STF43N60DM2

Datasheet

N-channel 600 V, 0.085 Ω typ., 34 A MDmesh DM2

Power MOSFET in a TO-220FP package

Features
Order code VDS @ TJ max. RDS(on) max. ID PTOT

STF43N60DM2 650 V 0.093 Ω 34 A 40 W

• Fast-recovery body diode

3 • Extremely low gate charge and input capacitance
2
1
• Low on-resistance
TO-220FP • 100% avalanche tested
• Extremely high dv/dt ruggedness
D(2)
• Zener-protected

Applications
G(1)
• Switching applications

Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-
S(3) AM15572v1_no_tab recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status links

STF43N60DM2

Product summary

Order code STF43N60DM2

Marking 43N60DM2
Package TO-220FP
Packing Tube

DS10532 - Rev 3 - August 2019 www.st.com

For further information contact your local STMicroelectronics sales office.
 STF43N60DM2
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±25 V

Drain current (continuous) at Tcase = 25 °C 34

ID (1)
Drain current (continuous) at Tcase= 100 °C 21 A

IDM (2)
Drain current (pulsed) 136

PTOT Total power dissipation at Tcase = 25 °C 40 W

dv/dt (3) Peak diode recovery voltage slope 50

V/ns
dv/dt (4) MOSFET dv/dt ruggedness 50

Insulation withstand voltage (RMS) from all three leads to external heat
VISO 2.5 kV
sink (t = 1 s; TC = 25 °C)

Tstg Storage temperature range °C

–55 to 150
Tj Operating junction temperature range °C

1. Limited by maximum junction temperature.

2. Pulse width is limited by safe operating area.
3. ISD ≤ 34, di/dt ≤ 900 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
4. VDS ≤ 480 V

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 3.13

°C/W
Rthj-amb Thermal resistance junction-ambient 62.5

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive

IAR 6 A
(pulse width limited by Tjmax)

Single pulse avalanche energy

EAR 800 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

DS10532 - Rev 3 page 2/12

 STF43N60DM2
Electrical characteristics

2 Electrical characteristics

(Tcase= 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS VGS = 0 V, ID = 1 mA 600 V
voltage
VGS = 0 V, VDS = 600 V 1 µA

IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V,

100 µA
Tcase = 125 °C (1)

IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source on-

RDS(on) VGS = 10 V, ID = 17 A 0.085 0.093 Ω
resistance

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 2500 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 120 - pF

Crss Reverse transfer capacitance - 3 - pF

Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, f = 1 MHz, VGS = 0 V - 200 - pF

RG Intrinsic gate resistance f = 1 MHz, ID=0 A - 4 - Ω

Qg Total gate charge - 56 - nC

VDD = 480 V, ID = 34 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 14. Test circuit for gate - 13 - nC
charge behavior)
Qgd Gate-drain charge - 30 - nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 29 - ns

VDD = 300 V, ID = 25 A, RG = 4.7 Ω,
tr Rise time - 27 - ns
VGS = 10 V (see Figure 13. Test circuit
td(off) Turn-off delay time for resistive load switching times and - 85 - ns
Figure 18. Switching time waveform)
tf Fall time - 6 - ns

DS10532 - Rev 3 page 3/12

 STF43N60DM2
Electrical characteristics

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD (1) Source-drain current - 34 A

ISDM (2)
Source-drain current (pulsed) - 136 A

VSD (3) Forward on voltage VGS = 0 V, ISD = 34 A - 1.6 V

trr Reverse recovery time - 120 ns

ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V
Qrr Reverse recovery charge (see Figure 15. Test circuit for inductive - 0.6 μC
load switching and diode recovery times)
IRRM Reverse recovery current - 10.4 A

trr Reverse recovery time ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, - 240 ns
Tj = 150 °C (see Figure 15. Test circuit
Qrr Reverse recovery charge - 2.4 μC
for inductive load switching and diode
IRRM Reverse recovery current recovery times) - 20.5 A

1. Limited by maximum junction temperature.

2. Pulse width is limited by safe operating area.
3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

DS10532 - Rev 3 page 4/12

 STF43N60DM2
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

ID GIPG120615FQ6LFSOA GC20521
K
(A) δ=0.5

0.2
10 2 is 0.1
ea
ar (on) 10-1
is S 10 μs
th R D
in x. 0.05
io n a 100 μs
10 1 at by m 0.02
er
Op ited 1 ms 0.01
lim 10 ms 10-2
Zth= K*R thJ-c
10 0 Single pulse
δ =t p/Ƭ

T j ≤ 150 °C
T c = 25 °C tp

10 -1 single pulse 10-3 Ƭ

10 -1 10 0 10 1 10 2 V DS (V) 10-4 10-3 10-2 10-1 10-0 tp(s)

Figure 3. Output characteristics Figure 4. Transfer characteristics

ID GIPG120615FQ6LPOCH ID GIPG120615FQ6LPTCH
(A) (A)
V GS = 9, 10 V V DS = 15 V
100 100

V GS = 8 V
80 80

60 60
V GS = 7 V

40 40

20 20
V GS = 6 V

0 0
0 4 8 12 16 V DS (V) 3 4 5 6 7 8 9 V GS (V)

Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

V GS GIPG120615FQ6LFQVG V DS R DS(on) GIPG120615FQ6LFRID
(V) (V) (Ω)
V DD = 480 V V GS = 10 V
12 600 0.096
I D = 34 A
V DS
10 500
0.092
8 400
0.088
6 300
0.084
4 200

2 100 0.080

0 0 0.076
0 10 20 30 40 50 60 Q g (nC) 0 5 10 15 20 25 30 I D (A)

DS10532 - Rev 3 page 5/12

 STF43N60DM2
Electrical characteristics (curves)

Figure 8. Normalized gate threshold voltage vs

Figure 7. Capacitance variations
temperature
C GIPG120615FQ6LFCVR
(pF) V GS(th) GIPG120615FQ6LPVTH
(norm.)
I D = 250 µA
10 4 1.1
C ISS
10 3 1.0

0.9
10 2 C OSS
0.8
10 1 C RSS
f = 1 MHz
0.7

10 0
10 -1 10 0 10 1 10 2 V DS (V) 0.6
-75 -25 25 75 125 T j (°C)

Figure 9. Normalized on-resistance vs temperature Figure 10. Normalized V(BR)DSS vs temperature

R DS(on) GIPG120615FQ6LPRON V (BR)DSS GIPG120615FQ6LPBDV
(norm.) (norm.)
I D = 1 mA
2.2 1.08
V GS = 10 V

1.8 1.04

1.4 1.00

1.0 0.96

0.6 0.92

0.2 0.88
-75 -25 25 75 125 T j (°C) -75 -25 25 75 125 T j (°C)

Figure 11. Output capacitance stored energy Figure 12. Source- drain diode forward characteristics
E OSS GIPG120615FQ6LPEOS V SD GIPG120615FQ6LPSDF
(µJ) (V)
1.1
16 T j = -50 °C
1.0

12
0.9
T j = 25 °C
0.8
8

0.7
4 T j = 150 °C
0.6

0 0.5
0 100 200 300 400 500 600 V DS (V) 0 4 8 12 16 20 24 28 32 I SD (A)

DS10532 - Rev 3 page 6/12

 STF43N60DM2
Test circuits

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load switching and

Figure 16. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 18. Switching time waveform

Figure 17. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD VGS 90%

0 10%
AM01472v1
AM01473v1

DS10532 - Rev 3 page 7/12

 STF43N60DM2
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP package information

Figure 19. TO-220FP package outline

7012510_Rev_13_B

DS10532 - Rev 3 page 8/12

 STF43N60DM2
TO-220FP package information

Table 8. TO-220FP package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
E 0.45 0.70
F 0.75 1.00
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.20
G1 2.40 2.70
H 10.00 10.40
L2 16.00
L3 28.60 30.60
L4 9.80 10.60
L5 2.90 3.60
L6 15.90 16.40
L7 9.00 9.30
Dia 3.00 3.20

DS10532 - Rev 3 page 9/12

 STF43N60DM2

Revision history

Table 9. Document revision history

Date Revision Changes

06-Aug-2014 1 First release.

Text and formatting changes throughout document
Datasheet promoted from preliminary data to production data
On cover page:
- updated title description
- updated features table
In Section Electrical ratings:
- updated Table Absolute maximum ratings
01-Jul-2015 2 - updated Table Thermal data
- updated Table Avalanche characteristics
In Section Electrical characteristics:
- updated and renamed Table Static (was On/off states)
- updated Table Dynamic
- updated Table Switching times
- updated Table Source-drain diode
Added Section 2.1 Electrical characteristics (curves)
Modified Table 2. Thermal data.
22-Aug-2019 3
Minor text changes.

DS10532 - Rev 3 page 10/12

 STF43N60DM2
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

DS10532 - Rev 3 page 11/12

 STF43N60DM2

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DS10532 - Rev 3 page 12/12

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