Constant Current Source - BJT

A current generator ensures the desired current when the load varies
I0 1
1
I R L oad
+ R *L o ad

VLoad
RLoad I0
-

V L oad V L*oad V
The simplest approximation to a current generator is obtained by:
I0 I 1
R L o ad
1

R
RLoad
I0

VLoad VEE V V

V
I0  If R>>RLoad results IV/R.
R L o ad  R

A current source realized in this way presents some disadvantages, in fact, the condition
R >> RLoad determines both the need for power supplies with high values of V and high
power loss.
A better current generator can be obtained using a pnp transistor . Applying suitable
voltage VB the transistor functions in the active region and is traversed by a current IC
function of RE.
I = -IC

VEE  VB  | VBEQ | VEE  VB  0.65V 

VB I   IC  I E  
BJT + RE RE
VLoad
RE This current is virtually independent from |VCE| if
+ RLoad - |VCE|>|VCESAT|.
VEE

IC -IC=I

-IB
PNP RE
Output characteristic
characteristics
1 VCE
VCE 
RE

-IB
1
RE
 +
VEE

SERIES
I
-IC=I
1 | ICQ |
-IB  
rce |VCEQ | VA
1
RLoad 1

R

1 VCE VLoad VEE V V


RE
 By using an npn transistor we have:

VE VB  0.65V
I C | I E | 
RE RE

This current is practically independent from VC if

VC>VE+VCESAT.

VCC VCC

R1
ZLoad R1 ZLoad

The voltage VB can be obtained by

BJT BJT
various techniques.
For the configurations shown in the
figure, the current on the load is constant R2
DZ
only if the voltage is such as to guarantee RE RE
that the transistor works in the active
region.
It 'important to note that in reality, this type of current generator does not behave like an
ideal source where the current is fixed. Two different effects have to be considered:
1) hFE (Early effect) varies with VCE.
2) VBE and hFE vary with the temperature.

The figure shows a typical configuration that allows to reduce the effects caused by
variations in temperature. In fact, assuming IC-IE:

VCC  VD
I R 2  R2  VD  VBEQ  I C  RE ; I R 2  ;
R1  R2
=0

1  VCC VD 
IC    R2   R1  VBEQ 
RE  R1  R2 R1  R2 

With this circuit choosing the values of R1 and R2 properly, IC is

practically independent from VBE. Therefore changes with
temperature are very small.
To make it less mandatory the choice of R1 and R2 values , the
series of two diodes can be used at the input.
In integrated circuits the use of resistors, especially to generate small currents, is
expensive in terms of occupied area, therefore the fundamental tendency is to
reduce where it is possible the use of resistors and replace them with active
devices.
The simplest form of the current generator is the current mirror consisting of two
transistors and a resistor.

V CC=0V
IC2
IC2
IRef rce
RRef RLoad IB2
IC2
I C1
BJT1 BJT2 DIC
+
V CE2
I B1 I B2 - VCE VCE2
DVCE

V EE=-10V
This current source is characterized by:
• Current  IC2
• Dynamic res.rce = DVCE/DIC
If the two BJTs are equal, the currents IB1 and IB2 are equal so IC1 = IC2, therefore:

I C1 I Ref VCC  VBEon  VEE

I C 2  I C 1  I Re f  2  IC 2  IC 1   I C 2  I Re f 
hFE 1  2 / hFE RRef

V CC=0V IC2 is approximately constant if |VEE|-Rload IC2>VCEsat

IC2

IRef rce IC2

RRef RLoad

Neglecting VCEsat
I C1 RLOAD
BJT1 BJT2
+
V CE2 IB2
I B1 I B2 -

V EE=-10V |VEE | VCE2

IC2 is approx. constant for |VEE|>Rload IC2

IC2 is not constant for |VEE|<RloadIC2
Simple current Current mirror with
mirror multiple output:

Similarly using pnp

transistors we have:
VEE

IB1 IB2

IC1 BJT1 BJT2

IC2

IREF ILOAD
RREF ZLOA
D
 Current mirror with Similarly using pnp
Simple current
multiple output: transistors we have:
mirror
VEE

IB1 IB2

IC1 BJT1 BJT2

IC2

IREF ILOAD
RREF ZLOA
D

VEE VCC

IC3
IB1 IB2
R1
BJT3
IC1 BJT1 BJT2
IC2
R2
VEE IC3 RRef
IREF IRef IC2
RREF R1
BJT3 IC1 BJT1 BJT2
+
R2 RE V CE2
IB1 IB2 -

Current mirror for a CEC Current mirror for a CCC

 Synthesis of a CCC with a current mirror at the emitter
VCC

IC
R1
+
1) Choose the supply voltage VCC and the transistor biasing points: V CE
-
VCE, VCE2 and IC(=IC1=IC2). VCE= VCE2= VCC /2 . R2
BJT

2) Ic≈I REF RRef

IRef IC2
3) Equal transistors are considered. From the datasheet VBEon and IC1
BJT2
hFE values can be obtained. BJT1
+
V CE2
IB1 IB2 -

VCC  VBEon
3) RRef is obtained by: RRe f 
IC

VCE 2  VBEon VCE 2  VBEon VCE 2  VBEon

4) R2 is obtained by: R2   
IR2 10 I B 10 I C / hFE

VCC  VCE 2  VBEon  VCC  VCE 2  VBEon 

5) R1 is obtained by: R1  
IR2 10 I C / hFE
 Synthesis for a CEC with a current mirror at the collector VEE

IB1 IB2 +
1) Choose the supply voltage VEE and the transistor working points: |VCE2|
BJT1 -
VCE, VCE2 and IC(=-IC1 =-IC2). VCE=|VCE2|+VRE= VEE /2 IC1 BJT2
IC2

VEE
2) BJT is a transistor npn, BJT1 and BJT2 are pnp. From theIREF IC
RREF R1
datasheet |VBEon| and hFE values can be obtained. If only hFEmin +
BJT
and hFEmax values are provided, hFE can be estimated using: V CE
-
R2 RE
hFE = hFE min ·hFE max

VEE  |VBEon |
3) RRef is obtained by: RRe f 
IC
VEE / 10
4) RE is obtained by: RE 
IC

VRE  VBEon VRE  VBEon VRE  VBEon

5) R2 is obtained by: R2   
I R2 10 I B 10 I C / hFE

VEE  VRE  VBEon  VEE  VRE  VBEon 

6) R1 is obtained by: R1  
IR2 10 I C / hFE
RL=1KW

RL=100W
The two transistors have been considered to be identical so that IC2 = Iref.

This constraint can be overcome by using transistors where the junction BE

areas are different.
In this way we can obtain current IC2 up to 1/10 of
the reference current.

In integrated circuits bias currents of the order

of mA-mA are necessary, the Rref should be
chosen with high resistance value.
For example, a IC2 equal to 5mA could be obtained
from a Iref of 50mA (using devices with junction
area ratio of 1/10).

Working with biasing voltage equal to 10V current IREF would be obtained using
RREF=200kW. Resistors of this type are expensive in terms of occupied area.

To overcome this problem the Widlar current generator can be used.

Widlar current generator VCC=0V

IRef
RRef
IC2
VBE1  VBE 2  I C 2  R2 ZLoad

IC1
BJT1 BJT2
+
VCE2
Neglecting the Early effect for the two BJTs VBE is: IB1 IB2 -
R2
VBE
IC
IC  I0  e VT
 VBE  VT  ln VEE=-10V
I0

From which:

I C1 I I C1
VT  ln  VT  ln C 2  I C 2  R2  VT  ln  I C 2  R2
I 01 I 02 IC 2

This relationship is satisfied by a much smaller IC2 than IC1

I C1  1 mA I C1
VT  ln  I C 2  R2
I C1  0.5 mA IC 2
n=IC1/IC2

n ln(n)
1 0.00
2 0.69 1) VEE = -10V e IRef =0.5 mA
3 1.10
4 1.39 2) The goal is a current IC2 equal to IRef /5.
5 1.61
6 1.79 3) From datasheet the quanty VBEon is obtained.
7 1.95
8 2.08
VCC  VBEon  VEE
9 2.20
4) Rref is computed RRef 
10 2.30 I Re f
11 2.40
12 2.48
13 2.56 5) N=5  ln(5)=1.61.
14 2.64
15 2.71 VT  ln  n 
16 2.77 6) R2 is computed R2 
17 2.83 IC 2
18 2.89
19 2.94
20 3.00 VT  K  T  26mV At room temperature
q 27 °C
 VEE

Widlar current generator (PNP) R2

IB1 IB2
VBE1  VBE 2  I E 2  R2
IC1 BJT1 BJT2
VBE1  VBE 2  I C 2  R2 IC2

ILOAD
VBE1  VBE 2  I C 2  R2 IREF RREF
ZLOAD

Neglecting the Early effect for the two BJTs VBE is:
VBE
IC
IC  I0  e VT
 VBE  VT  ln
I0
From which:

I C1 I I C1
VT  ln  VT  ln C 2  I C 2  R2  VT  ln  I C 2  R2
I 01 I 02 IC 2

This relationship is satisfied by a much smaller IC2 than IC1