DATA SHEET

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IGBT - Power, Co-PAK BVCES VCE(sat) IC

N-Channel, Field Stop IV, MQ 650 V 1.45 V 50 A

(Medium Speed), TO247-4L

650 V, 1.45 V, 50 A PIN CONNECTIONS
C
FGH4L50T65MQDC50
Using the novel field stop 4th generation IGBT technology and E1: Kelvin Emitter
E2: Power Emitter
generation 1.5 SiC Schottky Diode technology in TO−247 4−lead
G
package, FGH4L50T65MQDC50 offers the optimum performance
with both low conduction and switching losses for high−efficiency
operations in various applications, especially totem pole bridgeless E1 E2
PFC and Inverter.
Features
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• 100% of the Parts are Tested for ILM (Note 2)
• Smooth and Optimized Switching
• Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 50 A
TO−247−4LD
• No Reverse Recovery / No Forward Recovery CASE 340CJ
• Tight Parameter Distribution
• RoHS Compliant
MARKING DIAGRAM
Applications
• Charging Station (EVSE) • Solar Inverter
• UPS, ESS • PFC, Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
$Y&Z&3&K
Collector−to−Emitter Voltage VCES 650 V G50T65
Gate−to−Emitter Voltage VGES ±20 MQDC50
Transient Gate−to−Emitter Voltage ±30
(tp < 0.5 ms, D < 0.001)
Collector Current TC = 25°C (Note 1) IC 100 A
TC = 100°C 50
Power Dissipation TC = 25°C PD 246 W
TC = 100°C 123
Pulsed Collector Current TC = 25°C (Note 2) ILM 200 A $Y = onsemi Logo
&Z = Assembly Plant Code
TC = 25°C (Note 3) ICM 200
&3 = 3−Digit Date Code
Diode Forward Current TC = 25°C (Note 1) IF 60 A &K = 2−Digit Lot Traceability Code
TC = 100°C 50 G50T65MQDC50 = Specific Device Code
Pulsed Diode Maximum TC = 25°C IFM 200 A
Forward Current
Operating Junction and Storage Temperature TJ, −55 to °C ORDERING INFORMATION
Range TSTG +175 Device Package Shipping
Maximum Lead Temp. for Soldering TL 260 °C FGH4L50T65MQDC50 TO−247 30 Units / Tube
Purposes (1/8″ from case for 5 s) −4LD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. VCC = 400 V, VGE = 15 V, IC = 200 A, Inductive Load, 100% tested
3. Repetitive rating: pulse width limited by max. junction temperature

© Semiconductor Components Industries, LLC, 2021 1 Publication Order Number:

October, 2022 − Rev. 1 FGH4L50T65MQDC50/D
 FGH4L50T65MQDC50

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance Junction−to−Case, for IGBT RqJC 0.61 °C/W
Thermal Resistance Junction−to−Case, for Diode RqJCD 0.70
Thermal Resistance junction−to−Ambient RqJA 40

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Test Conditions Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−emitter Breakdown Voltage, VGE = 0 V, IC = 1 mA BVCES 650 − − V
Gate−emitter Short−circuited

Temperature Coefficient of Breakdown VGE = 0 V, IC = 1 mA DBVCES − 0.5 − V/°C

Voltage
DTJ
Collector−emitter Cut−off Current, VGE = 0 V, VCE = 650 V ICES − − 250 mA
Gate−emitter Short−circuited

Gate Leakage Current, Collector−emitter VGE = 20 V, VCE = 0 V IGES − − ±400 nA

Short−circuited

ON CHARACTERISTICS
Gate−emitter Threshold Voltage VGE = VCE, IC = 50 mA VGE(th) 3.0 4.5 6.0 V
Collector−emitter Saturation Voltage VGE = 15 V, IC = 50 A, TJ = 25°C VCE(sat) − 1.45 1.8 V
VGE = 15 V, IC = 50 A, TJ = 175°C − 1.65 −
DYNAMIC CHARACTERISTICS
Input Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Cies − 3340 − pF
Output Capacitance Coes − 630 −
Reverse Transfer Capacitance Cres − 10 −
Gate Charge Total VCE = 400 V, IC = 50 A, VGE = 15 V Qg − 102 − nC
Gate−to−emitter Charge Qge − 19 −
Gate−to−collector Charge Qgc − 25 −
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time TJ = 25°C, VCC = 400 V, td(on) − 27 − ns
IC = 25 A, RG = 15 W,
Rise Time VGE = 15 V, Inductive Load tr − 10 −
Turn−off Delay Time td(off) − 181 −
Fall Time tf − 21 −
Turn−on Switching Loss Eon − 0.24 − mJ
Turn−off Switching Loss Eoff − 0.31 −
Total Switching Loss Ets − 0.55 −
Turn−on Delay Time TJ = 25°C, VCC = 400 V, td(on) − 29 − ns
IC = 50 A, RG = 15 W,
Rise Time VGE = 15 V, Inductive Load tr − 21 −
Turn−off Delay Time td(off) − 173 −
Fall Time tf − 18 −
Turn−on Switching Loss Eon − 0.54 − mJ
Turn−off Switching Loss Eoff − 0.59 −
Total Switching Loss Ets − 1.13 −

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 FGH4L50T65MQDC50

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Test Conditions Symbol Min Typ Max Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on Delay Time TJ = 175°C, VCC = 400 V, td(on) − 24 − ns
IC = 25 A, RG = 15 W,
Rise Time VGE = 15 V, Inductive Load tr − 11 −
Turn−off Delay Time td(off) − 197 −
Fall Time tf − 24 −
Turn−on Switching Loss Eon − 0.31 − mJ
Turn−off Switching Loss Eoff − 0.51 −
Total Switching Loss Ets − 0.82 −
Turn−on Delay Time TJ = 175°C, VCC = 400 V, td(on) − 26 − ns
IC = 50 A, RG = 15 W,
Rise Time VGE = 15 V, Inductive Load tr − 27 −
Turn−off Delay Time td(off) − 186 −
Fall Time tf − 26 −
Turn−on Switching Loss Eon − 0.74 − mJ
Turn−off Switching Loss Eoff − 0.97 −
Total Switching Loss Ets − 1.71 −
DIODE CHARACTERISTICS
Diode Forward Voltage IF = 50 A, TJ = 25°C VF − 1.46 1.7 V
IF = 50 A, TJ = 175°C − 1.83 −
Total Capacitance VR = 400 V, f = 1 MHz, TJ = 25°C C − 210 − pF
VR = 600 V, f = 1 MHz, TJ = 25°C − 202 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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 FGH4L50T65MQDC50

TYPICAL CHARACTERISTICS
200 200
TJ = 25°C 20 V 10 V VGE = 8 V TJ = 175°C 20 V 10 V
175 175
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

15 V 15 V
150 150
12 V 12 V VGE = 8 V
125 125

100 100

75 75

50 50

25 25
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

200 200
TJ = 25°C TJ = 175°C
Common Emitter
175 175
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

VCE = 20 V
150 150

125 125

100 100

75 75

50 50

25 VGE = 15 V 25 TJ = 175°C
TJ = 25°C
0 0
0 1 2 3 4 5 0 2 4 6 8 10
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Typical Output Characteristics Figure 4. Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)

2.5 10000
Common Emitter Ciss
VGE = 15 V
C, CAPACITANCE (pF)

IC = 100 A 1000
2.0 Coss

100
IC = 50 A
1.5 Crss
10
IC = 25 A
VGE = 0 V
f = 1 MHz
1.0 1
−100 −50 0 50 100 150 200 0.1 1 10 30
TJ, COLLECTOR−EMITTER JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Saturation Voltage vs. Junction Figure 6. Capacitance Variation
Temperature at Variant Current Level

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 FGH4L50T65MQDC50

TYPICAL CHARACTERISTICS
15 1000
Common Emitter VCC = 200 V
VGE, GATE−EMITTER VOLTAGE (V)

IC = 50 A

IC, COLLECTOR CURRENT (A)

12
100
VCC = 400 V 10 ms
9
100 ms
VCC = 300 V 10
6
*Notes: 10 ms 1 ms
1 1. TC = 25°C
3
2. TJ = 175°C DC
3. Single Pulse
0 0.1
0 20 40 60 80 100 1 10 100 1000
QG, GATE CHARGE (nC) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Gate Charge Characteristics Figure 8. SOA Characteristics

100 1000
Common Emitter Common Emitter
VCC = 400 V VCC = 400 V
td(on)
VGE = 15 V VGE = 15 V
SWITCHING TIME (ns)

SWITCHING TIME (ns)

IC = 50 A IC = 50 A

td(off)
100 TJ = 25°C
TJ = 175°C
tr

TJ = 25°C tf
TJ = 175°C
10 10
0 10 20 30 40 50 0 10 20 30 40 50
RG, GATE RESISTANCE (W) RG, GATE RESISTANCE (W)
Figure 9. Turn−On Characteristics vs. Gate Figure 10. Turn−Off Characteristics vs. Gate
Resistance Resistance

1000 1000
Common Emitter Common Emitter
VCC = 400 V VCC = 400 V
VGE = 15 V VGE = 15 V
SWITCHING TIME (ns)

SWITCHING TIME (ns)

RG = 15 W td(off) RG = 15 W
100

100
tr TJ = 25°C
10 TJ = 175°C

td(on) tf
TJ = 25°C
TJ = 175°C
1 10
0 30 60 90 120 150 0 30 60 90 120 150
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 11. Turn−on Characteristics vs. Figure 12. Turn−off Characteristics vs.
Collector Current Collector Current

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 FGH4L50T65MQDC50

TYPICAL CHARACTERISTICS
10 10
Common Emitter Common Emitter Eoff
VCC = 400 V VCC = 400 V
VGE = 15 V VGE = 15 V
SWITCHING LOSS (mJ)

SWITCHING LOSS (mJ)

IC = 50 A Eoff IC = 50 A
RG = 15 W

1 1

Eon
Eon

TJ = 25°C TJ = 25°C
TJ = 175°C TJ = 175°C
0.1 0.1
0 10 20 30 40 50 0 30 60 90 120 150
RG, GATE RESISTANCE (W) IC, COLLECTOR CURRENT (A)
Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector
Current

200 10,000

175
OUTPUT CAPACITANCE (pF)
IF, FORWARD CURRENT (A)

150
1000
125
TJ = 25°C
100
TJ = 175°C
75
100 Common Emitter
50 VGE = 0 V
f = 1 MHz
25 TC = 25°C
0 10
0 1 2 3 4 5 0 1 10 100 650
VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 15. Forward Diode Characteristics Figure 16. (Diode) Output Capacitance (Coes)
vs. Reverse Voltage

50
Eoss, CAPACITANCE ENERGY (mJ)

40

30

20

10

0
0 100 200 300 400 500 600
VR, REVERSE VOLTAGE (V)
Figure 17. Output Capacitance Stored Energy

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 FGH4L50T65MQDC50

TYPICAL CHARACTERISTICS
ZqJC, THERMAL RESPONSE (K/W)

1
0.5 Duty Cycle
Duty Factor, D = t1/t2
0.2 PDM Peak TJ = PDM x ZqJC + TC
0.1 0.1
t1 R1 R2
0.05
0.02 t2
0.01 C1 = t1 / R1 C2 = t2 / R2
0.01 i: 1 2 3 4
ri [K/W]: 0.0111 0.0951 0.0879 0.1143
Single Pulse T [s]: 1.09E−05 8.96E−05 5.78E−04 2.801E−3
0.001
10−6 10−5 10−4 10−3 10−2 10−1 100 101
RECTANGULAR PULSE DURATION (sec)
Figure 18. Transient Thermal Impedance of IGBT
ZqJC, THERMAL RESPONSE (K/W)

1
0.5 Duty Cycle

0.2 Duty Factor, D = t1/t2

0.1 PDM Peak TJ = PDM x ZqJC + TC
0.1
0.05 t1 R1 R2
0.02
t2
0.01
0.01 C1 = t1 / R1 C2 = t2 / R2
Single Pulse i: 1 2 3 4
ri [K/W]: 0.0408 0.1009 0.1009 0.1819
T [s]: 7.15E−06 1.62E−04 3.40E−04 2.94E−03
0.001
10−6 10−5 10−4 10−3 10−2 10−1 100 101
RECTANGULAR PULSE DURATION (sec)
Figure 19. Transient Thermal Impedance of Diode

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON13852G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247−4LD PAGE 1 OF 1

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