DMG1016V

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Mechanical Data

• Low On-Resistance • Case: SOT563
• Low Gate Threshold Voltage VGS(TH) <1V • Case Material: Molded Plastic, “Green” Molding Compound.
• Low Input Capacitance UL Flammability Classification Rating 94V-0
• Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020D
• Low Input/Output Leakage • Terminal Connections: See Diagram
• Complementary Pair MOSFET • Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
• Ultra-Small Surface Mount Package Solderable per MIL-STD-202, Method 208
• ESD Protected Gate • Weight: 0.006 grams (Approximate)
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

SOT563 D1 G2 S2

Q1 Q2

S1 G1 D2

ESD PROTECTED Top View Bottom View Top View

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging
DMG1016V-7 SOT563 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

CA1 = Product Type Marking Code

CA1 YM = Date Code Marking
YM Y = Year (ex: I = 2021)
M = Month (ex: 9 = September)

Date Code Key

Year 2009 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030
Code W …… I J K L M N O P R S

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

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Maximum Ratings N-Channel – Q1 (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±6 V
TA = +25°C 870
Drain Current (Note 5) ID mA
TA = +85°C 630

Maximum Ratings P-Channel – Q2 (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±6 V
TA = +25°C -640
Drain Current (Note 5) ID mA
TA = +85°C -460

Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 530 mW
Thermal Resistance, Junction to Ambient (Note 5) RθJA 235 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Note: 5. Device mounted on FR-4 PCB.

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Electrical Characteristics N-Channel – Q1 (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 20   V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS   100 nA VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS   ± 1.0 µA VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) 0.5  1.0 V VDS = VGS, ID = 250µA
 0.3 0.4 VGS = 4.5V, ID = 600mA
Static Drain-Source On-Resistance RDS(ON)  0.4 0.5 Ω VGS = 2.5V, ID = 500mA
 0.5 0.7 VGS = 1.8V, ID = 350mA
Forward Transfer Admittance |YFS|  1.4  S VDS =10V, ID = 400mA
Diode Forward Voltage (Note 6) VSD  0.7 1.2 V VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS
Input Capacitance CISS  60.67  pF
VDS = 16V, VGS = 0V
Output Capacitance COSS  9.68  pF
f = 1.0MHz
Reverse Transfer Capacitance CRSS  5.37  pF
Total Gate Charge QG  736.6 
VGS = 4.5V, VDS = 10V,
Gate-Source Charge QGS  93.6  pC
ID = 250mA
Gate-Drain Charge QGD  116.6 
Turn-On Delay Time tD(ON)  5.1 
VDD = 10V, VGS = 4.5V,
Turn-On Rise Time tR  7.4 
ns RL = 47Ω, RG = 10Ω,
Turn-Off Delay Time tD(OFF)  26.7 
ID = 200mA
Turn-Off Fall Time tF  12.3 

Electrical Characteristics P-Channel – Q2 (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -20   V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS   -100 nA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS   ± 2.0 µA VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) -0.5  -1.0 V VDS = VGS, ID = -250µA
0.5 0.7 VGS = -4.5V, ID = -430mA
Static Drain-Source On-Resistance RDS(ON)  0.7 0.9 Ω VGS = -2.5V, ID = -300mA
1.0 1.3 VGS = -1.8V, ID = -150mA
Forward Transfer Admittance |YFS|  -0.9  S VDS =10V, ID = -250mA
Diode Forward Voltage (Note 6) VSD  -0.8 -1.2 V VGS = 0V, IS = -150mA
DYNAMIC CHARACTERISTICS
Input Capacitance CISS  59.76  pF
VDS = -16V, VGS = 0V
Output Capacitance COSS  12.07  pF
f = 1.0MHz
Reverse Transfer Capacitance CRSS  6.36  pF
Total Gate Charge QG  622.4 
VGS = -4.5V, VDS = -10V,
Gate-Source Charge QGS  100.3  pC
ID = -250mA
Gate-Drain Charge QGD  132.2 
Turn-On Delay Time tD(ON)  5.1 
VDD = -10V, VGS = -4.5V,
Turn-On Rise Time tR  8.1 
ns RL = 47Ω, RG = 10Ω,
Turn-Off Delay Time tD(OFF)  28.4 
ID = -200mA
Turn-Off Fall Time tF  20.7 
Note: 6. Short duration pulse test used to minimize self-heating effect.

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N-CHANNEL – Q1
1.0 1.0
VGS = 8.0V

VGS = 4.5V

0.8 0.8
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 3.0V
0.6 0.6
VGS = 2.5V

VGS = 2.0V

0.4 VGS = 1.5V 0.4

TA = 150°C
0.2 0.2
VGS = 1.2V TA = 125°C TA = 85°C
TA = 25°C

TA = -55°C
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic

0.8 0.5

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

0.7
TA = 150°C
0.4
0.6 T A = 125°C

TA = 85°C
0.5
0.3
T A = 25°C
0.4 VGS = 1.8V

VGS = 2.5V 0.2

0.3 TA = -55°C
VGS = 4.5V
0.2
0.1
0.1

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.7 0.8

1.5
ON-RESISTANCE (NORMALIZED)

0.6
RDSON, DRAIN-SOURCE
RDSON, DRAIN-SOURCE

ON-RESISTANCE (Ω)

1.3

VGS = 2.5V
1.1 0.4 ID = 250mA

VGS = 4.5V
0.9 ID = 500mA
VGS = 4.5V
0.2 ID = 500mA
VGS = 2.5V
0.7 ID = 250mA

0.5 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature
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N-CHANNEL – Q1 (continued)
1.6 1.0
VGS(TH), GATE THRESHOLD VOLTAGE (V)

0.8
1.2

IS, SOURCE CURRENT (A)

TA = 25°C

0.6

0.8 ID = 1mA

0.4
ID = 250µA

0.4
0.2

0 0
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current

100 1,000
TA = 150°C
Ciss IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)

100 TA = 125°C

10 Coss

TA = 85°C
C rss
10

TA = 25°C

1 1
0 5 10 15 20 0 4 8 12 16 20
VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage

1
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7
D = 0.5

D = 0.3

0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 260°C/W
D = 0.02

0.01 P(pk)
D = 0.01
t1

t2
D = 0.005
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response

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P-CHANNEL – Q2
1.0 VGS = -8.0V 1.0
VGS = -4.5V VDS = -5V

0.8 0.8

-ID, DRAIN CURRENT (A)

VGS = -3.0V
0.6 VGS = -2.5V 0.6

VGS = -2.0V

0.4 0.4

TA = 150°C
0.2 VGS = -1.5V 0.2
TA = 125°C TA = 85°C

TA = 25°C
TA = -55°C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic Fig. 13 Typical Transfer Characteristic

1.6 1.0

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω)

VGS = -4.5V
1.4
0.8
1.2 TA = 150°C
VGS = -1.8V

1.0 TA = 125°C
0.6
TA = 85°C

0.8
TA = 25°C
VGS = -2.5V 0.4
0.6
TA = -55°C

0.4 VGS = -4.5V

0.2
0.2

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0
-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)
Fig. 14 Typical On-Resistance Fig. 15 Typical On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.7 1.0
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)

1.5
ON-RESISTANCE (NORMALIZED)

0.8
RDSON, DRAIN-SOURCE

VGS = -2.5V
1.3 ID = -250mA

0.6

1.1
VGS = -4.5V
0.4 VGS = -4.5V
ID = -500mA ID = -500mA
0.9

VGS = -2.5V 0.2

0.7 ID = -250mA

0.5 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature Fig. 17 On-Resistance Variation with Temperature

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P-CHANNEL – Q2 (continued)
1.6 1.0
-VGS(TH), GATE THRESHOLD VOLTAGE (V)

0.8

-IS, SOURCE CURRENT (A)

1.2
TA = 25°C

0.6

0.8 ID = -1mA

0.4
ID = -250µA

0.4
0.2

0 0
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
TA, AMBIENT TEMPERATURE (°C) -V SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature Fig. 19 Diode Forward Voltage vs. Current

100 1,000
TA = 150°C
Ciss -IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)

TA = 125°C
100

Coss
10

Crss
10 TA = 85°C

TA = 25°C

1 1
0 5 10 15 20 0 4 8 12 16 20
-VDS, DRAIN-SOURCE VOLTAGE (V) -V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Total Capacitance Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage

1
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7
D = 0.5

D = 0.3

0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
R θJA = 260°C/W
D = 0.02

0.01 P(pk)
t1
D = 0.01
t2
D = 0.005 TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2

D = Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 22 Transient Thermal Response
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Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT563
b
a a

SOT563
E E1 Dim Min Max Typ
A 0.55 0.60 --
b 0.15 0.30 0.20
c 0.10 0.18 0.11
L D 1.50 1.70 1.60
R.01 E 1.55 1.70 1.60
e E1 1.10 1.25 1.20
c
e -- -- 0.50
e1 e1 0.90 1.10 1.00
L 0.10 0.30 0.20
D
a a 8° 9° 7°
All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT563

C X
Dimensions Value (in mm)
C 0.500
C1 1.270
Y G 0.600
X 0.300
X1 1.300
Y1 G C1 Y 0.670
Y1 1.940

X1

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Copyright © 2021 Diodes Incorporated

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DMG1016V 9 of 9 April 2021

Document number: DS31767 Rev. 5 - 2 www.diodes.com © Diodes Incorporated