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Lecture 04

The document discusses the basics of bipolar junction transistors, including their structure consisting of two back-to-back PN junctions forming the emitter, base, and collector regions, the proper forward and reverse biasing of the base-emitter and collector-base junctions, and the three common transistor circuit configurations of common-base, common-emitter, and common-collector.

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Atika Mustari Sami
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19 views

Lecture 04

The document discusses the basics of bipolar junction transistors, including their structure consisting of two back-to-back PN junctions forming the emitter, base, and collector regions, the proper forward and reverse biasing of the base-emitter and collector-base junctions, and the three common transistor circuit configurations of common-base, common-emitter, and common-collector.

Uploaded by

Atika Mustari Sami
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Basic Electronic Devices and Circuits

EEE 2201

Md. Sahabuddin
Assistant Professor
Dept. of Biomedical Engineering (BME)
Jashore University of Science and Technology (JUST)
References:
 Electronic Devices and Circuit Theory
Robert L. Boylestad
Louis Nashelsky
 Principles of Electronics
V.K. Mehta
Rohit Mehta
 A Text Book of Electrical Technology Volume IV
B.L Theraja
A.K Theraja
 Microelectronic Circuts
Sedra and Smith
 Op – Amps and Linear Integrated Circuits
Ramakant A. Gayakward
Bipolar Junction Transistor
• The transistor is a three-layer semiconductor device consisting of either two n- and one p-type
layers of material or two p- and one n-type layers of material. The former is called an npn
transistor, while the latter is called a pnp transistor.
• Basically, the bipolar junction transistor consists of two back-to-back P-N junctions manufactured
in a single piece of a semiconductor crystal. These two junctions give rise to three regions called
emitter, base and collector.
1. Emitter
It is more heavily doped than any of the other regions because its main function is to
supply majority charge carries (either electrons or holes) to the base.
2. Base
It forms the middle section of the transistor. It is very thin as compared to either the
emitter or collector and is very lightly-doped.
3. Collector
Its main function (as indicated by its name) is to collect majority charge carriers coming
from the emitter and passing through the base. In most transistors, collector region is
made physically larger than the emitter region because it has to dissipate much greater
power. Because of this difference, there is no possibility of inverting the transistor i.e.
making its collector the emitter and its emitter the collector.
Transistor Biasing
For proper working of a transistor, it is essential to apply voltages of correct polarity across its two junctions. It is
worthwhile to remember that for normal operation;
1. emitter-base junction is always forward biased and
2. collector-base junction is always reverse- biased.
This type of biasing is known as FR biasing.
Transistor Currents
 The three primary currents which flow in a properly-biased transistor are IE, IB and IC.

 IE = IB + IC It means that a small part (about 1—2%) of emitter current goes to supply base current and the
remaining major part (98—99%) goes to supply collector current.
Operating Regions
 In the active region the collector-base junction is
reverse-biased, while the base-emitter junction is
forward-biased.

 In the cutoff region the collector-base and base-emitter


junctions of a transistor are both reverse-biased.

 In the saturation region the collector-base and base-


emitter junctions are forward-biased.
Transistor Circuit Configurations
Basically, there are three types of circuit connections (called configurations) for operating a transistor.
1. common-base (CB), 2. common-emitter (CE), 3. common-collector (CC).
The term ‘common’ is used to denote the electrode that is common to the input and output circuits.

CB Configuration
In this configuration, emitter current IE is the input current and collector current IC is the output current. The input signal is
applied between the emitter and base whereas output is taken out from the collector and base. In the dc mode the levels of IC
and IE due to the majority carriers are related by a quantity called alpha.

 The ac alpha is formally called the common-


base, short-circuit, amplification factor.
CE Configuration
Here, input signal is applied between the base and emitter and output signal is taken out from the collector and
emitter circuit. In the dc mode the levels of IC and IB are related by a quantity called beta.

 It is also called common-emitter d.c. forward transfer ratio.

 The formal name for βac is common-emitter, forward-current, amplification factor.


CC Configuration
• The common-collector configuration is used primarily for impedance-matching purposes since it has a high
input impedance and low output impedance, opposite to that of the common-base and common-emitter
configurations. In this case, input signal is applied between base and collector and output signal is taken out
from emitter-collector circuit.
Relations Between Transistor Currents
Thermal Runaway
• For a CE circuit
TRANSISTOR AMPLIFYING ACTION
• Using a common value of 20Ω for the input resistance, we find that

 The basic amplifying action was produced by transferring


a current I from a low to a high-resistance circuit. The
combination of the two terms in italics results in the label
transistor; that is, Transfer + resistor = transistor
Assignment
• Why is the name “Bipolar Junction Transistor”?
• Is it possible to make transistor by connecting two diode back to
back? Explain.

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