ESC IV: Introduction to Electronics

and Electrical Engineering

Unit 1
Semiconductor Devices and
Applications
Lecture 4
Reference book :
1. Electronic Devices and Circuit Theory-Robert L. Boylestad, Louis Nashelsky, 9Ed,2008 PE.
2. Microelectric Circuits-Sedra and Smith-5 Ed., 2009, Oxford University press
Introduction (FET)
• Field-effect transistor (FET) are important
devices such as BJTs
• Also used as amplifier and logic switches
• What is the difference between JFET and
BJT?
BJT is Current-controlled
FET is Voltage-controlled
• The primary difference between the two types of transistors is the
fact that the BJT transistor is a current-controlled device, while the
JFET transistor is a voltage-controlled device.
• In other words, the current Ic in BJT is a direct function of the level of
Ib. For the FET the current I will be a function of the voltage VGS
applied to the input circuit.
• In each case the current of the output circuit is being controlled by a
parameter of the input circuit—in one case a current level and in the
other an applied voltage.
Why the name “FET”
For the FET an electric field is established by the charges present that
will control the conduction path of the output circuit without the need
for direct contact between the controlling and controlled quantities.
Introduction.. (Advantages of FET over
BJT)
• High input impedance (MΩ)
(Linear AC amplifier system)
• Temperature stable than BJT
• Smaller than BJT
• Can be fabricated with fewer processing
• BJT is bipolar – conduction both hole and
electron
• FET is unipolar – uses only one type of current
carrier
• Less noise compare to BJT
• Usually use as an Amplifier and logic switch
Types of Field Effect Transistors (The Classification)
n-Channel JFET
FET JFET
p-Channel
JFET
MOSFET (IGFET)

Enhancement Depletion
MOSFET MOSFET

n-Channel p-Channel n-Channel p-Channel

EMOSFET EMOSFET DMOSFET DMOSFET
 MOSFET
[ METAL-OXIDE SEMICONDUCTOR FIELD
EFFECT TRANSISTOR ]
 MOSFET

There are 2 types of MOSFET’s:

• Depletion mode MOSFET (D-MOSFET)

• Enhancement Mode MOSFET (E-MOSFET)
 DEPLETION MODE MOSFET CONSTRUCTION

• The Drain (D) and Source (S) leads connect to the to n-doped regions
•These N-doped regions are connected by an n-channel
•This n-channel is connected to the Gate (G) via a thin insulating layer of SiO2
•The n-doped material lies on a p-doped substrate that may have an additional terminal connection called SS
Basic Operation and Characteristics
 BASIC OPERATION

D-MOSFET may be biased to operate in two

modes:
•The Depletion mode or The Enhancement mode
For this reason the region of positive gate
voltages on the drain or transfer characteristics
is often referred to as the enhancement region,
with the region between cutoff and the
saturation level of IDSS referred to as the
depletion region.
D-MOSFET
DEPLETION MODE
OPERATION
The transfer characteristics are
similar to the JFET In Depletion
Mode operation:
• When VGS = 0V, ID = IDSS
• When VGS < 0V, ID < IDSS
• When VGS > 0V, ID > IDSS
The formula used to plot the
2
Transfer Curve, is: ⎛ V ⎞ GS
⎟
⎜⎝ VP ⎠
I =I
D 1-
DSS
 p-Channel Depletion Mode
MOSFET

The p-channel Depletion mode MOSFET is similar to the n-channel except that
the voltage polarities and current directions are reversed
D-MOSFET Symbols
ENHANCEMENT MODE
MOSFET
• Although there are some similarities in construction and mode of
operation between depletion-type and enhancement-type MOSFETs,
the characteristics of the enhancement- type MOSFET are quite
different from anything obtained thus far.
• The transfer curve is not defined by Shockley’s equation
• The drain current is now cut off until the gate-to-source voltage
reaches a specific magnitude.
• In particular, current control in an n-channel device is now effected by
a positive gate-to-source voltage rather than the range of negative
voltages encountered for n-channel JFETs and n-channel
depletion-type MOSFETs.
The primary difference between the construction of depletion-type
and enhancement-type MOSFETs—the absence of a channel as a
constructed component of the device
n-Channel E-MOSFET showing channel length L and channel
width W
 Enhancement Mode MOSFET
Construction

• The Drain (D) and Source (S) connect to the to n-doped regions
• These n-doped regions are not connected via an n-channel without an external voltage
• The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2 The n-doped material lies
on a p-doped substrate that may have an additional terminal connection called SS
• If VGS is set at 0 V and a voltage applied between the drain and source
of the device, the absence of an n-channel (with its generous number
of free carriers) will result in a current of effectively zero amperes
When Both VDS and VGS have been set at some positive voltage greater than
0 V, establishing the drain and gate at a positive potential with respect to the source.
The positive potential at the gate will pressure the holes (since like charges repel) in
the p-substrate along the edge of the SiO2 layer to leave the area and enter deeper regions
of the p-substrate, as shown in the figure. The result is a depletion region near
the SiO2 insulating layer void of holes. However, the electrons in the p-substrate (the
minority carriers of the material) will be attracted to the positive gate and accumulate
in the region near the surface of the SiO2 layer. The SiO2 layer and its insulating
qualities will prevent the negative carriers from being absorbed at the gate terminal.
•As VGS increases in magnitude, the concentration of electrons
near the SiO2 surface increases until eventually the induced
n-type region can support a measurable flow between drain
and source.
•The level of VGS that results in the significant increase in drain
current is called the threshold voltage and is given the symbol
VT.
Channel formation
in the n-channel
enhancement type
MOSFET.
• Since the channel is nonexistent with VGS = 0 V and “enhanced” by
the application of a positive gate-to-source voltage, this type of
MOSFET is called an enhancement-type MOSFET
• As VGS is increased beyond the threshold level, the density of free carriers in
the induced channel will increase, resulting in an increased level of drain
current.
• However, if we hold VGS constant and increase the level of VDS, the drain
current will eventually reach a saturation level.
• The leveling off of ID is due to a pinching-off process depicted by the narrower
channel at the drain end of the induced channel.
 Basic Operation
The Enhancement mode MOSFET only operates in the enhancement mode.

VGS is always positive

IDSS = 0 when VGS < VT
As VGS increases above VT, ID increases
If VGS is kept constant and VDS is increased, then ID saturates (IDSS)
The saturation level, VDSsat is reached.
p-Channel Enhancement Mode MOSFETs
The p-channel Enhancement mode MOSFET is similar to the n-channel except
that the voltage polarities and current directions are reversed.
• For values of VGS less than the threshold level, the drain current of
an enhancement-type MOSFET is 0 mA.

2
• ID = k(VGS - VT)
E-MOSFET Symbols