Sheet 6
Sheet 6
Fig. 1
Fig. 2
3. For the circuits in Fig. 3, assume that the transistors have very large β.
Some measurements have been made on these circuits, with the results
indicated in the figure. Find the values of the other labeled voltages and
currents.
Fig. 3
4. Find the value of β for each transistor.
Fig. 4
5. Design the circuit in Fig. 5 to establish a current of 1 mA in the emitter
and a voltage of -1V at the collector. The transistor vEB=0.64 V at
IE=0.1 mA, and β = 100.
Fig. 5
6. For each of the circuits shown in Fig. 6, find the emitter, base, and
collector voltages and currents. Use β= 30, but assume VBE=0.7 V
independent of current level.
(a) (b)
Fig. 6
7. For the circuit in Fig. 7. let VCC=5 V, RC=1 K and RB=20 K.
The BJT has β = 50.
Find the value of VBB that results in the transistor operating
(a) in the active mode with VC=1 V;
(b) at the edge of saturation;
(c) deep in saturation with βforced = 10.
Fig. 7