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2 SD 424

The 2SD424 is a silicon NPN power transistor designed for power amplifier, DC-DC converter, and regulator applications. It has a high power dissipation of 150W at a junction temperature of 25°C and a high collector-emitter breakdown voltage of 180V minimum. It also exhibits minimum lot-to-lot variations for robust performance. The transistor has absolute maximum ratings including a collector current of 15A continuous and collector power dissipation of 150W at a junction temperature of 25°C. It has electrical characteristics such as a DC current gain of 40-140 and a current-gain bandwidth product of 5MHz minimum.

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Ruben David Ibañez Retamal
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103 views2 pages

2 SD 424

The 2SD424 is a silicon NPN power transistor designed for power amplifier, DC-DC converter, and regulator applications. It has a high power dissipation of 150W at a junction temperature of 25°C and a high collector-emitter breakdown voltage of 180V minimum. It also exhibits minimum lot-to-lot variations for robust performance. The transistor has absolute maximum ratings including a collector current of 15A continuous and collector power dissipation of 150W at a junction temperature of 25°C. It has electrical characteristics such as a DC current gain of 40-140 and a current-gain bandwidth product of 5MHz minimum.

Uploaded by

Ruben David Ibañez Retamal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor 2SD424

DESCRIPTION
·High Power Dissipation-
: PC= 150W@TC= 25℃
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min)
·Complement to Type 2SB554
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for power amplifier ,DC-DC converter and regulator
applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 180 V

VCEO Collector-Emitter Voltage 180 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 15 A

IB Base Current-Continuous 1.5 A

PC Collector Power Dissipation @TC=25℃ 150 W

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SD424

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB= 0 180 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 3.0 V

VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V 2.5 V

ICBO Collector Cutoff Current VCB= 90V; IE= 0 0.1 mA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA

hFE DC Current Gain IC= 2A ; VCE= 5V 40 140

fT Current-Gain—Bandwidth Product IC= 2A ; VCE= 5V 5 MHz

COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 300 pF

 hFE Classifications

R O

40-80 70-140

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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