STP130N6F7

N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7

Power MOSFET in a TO-220 package
Datasheet - production data

Features
Order code VDS RDS(on) max. ID PTOT
STP130N6F7 60 V 5.0 mΩ 80 A 160 W

 Among the lowest RDS(on) on the market

 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness

Applications
 Switching applications
Figure 1: Internal schematic diagram
Description
This N-channel Power MOSFET utilizes
D(2, TAB) STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
G(1)

S(3)

AM01475v1_Tab

Table 1: Device summary

Order code Marking Package Packing
STP130N6F7 130N6F7 TO-220 Tube

July 2015 DocID027410 Rev 4 1/12

This is information on a product in full production. www.st.com
Contents STP130N6F7

Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1 TO-220 type A package information.................................................. 9
5 Revision history ............................................................................ 11

2/12 DocID027410 Rev 4

STP130N6F7 Electrical ratings

1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 60 V
VGS Gate-source voltage ±20 V
Drain current (continuous) at Tcase = 25 °C 80
ID(1) A
Drain current (continuous) at Tcase = 100 °C 80
IDM(2) Drain current (pulsed) 320 A
PTOT Total dissipation at Tcase = 25 °C 160 W
EAS(3) Single pulse avalanche energy 200 mJ
Tstg Storage temperature
175 to -55 °C
Tj Operating junction temperature

Notes:
(1) Current is limited by package.
(2) Pulse width is limited by safe operating area.
(3) starting Tj = 25 °C, ID = 20 A, VDD = 40 V.

Table 3: Thermal data

Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.94
°C/W
Rthj-amb Thermal resistance junction-ambient 62.5

DocID027410 Rev 4 3/12

Electrical characteristics STP130N6F7

2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source
V(BR)DSS VGS = 0 V, ID = 1 mA 60 V
breakdown voltage
Zero gate voltage
IDSS VGS = 0 V, VDS = 60 V 1 µA
drain current
Gate-body leakage
IGSS VDS = 0 V, VGS = 20 V 100 nA
current
Gate threshold
VGS(th) VDS = VGS, ID = 250 µA 2 4 V
voltage
Static drain-source
RDS(on) VGS = 10 V, ID = 40 A 4.2 5.0 mΩ
on-resistance

Table 5: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 2600 -
Coss Output capacitance - 1200 -
VDS = 25 V, f = 1 MHz, VGS = 0 V pF
Reverse transfer
Crss - 115 -
capacitance
Qg Total gate charge - 42 -
VDD = 30 V, ID = 80 A, VGS = 10 V
Qgs Gate-source charge (see Figure 14: "Gate charge test - 13.6 - nC
circuit")
Qgd Gate-drain charge - 13 -

Table 6: Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 30 V, ID = 40 A, RG = 4.7 Ω, - 24 -
tr Rise time VGS = 10 V (see Figure 13: - 44 -
"Switching times test circuit for ns
td(off) Turn-off delay time resistive load" and Figure 18: - 62 -
tf Fall time "Switching time waveform") - 24 -

Table 7: Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
VSD(1) Forward on voltage VGS = 0 V, ISD = 80 A - 1.2 V
Reverse recovery
trr - 50 ns
time
ISD = 80 A, di/dt = 100 A/µs,
Reverse recovery VDD = 48 V (see Figure 15: "Test
Qrr - 56 nC
charge circuit for inductive load switching
and diode recovery times")
Reverse recovery
IRRM - 2.2 A
current

Notes:
(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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STP130N6F7 Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance

Figure 4: Output characteristics Figure 5: Transfer characteristics

Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance

DocID027410 Rev 4 5/12

Electrical characteristics STP130N6F7
Figure 9: Normalized gate threshold voltage
Figure 8: Capacitance variations
vs temperature

Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs

temperature temperature

Figure 12: Source-drain diode forward characteristics

6/12 DocID027410 Rev 4

STP130N6F7 Test circuits

3 Test circuits
Figure 13: Switching times test circuit for resistive
Figure 14: Gate charge test circuit
load

Figure 15: Test circuit for inductive load switching

Figure 16: Unclamped inductive load test circuit
and diode recovery times

Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform

DocID027410 Rev 4 7/12

Package information STP130N6F7

4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

8/12 DocID027410 Rev 4

STP130N6F7 Package information
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline

DocID027410 Rev 4 9/12

Package information STP130N6F7
Table 8: TO-220 type A mechanical data
mm
Dim.
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

10/12 DocID027410 Rev 4

STP130N6F7 Revision history

5 Revision history
Table 9: Document revision history
Date Revision Changes
26-Jan-2015 1 First release.
Datasheet promoted from preliminary data to production data
Text and formatting edits throughout document
In Section Electrical ratings:
- updated Table Absolute maximum ratings
16-Jun-2015 2 In Section Electrical characteristics:
- updated and renamed Table Static (was On/off states)
- updated Table Switching times
- updated Table Source drain diode
Added Section Electrical characteristics (curves)
In Section Electrical characteristics (curves):
08-Jul-2015 3
- updated Figures Output characteristics and Transfer characteristics
In Section Electrical characteristics (curves):
20-Jul-2015 4
- updated Figure Output characteristics

DocID027410 Rev 4 11/12

 STP130N6F7

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12/12 DocID027410 Rev 4