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Assignment 2

This document provides instructions for Assignment 2 of the Semiconductor Devices course. It lists 11 problems to solve related to semiconductor materials and devices. Students are instructed to show their work, include their name and student ID, scan their work as a single PDF file named with their ID, and submit it before the due date to avoid penalties. Late or incomplete assignments will be penalized.

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Ananya Sinha
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
63 views

Assignment 2

This document provides instructions for Assignment 2 of the Semiconductor Devices course. It lists 11 problems to solve related to semiconductor materials and devices. Students are instructed to show their work, include their name and student ID, scan their work as a single PDF file named with their ID, and submit it before the due date to avoid penalties. Late or incomplete assignments will be penalized.

Uploaded by

Ananya Sinha
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Semiconductor Devices (EC3001)

Assignment 2
Instruction: Assignment should be written on white blank pages. Each page should carry your
Roll No. and Name. After completing the assignment, all your solution pages should be scanned
and converted to a single pdf and uploaded in the assignment section. The pdf should be named
“RollNO_Name.pdf.” Assignment should be submitted before the due date. Otherwise, a penalty
will be imposed. Marks in the assignment will be counted for final evaluation.

1. Determine the total number (#/cm3 ) of energy states in silicon between Ev and (Ev-3kBT) at
(i) T = 300 K and (ii) T = 400 K. (Consider mp* = 0.56 m0) (2 marks)
2. Two semiconductor materials have exactly the same properties, except material A has a
bandgap energy of 0.90 eV and material B has a bandgap energy of 1.10 eV. Determine the
ratio of ni of material B to that of material A for (a) T = 200 K, (b) T = 300 K, and (c) T =
400 K. (3 marks)
3. The electron concentration in silicon at T = 300 K is n0 = 2x105 cm3. (a) Determine the
position of the Fermi level with respect to the valence band energy level. (b) Determine p0.
(c) Is this n- or p-type material? (Take Nc = 2.8x1019 cm-3 and Eg(Si) = 1.12 eV at T = 300
K) (5 marks)
4. The Fermi energy level in silicon at T = 300 K is 0.22 eV above the intrinsic Fermi level.
Determine n0 and p0. (2 marks)
5. (a) Determine the position of the Fermi energy level with respect to the intrinsic Fermi level
in silicon at T = 300 K that is doped with boron atoms at a concentration of Na = 2x1016 cm-
3. (b) Repeat part (a) if the silicon is doped with phosphorus atoms at a concentration of N =
d
16 -3
2x10 cm . (c) Calculate n0 and p0 in parts (a) and (b). (2 marks)
6. (a) 3V is applied across a 1-cm-long semiconductor bar. The average electron drift velocity
is 104 cm/s. Find the electron mobility. (b) If the electron mobility in part (a) were 800 cm2
/V-s, what is the average electron drift velocity? (2 marks)
7. Consider three samples of silicon at T = 300 K. The n-type sample is doped with arsenic
atoms to a concentration of Nd = 5x1016 cm-3. The p-type sample is doped with boron atoms
to a concentration of Na = 2x1016 cm-3. The compensated sample is doped with both the
donors and acceptors described in the n-type and p-type samples. (a) Find the equilibrium
electron and hole concentrations in each sample, (b) determine the majority carrier mobility
in each sample, (c) calculate the conductivity of each sample, (d) and determine the electric
field required in each sample to induce a drift current density of J = 120 A/cm2. (5 marks)
8. Three scattering mechanisms are present in a particular semiconductor material. If only the
first scattering mechanism were present, the mobility would be µ1 = 2000 cm2 /V-s, if only
the second mechanism were present, the mobility would be µ2 = 1500 cm2 /V-s, and if only
the third mechanism were present, the mobility would be µ3 = 500 cm2 /V-s. What is net
mobility? (1 marks)
9. The hole concentration in p-type GaAs is given by p(x) = 1016(1+x/L)2 cm-3 for -L ≤ x ≤0
where L = 12 µm. The hole diffusion coefficient is Dp = 10 cm2 /s. Calculate the hole
diffusion current density at (a) x = 0, (b) x = -6 µm, and (c) x = -12 µm. (3 marks)
Semiconductor Devices (EC3001)
Assignment 2
10. Consider an extrinsic semiconductor slab of thickness 2µm with a doping density of 1017 cm-
3. The saturation velocity of the semiconductor is estimated to be 30kV/cm. The voltage

applied across the slab is varied from 0V to 10V. Draw the drift velocity variation with
applied voltage at the proper level. (take µn =1350 cm2/V.s) (2 marks)
11. An n-type silicon semiconductor, doped at Nd = 4x1016 cm-3, is steadily illuminated such that
g = 2x1021cm-3s-1. Assume τn0 =10-6s and τp0 = 5x10-7s. (a) Determine the thermal-
equilibrium value of EF - EFi. (b) Calculate the quasi-Fermi levels for electrons and holes
with respect to EFi. (c) What is the difference (in eV) between EFn and EF? (3 marks)

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