SES8619AG

SES8619AG Product Description
Silicon N-Channel MOSFET
Features Application
• 100V, 21A • High Frequency Switching
• RDS(ON) = 9.5mΩ (Max.) @ VGS = 10V, ID = 20A • Synchronous Rectification
• Low RDS(on) & FOM
• Extremely low switching loss
• Excellent stability and uniformity
• 100% UIS tested , 100% △VDS Tested
• RoHS and Halogen-Free Compliant (MSL1)
Package
SOP-8
SES8619AG
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol Parameter Max. Units
VDSS Drain-Source Voltage 100 V

VGSS Gate-Source Voltage ± 20 V
note5
ID Continuous Drain Current TC = 25℃ 21 A
note5
ID Continuous Drain Current TC = 100℃ 13.5 A
note3
IDM Pulsed Drain Current 85 A
note2
PD Power Dissipation TC = 25℃ 8 W
IAS Avalanche Current note3,6 17 A
note3,6
EAS Single Pulse Avalanche Energy 60 mJ
RθJC Thermal Resistance, Junction to Case 16 ℃/W
RθJA Thermal Resistance, Junction to Ambient note1,4 75 ℃/W
TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃
WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 1/7
A
Electrical Characteristics TC=25℃ unless otherwise specified

Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristic
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 100 - - V
IDSS Drain-Source Leakage Current VDS = 80V, VGS = 0V - - 1 μA
IGSS Gate to Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 1.2 1.8 2.6 V
VGS = 10V, ID = 20A - 8.2 9.5 mΩ
RDS(on) Static Drain-Source On-Resistance
VGS = 4.5V, ID = 10A - 11.3 13.5 mΩ
gfs Forward Threshold Voltage VDS= 5V, ID= 20A - 15.5 - S
Rg Gate Resistance VDS = VGS=0V, f = 1.0MHz - 1.66 - Ω
Dynamic Characteristics
Ciss Input Capacitance - 2131 - pF
VDS = 50V, VGS = 0V,
Coss Output Capacitance - 606 - pF
f = 1.0MHz
Crss Reverse Transfer Capacitance - 21 - pF
Switching Characteristics
Qg Total Gate Charge - 29.4 -
VDS= 50V, ID = 20A,
Qgs Gate-Source Charge - 9 - nC
VGS = 10V
Qgd Gate-Drain(“Miller”) Charge - 5 -
td(on) Turn-On Delay Time - 17 -
VDS = 50V, ID = 20A,
tr Turn-On Rise Time - 4 -
RG = 3Ω, VGS=10V ns
td(off) Turn-Off Delay Time - 32 -
tf Turn-Off Fall Time - 8 -
Diode Characteristics
IS Continuous Source Current - - 21 A
VSD Diode Forward Voltage IS=20A . VGS = 0V - 0.86 1.0 V
trr Reverse Recovery Time ISD=20A, - 50.7 - ns
Qrr Reverse Recovery Charge dlSD/dt=100A/μs - 72.5 - nC
Notes:
1. The value of RθJC is measured in a still air environment with TA =25°C and the maximum allowed junction temperature of 150°C. The
value in any given application depends on the user's specific board design.
2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
3. Single pulse width limited by junction temperature TJ(MAX)=150°C.
4. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
5. The maximum current rating is package limited.
6. The EAS data shows Max. rating. The test condition is VDS=50V,VGS=10V,L=0.5mH
A
Typical Performance Characteristics
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. Drain-to-Source On Resistance

Figure 4. Body Diode Forward Voltage
vs Drain Current
vs Source Current and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

A
Figure 7. Normalized Breakdown Voltage

Figure 8. Normalized On Resistance vs
vs Junction Temperature
Junction Temperature
Figure 10. Maximum Power Dissipation

Figure 9. Maximum Continuous Drain Current
vs Case Temperature
vs Case Temperature
Figure11. Drain-to-Source On Resistance vs Gate Figure 12. Maximum Safe Operating Area
Voltage and Drain Current
A
Figure 13. Maximum Effective Transient Thermal Impedance
A
SOP-8 Package Mechanical Data
UNIT:mm
RECOMMENDED LAND PATTERN MIN NOM MAX

A 1.35 1.65 1.75
A1 0.10 0.15 0.25
A2 1.25 1.45 1.65
b 0.30 0.40 0.50
c 0.17 0.20 0.25
D 4.80 4.90 5.10
E 3.72 3.87 4.02
E1 5.95 6.10 6.25
e 1.27BCS
L 0.40 0.65 0.90
L1 0.92 1.07 1.22
A
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there
is any question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
WINSEMI Microelectronics Co., Ltd.
ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen,
P.R. China.
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com

SES8619AG

Uploaded by

Copyright:

Available Formats

SES8619AG

Uploaded by

Document Information

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

SES8619AG

Uploaded by

Copyright:

Available Formats

SES8619AG Product Description

Silicon N-Channel MOSFET

Absolute Maximum Ratings TC=25℃ unless otherwise specified

Symbol Parameter Max. Units

VDSS Drain-Source Voltage 100 V

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 1/7

Electrical Characteristics TC=25℃ unless otherwise specified

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 2/7

Typical Performance Characteristics

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Figure 3. Drain-to-Source On Resistance

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 3/7

Figure 7. Normalized Breakdown Voltage

Figure 10. Maximum Power Dissipation

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 4/7

Figure 13. Maximum Effective Transient Thermal Impedance

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 5/7

SOP-8 Package Mechanical Data

RECOMMENDED LAND PATTERN MIN NOM MAX

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 6/7

www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 7/7

You might also like