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4.2 Electronic Devices

The document discusses several electronic components including diodes, transistors, thyristors, triacs, LEDs, and integrated circuits. It provides information on their symbols, construction, working principles, and specifications. Diodes can be used for rectification and regulation. Transistors allow current amplification through injection and drift of charge carriers across the base-collector junction. Thyristors and triacs are bidirectional semiconductor devices that can conduct current in both directions.

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Aalu Yadav
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47 views30 pages

4.2 Electronic Devices

The document discusses several electronic components including diodes, transistors, thyristors, triacs, LEDs, and integrated circuits. It provides information on their symbols, construction, working principles, and specifications. Diodes can be used for rectification and regulation. Transistors allow current amplification through injection and drift of charge carriers across the base-collector junction. Thyristors and triacs are bidirectional semiconductor devices that can conduct current in both directions.

Uploaded by

Aalu Yadav
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INTRODUCTION TO

ELECTRICAL AND ELECTRONICS


ENGINEERING

Unit-4 / Part-2
Electronic Components
Diode
Symbol

Diodes can be used as rectifiers, signal limiters, voltage regulators, switches,


signal modulators, signal mixers, signal demodulators, and oscillators. The
fundamental property of a diode is its tendency to conduct electric current in
only one direction.
Datasheet Specifications
Transistor
BJT working

Collector
Base

Emitter
Theory
• During normal operation, a potential is applied across
the base/emitter junction so that the base is
approximately 0.6v more positive than the emitter, this
makes the base/emitter junction forward biased.

• A much higher potential is applied across the


base/collector junction with a relatively high positive
voltage applied to the collector, so that the
base/collector junction is heavily reverse biased. This
makes the depletion layer between base and collector
quite wide once power is applied.
Theory contd…
• the collector is made up of mainly heavily doped,
low resistivity material with a thin layer of lightly
doped, high resistivity material next to the
base/collector junction.
• most of the voltage between collector and base is
developed across this thin high resistivity layer,
creating a high voltage gradient near the collector
base junction.
Theory contd…
• When the base emitter junction is forward biased,
a small current will flow into the base. Therefore
holes are injected into the P type material. These
holes attract electrons across the forward biased
base/emitter junction to combine with the holes.
• However, because the emitter region is heavily
doped, many more electrons cross into the P type
base region than are able to combine with the
available holes.
Theory contd…
• This means there is a large concentration of
electrons in the base region and most of these
electrons are swept straight through the very thin
base, and into the base/collector depletion layer.
• More number of electrons come under the
influence of the strong electric field across the
base/collector junction
Theory contd…
• This field is so strong due to the large potential
gradient in the collector material mentioned earlier,
that the electrons are swept across the depletion
layer and into the collector material, and so
towards the collector terminal.
• Varying the current flowing into the base, affects
the number of electrons attracted from the emitter.
In this way very small changes in base current
cause very large changes in the current flowing
from emitter to collector, so current amplification is
taking place.
First BJT
Symbols
Specifications
Thyristor
Thyristor (SCR)
• Thyristor is a four layer, three terminal, minority
carrier semi-controlled device. It can be turned on
by a current signal but can not be turned off
without interrupting the main current.
• General Electric introduced the first commercial
Silicon Controlled Rectifier in 1957 with continuous
current rating of 25A and a blocking voltage of
300V.
• At present, high power light triggered thyristors
with continuous current rating of 4 kA and a
blocking voltage of 6 kV.
Thyristor construction
Symbol & Characteristics of a
Thyristor
Triac
Triac
• The Triac is a member of the thyristor family. It is a
bidirectional semi-controlled device
• Triac can conduct in both directions. (anti parallel)
connected thyristosr but with only three terminals.
• The gate looses control over conduction once the
triac is turned on. The triac turns off only when the
current through the main terminals become zero.
• Applications: lamp dimmers, heater control and for
speed control of small single phase series and
induction motors.
Triac construction

(a) Circuit symbol (b) Schematic construction.


LED
Symbol
• The non-linear characteristics of LEDs can be
expressed in the form of an exponential
function as given

iLED
𝑞.𝑣𝐿𝐸𝐷
𝑖𝐿𝐸𝐷 = 𝐼𝑆𝑎𝑡 𝑒 𝑘.𝑇 −1
A K

Where,𝑣𝐿𝐸𝐷 LED terminal voltage; VLED


𝑖𝐿𝐸𝐷 Forward current;
𝐼𝑆𝑎𝑡 Saturation current of LEDs;
𝑞 Magnitude of the electron charge (= 1.602 × 10−19 );
𝑘 Boltzmann’s constant (=1.38 × 10−23)
𝑇 Absolute temperature (= 273 +𝑇𝑎 )
𝑇𝑎 Ambient temperature
Specifications of white LED
Integrated Circuit (IC Chip)
• An integrated circuit, or IC, is small chip that can function as
an amplifier, oscillator, timer, microprocessor, or even
computer memory.
• An IC is a small wafer, usually made of silicon, that can hold
anywhere from hundreds to millions of transistors, resistors,
and capacitors.
29
End of Part-2

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