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Chapter (2) Part (1) (PN Junction Diode)

The document summarizes key concepts about PN junction diodes: - A PN junction forms when a P-type and N-type semiconductor meet. It allows current to flow easily in one direction but blocks it in the other, rectifying current. - The current and voltage in a diode are related by an equation. An analogy is that a diode acts like a valve controlling liquid flow. - At no bias, electron diffusion leaves a depletion region of ionized atoms. This built-in electric field balances diffusion, stopping current. - Forward bias lowers the depletion width while reverse bias widens it, altering the electric field and current flow. Energy band diagrams illustrate these changes.

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Ahmed Saleh
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100 views20 pages

Chapter (2) Part (1) (PN Junction Diode)

The document summarizes key concepts about PN junction diodes: - A PN junction forms when a P-type and N-type semiconductor meet. It allows current to flow easily in one direction but blocks it in the other, rectifying current. - The current and voltage in a diode are related by an equation. An analogy is that a diode acts like a valve controlling liquid flow. - At no bias, electron diffusion leaves a depletion region of ionized atoms. This built-in electric field balances diffusion, stopping current. - Forward bias lowers the depletion width while reverse bias widens it, altering the electric field and current flow. Energy band diagrams illustrate these changes.

Uploaded by

Ahmed Saleh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Chapter 2

PN Junction Diode

Prof. Mohamed Abouelatta


Electronics & Communications
Engineering Department
➢ A PN junction is formed when a P-type and an N-type semiconductor
are in contact.

➢ The PN junction presents the following property: It allows current flow


in one bias direction, but not in the other bias direction. Hence it rectifies
the current.

➢ The applied voltage, Va,is positive if the potential applied to the P-side
is higher than that on the N-side.
➢ The current in a PN junction, I, obeys the following equation:

➢ An analogy of the diode is a valve which controls liquid flow.


Unbiased PN Junction

is called the built-in junction potential


Carrier distribution at no bias
ppo
nno

ni

pno

npo

-lpo 0 lno

nno x pno = ppo x npo = ni2


Depletion region
➢ When electrons diffuse from the N-type region into the P-type material,
they "leave behind" the ionized donor atoms they originated from.

➢ The positive charge in the depletion region attracts electrons such that
at equilibrium, the force of diffusion pushing electrons into the P-type
region is exactly balanced by the force of the built-in electric field that
"recalls" the electrons back into the N-type region. The same for holes.

JN + J P = 0

JN = J P = 0
➢ There are several names for the
depletion region located around
the metallurgical junction; it can
be called the "depletion region",
the "space-charge region" or the
"transition region".
Starting with JN = JP = 0, Find Φo
Step PN Junction
By using Poisson’s equation,

and

✓ It can be simplified by using the


"depletion approximation".
✓ The depletion approximation assumes
that the space charge is composed only of
ionized doping impurities,

(1)

is the charge density


(2)

(3)

The electric field is continuous at x=0,

(4)

❑ Charge neutrality in the device it states that the total negative


charge in the depletion region on the N-side of the junction, is equal,
in absolute value, to the total positive charge on the P-side.
➢ The potential distribution is obtained by integrating the Poisson’s
equation a second time.

➢ In the P-type and N-type quasi-neutral regions, the potentials are


and respectively.

(5)

(6)
The potential is a continuous function at x=0,

(7)

The electric field has a single maximum value at x=0,

(8)
Using Expressions (4) and (7) the width of the depletion regions,
and can be expressed as a function of the junction potential,

The sum of the depletion regions is called the "transition region width "
or " depletion width "

Wdo=

Comment: In a strongly asymmetrical junction( P+N), the width of


the transition region is virtually equal to the width of the depletion
region with the lowest doping concentration.
Example:

Solution:
Biased PN Junction

No bias Va = 0

Forward bias Va > 0

Reverse bias Va < 0


Electric Field under different biasing conditions

-lpo lno

Va>0

Va<0

Emax

1
 o − Va = .Wd .Emax
2
Carrier distribution at Forward- bias

ppo
nno

ni

pno

npo

-lp 0 ln
Carrier distribution at Reverse-bias

ppo
nno

ni

pno

npo

-lp 0 ln
The potential across the transition region is,

The width of the depletion regions are,

The total width of the transition region is equal to,

Wd =

Comment: The width of the transition region decreases with


forward bias and increases with reverse bias.
Carrier distributions in all bias conditions

ppo
nno

ni

pno

npo

x
0
Energy band diagrams

1 No bias

qΦo
Ec
EF
Ei

Ev

2 Forward bias
Va=Vf q(Φo-Vf)
Ec
EFN
qV f
EFP Ei

Ev
3 Reverse bias
Va= -Vr

q(Φo+Vr)
EFP

qVr Ec
EFN
Ei

Ev

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