EEE 2403807-05. 2093 # FEE 2408 Lea SOL Fleetronies T * Syllabus - *. Diode: Basie operation and applications #1 BIT! s » : : ft FET 5 7 7 ‘ é * ‘Thins to. knovy ! 1. KUL) K@L. » Ohm's low The Series, Pavalle) or: Node, branch ¥ Basies - #. @onductor + Cu, AL % -Gheulotor | Hiea, Wood | Tie Semteonduclor + St, Be, GaAs * Resistivity ' 2 BH eRAE Point rabbis) ch Oo ne aa a = NQm \ Sane’ A AG : fe = aed (w) Podpsd fr > Te > Ts >In Py = 10° Dem (Hiea) P, = Or 50 Nom (St) = 60 fom (Ge)# Energy Bond Diagram i _y orbit 5 nugleus (prolon + nextron) wa # Preray Band : Tre wonge of energies posseaced by an e fn a solid , 8 known aS energy band . & Valence Bond (Vd)! THe range of enerpies possessed by. valence es )% ealled valence band. ) Conduction Bond (eg) +. Energy bond formed due, to, merging of energy levels associated with the free, eleatrong ealled eonduction band « : Forbidden fnengy gar /Band | Glectrons never found in this gop «While jumping, fron VQ to CB Es have to erogg the, gap:Tneulaton og YMA Fg/Eb = 6 ev vTap vB L v= LG xs? WW, gf= 116 ev s Ges O75 wv LLM : Semieond uetor KK a@onduator0% .0b. 9023 lee 02. # Thiringie and Extrinsle Semiconductor @ TMtringie Semiconductor | + They are pure semiconduejop * » Free, electron are only due to notural eguses like Night » thermal energy , ()—@) sae lottiee of Si ome ALE $ ' 7? “vesishence *OT +S, Ge are both hve temperature eo-efficient. « Conductors ave (Ave jemperature eo- efficient, S temp AGE D Exirinsie Seri conductor : regisjonce 21 i Pmpurit atoms are added . + “Two types of tmpurities ore there . Added J part ‘in 10 million , + Process of adding certain impurity olomg 40 quee semiconductors 1$ called doping . Two Aypes of Furrlies are there, Pera valent import (Antimony ae /s,, 8b) @ Frivalent impurity (B, Al 1 Gia, Trvdiven)* Asler doping, % exirinsia, materials are produced. @ n-type —> odding pentavalent impurity Mp-tye— > arivalend i «n-type semigonduaron | 5th valenoe e of Prcinwony. Gree €) Ghis extra e 19 dridted go, we have electri@ current, —— Hole (abseswe of @°) So, we have 2 types of charge earriers ‘mn semigonductor, aleetron (i) Hole,* n-type material —> majorit - caprreps “@-@°@° 6 &s milnortly Carriers (holes) Donor tong (Cirmotile; ond) @e majority @arriers (holes) ig minor Garters (es) Aceagtor lons (immotvile uns)* formedion of depletion region in pn junction : Polyre__nelype wesore hele, | 5 usin —, |. diffusion : ape — ! cle, diffusion oe iw lott ogaved qne diffused e% eome'n contact vith holes on se and are elfvinated by reeombinalion . Likewise, for the diffused holes on n side. The pet result fo-the diffused es and holes are one, leaving behind the charged tons ad facent- do the iwlerface im a. wegien no mobile charge, anvriers , called the Depletion region, * Gwtegrating the eleetrie field across the depletion vegion determines what is called buftt Yn potential ov barrier potential, vy, .& Diode — ga Jpaelion + — is formed by p-type and n-type gomiaonductor, — ne Joining is done by 1@ fabrication . - Al gemieonduetors have at least one pn june, > Diode - Diode ig a spestatized eleetronie component wih two electrodes called the node and. the Cathode, — PM has one On jun®. = 's a bipolar ond nen lingan device, - DY aonduets leatrictty jin one direction, sy symbdl 7 me an Anode. Cathode (a cD Fe. LED, Photodiode ete09.05 2098 % Application : Lee 08 7, Qeetiffer TT. Signal lintjers iit, Voltage regulecior Vv. Switches ve Signa modu actors/ Demoduletors ete. F Bios | Refers to the application of an external voltage oeress the two jerminals of the device to extract a response, * On junction under diferent et! eon dition ' » No applied Bias : i. Fornard Bias CFA) Ti, Reverse Bias (RA) moje. Might “i 2 P\ofo.e] {29:9 \@%a%@ | — Aer & Sha Bormiers rea ; t elo! ] jectronsd = f Tal, i* When a pn juncifon diode is eonneeled in a zero bias eondition, the Jollowing phenomenan OeAUPS | 7. holes Jrom 9 type to m ype diffuse and recombine with free 6. ih e's from n type top type difuise. and recombine with holes - Tit, Diffusion takes place due to comentretfon difference of two sides ‘ws os left. behind the uncompensated . donor @)ve or positive fons and holes left behind the uncompensated accep|or (-\ve or negative ions, Vi Tus after fer’ recombinations a region depleted of Sree carries is ereated. The region 5 known 0S depletion region on space Gharge, region, ‘ Vi. Due to the —difjugim ef &s and holes, a current ig generated from 9 side to n side known as digfusion eurrent > dy. Vi. Due to gotential barrier , no majority carrier can 99g6 across the junction. But the polentia) porrier helps the minority carrier to pass across the Junction. Thus. 0 current is formed grom n side to-9 sid@ kno as drigt eumrent , To, Then an euiliibrium or balan i establi 30 Oe eontn 0, cer Will be established¥ Peward Bios Condition (p> 0 V) Tifoy > ty Helel > AYR | ply Ae te otk a Ne l@!: tye ut Le \ Diode, currant , Tp = Trmafertty — 1 - Forrrard bios will pressure e”s' and holeg | — With jnereasing, applied voltage the width of depletion region io peduaed when the applied voltage exceeds the batt ix vwltoge the diode stars to eonduet- eleetrictty trom p to n sides. i* Reverse, Bios @ondi|fon | (Vd V) SOOO: Leia! rH HP a@ bia: ar lype expe! Kea j Evi wel ne — Net effect: - Widering- ef deplestion region — fnarenses.. jun? capacttanee No mafority cordlers, eon glow - Only mino eit Gorriers Gan Pass — for minority flow, the eureent thot exists “46 Yow as reverse saturedion Guerent - 4rom n to 9 side.£4 ,05.2093 % Bull] in voltage Lea | oY . Na No Mo = Vy In oe = 0'6 ~ 0'8 V (Gi) Here, Vy = thermal voltage = a = 95 mV op 26 mV K = Boltaman constant = 4°98 » 40-23. J /Kelvin T= $00 K at room temp, fa Ler 107}? eoutomnb Na = eoneentration of: ' acceptor fons Np = Conetrtration af donor jong ni = cont of free & and. holes jn mtringie semleonductor ¥ TT VL Md Jomp ALPGL change ANGE | TL Yt wt utlimately Vp GUT Ye ear I* At equillfbpium | XpANA = % AND GF ange nee 4 f\ = cross-sectional area a> Hn Nal Xp Np Waep = Xn t % “ = {98 ft gl? ¥ Na +p) bg = permittivity, of Si = TG & : Gy = B54 * 407 F/mn = 404 x 407"* F/om Typically, Wyep = O'L to, LamIV choracteristies of Diode, ! oh pyle" ee / / Fea ji So" raien 10 / ‘| / Boenledoet “FT, tor 09 07 vol") voltage | od. o 6 ee? 03 (No of minority yoltoge charge, eaerjers : ; are“ fixed.) BL Ge joo rei N { eh Ts (uA) Sot” Region | Tingedance, high, small + Breakdown Region | ‘Tmpedanee lew, high ‘Ts + Breakdown voltage ', Max™ allowable voltage at reverse region, where diede Tmeedange abeuptly “chan 5° from High to lew ond very igh cureert passes 4 rotigh tt ond burn ih x» Tnreshold voltege ' ft which diode starts +o @ondue} aurrent Algo Known a6 barrier Potential or builtin yoltage. si O7V Ge O8V GaAs —9 V3V¥ ‘Temp. effeat of TV eueve (Si) Np & Tn case of RB condition we ? ‘ -15'@ G doutles Jor every / | Joa Temp. cise ee / r ye iE HI Fo asteosona [| ee otey O7V 095 oe E> WA | a + Therease af temp at FO : | ee oA ion of St diode, Ht i Shifts fo the lest side > \yo4uy | 95°¢ aoe ot a rote of 25mv/%e. hot means -9°5 mv /°@ osre temp vise. Hee Sg %* Breakdown voltage may “merenge/ decrease depending om zener potential .* Shoekley’s equation | eae S/n Vr Tp = Ts (e ) Here, J = Diode eurresrt Ts = Reverse saturation current Vp = Diode vottoge Ne Tdeality factor Depending. on operating condition and physical eonstruction , = bed” Ind Vy = thermal voltage, VWpr0' T= fT pein Wl.) T= 3 VWy=0) a0 R= 0 —> fpreward pesigtance, Rp = 00 —> reverse resistance15, 05, 2025 lee! 0b al ay ‘ Mi > Wits > Jar A. DG om clatie resistance, ' qhe application of a De voltage do G eiraui-+ aontoicing, & diode will result the diode to offer a eesistanee that does nof very with time , this resistance is known 0S DG or cinta pesistanee, A Storie. Resislanaa, Ry =+ AC op dynamic resistance | qhe dynomie resistance 13 the resistance offered by the pn june diode when AC vollage is applied . a4 3sinot change im voltage Change euprent = AVd AN¥H= Ble Sohne -i) > hth avins Ts Ht - Wir > mR f > in (Sot 8) = Vo jr [15 15 very small] > Am Wor) = = ae dtp 4 2? Forts : 45 “Mp Wr db ‘rds = 7 wh Vr > Vp 2 [> B] “dh 2 at 7? 47H = 96 mV th Vp = 25 mV / 26 mV¢ Load Line Analysis + - Ff the onaysis 15 performed ina cophieal manne, a line Gon be drown on the charactenistias curve, _ his line is known aS food line and th represents ep qhe Wnear Port Cload’) of the eireutt eonneeted to non-linear device (diede’) . _ te interseetion of the load fine with the chovocteristies will determing, the peimt of operation of the Feat known as operating poimt~ or @ port /Quiseent point (Rest [Unmoving). R Tp By KVL, t ~Vpp +t HR+ Vp =O Vo \ 7 ? Vo = V+ HR _ _@) Sp Thar ARI ogee tha fo) @ (Vo Tsa) De load Hine z B point 4 VR Vmax = pp tn oO, ® %v=0, Vomae = Vo @ Np=0, Tvmay = we% Seda and Smith x examole 4° Cage r7e) AA dilteon diode, ts sald to be a ‘mf device Aoplays & Jorward vollage of O7V at a current of L mAs Evaluate the junction seal ling corglant Ts. Whot sealing constant would opply dor a 4 A diod@ ~ af the seme manufacturer that eonduets 4 A at 0'7V? Left Wir s rie, To = Ibe ates inde "ade = 103A ST = he | Wye O7V- ot 4 = = loexe ee ae , Ni Ve = 95 mv = 69 AIO A = Maio? V it diode aa = q, 07M OT ix aon so = ire = G9% 4o7 42 A& exercise 4°6 Find ane change in diode votage if the eureent changes from oh mA +o 10 mf). Vay = 9:8 Vy tog 72 = 99x eI? x tose = fb mv x examale 44 (Gage 180) Deleomine tne current Ty and diode voltage Vp for the cireutt in Sigure with Vop=5V and R=4kQ. Assume thot the diode has a eurrent of ImA ot a voltage. of OT V. & syn + Vo Vp OTV, tmA =5N . Vay Vb 5-OT he PEO saya 48, mA Now, Vo-My = 29 Verlogay = >> Vy. = 074 298 M5 eI"? x log VP = 0786 V “he OTR 4264 mA ond \y = O1364 23x95 X10°%rt0g Li! = 0785 V Op = 4964 mA, Vp = 0735 V16.05.2094 lee }-06 ie Design the okt fn igure Jo provide on output voltage of 24 Vi» Aesume the diodes hove available ot OT V drop at J mA. a +40V 28 Vag heat JOY, may 7 oy Vp boats ogy wilt fies = wk = -M =o I ww 2:3Ne log ; 5 Sprtns 3 1 a > 03 -OT = U3x 25x 10% x log aie = bh mA > T= 01055 A No- 24 943g KO. bb 7 = 488% Unttadins ‘tm the operating conditions of pn jun’ @ Hox" Jorvord current) Ot ig the highest Ynstomtaneous forward eurrent that & pn jun® ean eonduet without dasnaging. the. junction . ® Peak Mrverse Voltage (PV)! Max” allowable peverse ving voltage thet a diode can withstand without darnaging, the junction. Hox” power eoding St 15 the max" power thaf- eon be dissipated veithout darnaging. ih* Diode modeling \ @® Piecewise Linear Model (Pw) * Joh) slope Ye ng 4irae®) 9 | “6 yy WW) ® 0°6\ . oe i tong = - ste fine @ evtth slope o qi © 20 5 VbdVb, 4 gt. tine @ with sbpe Vry oy p= Wee} Vea Nhe or $0, * Shecerse ‘Yinear model can be, “pepresented as, wh A : VY Teal 2 uN Vp= Vbo +@© Constoart voltage, drop model | \ ' (widely used) ervey 9 L dope = B= soet-t. slope = od = = “(4 =0 Vp20'7V, i =O) fad et ys = Meal . i baka ee sieo7V ; ~ = | 6e.=0°3V bY GaAg= BV 6) Peal diede model | * at , . ‘| tip Vb=0 senna re t shork @kq— >. At eB, ape Vp = Soured, : , b=0 — open @kt-+0V wk ft \o % 3a9k | -5V hy in yov ATK Lp 10+ G92 t0'T-5 =0 > T= OT mA Ve t5 M22 =0 on, FF Ve = 0446 V gi na E8) > Ve = -O'M4E V24.05.2023, +o Lea | Of tTlhysi ¥ Ge. ¥8i ¥ Ge “ C DK —5V { I —\o+oT+ 09+ 52-5 =0 >T= 23 mA Wor, ge Ver G5) ve x t 5 Vat b- 51 =0 sy e9V > Wy=9VTay h >= I-h y= oT = ood mA <0 + O74 56E =O S2= a4 mA 12 S44 ont wh = 993 mA3+ 07+ 1-5 =0 > T=T3 mA \yt5- 2 =0 >My = X3V—l0V Suppose, PL ig on” y= Maes im Do is ™m: To = Ce = DmA q = t+ > Rauh ai-h Ae ee op ee yp vitor 151) 0 =0 (=m) p= (4°33 mA,Suppose, My Dr is on, | -o ( {= a = 09 mA Dy is on, . -07t OT 15% ~ 10 =0 > m= 9.mA Qa heh > My = Q-th 099-2 7 =i-op > da, to off: a " 40+ 10% £07 + BT, -10 = 0 [ty =24") Sp T= VABET mA\oV 40K lok JoV {ok 40kDa ,Do. +9 Meal — 10V Diy 10 =0 > iy = Dm ai § ip = AmA : By ts 1 4 yolg = DH Lima = = Ima M=O0V -10+ Jol, =091%. —9 St Bi-lo + 07 =0 Stye vee | Tah me -10 410%) + 0'7-0'7 =O = Unig = 186-1 = OBE mA yy-0' 720 SM = OT Vv40k oN Si si bb Db De 13 WK Foci ae vy %, 19 +90-+ 101; 1019 -O'7 + L014 +0 2 201, ~10h = -29°8 —® OT EMO fp — 1054-2010 + 101p— 101, -0'7 =0 2 $0; 1.20in ~ 10g = 10 —@ OT + Lots —A0in 30 =O > WD + 10g = 9°3 —@Oa 40V to + Jory + 0°7 + {OT} —20 =O [List] 3 Tye b 46s mA = Dy * OT + tf, -10 =0 > Ty =0'93 mA-\0 + 0° + 9% + 21 =O SP -MO+O'T + 2D + 2Ch+M) =O > T= V5 mA Jy = rh = 3d mA Vp 2434 = 0 27 Wo 2 62 V 104 OT + 48T tO'7 =0 >= OSA22.05,2098, lea’. 08 4 Small stanal model and HS Characteristes * ° pecan — —9 Q paint should we fixed 5 tn, the o) Wy) middle oF the eurve WO Vv de YO AG Aplnl Instantaneous input, “is w= Vb + yd) | Te time varying signal vy lt) having a -iniangular / sinuscidal woveform 1g superirnpased on the DE). th the absence of walt), . when welt) 1S applied , 4oia| imslowjoneous diode eurcent; bet Orr Not va (4) 1,e rune =% eile ont =o thins “? yw%§ the. amalfiude of the signal 13. kept sufffelen ty small, VO inv {1 hen, tint ce 4tv Ove Dh [essere Sp +t 4 ‘| SA GD= My + Mp uD ° pt ld nueg ® mB = =) 4 16 ealled dynarie [oe / smal signal resistance.%* Realifier | Rectifier 1s an eleetvonte, deviee thal converts Ne to De. — O lypes ‘ Q) HwR—> Half-wove peeliffer @ Fra “Gull- wave. eelkffer ‘ # Half -rove. reeliffer i on > By “An Lat, Vin = Vin sinot pulsating De (ie+Pd) Vavg =-7[ [M@NdCH] = He [ [Masinat aco)» (0. aat eo [ i “Sinwt- d (ot) ] = Ye [-easwot = Ye [-eoste + eos] evn = oe * Vm c= to tag -= [Ef ve? (wt) d (wt) . “Ee f Vist gin (wh) d (wt) + c 0. nde) he a pe Fi [ dot (wt) 44) _ = . | re | (1-ens2004)a (of) = [SEE [M@d ~ Fesret aw] cs [wi® - rey . = we {n- ee ras. Sn) Simi lowly ) Tog = 9-eteetoney. | * Ffficteney +h > Diode Sornard | resistance, 4 vin Ri = Vo = Vn sine ie evn = Tash ee sinot = Tm sinwt iNew te = pA ‘vy = Sn pms = ae qe = i 400% 99.05. 2023 Lee: 09 = Clg)? xR 6 a ae TR sags : a eu Gna = () xR doy * ate : 7 4 y Be 100% espe) 4 = Gens’) ae ime ger i00% [8 fh de] a (ye Jn) x i(ep a RE ; = te ? : = 40 Shs = Ay Gg) at b 499), 0: 2028 ° Lee 109 ¥* full wove. reelifien : i Sridge reeli{ier 1) Centre ~ tapped veelifier # Bridge reetfffer : L 4 dfede az bridge uM H bridge FR rg Dy Vy OM ond Va,V9 OtF Bo,De ON ond Di, Dy OFFVoug = + [™ d (w1') = 4 ("Mosi wl d (ol) = ac), : _ Nn_ Je eget" a be i = Mn Leos + eos | Tt Stent lowly » ie ‘Ups = \s 9Nm A Tl Tao [FT ee0 [ac wishrotd (wt) —— Ww 4{" aginst d (oot) Tt ee ee wee FF esau) d ot) - ee | Pu [Foster [rersaot dcop} ES EST, ~- 4 [sin2ul], Te Spun - § ental] oe Var Sr -[ singe —sind]f y - 4 te hm a = Wn wi = Sinilarly y homs, = a* FMieleney ' rH tha Vn & RZ NM Vin = Vin5 sinwot ye Min 2 Mashniot & 94 4 RL T= Smsinwot T= Vin 2 ook jag = == . = hms Fe «5004, ee = . = Aba #R Sona 11007, = Cong’) xR ac Gr) ‘ = at = 7 400%, a : 0 ‘ oe =0 5 % = (lowe) % (293+ &L) ‘ c rie dfode'] L = Seg x (984 + RL) = 81%# Center Tapped Rectifier : Vey 4 VN Dy Sort at (y)ve eyele , at Eyve eyele,28 05,2093 Lee +40 ¥ Advantage of full wave roetisien : @ duipul ts high. @ wastage of power fo less ® Esfielency is $1% x Pisad vantages of half wave rectifier : @ Load recieves approximately half of ‘input power. ® fiverage DO voltage is less. 6) Exffeleney 5 41% . # Peak inverse, voltage, crv) | 4 ox” ‘allowable reverse biag voltage that a diode gan withstand without darnaging the junction. + Dnporlance of POV TF reverse bios voltage across a diode exceeds +h value, the reverse current ineredses and breaks down the junction due to ewessive heat; So kenowieg of aN voting iS ‘mporlants @ Pav gating is 7 deelding faelon to design a diode. ty pentifion of+ Halt wave rectifier | PIV | cece yO R + T=0 —Vin + PTV = 0 1, RIVE Vn |o_Piv Min | * Full wave, bridge. rectifier | —PIV4 Vn + Vin = 0 >> PIV = Vm29.05.2023 cog Selecting a diode for diode rectifier ee th Giratt chro paramelers should be. selected 4; GB currerr hooting capability @ mv ripple SHY ‘age ; @ should be chosen a large value, & = Re SST RST [dec ‘rlerval] ; Load current, t= ee = ual Vp smal!) Desired : beh =ei Moe Att During diode off trlerval, Ve = Vp e a at the end of discharge Snterval » Vo = Vp-M Goce el’) ) Wee a more aceunale expression Jor / Teun out put votlage, Vo = Vp — Sp Now, “\Vip-Vp = Vee A =p Ve = eo 4 ; [ems ho “ee | Assuming the diode conduction ceases almost at ane peak of Vi, We eon determine eenduetion ‘mteeval AT. Vp 208 Cael = Vp-Ve We know, : @s (wat) = j- 9 jin (ea oy Since wat 4p ar small angle, 50, ens (wat) x | 2 (aty = -4 7 (wat ae Veh i~ AC = Vp-W > YW (uit = wJoat = |T determine the avg- diode auerent ducing aonduction , \povg » We eqns, yy Qsupplied = Vea at ie We know, iM ; ! ‘eng Fa "Davy “fe Capactior lost charge during discharge twterval, Qhost = Ne ew 7 ae = Qt ‘\e = CVp ? “it We - Cr = aL > Xaq = Be ~ Fexat Sat Ls teayg = Be og a - {|B and oat = {ae ; i \ [We - 2No_ > at = Slat = Ont | Vp ‘oa = Xcaug +L = Bini: Sinaia +4 fra fe Ong \ Ve = Int Ay — = I Lat nr JRE]flug. diode current, ; Vi "Dav = 1 [3 Wie ] Max" dled current; “bpaxe = Ty [ssa [At ] + far full wave rectifier vith {fHee capacitor : Me DSRE wat = | ae a [he rie | 1 [s+ FE | Vp = NW ‘ "De “4 ‘Drax30-05.2023 Lees $2 Ripple Factor , woe G = RUS weve of ae component Toe Value of de componest Te We know, Teas = [aot Be > The = Jie Ta 19 = Utne Tee ou Sime 4 ct | Tae * For hatf wave rectifier | = | Gmpy % (ee ‘ = yor & For Sull wove vectiffer » = | Gnftzy _ > [ae = 0°48x Design of & DA power supply. ! Piode ceelisiew elt fitter eogactior Voltage, Pegalect oP Load¥ A crystal diode having an imlernal resistance of 5 {9 given in a half wave rectifier. The. jurn pollo of traneformen 16 5 and the load \ resistance is 800 A-. H the applied voHage, of Aeongformer 1s 220 Val 5D Hz, caleulate — @ Priv @ ve output vollage 6 Treul and output ower G) efficiency of rectifer bei Aba 8) QOOV (ers = oz | ; R= 300 ve oe BP = 44 Ved) y Vin = Voms % {L = AYx I = 69'995 V a OTN = Vin = 62295 V Vr @ We [Voy = Fer G2 995 a Tl = (193 V= 0'03865 A Im Te = OTS Te = 00246 A “R= (Tome y% (54 ft) = (0'03865)"% (5 +306) = VOW Covy)” x RL (00246 x 800 o'434 W @n= Fy $00% fe One 7 100% = 40°93 % % i) nM¥ Sedro Smith example 4'% (gage 204\) Goneider a geak peetifien fed by 0 60 tle dinusotd having a peak value’ Vp = JooV» Let the oad resishmee Q=30kM. Find. the value of the eagncitonee @ thet will result in a peak to peak Rople of 2 Vs Aileo, caleulate the Sraction of the audle during witch the diode is eondueting and the overage and peak values of the diode @urrent; cm Ne Ve = Fee oe 400 ae = aeNe 60x 10x40? x 2 = $333 wr oer Oe wat = |e = lAso = «(2 Pad “Me diode conducts for = 00 om = 993% of the eyele, ow, . fig diode eurrent = 1 Ute AE) 300 (tat jez) = 32446 mA % 100%. N WW 00 10Maximum /peak diode eurrent, ‘Dax = Ut on AE) = de "(as on ) mA = €93'32 mAexercise 4°6 (Page 995) A half wave rectiffer eleautt with a J KM load operacles {rom 220 V 50 Hz household supply through @ 10:1 step down transformer» 1 uses a siffeon diode thot can be modeled to have a OV drop for any curren}. ‘ @ What fs the peak voltage of. the eectisied output Fin what fraction of the oyale, does the diode conduet.9 @) What ig the average output voltage 9 room ines nm Cuprent im the load 2 ® find the PDVief the diode 9 ns \b an wip 7OTY N ote | ka. f Nei = a = 20V (Gr) Vy = 2200) = 8h V @) Peak vottoge of the reetiffed output, S Vin ~ Vb = gy - OT = S0'4N VNme BNL ®Q = 20" ea = / XAG Prode conduction angle = 190-6-6 = 130-28 Vy = Vn sin8 = 480 -9.* 4989" > OT= syissing = iran." > = 1289" + Setion of the eysle = RE song = 4928 % @ wy = Whe BH 9°68 V @ fay = YO = 268 = 9B mA te ; Vm! 30'43 6", Sou Jn = a ed : ce ne = 968 mA © PIV = Vw oyu V*® Lxeretse 41169 ! 04,06 2008 A) full wave rectifier efreut} rith 500.0, load operates Jrom 990 V rms 50 Hz household suppl through a 514 Cenler-apped transformer, 7 yseg woo? diode ‘thal can be modeled 4o have a o7V dvop for all currents, ‘ Q What 15 the vale of PIV? @ whet fs the, peak voltage of the reotified ' output 2 for what Araction of the cycle does each diode aonduel 9 @ What ig the average output voltage 6 whet is the average eurrent in the teed 2 6 Determine the efficiency . i 2Vm" a 5h 1s 1) 7 | iw Holle. Ste io wh1 9 fire Vy = BO = a4 V Come) Mg = mb ay V (rm) Val = Abs 99.V (rms) Vin = 44 Vn = Veda = 2NE = SEV = 6200. reer @ Pav = Wn (D PIV = Yn = xo V . = 6O00V = Gu V @ val = YW 6) Val = V2 = 3yl-07 | = 62:99 ~ 4°4 = 90'44 V = 60°82 V diode conduelion , ‘ dlede conduction, 190-8-6 3g0-6-@ = = 130-26 190-2.) = 180~ 271'289 = 180-9 x 11939 Jor Odiode, 2(180-28)¢ =. 477409, % = 477492 Seapets Vy = Vinsin® + OT= Britsind Spe 1199 hasSraction a the a= I= @ Vag = eS 2M “ _ 2650 ei EUS 29 DY © tag = Mo ~ 19°36 500 = 83'72 mA = 304s. Avs 29\'5V = Vows Dims = qe = 4'5 %00 = 43 mA fe = (Tovg) * BL = s'12. 210°)" #500 = 0749 W 4 Qa rae» 500 “b = 866% ey) Vay = 2m! @ 4 aC = 1760825 MEET ‘ 2, 98°12: V. | BaNg ae © hy= St.) oe 500 =71 44m t © Vems 7 = 60°92 f& = 43V — Vems ONG epee & = 500 = 8 mA f= (Saug )* x Re = (144r 10-3) x 500 = 91998 WPF = (tems) a ee Gems)” RL = &axwwry x 500 = grand W = (6x08) ¥ 500 = $698 W we Po +400 % Awe 4s. x00 “te — 0749 | = 3°698 oops = gol %% Clippers DAypes * @ Series Clipper —» series biosed oO Forallel Clipper —s parallel biased wamg@le :% Ser'es Clippers yey st * Pt [4 Wert) joor = Ve Me . for Eve eyel, Ng 4254 0'T1Ve =O 3 Nb = 5-25-07 = Vev 05.06.9093, Leo’ 14 Vp-p = to V Ui Mg= Jojo =5V for Eve eyale, MOV ave eydle, Ni tN'6 + O'7 + Vo = O We 7-16-07 a47V 7 oA /\ -T Nevv si Kt ore? (A) iz -o ve cyele, Vy =O “68 1 = MOCK Vy Sor Eye ayole, Vy +07 -2'5 =0 aM “Br 0'7-25 =-63V when Vi =0, —M 40'7-2'5 =0 7 Ve =Ast Source ' : VE = Brb = 10 Vp-p Te ims = + = Ake for Or) cycle, -\y-Vbe + OT +Vy =O > Voe =-5+0'7+ 63 = 25V “, d@lual ciravit | lowe lideF Paralle| Ctippers * ook AW. | ‘ 3 \Ove® { 210k Vo awe. ve | (ve a ele, Ove eyele, avy 25 -OT =O Vo=-5V y= ORV Ny y ¥06. 06. 2025 Lee! 15 /\ | } tf an at Qve yale, or Vye tO'7 +My = 0 “ ; see ony RA Moe = ~O'T- C9) | a = 5V “ i F ft eG R | — Wig 5 I ‘ ov | F 7 | wo & ov Rv | ie IV ; oy | Tr |: wl =f (TV ak @ve cycle, atcrve eyele, Vp +2'5-O'T=0 MB Are =-VBVate ae 2a v, He fh at Ene cycle, HVye t OT *Vo =o > Ve= OTE =35V * -— 40V as L Vb AL i ot (9) eyole, -2'5-O'7=0 AN = LV at (2) ayele, Wt25tO7T=0 PM = -B2V€ M 40 4 “10 a ielonay \h —> full wave eo I u rectifier I, * Clampers | fA Clamper is a nelvork Constructed of a diode a resistor amd a capacitor that shifts a waveform joo different de level without changing the appearance of the applied signal . y Rules * ® Hert the analysis at that hat of eyale when diode 19 forward biased. Copacttor will charge, at that half eyole, when diode iS forward biased. ee Ltat @ve aye le, V+ 0T+Ve = 0 5 07+ Ve =0 = 43 V Wto7 =0 Ay = OTN vi TU | No 9% ie “07 ese errr at () ve cyele, —Ve-Vo+Vo = 0 F No = Not Ve = h+43 =93N i$ dire wave,Vpe + 07+, =0 >> Vyo = -0'T-Vp =-o07-(92) = 25Vfo -20 @=4 MF wre at Eve eyele, -Ve-5 + O'7 +Ve =0 > Np = + 2045-07 = 949 V Vy 407 20 aM a HOV Mi 1 +— | t+ 207 Ne ay | at (ave evel, —Vy- Ve tVo = 0 2 Vy = Vet Ve = 104m V =348 y eae if sihe wave, r~at Eve cycle, at @)ve eyele, 40 210 +07 —Vg—-Ve+Vo =O * ddets off. 2 Vb = Not Ve MeV = 10 +0 = 40 V Ve “Vp tVe=0 Noe -l0V vi ef | | + “of | | Vo -\041.06, 2023 Lee: 16 + Zener Diode! 2 Heatly , fi properly. doped erystal dfode whigh has sharp breakdown voltage 18 known’ a3 ‘Zener dfode. * Syenbols ‘ (fe pf. k onde Gadthede, fA o—{P[a}— K fA e—t—— K R rs Fo a = 3% & Normal dfode a ; - 4 Hikes tee Vk a Va = Veet Te? RO Ty a IL 7 voHage wregnlactor / i! ins We A ennstant vo Hage, & Appliendion 6 Voltage reguloctor @ Surge, protector @B) Wavegorm clipper& DV charactertsiies af Zener diode ' ¥ Teangoralure effect on Zener dicde + Brew dfode’ whoses'Ve 4.5V exhibit Ove Jemperatare, @o- efficient . —> Zener diode, whose Vp BV exhibit &)ve Aterniperecture 00 esficient, —> formal diode (FB) exhib Eve temperarture: co-eflicfort, > —25 mv/"e ‘* Zener ‘has rating: I ® fowee cedirg , Soman @® Breakdown voltage, Vz. @ Breakdown euerent, ie ) bagab pl i) * Mere ore > proesses ‘of reverse “bewnkdonn + QO Avaloneher Breakdowns’ (lightly. doped 7rosetely neers gn peony When the minorit e carriers that: Grose! the depletion region under the. fluence of the eleatife -ffald, goin se susficient KE. to ber able, 40° break? covaledits- tonds in atom with. which they eolfide /) 7 Usually, Ne>7V. ® Zener Breakdown Zener breakdown occurs when the eleetric field fin the depletion layer Thereases im a point where it can break éovalest bonds and ganerate, eleetron hole pair. Usually W>5V, a * Reverse bias voltage. Spe + Soe of intensity of electra. Jfeld : + Breakdown covalent bonds in narpory depletion region «Greate EHP (eleetran hole. pair) + Grease reverse, Current » Sustain ot breakdorm voltage% Difference belween Normal and Zener dicde Zener | Normal ® Heavily doped @ Moderately, doped ® Lower breakdown ® Higher breakdorm voltage sll vollage,. ' ® Can withstand of Ve: B) Cant: withstand 3 roperty of ot Vp. (damaged) eonstant voltage ' source, a @ tees temporadure dependent: (A) more, lemperature dependent19.06.2099 Use of Zener dfode Lee! 47 05 Shunt Regulator ‘ , | at & Ns 4v Desire, Vo 4 (Vs, TL) @ Line ais 2 eh ae Be © Lood requlation =, ae mi") “ale “The Line Regulation % desfned 68) “he “change, in Vp corresgending to aA V change in) Ne. » Tre Load Regulation fo defined ag dhe change tm Y, anrecoponding to a Im change: i im I,& Fquivolesrt eestt : _——* 4 Ne Ves ul whet = 1-tL —@O Vb = Vist tnt, —O Np = IR + Ve +202 = (Tadd) Ra Vos t fete ALR BR Voy + Toe 7 = (Rez) A DRY Vow: eg Ne Res! aoe QaiP2:: if y 4 aN From > Me TR _ Vz» Ve = Nie? * Rave, Rr P2, Ray, Ree Pas = Va [el et eu : Ve = Vio Gig 7 NE CRN) + J, © ee 7© Line pequledion oY © Load regulatfon ond |R = Nboin = Veo P22 nin_ Tent + Tenax 4 lnos Tomtn = AVo te ae > Ree = AV - —(p, ae Ae AI = (Ri'r2) Rate12.06.2023 + ‘s remived to design a zener shunt regulator to provide on ou put voltage, appronfnately TOY, Te eave supply varies between 45 10 25 V. and the load curcenf, varies over dhe range of 0-15 mA. Me zener dide has Ve= 75 V at a eurrent of 20 mA and WS pr = 10-01, (@ find the required value vof R. Q Determine the line and; load regulation , © Determine the percentage change: in Vo Corresponding 4p the full chavige of Vg and TL, (Cn Nge 15 V 49, = 20 mA f= 100 Vendn = 15.V Thmox = 1D™4, Lx 1399°9 \ $05 = 5 mA f. Seyin = 4 Simax = Qs \omin ~ Veo = 2 Fein Nein + Duna H xi + 15 x10» i ‘ a5 A. \\‘ on, 8% ® Line Pequletion Tere oa ht $0) zt? joo 9725 + 10 = 00261 7 et Load regulation = — (Rilf2) 2 LOQPy! RTE Ratz up SYD AM 3125 + JO = —9'738 A\bh _ 0 5 f ® a= 0024 2 ANp =, 070264 (95-15) chaye. 0 \b coerespanding to she full” ahonge of Vs = O'D961X10_ wa go'y, Od sare ee = 34% AV — Xo = — 9138 Aq. co : > aNp = ~9°738% (9-8), change 9 Vo corresponding l, the ull cha of T= OTH "Lg "te STB A = s9°agDuylested 19.06 2028 % Boy Lea. 18 Ex 2296 ‘ f i =k Ms 2 + Pved’ Vi, Re yan, WeIMA Bae ML Vortable RL, dixed Vt Vv Fenox= 20, ” wo” Re Deteeming, V., Va, ta, fe we w= fay ¢ RP R= Bk, R+Re Vv, 2 3K. x6 = fk ae er Oe $k + 12k os Vv = 872V ; Verve yy Vk Ve 7 ws 4, Zener diode is off 1, Zener diodes, on . 17 =0 a Vio Ve =10V =0 Vp = le-10 Vk = W-M =6V = 1G~ 872. a, = Mos BM 2798 V Ro ok 7 ‘ = $35 mA) Tani = Cn “T= Tot TL . ; Ph, = Tank, = 6-333) \ = 267 mA = Velo = $0 x267 = 26'7 mwATX. 27: @ for the network th figure determine, he rarge oF RL ond Sor roafrlafning V= 40 v. ® Delerming the max" wactlage reacting . Ma % vor Wees Bat > (er Rive = Rl SR (VINE) 2 RAM 4 x fain OREM SE = 095 KA Fale 9 = 950A, ~ Mev 2 10s ap Nepax “Pan 750 40 mA Vee 40V = HOV 2 40 ma,” hog Pm maki | 2p iain = 10 Tove = 40-92 =8 mA 2 Tamox + SeminRemar = min - Vv SmA $95 kK. \ wen HY =O = YOu O Femox = Ve * Tomax v = 40x 32 OY i = $90 mW °Determine the range of VR haf a aa VT iva Vinio = let rt) 2.90 (990+ Lok’) 290.0204 12K). 1k = 93'67 V Vs MeV a, 200 yo = IG'GT mA, Tema = Damar + Dy = 0+ 1667 = 7667 mA Vimar = Seoaye * Rt Vo, = 36°87 V Tok ais Me 20 V GY nia =B67V enaye = 26°37 V# Waverform ClipperQ Find the out put voliage ne voltage drop aeress series resistance @ The current through the ‘zener diode Sols O W=M=50V @ vp= 420-50 = 70V @ te=t24 te = Tp- Se = 1 50 5k SOK = 9mf\ % Short key diode =) switching fast * Vamneter dicde, a Photodiode, * LED() Fhhd the ovlput voltage. The voltage drop aeross series resistance @ the eurreny through the ‘zener diode, SoM ® W=M=50V ® vp= 490-50 = 70 V @ r= t4 0 at = Te- fe = 7 50 5k SOK = Ome # Schottky diode, — switahing fast % Varwertor diode, Photodiede, * LED