FET

Field-Effect Transistor
• The idea for a field-effect
transistor (FET) was first
proposed by Julius
Lilienfeld, a physicist and
inventor.

• In 1930 he was granted a

U.S. patent for the device.
Field-Effect Transistor
• BJT is a current-controlled device while FET is a
voltage-controlled device.

• A major advantage of FETs is their very high input

resistance.

• FETs are the preferred device in low-voltage switching

applications because they are generally faster than
BJTs when turned on and off.
The JFET
JFET
• The JFET (Junction Field Effect Transistor) is a
normally ON device.

• It is a type of FET that operates with a reverse-biased

pn junction to control current in a channel.

• JFETs fall into either of two categories:

• n channel
• p channel
Basic Structure
Basic Operation
JFET Symbols
JFET
• There are two types of RD
JFETs: n-channel and p-
channel. +
VDD
• The dc voltages are –
–
opposite polarities for VGG
each type. +
JFET Characteristic and
Parameters
Drain Characteristic Curve
Drain Characteristic Curve
ID

IDSS VGS = 0

VGS = –1 V

VGS = –2 V

VGS = –3 V
VGS = – 4 V
VGS = VGS(of f) = –5 V
VDS
VP = +5 V
JFET Transfer Characteristic
The transfer curve is based
on the equation:

2
𝑉GS
𝐼D = 𝐼DSS 1 −
𝑉GS(off)
JFET
• The transconductance is the ratio of a change in
output current (∆ID) to a change in the input voltage
(∆VGS).
Δ𝐼D
𝑔𝑚 =
Δ𝑉GS

𝑉GS
𝑔𝑚 = 𝑔m0 1 −
𝑉GS(off)

2𝐼DSS
𝑔𝑚0 =
𝑉GS(off)
JFET
The input resistance of a JFET is given by:
𝑉GS
𝑅𝐼𝑁 =
𝐼GSS

where IGSS is the current into the reverse biased gate.

JFETs have very high input resistance, but it drops when

the temperature increases.
JFET Biasing
JFET Biasing Techniques
• The JFET can be biased in the ohmic or in the active
region.

• When biased in the ohmic region, the JFET is

equivalent to a resistance.

• When biased in the active region, the JFET is

equivalent to a current source.
Gate Bias
A negative gate voltage of -VGG is
applied to the gate through biasing
resistor RG. This sets up a drain
current that is less than IDSS.

Gate bias is the worst way to bias a

JFET in the active region because the
Q point is too unstable.
 Sample Problem
Determine VGSQ, IDQ, VDS, VD, VG, VS.
Self Bias
Self-bias is the most common type of
JFET bias.
Voltage-Divider Bias
The voltage divider produces a gate
voltage that is a fraction of the supply
voltage.
Sample Problem
Determine ID and VGS for the JFET
with voltage-divider bias in the
figure, given that for this
particular JFET the parameter
values are such that VD ≈ 7 V.
The MOSFET
MOSFET
• Metal Oxide Semiconductor Field-Effect Transistor

• Unlike JFET, has no pn junction structure.

• Instead, the gate of the MOSFET is insulated from the

channel by a SiO2 layer.

• Two basic types: E-MOSFET and D-MOSFET

MOSFET
• Because polycrystalline silicon is now used for the
gate material instead of metal, these devices are
sometimes called IGFETs (insulated-gate FETs).
E-MOSFET
• Enhancement MOSFET

• It operates only in the enhancement mode and has no

depletion mode.

• It has no structural channel.

 E-MOSFET
Construction

Source: Electronic Devices by Floyd

E-MOSFET
Operation

Source: Electronic Devices by Floyd

E-MOSFET Schematic Symbols

Source: Electronic Devices by Floyd

D-MOSFET
• Depletion MOSFET

• It operates in either of two modes: the depletion mode

or the enhancement mode.

• Sometimes called a depletion/enhancement MOSFET.

• n-channel MOSFET: −𝑽𝑮𝑺 = 𝐝𝐞𝐩𝐥𝐞𝐭𝐢𝐨𝐧 𝐦𝐨𝐝𝐞

+𝑽𝑮𝑺 = 𝐞𝐧𝐡𝐚𝐧𝐜𝐞𝐦𝐞𝐧𝐭 𝐦𝐨𝐝𝐞
D-MOSFET Construction

Source: Electronic Devices by Floyd

D-MOSFET Operation

Source: Electronic Devices by Floyd

D-MOSFET Schematic Symbols

Source: Electronic Devices by Floyd

MOSFET Characteristic
and Parameters
E-MOSFET Transfer Characteristics
• E-MOSFET uses only channel enhancement.

• An n-channel device requires a positive gate-to-

source voltage.

• A p-channel device requires a negative gate-to-source

voltage.
E-MOSFET Transfer Characteristics

Source: Electronic Devices by Floyd

E-MOSFET Transfer Characteristics
• The equation for the E-MOSFET transfer characteristic
curve is

𝟐
𝑰𝑫 = 𝑲 𝑽𝑮𝑺 − 𝑽𝑮𝑺(𝒕𝒉)

• The constant K depends on the particular MOSFET

and can be determined from the datasheet.
Sample Problem
The datasheet for a 2N7002 E-MOSFET gives 𝑰𝑫(𝒐𝒏) =
𝟓𝟎𝟎 𝐦𝐀 (minimum) at 𝑽𝑮𝑺 = 𝟏𝟎 𝐕 and 𝑽𝑮𝑺(𝒕𝒉) = 𝟏 𝐕 .
Determine the drain current for 𝑽𝑮𝑺 = 𝟓 𝐕 .

Answer: 98.7654 mA
D-MOSFET Transfer Characteristics
• D-MOSFET can operate with either positive or
negative gate voltages.

• The square-law expression for the JFET curve also

applies to the D-MOSFET curve.

𝟐
𝑽𝑮𝑺
𝑰𝑫 ≅ 𝑰𝑫𝑺𝑺 𝟏 −
𝑽𝑮𝑺 𝒐𝒇𝒇
D-MOSFET Transfer Characteristics

Source: Electronic Devices by Floyd

Sample Problem
For a certain D-MOSFET, 𝑰𝑫𝑺𝑺 = 𝟏𝟎 𝐦𝐀 and 𝑽𝑮𝑺(𝒐𝒇𝒇) =
− 𝟖 𝐕.
(a) Is this an n-channel or a p-channel?
(b)Calculate 𝑰𝑫 at 𝑽𝑮𝑺 = −𝟑𝑽.
(c) Calculate 𝑰𝑫 at 𝑽𝑮𝑺 = +𝟑𝑽.

Answers: (a) n-channel, (b) 3.9063 mA, (c) 18.9063 mA

Handling Precautions
• All MOS devices are subject to damage from
electrostatic discharge (ESD).

• Because the gate of a MOSFET is insulated from the

channel, the input resistance is extremely high (ideally
infinite).

• 𝑰𝑮𝑺𝑺 (gate leakage current) for a MOSFET is in the pA

range while the gate reverse current for a JFET is in
the nA range.
Handling Precautions
• The input capacitance results from the insulated gate
structure.

• Excess static charge can be accumulated because the

input capacitance combines with the very high input
resistance and can result in damage to the device.

• To avoid damage from ESD, certain precautions

should be taken when handling MOSFETs:
Handling Precautions
1. Carefully remove MOSFET devices from their
packaging.

2. All instruments and metal benches used in assembly

or test should be connected to earth ground.

3. The handler’s wrist should be connected to a

commercial grounding strap, which has a high-value
series resistor for safety.
Handling Precautions
4. Never remove a MOS device from the circuit while the
power is on.

5. Do not apply signals to a MOS device while the dc

power supply is off.
MOSFET Biasing
E-MOSFET Bias
• Because E-MOSFETs must have a 𝑽𝑮𝑺 greater than the
threshold value, 𝑽𝑮𝑺(𝒕𝒉) , zero bias cannot be used.

• In either the voltage-divider or drain-feedback bias

arrangement, the purpose is to make the gate voltage
more positive than the source by an amount
exceeding 𝑽𝑮𝑺(𝒕𝒉) .
E-MOSFET Bias
In voltage-divider bias,
𝑹𝟐
𝑽𝑮𝑺 = 𝑽𝑫𝑫
𝑹𝟏 + 𝑹𝟐

𝑽𝑫𝑺 = 𝑽𝑫𝑫 − 𝑰𝑫 𝑹𝑫

𝟐
𝑰𝑫 = 𝑲 𝑽𝑮𝑺 − 𝑽𝑮𝑺(𝒕𝒉)
Source: Electronic Devices by Floyd
E-MOSFET Bias
In the drain-feedback bias,
there is negligible gate current
and, therefore, no voltage drop
across 𝑹𝑮 .
𝑽𝑮𝑺 = 𝑽𝑫𝑺

Source: Electronic Devices by Floyd

Sample Problem
Determine 𝑽𝑮𝑺 and 𝑽𝑫𝑺 for the E-MOSFET
circuit. Assume this MOSFET has
minimum values of 𝑰𝑫(𝒐𝒏) = 𝟐𝟎𝟎 𝐦𝐀 at
𝑽𝑮𝑺 = 𝟒𝑽 and 𝑽𝑮𝑺(𝒕𝒉) = 𝟐 𝐕.

Answers: 𝑽𝑮𝑺 = 𝟑. 𝟏𝟑𝟎𝟒 𝐕, 𝑽𝑫𝑺 =

𝟏𝟏. 𝟐𝟐𝟏𝟐 𝐕
Source: Electronic Devices by Floyd
Sample Problem
Determine the amount of drain current in the shown
circuit. The MOSFET has a 𝑽𝑮𝑺(𝒕𝒉) = 𝟑 𝐕.

Answers: 𝟏. 𝟑𝟖𝟑𝟎 𝐦𝐀
Source: Electronic Devices by Floyd
D-MOSFET Bias
• D-MOSFETs can be operated with either positive or
negative values of 𝑽𝑮𝑺 .

• A simple bias method is to set 𝑽𝑮𝑺 = 𝟎 so that an AC

signal at the gate varies the gate-to-source voltage
above and below this 0 V bias point.
D-MOSFET Bias
Since 𝑽𝑮𝑺 = 𝟎, 𝑰𝑫 = 𝑰𝑫𝑺𝑺 ,
as indicated. The drain-
to-source voltage is
expressed as follows:

𝑽𝑫𝑺 = 𝑽𝑫𝑫 − 𝑰𝑫𝑺𝑺 𝑹𝑫

Source: Electronic Devices by Floyd

Sample Problem
Determine the drain-to-source voltage in
the circuit shown. The MOSFET
datasheet gives 𝑽𝑮𝑺(𝒐𝒇𝒇) = −𝟖𝑽 and
𝑰𝑫𝑺𝑺 = 𝟏𝟐 𝐦𝐀.

Answers: 𝟏𝟎. 𝟓𝟔 𝐕 Source: Electronic Devices by Floyd

IGBT
IGBT
• Insulated-Gate Bipolar Transistor

• A device that has the output conduction

characteristics of a BJT but is voltage controlled like a
MOSFET.

• It combines features from both the MOSFET and the

BJT that make it useful in high-voltage and high-
current switching applications.
IGBT
• Has three terminals: gate,
collector, and emitter.

• Similar to the BJT symbol

except there is an extra
bar representing the gate
structure of a MOSFET
rather than a base.

Source: Electronic Devices by Floyd

IGBT Comparison
IGBT Operation
• The IGBT is controlled by the gate voltage just like a
MOSFET.

• An IGBT can be thought of as a voltage-controlled

BJT, but with faster switching speeds.

• The IGBT has essentially no input current and does

not load the driving source.
IGBT Operation
• When the gate voltage with
respect to the emitter is less
than a threshold voltage, the
device is turned off.

• The device is turned on by

increasing the gate voltage
to a value exceeding the
threshold voltage.
Source: Electronic Devices by Floyd
IGBT Operation
• If the maximum collector
current is exceeded under
certain conditions, Qp can
turn on.

• If Qp turns on, it effectively

combines with Q1 to form
a parasitic element, in
which a latch-up condition
can occur. Source: Electronic Devices by Floyd
References:
• A. Malvino and D. Bates, Electronic Principles, New York: McGraw-
Hill Education, 2016.
• A. Agarwal and J. Lang, Foundations of Analog and Digital
Electronic Circuits, San Francisco: Elsevier Inc, 2005.
• M. E. Schultz, Grob's Basic Electronics, New York: McGraw-Hill
Education, 2011.
• S. Gibilisco, Teach Yourself Electricity and Electronics, New York:
McGraw-Hill Companies, 2002.
• T. L. Floyd, Electronic Devices (Conventional Current Version), New
Jersey: Prentice Hall, 2012.
• R. Boylestad and L. Nashelsky, Electronic Devices and Circuit
Theory, New Jersey: Pearson Education, Inc., 2013.