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    ICT - Ajay 07-08 Oxidation

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    The document discusses oxidation of silicon, which is a key process in manufacturing silicon devices. There are various types of oxidation processes including thermal oxidation, wet oxidation, and deposited oxides. Thermal oxidation involves heating silicon wafers in an oxidizing atmosphere like oxygen or steam. Wet oxidation uses steam and grows oxide faster than dry oxidation but can produce more defects. Deposited oxides are used as insulating layers between conductor layers. Oxidation is used for applications like gate oxides, diffusion masks, LOCOS, insulation, and surface passivation.

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    ICT - Ajay 07-08 Oxidation

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    archis.maity.35
    11 views25 pages
    The document discusses oxidation of silicon, which is a key process in manufacturing silicon devices. There are various types of oxidation processes including thermal oxidation, wet oxidation, and deposited oxides. Thermal oxidation involves heating silicon wafers in an oxidizing atmosphere like oxygen or steam. Wet oxidation uses steam and grows oxide faster than dry oxidation but can produce more defects. Deposited oxides are used as insulating layers between conductor layers. Oxidation is used for applications like gate oxides, diffusion masks, LOCOS, insulation, and surface passivation.

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    The document discusses oxidation of silicon, which is a key process in manufacturing silicon devices. There are various types of oxidation processes including thermal oxidation, wet oxidation, and deposited oxides. Thermal oxidation involves heating silicon wafers in an oxidizing atmosphere like oxygen or steam. Wet oxidation uses steam and grows oxide faster than dry oxidation but can produce more defects. Deposited oxides are used as insulating layers between conductor layers. Oxidation is used for applications like gate oxides, diffusion masks, LOCOS, insulation, and surface passivation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views25 pages

    ICT - Ajay 07-08 Oxidation

    Uploaded by

    archis.maity.35
    The document discusses oxidation of silicon, which is a key process in manufacturing silicon devices. There are various types of oxidation processes including thermal oxidation, wet oxidation, and deposited oxides. Thermal oxidation involves heating silicon wafers in an oxidizing atmosphere like oxygen or steam. Wet oxidation uses steam and grows oxide faster than dry oxidation but can produce more defects. Deposited oxides are used as insulating layers between conductor layers. Oxidation is used for applications like gate oxides, diffusion masks, LOCOS, insulation, and surface passivation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 25

    Integrated Circuits

    Technology
    Course No.: EEL7190 Prof. AJAY AGARWAL
    L-T-P [C]: 3–0–0 [3] DR. SWATI RAJPUT
    ELECTRICAL ENGINEERING
    IIT JODHPUR

    Lecture 07 dated 16th Aug. 2023


    Prof Ajay Agarwal
    IC Fabrication Process
    Thin film growth, deposition
    and/ or CMP

    Photolithography

    Etching Ion Implantation

    PR Stripping PR Stripping

    RTA or Diffusion

    Prof Ajay Agarwal


    Oxidation of Silicon - Introduction
    • SiO2 growth is a key process step in manufacturing all Si devices
    • Thick (~1 µm) oxides are used for field oxides (isolate devices from one
    another)
    • Thin gate oxides (~100 Å) control MOS devices
    • Sacrificial layers are grown and removed to clean up surfaces
    • Silicon is consumed as the silicon dioxide is grown
    • Growth occurs in O2 and/or steam at 800 - 1200C
    • ~2 m films are maximum practical
    O2 55%
    SiO2
    45%

    Silicon Silicon
    Prof Ajay Agarwal
    The simplest method of producing a silicon oxide layer
    consists of heating a silicon wafer in an oxidizing atmosphere

    Prof Ajay Agarwal


    Equipment/ techniques of oxidation
    Horizontal Furnace
    Wafers
    Heating Coils

    Quartz
    Tube
    Gas flow

    Temperature Center Zone


    Flat Zone

    Prof Ajay Agarwal Distance


    Equipment/ techniques of oxidation
    Horizontal Furnace

    Prof Ajay Agarwal


    Equipment/ techniques of oxidation
    Vertical Furnace
    Process
    Chamber
    Heaters

    Wafers

    Tower
    Questions/ Discussion

    Prof Ajay Agarwal


    Types of oxidation processes:
    • Thermal Oxidation
    • Low Pressure Oxidation,
    • High Pressure Oxidation
    • Plasma Oxidation
    • RTO, Rapid Thermal Oxidation
    • Anodic Oxidation
    • Oxide Deposition, LPCVD, Sputter, etc.

    Prof Ajay Agarwal


    Types of Oxidation Processes:
    Dry Oxide
    • Pure Dry Oxygen is Employed for Oxidation
    Si + O2 = SiO2
    • Advantages
    • Oxide layers are very uniform.
    • Relatively few defects exist at the oxide-silicon interface (these defects
    interfere with the proper operation of semiconductor devices)
    • It has especially low surface state charges and thus make ideal
    dielectrics for MOS transistors.
    • Disadvantage
    • Dry oxide grows very slowly.

    Prof Ajay Agarwal


    Dry Oxidation

    Oxide thickness versus


    oxidation time for dry
    (O2) oxidation of a (100)
    oriented silicon wafer

    Prof Ajay Agarwal


    Types of Oxidation Processes:
    Wet Oxide:
    • In the same way as dry oxides, but steam is injected
    Si + 2H2O = SiO2 + 2H2 ↑
    • Advantages
    • Wet oxide grows fast.
    • Useful to grow a thick layer of field oxide
    • Disadvantage
    • Hydrogen atoms liberated by the decomposition of the
    water molecules produce imperfections that may degrade
    the oxide quality

    Prof Ajay Agarwal


    Wet Oxidation

    Oxide thickness versus


    oxidation time for wet
    (H2O) oxidation of a
    (100) oriented silicon
    wafer

    Prof Ajay Agarwal


    Integrated Circuits
    Technology
    Course No.: EEL7190 Prof. AJAY AGARWAL
    L-T-P [C]: 3–0–0 [3] DR. SWATI RAJPUT
    ELECTRICAL ENGINEERING
    IIT JODHPUR

    Lecture 08 dated 18th Aug. 2023


    Prof Ajay Agarwal
    Types of Oxidation Processes:
    Deposited Oxides:
    • Frequently employed as an insulator between two layers of
    metallization
    • In such cases, some form of deposited oxide must be used rather
    than the grown oxides
    • Advantages
    • Deposited oxides can be produced by various reactions between
    gaseous silicon compounds & gaseous oxidizers
    • Mainly used as insulating layers between multiple conductor layers,
    or as protective overcoats
    • Disadvantage
    • Possess low densities & large numbers of defect sites.
    • Not suitable for use as gate dielectrics for MOS transistors.
    Prof Ajay Agarwal
    Key Variables in Oxidation
    • Temperature
    • reaction rate
    • solid state diffusion
    • Oxidizing species
    • wet oxidation is much faster than dry oxidation
    • Surface cleanliness
    • metallic contamination can catalyze reaction
    • quality of oxide grown (interface states)

    Prof Ajay Agarwal


    Applications of oxidation in semiconductor
    fabrication

    • Gate oxide
    • Diffusion/ implantation mask
    • Local oxidation of silicon (LOCOS)
    • Insulation
    • Surface passivation
    • Film with low thermal conductivity
    • Sacrificial / Structural layer

    Prof Ajay Agarwal


    Gate Oxide
    G
    S D

    Silicon

    • Very high quality thermal SiO2 required


    • High breakdown strength
    • Extreme uniformity
    • No electrical charges

    Prof Ajay Agarwal


    Diffusion/ Implantation mask
    Dopants

    SiO2
    p
    n- Silicon

    • SiO2 is photo-lithographically patterned on Si


    • Dopant’s diffusivity is low in SiO2 compared to Si
    • Ions stops in SiO2

    Prof Ajay Agarwal


    Local Oxidation of Silicon (LOCOS)
    • LOCOS: localized oxidation of silicon using silicon nitride as a mask against
    thermal oxidation
    • CMOS and BICMOS processes employ LOCOS to grow a thick field oxide
    over electrically inactive regions of the wafer

    Silicon nitride
    SiO2

    Silicon

    Prof Ajay Agarwal


    Insulation

    SiO2
    metal
    SiO2 p
    Si n

    • SiO2 Film should be pinhole free


    • Low breakdown,
    • Low leakage
    • Thermal or deposited

    Prof Ajay Agarwal


    Surface Passivation
    • SiO2 is used for device surface passivation
    mainly:
    • To make Si surface electrically neutral and insensitive
    to atmosphere
    • To protect device surface from scratches

    Prof Ajay Agarwal


    Film with Low Thermal Conductivity
    Structural
    SiO2

    Si n

    • For Sensors applications


    • Si3N4 is also used

    Prof Ajay Agarwal


    Sacrificial / Structural layer
    Cantilever

    SiO2
    Si

    • SiO2 Film should be pinhole free


    • Low breakdown
    • Low leakage
    • Thermal or deposited

    Prof Ajay Agarwal


    Questions/ Discussion

    Prof Ajay Agarwal

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