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AE Part-1

The document discusses semiconductor devices including PN junction diodes and bipolar junction transistors (BJTs). It describes the basic structure and characteristics of diodes and BJTs. It also discusses different configurations of BJTs including common base, common emitter, and common collector. The key aspects of biasing and stability factor for common emitter configuration are explained.

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Aaryan gharat
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0% found this document useful (0 votes)
15 views22 pages

AE Part-1

The document discusses semiconductor devices including PN junction diodes and bipolar junction transistors (BJTs). It describes the basic structure and characteristics of diodes and BJTs. It also discusses different configurations of BJTs including common base, common emitter, and common collector. The key aspects of biasing and stability factor for common emitter configuration are explained.

Uploaded by

Aaryan gharat
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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*Semiíconeluctor Devfcecs

A Simple P N junction levice is a ezample of semi-


consducto dlevice. A PAN juncdion is also knoon as
diodeAs shouon beloo
PN

A diode is a unidirectfona uncontzolled soitch


c t s a s a swltt
|whenevey foroaid bies 1s applied,it
ON,aS shocoD belou.

Alhencve aeveuse bias is applied it adts cs a


SoiHch off.

*BJTs
BipolayJundfon Tsansistox is a 3 Jayeu 3
3euminels cge
Heomina deyice, The nameg o
b a s e . We may have PNP o7
emitte L01le ton and
o BJT
NPN ype

E N
M T WT
Page No.:

YOUVA
Date:

me symbol of NPN s shown beloo.

Prouo is mcked on emitea length ane eliretE


ion aDDN oalways points oom Pto N
J T can be usec as e Switeh or as a amelite
JT Cah be opeucute d into tllowing 3
Contiquratio ns
CB(ommonBase)
2 CE Common emitte)
C c Lommon Collector)
For Ce config uratifon base +esqni na uoill be
made Common tor both the ilP and ole ivuits
m i t t e to bas e cinait uill a cct es a input sid-
where ias collecOrtobase . in cdruut uil act
a S ouutput side.

Ru
u M T W T F
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S S

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Date:

Commnon Base con-figuraion.

y s eis common to both inpd and output. Base ls


USually connected to qaound

V
Base

These 2 chaacteaisticS ceie importa nt


InpLt 7daising oint charateiS HC9
Output or Collector chardcteoisHCS

TnPut charateQiSiCS 20V

6-2-
Coeto n ent tmA

O
M W TFS S
Page No.:
YOUVA
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Common Emitte Con-ttgugatfon


Tn HhiS Contigurationemitey is ¬ommon
toemithee oill fom input cincuj4 whereds
collecto do emitteq cuilPozm outpud drcu+

Vee

25/2
*Inpt charateuisticg Tn this ase input noltuge
VBe oil be taken along - a i s input current
uoill be IB wll be taken olong y-ais. m
hDiteouert cuNes willbe ehawn fordifBerent

Nalueg Vce
Vee10V

V 2 o

30
20
d, Bunit
PageNo.
esS)
YOUVA
Date

Outpud chardteistics. 8
This tve ti-charateaistics uoill be obteine
by plotting graph between Nce and Ic. DHerent
CULa es can be_obtaîned torcifferent vaJue9 T
AS Shown be oup
mA)

6
To- 50AA

Attive Qegicn 19:40


Sohureion. T:30uA

1e: 20A

1B:Oui
10 5 VE

for0rd curent TranstormaHon Ratio ih CE, B


Current aln in CE)
15 T is denote by B Tt is a raho of
OUhput for De CondUHGns
AnputI

cit usually more than400


To
MT w TF_S_S
Page No.:
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For AC Conditions,
has been olcined chan es of co11eo
as

Cuaent (I) toparedto the chanses


s e Curent (I3)

Relauti en betoeen Alpha and Bta


l e Knoo thct,

Mle knbDthat
Ic ID
SubsHtute e n to egn 0 . B

LE Ie (1+B zs)-

Ie
B= (B) (

). c
M TW TFS
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|Date:
YOUVA

*Common Co|lecko Contiquration.

I ts also calleal os emittefolower (E

Vi
yo
RL
o

For Cc contiguratdion baseisinput ond oupud


isemíHteu. ds shown in above dlagram. Tis
e)y used configuaetion: MaSHy itis used ag
o butlea,cind i+ cuso known lds emittey

*De Analysis.
hle hnou that the PJTs can be opeucdted
elth e in satuection or cut-odt or ctive regjon
depending upon he requirements
Heue w e cLe using BITs ueith as a amplihm
So it has to be kept in actiNe reglon, whian n
been studied from olp characteaishcg.To ensu e
ts Opeuaim in achive regten we hanle to proviels
pTOpe biosing to both the jundHns so tha
opecinapoiñt shoule alwajs remain in
c chve region 0peuoing_point is aso kn oon
C ue cent point (Qpoint). 0 point canD
obtuned fom de Joad ban ine
W

PageN No
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Date

Ocoad Hne
Dcdoad Jine can be obtineironm ouhput
charactecuishcs, by epplins kNL o the output
,Joop fon thE cincit 3hoon

Vo
RL

ApplyingKL foY the:collector Joop


Nce ICRc +NCE
TO get the Oc Joad Jne point+ A and ppfnt B
should be obtained. bint andA 28 as shoon în
MA
The gaph A

Nec_IRc+ \lce O
b y oining point A and B
l i n e ootained
The operatinq
knoon as OC Joad Jine. And tne
poin+) i9 the midpo]ntof
his li ne
point (
o i t A can be obtained ou_pdting \CE * O
i n esO
MIW_T
Page No.

Date: YOUVA

Point AIC \cc


Re
To toint can be obteüned loPUTing Ic
i n egn-)
Point B:|Nce Ncd

Phesingircut
5talilty Peutor (s)
Theue coie diffeaent biasing uruHs to keep o
point Stadale on Oc Jooe Jine
*Stabilityfattor is q pouamekeu which deiden
4o uhat Pchent a bíasing method is Sueess
tu
o keep d point stable.
*charnge in Lc s unHen 9t chango in Ico
Nge and
chango in C due to Ohanqe in Tco is Jawge ag
Lompaue to V b cun d B.
So Stulili h S is consid eed cS change in c
outo chánge in Tco, when Veqnd B
Kept Lonstant aue

Deuiuaion tor Staliliby fator (sS)


VeeB onstout
aTco
Por Ce Con-tigutotion Tc 3IS+(I+B)1cD
e u e n t i a e the ab ove eq : + Jc, we q t

1 5 dls + ( 4B) di o
dic
- Pd15 B+ 2

- dis

have bett eA the0m


SShould be smal) to
Stability

Stabilitfauor S and s"

S S deined
S

S 1e
w

(
(D
M T WI F
Page No.
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sel eias or emitteu Bias

Stabiliy fs
o Re. nloo,
improved in nis cirtuit becau se
I c inareases because 0f any
wi1 al so
reasem (emP) o p amSS Re
inureoge, t h s increage in Joltaqe atoes

Re i11 reclute a ag Re is also a paot of


input úrtuit, So ac a t s in control.
Collecor to Base Blas Nee

fbs
M T W T
S
Page No.

Dale: YOUVA

Rels (ommon in both in olp and inilp


Joops

uColle cdor to bage biag with sel biac 0


emitteo bia s.
VL
R

RVTE

5otentio dwides biosing blaging oith mitte


biag.
MT W TFS
|Page No.:
YOUVA
| Date

Ilha is Thevenin's Jheorem


HOLO thevenins equiialent clt Con be obtain
Omaw Dc doacl Jine Bor folooing_Ckt.obtoain the
quescempoint
Veee12v.

Rb
S2K -o Vo

Nin
Rba Re a1 D
2 k

Heuminals
Bppying Thexenins heorem across înpud
Vth 19 given by Rb2 T
2 l 8 6 XO mA
I:Ncc (5200+1240)
Rbi+Rb2
Rth Rb/Rb:RbxRb2
Rbi+Rb2
2
(5200 x 124O0)
(52001240 )
Ool2kA

Vth Rbx 1
1240 X 8 6 x103
2.31
MTW
Page No:

Date
YOUVE
Pthk
LR:330
23v

NDO
applying KVL sto inputdoop (Buse)
Vth Ib. Rth +Nbe t Re abtIC

Ic B. Ib wle know.
Vth Ib. Rth +\be + Re ab| 1tB|
Sy replaúna

Nth Jb. Rth + Nbe + Re IbHB


2:31(Ib.1000) + (0.4) + 100. Ib (101D
Ib 2.31-0.
O0ot\o1O0
Ib :4sAo Amp

IC oo X1: 4Sx1o4
I 0.o15 A

Applying KIL to Ouctput loap (coiled)


MTWTF
|Pago No.
YOUVA
Doto

NcC I c Rc + c e + Re c + I b )
12*6.o145xSD+1oo (o-oius+1u104)

NCE 2 o 145 3 3 0 410o

5.65S
Cvce Ncc CR4Re
o4
To obtain DC load Jine -som kNL equat ion
otpud Joop.
Ncc Re * NCE + Re (ac+ I5)
smallK1c,
by neglecing Tb becaLse it is NCE C
we con find out point A by puetting
obtained by puting Ca 0
And point B can be

Nec* JRc 0 +Re I c


= I c Rc+ Re t O

12 F O o2AA
RcRe 30

IcRc +Re+ NCE


2Ncc

2 NCE
E E 12V.
M
Poge No.:
Dale YOUVA

*B31s Hubid Models.


Ho ac clong Ac analasis we oill Jeaan how
Homodel BIi. This analusis is also known ag
Small signal analysís.
Dsimple Bii amplitier 1s d 2port netoorh. A
Atoo port networh is represented by4 exiteunal
Nlauiables.Tnesè Nauiables are TM T2N2.as
shoon in fiqure

Inpuc to- Two portN outpu


Pot o oeviceH Pot

Heue we wil aSsume 2NauiableS as independent


auiables Which are Ti a1nd N2
he remaining two Nauiables T2 and diare
cependent uouiables3
Noo, le need t0 orite douon equcdionfm each depen
dent vcLoiable n teums of independent ncouiables
hiuI4 hi2N2
T2 h21Iabo2 N2

Now hese hyboid coeidends hu,h12. haj h2


Can be bbtainec as
Ohiu Ihen 2:6 by short
iwting
I olp po) inputimpedonie
hi2 N Klhen Is o
apenduing
b
T2tP Poot) (uniHegs)(reverse)
W

Page o
vOUVA

2 h 21 2 hen 2 -0 (fouavd timentaHo


I unitlesS.

h22
h22 TL When TI:0 (olp cond uctance)(u)
N2 mhb

esen-ed i n madnx
Above 2 equadfons Canbe pr
o m c u : CS snoLon

h th12 a
I2 hn2l I + h22 N2

h bi2 LI|
h2 2

EEE
according to standands poomfcded by
NDLD
hi2 h

h21 ht
h22h6 (b,e 07 wi||
additiona sub-scriet
One more conf igurcdfon us ed
ciccording to
be added con-ffqurcution thege
fon common- emitter
for eg hie hre,
hte "hoe
wil1 be
Psameters w i t t e n a s , f o (E.
wD equations Can be
NoO,
Na2
hi e I i 4 hre
N hoe V2
n t e I1 +
2
M TW TF
PageNo.
YOUVA
Date

bie
b M
beee Ihoe
hre
Vz
o

*Analusis of Tansisto Amplitfer using h


parametes

he *DO qoveunina equadions Nihi I +hr 2

T2h IAhoN2
2 carn be repldced byIL2u)= -I2-2L So
replaung N2 into eouCEH en no. 1

2 2

-h
4ho 2L
2i(Input impedante):

Z hi4 hy Aa 2.

Noldacge acon (A) 2


2

Output Admittante o)
20

N2

o ho -hrh
iRS
M T WT_
Page No.

Date:

yoUVA
UA ransitor fs connecfal in.CE
RLE 1okn and Re ikO find ne contiqugaji
aious
i n inpuut and outpud
impedance.s
GHiNen-H+hi 100
h 2 5 X10-4
h 56
ho 24MA|N

so1A1 =hie 50
I+hoeRRL +25Xro6x 104 -400
Ri hie toe AIRL= loo- 2:5 X10
x 400X1

A AIRL=-40ID
Ri

Dys = Av Ri ooX - 200


Ri+Res
Ats = ARS -400X 20 0
RtR6
Yo hoe -hBe he
hie+RS 25X165ox26X10 1.9.0Xld-
21D0

19ouAN
Zd 6

19 52-6 K

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