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The document discusses parameters and characteristics of MOSFETs and BJTs. It provides details on MOSFET parameters such as drain-source breakdown voltage, threshold voltage, RDS(ON), and turn on/off times. It also lists BJT parameters like VCBO, VCEO, power dissipation, current gain β, and other timing parameters. The document explains that MOSFETs have faster switching speeds than BJTs due to lower input capacitance and no minority carrier storage effects. It includes exercises analyzing MOSFET input/output characteristics and comparing experimental switching times of MOSFETs and BJTs to datasheet specifications.

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66 views7 pages

PDF 23

The document discusses parameters and characteristics of MOSFETs and BJTs. It provides details on MOSFET parameters such as drain-source breakdown voltage, threshold voltage, RDS(ON), and turn on/off times. It also lists BJT parameters like VCBO, VCEO, power dissipation, current gain β, and other timing parameters. The document explains that MOSFETs have faster switching speeds than BJTs due to lower input capacitance and no minority carrier storage effects. It includes exercises analyzing MOSFET input/output characteristics and comparing experimental switching times of MOSFETs and BJTs to datasheet specifications.

Uploaded by

Jimmy Macharia
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INSTITUTION: JOMO KENYATTA UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

COLLEGE: ENGINEERING AND TECHNOLOGY


SCHOOL: ELECTRICAL, ELECTRONICS AND INFORMATION ENGINEERING

COURSE: BSc ELECTRICAL AND ELECTRONICS ENGINEERING


UNIT NAME: PHYSICAL ELECTRONICS 1
UNIT CODE: EEE 2212
LECTURER: ENG. NGOCHO

NAME: THOMAS MAINA NJUKI


REG NO: ENE211-0204/2021
TITLE: MOSFET AND BJT - DC OPERATION AND SWITCHING APPLICATION
PREPARATION

MOSFET Parameters

1 (a) Drain –Source Breakdown Voltage = 60V minimum


It is the maximum voltage that can be applied between the drain and source terminals before the
MOSFET enters into breakdown region and starts conducting significant current.
(b) Threshold voltage = 0.8V min 2.1V typical 3V max
It is the minimum voltage that must be applied to the gate terminal with respect to the source
terminal to create a conducting channel between the source and drain terminals.
(c) RDS(ON) = 1.2Ω typical 5Ω max
It refers to the resistance between the drain and source terminals when the MOSFET is in the on-
state.
(d)Turn ON time and Turn OFF time =10ns max
The turn-on time of a MOSFET is the time required for the MOSFET to transition from its off-
state to its on-state.
The turn-off time of a MOSFET is the time required for the MOSFET to transition from its on-state
to its off-state.

BJT Parameters
2(a) VCBO = 60V
It refers to the maximum voltage that can be applied between the collector and base terminals of the
BJT with the emitter terminal open, without causing breakdown or damage to the device.

(b) VCEO = 30V


It refers to the maximum voltage that can be applied between the collector and emitter terminals of
the BJT with the base terminal open, without causing breakdown or damage to the device

(c) Maximum Power Dissipation = 625mW


It refers to the maximum amount of power that the BJT can safely dissipate without exceeding its
maximum junction temperature and causing damage or thermal runaway.

(d) DC β = 100 when Ic=150mA


DC current gain is defined as the ratio of the collector current to the base current in a BJT in the DC
operating region.

(e)tr = 25ns
Rise time refers to the time taken for the output voltage of the transistor to rise from a specified low
value to a specified high value.

(f) td = 10ns
Delay time refers to the time taken for the output voltage of the transistor to reach a specified value
after the input voltage has reached a specified value.

(g)ts = 200ns
Storage time refers to the time taken for the transistor to switch off completely after the base current
has been removed.

(h) tf = 60ns
Fall time refers to the time taken for the output voltage of the transistor to fall from a specified high
value to a specified low value.

(i)fT = 250MHz
Transition frequency refers to the frequency at which the current gain of the transistor starts to
decrease rapidly with increasing frequency.

(3) MOSFETs have faster switching times than BJTs


The switching speed of BJTs is limited by their high input capacitance and their minority carrier
storage time. When the base current of a BJT is turned off, the excess minority carriers in the base region
take a certain amount of time to recombine with the majority carriers. During this time, the transistor
remains in the on state and can conduct current, which can lead to cross-talk, distortion, and other
undesirable effects in circuits.

(7)(a) The band gap of the LED's material is larger, and thus, requires a higher voltage to overcome the
energy barrier and allow current to flow.
(b)(i)The transistor is in active since VBE is greater than VT (0.7V for most transistors)
(ii) VB = VBB – IB* RB
VB = 5 – IB * 220
IB = (VBB – VBE) / RB IB = (5 - 0.7) / 220 IB = 0.020A or 20mA
IC = β * IB = 150 * 0.020 = 3mA
ILED = (VCC – VCE – VLED) / RC = (5 - 0.2 - 1.5) / 4700 = 0.000664A or 0.664mA
(iii) IB = (VBB – VBE) / RB = (5 - 0.7) / 220 IB = 0.020A or 20mA
IC = β * IB = 75 * 0.020 = 1.5mA
IL = (VCC – VCE – VLED) / RC = (5 - 0.2 - 1.5) / 4700 = 0.000664A or 0.664mA
EXERCISE 2: MOSFET CHARACTERISTICS
RESULT ANALYSIS

(1) Does the MOSFET have input characteristics? Explain

Yes. The input characteristics of a MOSFET refer to the relationship between the gate-to-source
voltage (VGS) and the corresponding drain-to-source current (IDS) when the MOSFET is in the
saturation region.

(2) The input characteristics show the same drain current for the three values of VDS at low
values of VGS. Why do the curves separate at high values of VGS?

At high values of VGS, the curves for different values of VDS separate because the voltage drop
across the channel becomes a significant factor in determining the drain current. This voltage drop
causes the effective gate-to-source voltage to decrease, which reduces the strength of the electric field
in the channel and lowers the drain current.

(3) On each of the output characteristic curves, plot the point at which VDS = VGS – Vth. Plot a
graph to join the points. What does it signify?

The significance of the pinch-off line is that it determines the maximum drain current (ID,max)
that can flow through the MOSFET for a given gate-to-source voltage (VGS).

EXERCISE 3(a)
EXERCISE 3(b)
Result analysis

1.MOSFET
a.Estimate the turn on and turn off time

Turn off time=20.5 microseconds

Turn on time = 20.0 microseconds

b.how does it compare with the value from the data sheet?

The experimental value is higher than the one on data sheet.

2.For the BJT exercise 3(b):

a.Estimate the turn on time and turn off time .

Turn on time = 19.975 micro seconds

Turn off time = 20.7 microseconds

b.How does it compare with the value from the datasheet?

BJT has a higher turn on and turn off time as compared to the one on data sheet.

How does the turn off time compare with that of the MOSFET?

Turn off time in a MOSFET is higher than BJT’s.

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