Module -1

1. With a neat diagram explain the formation of different energy levels in silicon atom function of inter
atomic spacing.
2. Explain the different bonding forces in solids with examples
3. State Pauli exclusion principle
4. Explain energy bands of metals, insulators and semiconductors
5. Discuss the band structure of metals, semiconductors and insulators. How does this relate to their
electrical properties.
6. What are direct and indirect semiconductors. Which semiconductors are preferred to make LEDs?
7. Develop electron energy versus momentum curves (E-k diagram) in a single-crystal
material, which yields the concept of direct and indirect bandgap semiconductor materials
8. What are intrinsic and extrinsic semiconductors?
9. Discuss the generation of Electron Hole pairs (EHPs) in intrinsic semiconductors.
10. Describe the formation of the n-type and p-type semiconductor material by adding impurities from
column V and III in periodic table.
11. What are amphoteric impurities?
12. Define and describe the characteristics of carrier mobility.
13. What is the effect of temperature and doping on mobility?
14. Describe the mechanism of carrier drift current due to an applied electric field.
15. Derive the expression for the current density of a conductor in terms of the conductivity and
applied electric field.
16. Explain the classification of materials base on conductivity and energy band diagram.
17. Discuss and analyze the Hall effect in a semiconductor material.
Or
What is Hall Effect? Derive the expression for finding the carrier concentration of a
semiconductor from Hall voltage

Module -2

1. Draw the charge density and electric field distribution within the transition region of a PN
Junction with Nd<Na . Label all the details.
2. An abrupt Si p-n junction (A = 10-4 cm2) has the following properties at 300 K:
p side n side
Na = 1017 cm-3 Nd = 1015
τn = 0.1 μs τp = 10 μs
μp = 200 cm2 /V-s μn = 1300
μn = 700 μp = 450
The junction is forward biased by 0.5 V. What is the forward current?
What is the current at a reverse bias of −0.5 V?
3. Define drift and diffusion current.
4. Derive Ideal diode equation with I-V characteristics of a p-n junction.
5. Explain Zener breakdown and Avalanche breakdown.
 6. Explain the break down mechanisms occurred in abrupt PN junctions.
7. What is the depletion capacitance of a PN junction? Explain its variation with reverse bias
voltage.
8. Draw the electron and hole component of current in a forward biased PN junction. Given that
Nd<Na.
9. Derive the expression n0p0= ni2from fundamentals.
10. Draw the energy band diagrams of a pn junction when it is: (i) Under equilibrium, (ii)
Forward biased, (iii) Reverse biased.
11. What is the difference between depletion and diffusion capacitance in a diode? Which one
dominates in the forward bias?
12. What are the assumptions taken for the derivation of the general form of diode equation?
13. Explain the reasons for the following:
i) In the energy band diagrams of PN junction, energy levels move up for forward bias and
move down for reverse bias.
ii) The forward I-V characteristics of Ge diode, Si- diode and GA-As diodes are different from
each other.
14. An abrupt p+-n junction is formed in Si with a donor doping of Nd = 1015 cm-3. What is the
depletion region thickness W just prior to avalanche breakdown?
15. Write a short note on operation of solar cells.
16. Explain the working principle of a p-i-n photodiode.
17. Explain photo-voltaic effect with energy band diagrams.
18. Draw the I-V characteristics of a photo-diode and explain its operation in all the three
quadrants.
19. With help of energy band diagram explain doping level in extrinsic semiconductor at 0k &
50k
20. Discuss the piece wise linear approximation of junction diode under ideal condition.

Module -3

Module -4

1. Differentiate between JFET and BJT

2. Compare JFET and MOSFET
3. Deduce the drain current equation of JFET.
4. Define Trans conductance gm.
5. Draw the drain source characteristics of JFET and classify the three regions that are
present.
6. Examine why Depletion MOSFET is commonly known as “Normally-ON” MOSFET?
7. Differentiate between current voltage relationship of N channel and P channel
MOSFET.
8. Elaborate Channel length modulation.
9. Describe with suitable sketches the operation and characteristics of the n channel
Enhancement type MOSFET.
10. Compare n-channel MOSFET & p-channel MOSFET

Module -5
1. Explain the steps of fabrication of p-n junctions with diagrams.
2. Explain the operations of thermal oxidation, diffusion and rapid thermal processing.
3. Explain the process of ion implantation.
4. Explain the process of chemical vapour deposition.
5. Explain the process of photolithography and etching.
6. Explain what is linear or digital IC and monolithic or hybrid IC according to fabrication.
7. Write a note on evolution of integrated circuits.
8. Explain self-aligned twin well process for CMOS fabrication.
9. Explain the fabrication steps for n-channel MOSFET in p-well.
10. Explain the operation of buried channel MOSFET.
11. Explain the process of integration for diodes, resistors, capacitors, inductors, contacts and
interconnections.
12. What r different types of IC’s and its advantages.