1 Thewsistons —y Thamiston ty a semiconductor duviee having 3 Joyend , 2 donminals and 2 gunetions . —y Thone au 2 hypo of frarmistorvs 2 A] NPN tranaistor it) PNP transdoton . —> Tromiston ip an aenongm of two tome: | Unnangar- of- neststor” - ~ gt moans that the Enternal nercatance of drama he tnannfous from one value to another values depending on the biasing voltage applied TRANS{e roaESTOR SS TRANSISTOR, —p Sis called a ¥ipolan device couse electuc tunont Jowr due to gleetnon ound oles both Siyrublancowsly 2. both. type of coven tale blece pot In. the ewont conduction . Histony ¢ dn 47, a Bandean. and Wolter Bruodtain first invented Trowaiston ” ba oo anothonr dunekte 0. pn function. diode cohich “could control tw fod of rragontty ehonge canubrs . —» Jn 1954, Wiliiurr Shoe ley mace the modern. vornion. of the Lnannteton >pall is yariteh av OA dbypes of yn n > n ey © \" © "o ERO a — peed wo ont a ® J © ®, J P a wine deviee tht ain act at an ainpléfion . Unanaey arts. & ad PPPTo ebtain transisicn action vith. ao piy iels ine the dtHenont regions ode Rept defornt . Emi. - Emitter layon ty feavile _ doped te. ' | Jorge no. of maforuty evry and the Aner 9 medion | "Base —> Base layor ia Aughtly oped and the anta af bits Jager is smallest and vert thin . Collector —> Collector faygor is madyiately Aoped Oud the anea of Collector layer th tre gost . | So tht Ub can dipst pate frock query : . TA Modes of cheration y EST cer Mede Uso. Active Amp! uGiox Tonalgg ext] Foncuond Reverse OPP, set: Reverso Rovorse | Cut-off | OFF. Stata Digtial crt Forwcutd Fonwond | Sactration oe ae : With , (Digital eke}fravvyy tort opsrectta n (b- n b) y ‘ tap — Mejonil ‘| eornioys cE: B —P h ease Of qonuwnd blased diode . | ——PThe deplotion hogion fas leon neduecd due to the ‘abpliod bias. A Reowy flow of majoneby camiors from p ton - eB ¢ P—? Minontky | eomins Depletion Reston | = —+ A case of noveise biased dodo , ~y THe daplatfon negion Dy widen . —r Flow of majontly comin is ew . 7? Only minoruby crrnier loud.1 iS Glos of clechins , wud tutnt BET flow tn eppesite ircetiin GOH Sean fram ave te Bd io forwand “biased and eoltecton base Aunetion (cBz).t0 poverse biased; : d ph [tare aorriet Flow Minority eomtien flow CTea) | PA longe nujrbor of rajorul comuions coil diffuse awn the forward biased pn junction into the. — a-typo modtortal , | > Vee Ve Hept longu. thar Vee - <> Aflox diffusion of thaso. rrajonuby corniens (notes) into tho thin base layon some holes recombine oatth electhon | and. some of them ane abthacted by negative teremt nah | OF VEE" ! —y put moodinum numdor af holes flocs ito coltecton Aaytr | onosstng tke never biased Juneton (@@T) canse fn n-type base login the iryocted holes WILL Oppmr as rntnonihy Coney ~y be. the Iyection of Aoler ‘Ineneasos the nurmbtn of vninonthy camnivs in. the. n-type base tazpin . —p The posident foler OF Collecton cn repelled by these holes Nae hoiva present an the collector age i 4 he —ve terminal of Vee .CT —b Jf we conmiden BIT ar a Ainge nodo , fe Sigtle - Ty = fe megonuty * Teo (minonity) ; = Of, + Peo - Nene, J, Te £0 thon, Py = Moy Emiton —> Einihe “te conriors (majerity ). Collecton —y Collects -bhe caxrtors Base —b Base Collects 5% of cantons and tollecton collects 95% of cantensUnw tn apposite direetin | Thoyvestor operation (» p-n) Motor . oforitty eomivrs n F a . Open “TA cose Of Fonwond biased code “PTRE depletion nogion hos boon peduced due to the applied bias. —o # heavy Hous of majonity cormuorg from‘n? | toh’. ie cument flows romp’ tybe tor’ type | n Pp wm | > A case of reverse blased diode —v The doplotion regton. wldan . —y Flow of majority conn ss 2000 . | — Onley vinonuy. wanuvrs Flow . p |y fh EBT Fonwand blased and 20° CBT never Se hole Sow “ a Teno Sele ; oA lange numbin of majontty cannivws (eleetnons) will diftuse actors tie Forward based pn junction into the petypo. (hase) matowal —v Vee ts Ht lag. Han. Vee m7 Abort diffunion. of those majoruty. connturs (electron) into the thin baso Loven rome gleetton hocambine wlth holes ond rome of tiem ano attracted ey the pontive tmniinal of Vee - —p Maximum number of electrons slow into Collector Joy chopstng the neverse—blasod junction. (eBT) cobs in. p-Bype base tayon the injected. Lleekhony toill appear ous minoruhy ecurviony —& he. Snjection of elections mevases tre number of vninontty connioy in the. p-type base lay. . Cleptron, — —S— THD nosident Ge Collector Loyay onre nepelledd by tae quart Alections ond hen elt tho dleelrons puownt in collector lover one attracted. YY v0. S en Of YS{ouminal » of Veo v JF we congo BIT as a nlagl nedo > ny = Tp, + No 2] 0 Te = Te rrojoneky VT minority HATE Tepe OS, Tes To So, Kd g i, Depp =O thon TM HATE i, Te =0 thon Le = Lego [only due fo minonthy corners)_ so or Sine fm epacsite earcebin , Aw Previously Convdleneet Gombonents (R,L,e) { dtede fave “two Lormtnals and can trontfona be chonactenized by tho single nalation sup botwearr tho owrard ing Errvough ond the | voltage QO0SS the two -tenminals . | TA troniston th a de terminal component | domidoud os - a two- port network with an inpud | bont and on outbud—pont - | Each port i zfonmed by ection af too twrrritral ond chonackonized by the rilectiombhebs of both Inbut andl output cunts And voltages ; ty Configuration. modo % | Dopending on which of tie tue tourrinal > wed od common teeminal ,-twu. can bo “thor _pomible configurations Jon the too pont network Formed, by a tranirton . _ 4. Common Emitlor (cE) nut fe opplicd betwen Base and | Emittr ond output L faen from collector and 9. Common Basa (8) | Gnput'\s Opplied between Bose and Einitler ond ouiput th taxen from Case nd @ellecton .3. Common Collector (CO) Onpuk & applied between Base collection and output ta toKen from collector al emittor . = Chonackuuher Curve Tey Common Base configuration © Base 15 Common fon brpuk and output . —> Snbut is applisd between omition and. base —> Output ts taven from emt collecton and base > the Inbut Chonackanintios wilh nolato bind cusent Try to on input Voltage Vag - ond te output chorwetouistios wild polate Output cument Le to output voltage Veg.Ly 90% \ ; 5c k Voag Ter Meer eon7 Ne ! Cea (” o/p Yen=ov ‘ a Odes Mey leo Tey oO Ci ei Hom VBE best -off Veo Veot Teh tet Anpud_chometoriation of tle configuration + “> Roo Kee vhtage Vor t tet ~v Te 15 almost ‘nde pendent of Vea: Buk wlth Inovamont of Vow (say 10%) Le inerases able . = Snot Impedance is vant areul after Knee - Vv Z vokeage - py ane at aComt bm, Outpot chonactaistics of CB confiqurotion : —p dodunatton Vs when EBT— Poncwnd and eps —> Ronwand 50,10 Make CBT >fonward Vee Aboud be ve" —y gr acdurtadion region. wilh the inevament OF Vem , Tq tnerwnses. Veg 1 Te t —p Aelive negioh tb when EBT Forward blased and Cay —> Reverse biased. Sr. ockve pogton ith Yep t Ty is constant cadmost because Te dood not depend on Vip ratheriL depends on Te fe =XTe+ Tego - fe is @ fraction of eméittyr cudront that hoachey eollecton . m_ [TT is a ewent controlled devier . ke ts (contnaled by in inbut _Quoment fel —P In active hagton. the eurnont thal Pioes ‘To’ “i comatant cause the ewrnont’ Hows tol reverse biased junetion }-0 . depletion. hogton. tig and we Know noverse current is almoat constant ifdemp ty comtant). —y Output “impedance. i Songer : tonge change | In Vow Causes a arma ehange in Te. 50 | Yo is very high. Y sd ot constant 2, Cunont Amplfiection. factor of @B comfy wrechion, k= ae at conmbant | Veg). The naif of erorge ‘in Te fo the chapge in Te (0/p vs Vp) - } oS 50:99CE confiqunation + . ut iv applied kotisen Base anck en ce srput ‘1 collecton. O" Oukpot (5 taven from Baxe Coll cation {Il | EBT 15 fonwond diased to mane CBT > Reverse ‘blast “the vokkep att collecton (1 type) shoud be laygvu thon the voltage at base. (p-type) - Vn Ve - 50, Vee should be Lasger tan VBE [Gy Snpul chanactoriztion ¢ (Te V3 Vae ) ot contant WE Tp Veeo Vee, Nv Yeo NCE vee & CE VE a ‘i pode wwe osomblos with a Joncvond biased diede £23 es than CB configuration o —p Ta intrwases Joss rapidly th gh a> pe = ANBE at Ver =conaiant = Fai wiqhen than CB conf Induct Smbodanee ve fb fyyher han CB confi Srp mbeclanee Mf i iow J —p lotth the Lnenoament of Vee the base ¢ doencases loeeause with mane ‘ve voltage at colleck) we ou making to depletion hegtor. wider % mone majonéty canrions will be Atoept Out to te collector region. bofono ingjonihy ecvnuons G@edtren~ hale) : | recombi natfon. cectut ore Any majoreity eevvucor | od abtracted to the base detminal . Spy Output ehorractoreistion ¢ (Te ws Vee). | a Fon saturation, Fort raking EBT > ERT — Forward Vee at least Oty ews = forward thon to make CBI Fortwond Vp=0-Fv Vin, Should be less than do: | % a Ye Ts neater than ae Is Reversed | wor’ EBToromd ‘| eer — Ravorse | thal, uk entors Aho avtive _tygion .Satwration ¢ —P Te vontls with Vee abpphoxtmat thy (Yee =Ov * av). Thon Te to almost constant Active § : —7 Gn oetive nogton cudkh ‘anenaamert of Nee » Be romaine almost conatant . Onuxe CB configuration Te, tnenemses a bit with Vee - — > whon Ig =OLth , small ravose ewnent Flows and in CE ‘confgunakion Bun eumnont fs Knouse ar Tee ° Vv fe = Pie 6 ® oe i i oukpu ‘impadance ‘is Jom than: CB confjration — x eh Gos cust -onpefecten: factor; Pras ov, s Le = common bee PB emitter. currant gain im p72 welg vally (20-509 | pb Used don both cunrent and voktage gat.~ : ~ Ho hu fe an NPN Lransstose pro Porred - i] : ovely PNP tranny lore) Y Ine N-type sileon maltrdal hors hotlex mobility of electrons (han P-type silicon melvrted , ~p the cwmonl gtin jn Ue regenerative proce Increases the huwyh of eloctnons* from Anode bo cathode. hat Loo in prmall interval Of time which jnersases Ure Aliching speed ' —y Mass produation pf aill’cor tnanswntons ound Tes youre manu-factwud us ing N-type, Wf —p (ce) config urabon Is most widely configura . - ton’. NPN js profoved because of negative qneund syplam : —_ Gi ve.