each sphere is in contact with six other spheres. Such
an arrangement in two dimensions is called hexagonal close packing. In such
a packing, the spheres of the third row are aligned with the first row. You may
also have noticed that in the hexagonal close packed the spheres are more
efficiently packed. In Fig. 6.11 an equal number of identical spheres are arranged
in two different types of packing.
A three dimensional structure can be generated by placing such two dimensional
layers on top of each other. Before we move on to the three dimensional packing
let us look at the hexagonal close packed layer some what more closely (Fig.
6.12).
You may note from Fig. 6.12 that in a hexagonal close packed layer there are
some unoccupied spaces or voids. These are triangular in shape and are called
trigonal voids. You can further note that there are two types of triangular voids,
one with the apex pointing upwards and the other with the apex pointing down-
wards. Let us call these as X type and Y type voids respectively as marked in the
Fig. 6.12.
IIIrd row
IInd row
Ist row
Fig. 6.12 : A hexagonal Close Packed layer showing two types of triangular voids.
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1. In one, we can place the second layer in such a way that the spheres of the
second layer come exactly on top of the first layer.
2. In other, the spheres of the second layer are in such a way that these are on
the depressions of the first layer. The first possibility is similar to square
close packing discussed above and is accompanied by wastage of space. In
the second possibility when we place the second layer into the voids of the
Notes first layer, the spheres of the second layer can occupy either the X or Y type
trigonal voids but not both. You may verify this by using coins of same
denomination. You would observe that when you place a coin on the trigonal
void of a given type, the other type of void becomes unavailable for placing
the next coin (Fig. 6.13).
Fig. 6.13 : Two layers of close packed spheres , the second layer occupies only one
type (either X or Y ) of triangular voids in the first layer.
In this process, the sphere of second layer covers the trigonal voids of the first
layer. It results into voids with four spheres around it, as shown in Fig. 6.14(a).
Such a void is called a tetrahedral void since the four spheres surrounding it are
arranged on the corners of a regular tetrahedron, Fig. 6.14(b). Similarly, the trigonal
voids of the second layer will be placed over the spheres of the first layer and give
rise to tetrahedral voids.
(a) (b)
Fig. 6.14 : A tetrahedral void
In a yet another possibility, the trigonal voids of the first layer have another
trigonal void of the opposite type (X type over Y and Y type over X type) from
the second layer over it. This generates a void which is surrounded by six spheres,
Fig..6.15 (a). Such a void is called an octahedral void because the six spheres
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surrounding the void lie at the corners of a regular octahedron, Fig..6.15 (b).
Notes
(a) (b)
Fig. 6.15 : An octahedral void
A closer look at the second layer reveals that it has a series of regularly placed
tetrahedral and octahedral voids marked as ‘t’ and ‘o’ respectively in Fig. 6.16.
Fig. 6.16 : The top view of the second layer showing the tetrahedral
and octahedral voids.
Now, when we place the third layer over the second layer, again there are two
possibilities i.e., either the tetrahedral or the octahedral voids of the second layer
are occupied. Let us take these two possibilities. If the tetrahedral voids of the
second layer are occupied then the spheres in the third layer would be exactly on
top (i.e., vertically aligned) of the first or A layer The next layer ( 4th layer)
which is then placed would align with the B layer. In other words, every alternate
layer will be vertically aligned. This is called AB AB …. pattern or AB AB ….
repeat. On the other hand if the octahedral voids of the second layer are occu-
pied, the third layer is different from both the first as well as the second layer. It
is called the C layer. In this case the next layer, i.e., the fourth layer, howsoever
it is placed will be aligned with the first layer. This is called ABC ABC …. pattern
or ABC ABC.. …. repeat. In three dimensional set up the AB AB …. pattern or
repeat is called hexagonal closed packing ( hcp) (Fig. 6.10 (c) ) while the ABC
ABC …. pattern or repeat is called cubic closed packing (ccp) (Fig. 6.17 (a)).
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A Layer
A-Layer
C Layer A Layer
B-Layer
C Layer
Notes B Layer A-Layer
A Layer B Layer
A Layer
This process continues to generate the overall three dimensional packed struc-
ture. These three dimensional structures contain a large number of tetrahedral
and octahedral voids. In general there is one octahedral and two tetrahedral voids
per atom in the close packed structure. These voids are also called as interstices.
As mentioned earlier, the identical spheres represent the positions of only one
kind of atoms or ions in a crystal structure. Other kind of atoms or ions occupy
these interstices or voids.
In the close packed structures (hcp and ccp) discussed above, each sphere is in
contact with six spheres in its own layer ( as shown in Fig. 6.12) and is in contact
with three spheres each of the layer immediately above and immediately below it.
That is, each sphere is in contact with a total of twelve spheres. This number of
nearest neighbor is called its coordination number. The particles occupying the
interstices or the voids will have a coordination number depending on the nature
of the void. For example an ion in a tetrahedral void will be in contact with four
neighbors i.e., would have a coordination number of four. Similarly the atom or
ion in an octahedral void would have a coordination number of six.
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6.8 PACKING EFFICIENCY
In all closed packed structures there are always some voids or empty spaces.
The percentage of the total space that is filled by the constituent particles is
called the packing efficiency. It is calculated from the following relation:
filled space
Packing efficiency = × 100%
total space Notes
It depends upon the nature of crystal lattice. For the three types of cubic lattices,
the calculations are given below:
(1) Packing Efficiency of Simple Cubic Lattice
In simple cubic lattice, the constituent particles occupy only the corner positions
of the cubic unit cell. These particles touch one another along the edge of the
cube as shown in the Figure 6.18. Let a be the edge length of the cube and
r the radius of the particle then
a = 2r
C
B
H A
F
C
E D
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(2) Packing Efficiency of Body Centred Cubic Lattice
G
B
H A
c
Notes c
F b C
E a D
The body centred cubic unit cell has constitutent particles present at all its
corners as well as at its body centre. The particle at the body-centre touches
the particle at corner positions. Thus, the particles are in contact along the body-
diagonal of the cube. Consider the body-diagonal AF along which the contact
between the central particles with those at corners A and F has been shown in
Fig. 6.19.
∴ Length of body-diagonal AF = c = 4 r (6.1)
(Whole of the central particle (2r) and one-half of each of the two corner particle
(r + r) occupy the body-diagonal)
Length of the body-diagonal
In the triangle EFD on the face CDEF, EF ⊥ ED.
b 2 = a 2 + a 2 = 2a 2
Where a is the edge-length or side of the cube.
c 2 = a 2 + b 2 = a 2 + 2a 2 = 3a 2
∴ c = 3a (6.2)
But c = 4r
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4r
∴ a= (6.3)
3
4
∴ Volume of filled space = 2 × π r 3 (6.4)
3
Notes
3
⎛ 4r ⎞
Volume of the cubic unit cell = a3 = ⎜ ⎟ (6.5)
⎝ 3⎠
4
2 × π r3
filled space 3
Packing efficiency = × 100 = 3
×100
total space ⎛ 4r ⎞
⎜ ⎟
⎝ 3⎠
8 3
πr 3π
= 3 ×100 = × 100 = 68.0%
64 3 8
r
3 3
(3) Packing Efficiency of CCP and HCP Lattices
Cubic close packed or face centred cubic (FCC) and hexagonal close packed
lattices have equal packing efficiency. Packing efficiency of face centred cubic
(FCC) or cubic close packing (CCP) unit cell can be calculated with the help
of Figure 6.20. Let the edge length or the side of the cubic unit cell be a and
its face diagonal AC be b. In the triangle ABC, AB ⊥ BC, therefore,
F C
E D
Fig. 6.20: Face centred cubic or cubic close packing unit cell
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Unit cell of fcc (or ccp) lattice has constituent particles at all the corners and
at the centre of each face.
The particle of face-centre touches the particles occupying the corner positions
of the same face.
b = 4r = 2a
4r
or a= = 2 2r (6.8)
2
The number of constituent particles in a face centred cubic unit cell = 4
4
∴ The Volume of filled space = 4 × π r 3
3
4
4 × π r3
filled space 3
Packing efficiency = × 100 = ×100
total space (2 2r )3
16
π π
= 3 × 100 = = 74%
16 2 3 2
Packing efficiencies of the three types of cubic lattices are summarized in the
table 6.4.
Table 6.4: Packing efficiency of cubic unit cells
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6.9 STRUCTURES OF IONIC SOLIDS
In case of ionic solids that consist of ions of different sizes, we need to specify
the positions of both the cations as well as the anions in the crystal lattice. There-
fore, structure adopted by an ionic solid depends on the relative sizes of the two
ions. In fact it depends on the ratios of their radii (r+/r-) called radius ratio. Here
r+ is the radius of the cation and r- is that of the anion. The radius ratios and the
corresponding structures are compiled in Table 6.5. Notes
Table 6.5 : The radius ratios (r + /r–) and the corresponding structures
Radius ratio (r+/r–) Coordination number Structure adopted
The common ionic compounds have the general formulae as MX, MX2, and
MX3, where M represents the metal ion and X denotes the anion. We would
discuss the structures of some ionic compounds of MX and MX2 types.
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chloride ions at the corners and the face centers and the sodium ions at the edge
centers and in the middle of the cube (Fig. 6.22).
Notes
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Notes
Fig. 6.24 : Calcium fluoride or Fluorite structure; calcium ions occupy the corners of the
cube and face centers The F- ions are on the corners of the smaller cube which
dipict the positions of tetrahedral void.
Fig. 6.25: Antifluorite structure adopted by Na2O; The oxide ions occupy the corners
of the cube and face centers and the Na+ ions ( shown in black ) are on
the corners of the smaller cube.
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non-stoichiometric defects depending on whether or not these disturb the
stoichiometry of the crystalline material. Here, we would deal only with sto-
ichiometric defects. In such compounds the number of positive and negative
ions are in stoichiometric proportions. There are two kinds of stoichiometric
defects, these are
z Schottky defects
Notes z Frenkel defects
(a) Schottky defects : This type of defect are due to the absence of some
positive and negative ions from their positions. These unoccupied lattice sites
are called holes. Such defects are found in ionic compounds in which the
positive and negative ions are of similar size e.g., NaCl and CsCl. The num-
ber of missing positive and negative ions is equal. The presence of Schottky
defects decreases the density of the crystal [Fig. 6.26(a)].
(b) Frenkel defects : This type of defect arise when some ions move from
their lattice positions and occupy interstitial sites. The interstitial sites refer
to the positions in between the ions. When the ion leaves its lattice site a hole
is created there. ZnS and AgBr are examples of ionic compounds showing
Frenkel defects. In these ionic compounds the positive and negative ions are
of quite different sizes. Generally the positive ions leave their lattice posi-
tions, as these are smaller and can accommodate themselves in the interstitial
sites. The Frenkel defects do not change the density of the solids [Fig. 6.26(b)].
A– B– A– B– A– A– B– A– B– A–
A
– – – – – – – –
B A B B B A B B
A– A– B– A– A– B– A– B– A–
B
–
A
–
B
–
A
–
B
–
B
–
A– B
–
A– B
–
(a) (b)
These defects cause the crystal to conduct electricity to some extent. The
conduction is due to the movement of ions into the holes. When an ion moves
into a hole it creates a new hole, which in turn is occupied by another ion, and the
process continues.
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These are the solids with conductivities ranging from 104 to 107 S m–1. Metals
conduct electricity through movement of their electrons and are called electronic
conductors. Ionic solids conduct electricity when in molten state or dissolved
in water, through movement of their ions. They are called electrolytic conductors.
(ii) Insulators
These are the solids with extremely low conductivities ranging from 10–20 to
10–10 S m–1. Insulators are used to provide protective covering on conductors.
(iii) Semiconductors
These are the solids with intermediate conductivities ranging from 10–6 to 104
S m–1. Although semiconductors have low conductivities, they find vide
applications in solid state devices like diodes and transistors. Their conductivities
can be modified by introduction of a suitable impurity.
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In a piece of metal, the number of metal atoms is very large and so is the number
of their valence orbitals. This results in formation of an equally large number
of molecular orbitals which are so close to one-another that they form a
continuous band. The band in which the valence electrons are present is called
valence band. Electrons present in this band are strongly bound to the nucleus
and cannot conduct electricity. The band formed by vacant molecular orbitals
of higher energy is called conduction band. When electrons reach conduction
Notes band from valence band on excitation, they become loosely bound to the nucleus
and can conduct electricity by moving under the influence of an electric field.
Such electrons are also called free electrons. Conductivity of a solid depends
upon how easy or difficult it is for the valence electrons to jump to the
conduction band. See figure 6.27.
Conduction band
Empty
band
Empty
band
Forbidden band
(Large energy gap) Small energy gap
Emergy
Filled
band
Partially Overlapping
filled bands
band
Metal Insulator Semiconductor
(a) (b) (c)
Fig. 6.27: Valence and conduction bands in (a) metals, (b) insulators and
(c) semi conductors.
(i) In conductors either the valence band is only partially filled or it overlaps
a vacant conduction band of slightly higher energy. In both the cases its
electrons can easily flow under the influence of electric field and the solid
behaves as a conductor (Fig. 6.27(a))
(ii) In insulators the gap between the valence band and conduction band is
large. Due to this the valence electrons cannot jump to the conduction band
and conduct electricity (Fig. 6.27(b))
(iii) In semiconductors the gap between the valence band and nearest
conduction band is small (Fig. 6.27(c)). On applying the electric field, some
electrons can jump to the conduction band and provide low conductivity.
On increasing the temperature more electrons can jump to the conduction
band and the conductivity increases. Silicon and germanium show this type
of behaviour. They are called intrinsic semiconductors.
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6.11.3 Doping of Semiconductors
Conductivities of silicon and germanium are too low to be put to any practical
use. Their conductivities can be improved by introduction of controlled
quantities of impurities which are either electron-rich or electron-deficit with
respect to these elements. This process is known as doping.
(a) Doping with electron–rich impurities
Notes
Silicon and germanium both belong to group 14 of the periodic table and have
4 valence electrons each. In their crystal lattice each silicon (or germanium) atom
forms four covalent bonds with its neighbours (Fig. 6.23(a)) when it is doped
with a group 15 element like As or P, whose each atom carries 5 valence electrons
which is one more than Si. After sharing its four electrons with four neighbouring
Si atoms, it has 9 electrons in its valence shell (Fig. 6.28(b)) which is highly
unstable electronic configuration. The ninth electron being highly unstable roams
freely in the whole of the crystal lattice randomly. In the presence of an electric
field this electron (mobile electron) moves from negative to positive terminal and
increases the conductivity of Si (or Ge). Since the increased conductivity of Si
(or Ge) is due to negatively charged mobile electrons, the Si doped with electron
rich impurity becomes a n-type semiconductor.
Positive hole
Silicon atom Mobile electron (no electron)
: : : : : : : : : : : :
:
: : : : : : As : : : : B : :
:
: : : : : : : : : : : :
:
: : : : : : : : : : : :
:
(b) Doping with electron-deficit impurities. When Si (or Ge) is doped with
a group 13 element like B or Al containing 3 valence electrons (1 electron less
than Si/Ge), this results in creation of one-electron vacancy in the structure
which is called an electron hole (Fig. 6.28(c)). An electron from its neightbouring
atom can come and occupy it, leaving a hole at its original position. Electrons
can randomly occupy holes and the hole would appear to move randomly. On
applying an electric field, the electrons move from negative to positive terminal
and the hole would appear move in the opposite direction, i.e., from positive
to negative terminal and would behave as if it is positively charged. Such
semiconductors are called p-type semiconductors. The movement of electrons
and the hole increases the conductivity of Si. Semiconductors like Si, doped
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with electron-deficit or electron-rich impurities are called extrinsic
semiconductors.
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6.12.2 Diamagnetic Substances
When placed in a magnetic field, diamagnetic substances are weakly repelled
by it. H2O, NaCl and C6H6 are some examples of such substances. Diamagnetism
is shown by substances in which all the electrons are paired.
(a)
(b)
(c)
Fig. 6.29 Arrangement of magnetic moments of domains in (a) ferromagnetic, (b) anti
ferromagnetic and (c) ferrimagnetic substances
placed in a magnetic field, all the domains get oriented in the direction of the
magnetic field. This adds up their magnetic moments and makes them strong
magnets (Fig. 6.29(a)). They lose their ferromagnetism on being given mechanical
jerks or on heating above a certain temperature, called Curie temperature they
become paramagnetic.
CHEMISTRY 203
MODULE - 3 The Solid State
States of Matter
of ferromagnetic and antiferromagnetic substances. These substances are quite
strongly attracted by magnetic field as compared to paramagnetic substances
but weakly as compared to ferromagnetic substances. Their domains are aligned
in parallel and antiparallel directions in unequal numbers (Fig. 6.29(c)). They
also become paramagnetic on heating above a certain temperature.
Notes
WHAT YOU HAVE LEARNT
z In solid state the constituent particles are arranged in a closely packed or-
dered arrangement with almost no free space. These are held together by
strong forces of attraction and vibrate about their fixed positions. Solids are
incompressible and rigid and have definite shapes.
z Solids are classified into amorphous and crystalline solids. The crystalline
solids have long range order while amorphous solids have only short range
order.
z The crystalline solids can be classified into four different types- ionic, mo-
lecular, covalent and metallic solids on the basis of nature of forces of
attraction between the constituent particles.
z The temperature at which a solid melts to give a liquid is called its melting
point.
z The three dimensional internal structure of a crystalline solid can be repre-
sented in terms of a crystal lattice in which the location of each constituent
particle is indicated by a point.
z The whole crystal lattice can be generated by moving the unit cell in the
three directions.
z The crystal structures of the solids can be described in terms of a close-
packing of identical spheres.
z In three dimensions there are two ways of packing identical spheres. These
are hexagonal closed packing (hcp) and cubic closed packing (ccp). The hcp
arrangement is obtained by ABAB repeat of the two dimensional layers
whereas the ccp arrangement is obtained by ABCABC repeat.
z On the basis of the external appearance the known crystals can be classified
into seven types called crystal systems.
z The unit cells of cubic crystal system has three possible lattice types. These
are simple cubic, body centered cubic and the face centered cubic.
z The atoms at the corner of a cubic unit cell is shared by eight unit cells while
a face centered atom is shared by two unit cells. The atom at the body center,
on the other hand is exclusive to the unit cell as it is not shared.
204 CHEMISTRY
The Solid State MODULE - 3
States of Matter
z The number of atoms per unit cell for the simple cubic, bcc and fcc unit cells
are 1,2 and 4 respectively.
z The structure adopted by an ionic solid depends on the ratios of their radii
(r+/r-), called radius ratio.
z The structures of some simple ionic solids can be described in terms of ccp
of one type of ions and the other ions occupying the voids.
z Actual crystals have some kind of imperfections in their internal structure. Notes
These are called defects.
z There are two types of defects called stoichiometric and non-stoichiometric
defects depending on whether or not these disturb the stoichiometry of the
crystalline material.
z There are two kinds of stoichiometric defects, these are called Schottky
defects and Frenkel defects.
z Solid can be classified as conductors, insulators and semiconductors on the
basis of their electrical conductivities.
z Electrical properties of solids can be explained with the help of band theory.
z On the basis of their interaction with external magnetic field, solids can be
classified as paramagnetic, diamagnetic, ferromagnetic, ferrimagnetic and
antiferromagnetic substances.
TERMINAL EXERCISES
1. Outline the differences between a crystalline and an amorphous solid.
2. How can you classify solids on the basis of the nature of the forces between
the constituent particles?
3. What do you understand by the melting point of a solid ? What information
does it provide about the nature of interaction between the constituent particles
of the solids?
4. What do you understand by coordination number? What would be the coor-
dination number of an ion occupying an octahedral void.?
5. Explain the following with the help of suitable examples.
(a) Schottky defect
(b) Frankel defect
6. Explain why a particular solid behaves as conductor or semiconductor or
insulator on the basis of band theory.
7. What are (i) paramagnetic (ii) diamagnetic and (iii) ferromagnetic substances?
CHEMISTRY 205