Data Sheet

2SK2225
R07DS1358EJ0300
1500V - 2A - MOS FET Rev.3.00
High Speed Power Switching Aug 02, 2016

Application
High speed power switching

Features
 High breakdown voltage (VDSS = 1500 V)
 High speed switching
 Low drive current
 No Secondary breakdown
 Suitable for switching regulator, DC-DC converter

Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D

G 1. Gate
2. Drain
3. Source

1
2
3

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 1500 V
Gate to source voltage VGSS 20 V
Drain current ID 2 A
Drain peak current ID(pulse)*1 7 A
Body to drain diode reverse drain current IDR 2 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW  10 s, duty cycle  1 %
2. Value at Tc = 25°C

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Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — 1 A VGS = 20 V, VDS = 0
Zero gate voltage drain current IDSS — — 500 A VDS =1200 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 9 12  ID = 1 A, VGS = 15 V*3
resistance
Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A, VDS = 20 V*3
Input capacitance Ciss — 990 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 125 — pF f = 1 MHz
Reverse transfer capacitance Crss — 60 — pF
Turn-on delay time td(on) — 17 — ns ID = 1 A, VGS = 10 V,
Rise time tr — 50 — ns RL = 30 
Turn-off delay time td(off) — 150 — ns
Fall time tf — 50 — ns
Body to drain diode forward voltage VDF — 0.9 — V IF = 2 A, VGS = 0
Body to drain diode reverse trr — 1750 — ns IF = 2 A, VGS = 0,
recovery time diF / dt = 100 A / s
Note: 3. Pulse Test

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Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area

80 10
10
μs
Channel Dissipation Pch (W)

10
PW

0
1

Drain Current ID (A)

60

μs
= m
1 10 s

D
m

C
s

O
(1

pe
40 0.3 sh

r
ot

at
)

io
n
(T
0.1 Operation in

c
this area is

=
25
20 limited by RDS(on)

°C
)
0.03
Ta = 25°C
0.01
0 50 100 150 200 10 30 100 300 1000 3000 10000

Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

5 2.0
15 V
10 V 8V
Pulse Test VDS = 25 V
4 1.6
Drain Current ID (A)
Drain Current ID (A)

Pulse Test
7V
3 1.2

6V
2 0.8
Tc = 75°C
5V 25°C
1 0.4 –25°C
VGS = 4 V

0 20 40 60 80 100 0 2 4 6 8 10

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage Static Drain to Source on State

Drain to Source Saturation Voltage VDS (on) (V)

vs. Gate to Source Voltage Resistance vs. Drain Current

RDS (on) (Ω)
Static Drain to Source on State Resistance

50 50
Pulse Test

40 20 VGS = 10 V
ID = 3 A
10 15 V
30
5
2A
20
2
1A Pulse Test
10
1
0.5 A

0.5
0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 10

Gate to Source Voltage VGS (V) Drain Current ID (A)

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Static Drain to Source on State Forward Transfer Admittance

Resistance vs. Temperature vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)

Forward Transfer Admittance ⏐yfs⏐ (S)

20 10

ID = 2 A 5 VDS = 25 V
16 Pulse Test

2
12 Tc = –25°C
0.5 A, 1 A 25°C
1 75°C
8 0.5

4 VGS = 15 V
0.2
Pulse Test
0 0.1
–40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 5

Case Temperature TC (°C) Drain Current ID (A)

Body to Drain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
5000 10000
Reverse Recovery Time trr (ns)

VGS = 0
f = 1 MHz
2000
Capacitance C (pF)

Ciss
1000 1000

500

di / dt = 100 A / μs, Ta = 25°C

100 Coss
200 VGS = 0, Pulse Test
Crss
100

50 10
0.05 0.1 0.2 0.5 1 2 5 0 10 20 30 40 50

Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V)

Dynamic Input Characteristics Switching Characteristics

1000 20 1000
Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

VGS = 10 V
VDD = 250 V 500 PW = 2 μs
800 400 V 16
Switching Time t (ns)

duty < 1 %
600 V VGS td(off)
VDS 200
600 12
100
tf
400 8
50
tr
VDD = 250 V
200
400 V 4 td(on)
ID = 2.5 A 20
600 V
0 10
0 20 40 60 80 100 0.05 0.1 0.2 0.5 1 2 5

Gate Charge Qg (nc) Drain Current ID (A)

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2SK2225

Reverse Drain Current vs.

Source to Drain Voltage

Reverse Drain Current IDR (A)

Pulse Test
4

1
10 V, 15 V
VGS = 0, –5 V
0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γS (t)

Tc = 25°C
D=1
1

0.5

0.3
0.2

0.1 θ ch – c(t) = γ s (t) • θ ch – c

0.1
θ ch – c = 2.50°C/W, Tc = 25°C
0.05

PW
0.02 PDM D=
T
0.03
0.01 e
puls PW
ot T
1 sh
0.01
10 μ 100 μ 1m 10 m 100 m 1 10
Pulse Width PW (s)

Switching Time Test Circuit Waveforms

Vout 90%
Vin Monitor
Monitor
D.U.T. 10%
Vin
RL
Vout 10% 10%
Vin VDD
50 Ω = 30 V
10 V 90% 90%

td(on) tr td(off) tf

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Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
TO-3PFM SC-93 PRSS0003ZA-A TO-3PFM / TO-3PFMV 5.2g Unit: mm

5.0 ± 0.3
15.6 ± 0.3 5.5 ± 0.3

φ3.2 + 0.4
– 0.2

19.9 ± 0.3
2.0 ± 0.3

2.7 ± 0.3
5.0 ± 0.3
3.2 ± 0.3
4.0 ± 0.3
2.6 1.6

21.0 ± 0.5
0.86 0.86

+ 0.2
0.66 – 0.1 0.9 +– 0.1
0.2

5.45 ± 0.5 5.45 ± 0.5

Ordering Information
Orderable Part No. Quantity Shipping Container
2SK2225-E 360 pcs Box (Tube)

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Aug 02, 2016
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