SENSOR PRODUCTS

APPLICATIONS 1- and 2-Axis Magnetic

Compassing

Navigation Systems Sensors

Attitude Reference HMC1001 / 1002
Traffic Detection HMC1021 / 1022
Medical Devices

C
Non-Contact Switch onfigured as a 4-element
wheatstone bridge, these
magnetoresistive sensors
convert magnetic fields to
a differential output volt-
age, capable of sensing
magnetic fields as low as
30 µgauss. These MRs
offer a small, low cost,
high sensitivity and high
reliability solution for low
field magnetic sensing.

Not actual size

FEATURES AND BENEFITS

Wide Field Range Field range up to ±6 gauss, (earth’s field = 0.5 gauss)

Small Package • Designed for 1- and 2-axis to work together to provide 3-axis (x, y, z) sensing
• 1-axis part in an 8-pin SIP or an 8-pin SOIC or a ceramic 8-pin DIP package
• 2-axis part in a 16-pin or 20-pin SOIC package

Solid State These small devices reduce board assembly costs, improve reliability and ruggedness com-
pared to mechanical fluxgates.

On-Chip Coils Patented on-chip set/reset straps to reduce effects of temperature drift, non-linearity errors and
loss of signal output due to the presence of high magnetic fields
Patented on-chip offset straps for elimination of the effects of hard iron distortion

Cost Effective The sensors were specifically designed to be affordable for high volume OEM applications.
LINEAR MAGNETIC FIELD SENSORS
HMC1001/1002 SPECIFICATIONS
Characteristics Conditions* Min Typ Max Unit

Bridge Supply Vbridge referenced to GND 5 12 Volts

Bridge Resistance Bridge current = 10mA 600 850 1200 ohm

Operating Temperature (4) -55 150 °C

Storage Temperature (4) Unbiased -55 175 °C

Field Range (4) Full scale (FS), total applied field -2 +2 gauss

Linearity Error (4) Best fit straight line ±1 gauss 0.1 0.5 %FS
±2 gauss 1 2

Hysteresis Error (4) 3 sweeps across ±2 gauss 0.05 0.10 %FS

Repeatability Error (4) 3 sweeps across ±2 gauss 0.05 0.10 %FS

S/R Repeatability (1) 10

S/R Repeatability (2) Output variation after alternate S/R pulses 2 100 µV

Bridge Offset Offset = (OUT+) – (OUT-), Field=0 gauss -60 -15 30 mV

after Set pulse, Vbridge=8V

Sensitivity S/R Current = 3A 2.5 3.2 4.0 mV/V/gauss

Noise Density (4) Noise at 1 Hz, Vbridge=5V 29 nV/ Hz

Resolution (4) Bandwidth=10Hz, Vbridge=5V 27 µgauss

Bandwidth (4) Magnetic signal (lower limit = DC) 5 MHz

OFFSET Strap Measured from OFFSET+ to OFFSET- 2.5 3.5 ohm

OFFSET Strap Ω Tempco (4) TA = -40 to 125° C 0.39 %/° C

OFFSET Field (4) Field applied in sensitive direction 46 51 56 mA/gauss

Set/Reset Strap Measured from S/R+ to S/R- 1.5 1.8 ohm

Set/Reset Current (2) (3) (4) 2 µs current pulse, 1% duty cycle 3.0 3.2 5 Amp

Set/Reset Ω Tempco (4) T A = -40 to 125° C 0.37 %/° C

Disturbing Field (4) Sensitivity starts to degrade. 3 gauss

Use S/R pulse to restore sensitivity.

Sensitivity Tempco (4) T A = -40 to 125° C Vbridge=8V -0.32 -0.3 -0.28 %/° C
Ibridge=5mA -0.06

Bridge Offset Tempco (4) T A = -40 to 125° C no Set/Reset ±0.03 %/° C

Vbridge=5V with Set/Reset ±0.001

Resistance Tempco (4) T A = -40 to 125° C 0.25 %/° C

Cross-Axis Effect (4) Cross field=1gauss no Set/Reset ±3 %FS

(see AN-205) with Set/Reset +0.5

Max. Exposed Field (4) No perming effect on zero reading 10000 gauss

Weight HMC1001 0.14 gram

HMC1002 0.53

(1) VBridge = 4.3V, IS/R = 3.2A, VOUT = VSET – VRESET

(2) If VBridge = 8.0V, IS/R = 2.0A, lower S/R current leads to greater output variation.
(3) Effective current from power supply is less than 1mA.
(4) Not tested in production, guaranteed by characterization.
(*) Tested at 25° C except otherwise stated.
Units: 1 gauss (g) = 1 Oersted (in air), = 79.58 A/m, 1G = 10E-4 Tesla, 1G = 10E5 gamma.

2
 LINEAR MAGNETIC FIELD SENSORS
HMC1021/1022 SPECIFICATIONS
Characteristic Conditions** Min Typ Max Unit

Bridge Supply Vbridge referenced to GND 5 25 Volts

Bridge Resistance Bridge current = 5mA 800 1100 1300 Ω

Operating Temperature (1) HMC1021S, 1021Z, 1022 -55 150 °C

HMC1021D* - 55 300*

Storage Temperature (1) Unbiased -55 175 °C

Field Range (1) Full scale (FS), — total applied field -6 +6 gauss

Best fit straight line ±1 gauss 0.05

Linearity Error (1) ±3 gauss 0.4 %FS
±6 gauss 1.6

Hysteresis Error (1) 3 sweeps across ±3 gauss 0.08 %FS

Repeatability Error (1) 3 sweeps across ±3 gauss 0.08 %FS

Bridge Offset Offset = (OUT+) – (OUT-), Field = 0 gauss -10 ±2.5 11.25 mV
After Set pulse, Vbridge=5V

Sensitivity S/R Current = 0.5A 0.8 1.0 1.25 mV/V/gauss

Noise Density (1) Noise at 1Hz, Vbridge=5V 48 nV/√Hz

Resolution (1) Bandwidth=10Hz, Vbridge=5V 85 µgauss

Bandwidth (1) Magnetic signal (lower limit = DC) 5 MHz

OFFSET Strap Measured from OFFSET+ to OFFSET- 38 50 60 Ω

OFFSET Strap Ω Tempco (1) TA = -40 to 125° C 0.39 %/° C

OFFSET Field (1) Field applied in sensitive direction 4.0 4.6 6.0 mA/gauss

Set/Reset Strap Measured from S/R+ to S/R- 5.5 7.7 9 Ω

Set/Reset Current 2µs current pulse, 1% duty cycle 0.5 0.5 4.0 Amp

Set/Reset Ω Tempco (1) TA = -40 to 125° C 0.37 %/° C

Disturbing Field (1) Sensitivity starts to degrade. Use S/R 20 gauss

pulse to restore sensitivity.

Sensitivity Tempco (1) TA = -40 to 125° C Vbridge=5V -0.32 -0.3 -0.28 %/° C
Ibridge=5mA -0.06

Bridge Offset Tempco (1) TA = -40 to 125° C no Set/Reset ±0.05 %/° C

Vbridge=5V with Set/Reset ±0.001

Resistance Tempco (1) Vbridge=5V, TA = –40 to 125° C 0.25 %/° C

Cross-Axis Effect (1) Cross field=1 gauss

(see AN-205) Happlied=±1 gauss +0.3 %FS

Max. Exposed Field (1) No perming effect on zero reading 10000 gauss

Set/Reset (1) S/R current ≥ 0.5 Amps 30 µV

*Please reference data sheet, HTMC1021D for specifications.

(1) Not tested in production, guaranteed by characterization.

Units: 1 gauss (G) = 1 Oersted (in air), 1G = 79.58 A/m,

1G = 10E-4 Tesla, 1G = 10E5 gamma

**Tested at 25° C except otherwise stated.

3
LINEAR MAGNETIC FIELD SENSORS
KEY PERFORMANCE DATA
Sensor output vs magnetic field Sensor output vs magnetic field
after being set or reset Output is repeatable in field range ±20 Oe
15 60
1021/1022 1021/1022
10
Vb=5V 40
Vb=5V

Voltage Output (mV)

Output Voltage (mV)

5
20
0
Reset 0
-5
Set
-20
-10
2 sweeps
2 sweeps
-40
-15

-20 -60
-2 -1 0 1 2 -20 -15 -10 -5 0 5 10 15 20
Field (Oe) Field (Oe)
Sensitivity vs temperature
Sensor noise vs frequency Constant voltage power supply
1000 1.3
1021/1022 1021/1022
Vb=5V 1.2
Vb=5V
Noise Density (nV/rt Hz)

Sensitivity (mV/V/Oe)

1.1
100
1

0.9

10
0.8

0.7

1 0.6
0.1 1 10 100 1000 -50 -25 0 25 50 75 100 125
Frequency (Hz) Temperature (C)
Effects of set/reset pulse variation
Bridge resistance vs temperature 2µ sec pulse duration, S/R voltage >4V is recommended
1400 1
Vb=5V
All types 1021/1022
1300 0.8
Vb=5V
Resistance (ohm)

Null Voltage (mV) (Set)

Nonrepeatability

1200 0.6 Null Voltage (mV) (Reset)

Sensitivity (mV/V/Oe) (Set)

1100 0.4 Sensitivity (mV/V/Oe) (Reset)

no
noset/reset
set/resetinint
region
this region

1000 0.2

900 0
-50 -25 0 25 50 75 100 125 0 1 2 3 4 5
Temperature (C) Set/Reset Voltage (V)

4
 LINEAR MAGNETIC FIELD SENSORS
PACKAGE / PINOUT SPECIFICATIONS

HMC1002—Two-Axis MR Microcircuit HMC1001—One Axis MR Microcircuit

GND1 (A) 1 20 S/R- (A)
OUT+ (A) 2 19 NC S/R+ 1 •
Die A
OFFSET- (A) 3 18 GND PLN OFFSET+ 2
Vbridge (A) 4 17 OFFSET (+A) S/R- 3 Die
OUT- (A) 5 16 S/R+ (A) GND 4
GND2 (A) 6 15 OFFSET+ (B) Out+ 5
Die B
S/R- (B) 7 14 S/R+ (B)
OFFSET- 6
GND1 (B) 8 13 GND2 (B)
Vbridge 7
Out+ (B) 9 12 OUT- (B)
OFFSET- (B) 10 11 Vbridge (B)
Out- 8

HMC1022—Two-Axis MR Circuit HMC1021S—One-Axis MR Circuit

OFFSET- (A) 1 •Die A 16

15
OFFSET+ (A)
S/R- (A)
OUT+ 1 • Die 8 OFFSET-
OUT+ (A) 2
VBRIDGE (A) 3 14 S/R+ (A) VBRIDGE 2 7 OFFSET+
OUT- (A) 4 13 GND (B) GND 3 6 S/R-
OUT- (B) 5 12 OUT+ (B) OUT- 4 5 S/R+
Die B
VBRIDGE (B) 6 11 OFFSET- (B)
GND (A) 7 10 OFFSET+ (B) HMC1021S
S/R+ (B) 8 9 S/R- (B)

HMC1021D—One-Axis MR Circuit HMC1021Z—One-Axis MR Circuit

OUT+ 1
Die
8 OFFSET- OUT- 1 •
VBRIDGE 2 7 OFFSET+ VBRIDGE 2
GND 3 S/R+ 3
6 S/R- Die
GND 4
OUT- 4 5 S/R+
S/R- 5
OFFSET+ 6
OFFSET- 7
OUT+ 8

Arrow indicates direction of applied field that generates a

positive output voltage after a SET pulse.

5
LINEAR MAGNETIC FIELD SENSORS
BASIC DEVICE OPERATION
Honeywell magnetoresistive sensors are simple resistive The OFFSET strap allows for several modes of operation
bridge devices (Figure 1) that only require a supply voltage when a dc current is driven through it.
to measure magnetic fields. When a voltage from 0 to 10
volts is connected to Vbridge, the sensor begins measuring • An unwanted magnetic field can be subtracted out
any ambient, or applied, magnetic field in the sensitive axis. • The bridge offset can be set to zero
In addition to the bridge circuit, the sensor has two on-chip • The bridge output can drive the OFFSET strap to cancel
magnetically coupled straps—the OFFSET strap and the out the field being measured in a closed loop configuration
Set/Reset strap. These straps are patented by Honeywell • The bridge gain can be auto-calibrated in the system on
and eliminate the need for external coils around the devices. command.
Vbridge
(7)
3.5 Ω max.
The Set/Reset (S/R) strap can be pulsed with a high current to:
OFFSET + OFFSET -
R R (2) (6)
• Force the sensor to operate in the high sensitivity mode
Ioffset • Flip the polarity of the output response curve
R=600-1200 Ω 2.0 Ω max. • Be cycled during normal operation to improve linearity
OUT+ OUT-
(5) (8) S/R + S/R -
(1) (3) and reduce cross-axis effects and temperature effects.
R R
Iset, -Ireset
GND The output response curves shown in Figure 2 illustrate the
(4)
effects of the S/R pulse. When a SET current pulse (Iset) is
Figure 1—On-Chip components (HMC1001) driven into the SR+ pin, the output response follow the curve
with the positive slope. When a RESET current pulse
Magnetoresistive sensors are made of a nickel-iron (Ireset) is driven into the SR- pin, the output response follow
(Permalloy) thin film deposited on a silicon wafer and the curve with the negative slope. These curves are mirror
patterned as a resistive strip. In the presence of an applied images about the origin except for two offset effects.
magnetic field, a change in the bridge resistance causes a
corresponding change in voltage output. In the vertical direction, the bridge offset shown in Figure 2,
is around -25mV. This is due to the resistor mismatch during
An external magnetic field applied normal to the side of the the manufacture process. This offset can be trimmed to zero
film causes the magnetization vector to rotate and change by one of several techniques. The most straight forward
angle. This in turn will cause the resistance value to vary (∆R/ technique is to add a shunt (parallel) resistor across one leg
R) and produce a voltage output change in the Wheatstone of the bridge to force both outputs to the same voltage. This
bridge. This change in the Permalloy resistance is termed the must be done in a zero magnetic field environment, usually
magnetoresistive effect and is directly related to the angle of in a zero gauss chamber.
the current flow and the magnetization vector.
The offset of Figure 2 in the horizontal direction is referred to
During manufacture, the easy axis (preferred direction of here as the external offset. This may be due to a nearby ferrous
magnetic field) is set to one direction along the length of the object or an unwanted magnetic field that is interfering with the
film. This allows the maximum change in resistance for an applied field being measured. A dc current in the OFFSET
applied field within the permalloy film. However, the influence strap can adjust this offset to zero. Other methods such as
of a strong magnetic field (more than 10 gauss) along the shielding the unwanted field can also be used to zero the
easy axis could upset, or flip, the polarity of film external offset. The output response curves due to the SET
magnetization, thus changing the sensor characteristics. and RESET pulses are reflected about these two offsets.
Following such an upset field, a strong restoring magnetic
40
field must be applied momentarily to restore, or set, the Vcc=8V (1001/1002)
sensor characteristics. This effect will be referred to as 20 response response
after Ireset after Iset
applying a set pulse or reset pulse. Polarity of the bridge
Output Voltage (mV)

0
output signal depends upon the direction of this internal film bridge
offset
magnetization and is symmetric about the zero field output. -20

-40

external
-60 offset

-80
-1.50

-1.25

-1.00

-0.75

-0.50

-0.25

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Applied Field (Gauss)

Figure 2—Output Voltage vs. Applied Magnetic Field

6
 LINEAR MAGNETIC FIELD SENSORS
NOISE CHARACTERISTICS
The noise density curve for a typical MR sensor is shown then it can be compensated for by applying an equal and
in Figure 3. The 1/f slope has a corner frequency near 10 opposite field using the OFFSET strap. Another use for the
Hz and flattens out to 3.8 nV/√Hz. This is approximately OFFSET strap would be to drive a current through the strap
equivalent to the Johnson noise (or white noise) for an that will exactly cancel out the field being measured. This is
850Ω resistor—the typical bridge resistance. To relate the called a closed loop configuration where the current feedback
noise density voltage in Figure 3 to the magnetic fields, use signal is a direct measure of the applied field.
the following expressions:
The field offset strap (OFFSET+ and OFFSET-) will generate
For Vsupply=5V and Sensitivity=3.2mV/V/gauss, a magnetic field in the same direction as the applied field
Bridge output response = 16 mV/gauss being measured. This strap provides a 1 Oersted (Oe) field
or 16 nV/µgauss per 50 mA of current through it in HMC1001/2 and 1 Oe/5mA
in HMC1021/2. (Note: 1 gauss=1 Oersted in air). For
The noise density at 1Hz ≈ 30nV/√Hz example, if 25 mA were driven from the OFFSET+ pin to the
and corresponds to 1.8 µgauss/√Hz OFFSET- pin in HMC1001/2, a field of 0.5 gauss would be
added to any ambient field being measured. Also, a current
For the noise components, use the following expressions: of -25 mA would subtract 0.5 gauss from the ambient field.
The OFFSET strap looks like as a nominal resistance
1/f noise(0.1-10Hz) = 30 * √(ln(10/.1)) nV between the OFFSET+ and OFFSET- pins.
64 nV (rms)
4 µgauss (rms) The OFFSET strap can be used as a feedback element in
27 µgauss (p-p) a closed loop circuit. Using the OFFSET strap in a current
feedback loop can produce desirable results for measuring
white noise (BW=1KHz) = 3.8 * √BW nV magnetic fields. To do this, connect the output of the bridge
120 nV (rms) amplifier to a current source that drives the OFFSET strap.
50 µgauss (p-p) Using high gain and negative feedback in the loop, this will
drive the MR bridge output to zero, (OUT+) = (OUT-). This
1000 method gives extremely good linearity and temperature
characteristics. The idea here is to always operate the MR
bridge in the balanced resistance mode. That is, no matter
(1001/1002) what magnetic field is being measured, the current through
(nV/ √ Hz)

the OFFSET strap will cancel it out. The bridge always

100
“sees” a zero field condition. The resultant current used to
cancel the applied field is a direct measure of that field
Density

strength and can be translated into the field value.

The OFFSET strap can also be used to auto-calibrate the

Noise

10
MR bridge while in the application during normal operation.
This is useful for occasionally checking the bridge gain for
that axis or to make adjustments over a large temperature
swing. This can be done during power-up or anytime during
1
0.1 1 10 100 1000
normal operation. The concept is simple; take two point
Frequency (Hz) along a line and determine the slope of that line—the gain.
When the bridge is measuring a steady applied magnetic
Figure 3—Typical Noise Density Curve
field the output will remain constant. Record the reading for
the steady field and call it H1. Now apply a known current
through the OFFSET strap and record that reading as H2.
WHAT IS OFFSET STRAP? The current through the OFFSET strap will cause a change
in the field the MR sensor measures—call that delta applied
Any ambient magnetic field can be canceled by driving a field (∆Ha). The MR sensor gain is then computed as:
defined current through the OFFSET strap. This is useful
for eliminating the effects of stray hard iron distortion of the MRgain = (H2-H1) / ∆Ha
earth’s magnetic field. For example, reducing the effects of
a car body on the earth’s magnetic field in an automotive There are many other uses for the OFFSET strap than those
compass application. If the MR sensor has a fixed position described here. The key point is that ambient field and the
within the automobile, the effect of the car on the earth’s OFFSET field simply add to one another and are measured
magnetic field can be approximated as a shift, or offset, in by the MR sensor as a single field.
this field. If this shift in the earth's field can be determined,

7
LINEAR MAGNETIC FIELD SENSORS
WHAT IS SET/RESET STRAP?
Most low field magnetic sensors will be affected by large longer, to conserve power. The only requirement is that
magnetic disturbing fields (>4 - 20 gauss) that may lead to each pulse only drive in one direction. That is, if a +3.5 amp
output signal degradation. In order to reduce this effect, and pulse is used to “set” the sensor, the pulse decay should not
maximize the signal output, a magnetic switching technique drop below zero current. Any undershoot of the current
can be applied to the MR bridge that eliminates the effect pulse will tend to “un-set” the sensor and the sensitivity will
of past magnetic history. The purpose of the Set/Reset not be optimum.
(S/R) strap is to restore the MR sensor to its high sensitivity
state for measuring magnetic fields. This is done by pulsing Using the S/R strap, many effects can be eliminated or
a large current through the S/R strap. The Set/Reset (S/R) reduced that include: temperature drift, non-linearity errors,
strap looks like a resistance between the SR+ and SR- pins. cross-axis effects, and loss of signal output due to the
This strap differs from the OFFSET strap in that it is presence of a high magnetic fields. This can be accom-
magnetically coupled to the MR sensor in the cross-axis, or plished by the following process:
insensitive, direction. Once the sensor is set (or reset), low
noise and high sensitivity field measurement can occur. In • A current pulse, Iset, can be driven from the S/R+ to the
the discussion that follows, the term “set” refers to either a S/R- pins to perform a “SET” condition. The bridge output
set or reset current. can then be measured and stored as Vout(set).

When MR sensors exposed to a magnetic disturbing field, • Another pulse of equal and opposite current should be
the sensor elements are broken up into ramdonly oriented driven through the S/R pins to perform a "RESET" condi-
magnetic domains (Figure 4A) that leads to sensitivity tion. The bridge output can then be measured and stored
degrading. A current pulse (set) with a peak current above as Vout(reset).
minimum current in spec through the Set/Reset strap will
generate a strong magnetic field that realigns the magnetic • The bridge output, Vout, can be expressed as: Vout =
domains in one direction (Figure 4B). This will ensure a high [Vout(set) - Vout(reset)]/2. This technique cancels out
sensitivity and repeatable reading. A negative pulse (Reset) offset and temperature effects introduced by the electron-
will rotate the magnetic domain orientation in the opposite ics as well as the bridge temperature drift.
direction (Figure 4C), and change the polarity of the sensor
outputs. The state of these magnetic domains can retain for There are many ways to design the set/reset pulsing circuit,
years as long as there is no magnetic disturbing field though, budgets and ultimate field resolution will determine
present. which approach will be best for a given application. A simple
Permalloy (NiFe) Resistor
set/reset circuit is shown in Figure 5.
6-9V
Random
3
Domain 25K RESET SET RESET
Orientations
IRF7105

4
Signal should be in
RESET state when idle
0.2µF
Easy Axis Magnetization Fig.4A S/R+ 5,6 0.1µF
7,8 2
Signal input
After a 5V
S/R- 1
Set Pulse Manual Switch

Fig.4B Figure 5—Single-Axis Set/Reset Pulse Circuit (1001)

Magnetization

After a The magnitude of the set/reset current pulse depends on

Reset Pulse the magnetic noise sensitivity of the system. If the minimum
Fig.4C
detectable field for a given application is roughly 500
µgauss in HMC1001/2, then a 3 amp pulse (min) is adequate.
If the minimum detectable field is less than 100 µgauss,
Figure 4—
then a 4 amp pulse (min) is required. The circuit that
generates the S/R pulse should be located close to the MR
sensor and have good power and ground connections.
The on-chip S/R should be pulsed with a current to realign,
or “flip”, the magnetic domains in the sensor. This pulse can The set/reset straps on the Honeywell magnetic sensors
be as short as two microsecond and on average consumes are labeled S/R+ and S/R-. There is no polarity implied
less than 1 mA dc when pulsing continuously. The duty since this is simply a metal strap resistance.
cycle can be selected for a 2 µsec pulse every 50 msec, or

8
 LINEAR MAGNETIC FIELD SENSORS

Single Clock Circuitry—Some form of clock is needed to SET and RESET signals are generated from a
trigger the set and reset pulses (Figure 6) to create the microprocessor and control the P and N channel HEXFET
switching signal. The circuit shown in Figure 8 can be used drivers (IRF7105). The purpose of creating the TRS and the
to create a strong (>4Amp) pulse. The diodes, resistors, TSR delays are to make sure that one HEXFET is off before
capacitors and inverters basically create the TRS and the the other one turns on. Basically, a break-before-make
TSR delays. Now a single signal (Clock) can trigger a set or switching pattern. The current pulse is drawn from the 4.7
reset pulse. The minimum timing between the rising and µF capacitor. If the 5V to 20V converter is used as shown in
falling edges of Clock are determined by the 25KΩ and 1nF Figure 7, then the resultant noise and droop on the 16-20V
time constant. That is, the minimum high and low time for supply is not an issue. But if the 16-20V supply is used
Clock is ≈25 µs. elsewhere in the system, then a series dropping resistor
(≈500Ω) should be placed between the 4.7µF capacitor and
Micro Processor—The circuit in Figure 9 generates a strong the supply.
MAX662A
set/reset pulse (>4 Amp) under microprocessor control. The
2 3
C1+ C2-
5V 0.22µF* 0.22µF*
1 4
Clock C1- C2+
8 1µF
SHDN
16V 7 GND 6 20V
set Vout
TPW ≈ 2 µsec 5V 5 1N5818 1µF
S/R Vcc
2µF
1µF 12V
-16V reset
* Use tantalum capacitors
Figure 6—Single Clock Set/Reset Timing
Figure 7—5V to 20V Converter

+16 to 20V
4.7µF (3)

5V 25K
74HC04 25K
14 25K 3 S/R strap @ 4.5Ω typ.
Clock 9 8 3 4 3A peak (min.)
IRF7106 (1)

4
7
HMC2003 *
1N4001 1nF 10K 0.1µF
1 2 0.22µF (2) 17 1

2N3904 5,6
25K 7,8
5 6 2
S/R

1nF 1
(1) HEXFETs with ≈0.2Ω Ron
(2) 0.22µF Tantalum or a
0.68 µF Ceramic CK06
(3) Tantalum, low R

Figure 8—Single Clock Set/Reset Pulse Circuit (1001/1002)

+16 to 20V
5V
SET 4.7µF (1)

25K
25K 3
RESET S/R strap @ 4.5Ω typ.
TRS TSR 3A peak (min.)
IRF7106 (2)

4
16V HMC2003 *
set 10K 0.1µF
0.22µF 17 1
SET
S/R 5,6
2N3904
TPW 2 7,8
TRS ≥ 5 µsec reset RESET S/R
-16V
TSR ≥ 5 µsec
1
TPW ≈ 2 µsec (1) Tantalum, low R
(2) HEXFETs with ≈0.2Ω Ron

•HMC2003 contains one HMC1001 and one HMC1002; together they make the 3-axis sensor.
Three S/R straps are in serial, the total resistance is ~4.5Ω.
Figure 9—Set/Reset Circuit With Microprocessor Control (1001/1002)

9
LINEAR MAGNETIC FIELD SENSORS
Low Field Measurements—When measuring 100 µgauss For any magnetic sensor application, if temperature drift is
resolution or less, the permalloy film must be completely not an issue, then the reset pulse need only be occasionally
set, or reset, to insure low noise and repeatable applied. This will save power and enable the use of digital
measurements. A current pulse of 4 amps, or more, for just filtering techniques as shown in Figure 12. Circumstances
a couple microseconds will ensure this. The circuits in for a reset pulse would be 1) power on or, 2) field over/
Figures 8 and 9 are recommended for applications of under range condition. Any other time the sensor should
HMC1001/2 that require low noise and high sensitivity perform normally.
magnetic readings.
200
1µF
1µF(1)
(1)
Low Cost—For minimum field measurements above 500 +5V
µgauss, a less elaborate pulsing circuit can be used. In both 10K
0.1µF
0.1µF
Figures 10 and 11, the pulse signal is switched using lower
FMMT717 HMC1022
cost Darlington transistors and fewer components. This circuit
may have a more limited temperature range depending on the 14 8 9,15

quality of transistors selected. If accuracy is not an issue and 0.1µF

cost is, then the reset only circuit in Figure 11 will work. 0.1µF

+16 to 20V Clock FMMT617

4.7µF (1)
10K
(1) Tantalum, low R
10K S/R strap @ 4.5Ω typ.
0.022µF 3A peak (min.)
ZTX705
HMC2003*
Figure 12—5V Circuit for SET/RESET (1021/1022)
0.22µF 17 1

0.022µF The circuit in Figure 13 generates a strong set/reset pulse

Clock ZTX605 S/R under a microprocessor clock driven control. A free running
10K
555 timer can also be used to clock the circuit. The SET
(1) Tantalum, low R
current pulse is drawn from the 1 µF capacitor and a 200
ohm dropping resistor should be placed in series with the
supply to reduce noise.
Figure 10—Single Clock Set/Reset Circuit (1001/1002)

+16 to 20V S/R strap @ 4.5Ω typ.

3A peak (min.)

100K HMC2003 *
0.22µF 17 1

0.022µF
Clock ZTX605 S/R
10K

5V
Clock

S/R
TPW ≈ 2 µsec
-16V reset

*The HMC2003 has 3-axis S/R straps in series.

These are the HMC1001 and HMC1002 sensors.

Figure 11—Single Clock Reset Only Circuit (1001/1002)

10
 LINEAR MAGNETIC FIELD SENSORS
200
1µF (1)
+5 to 6V
5V
Clock 3
HMC1022
4 to14V 4 IRF7105 (2)
set DI9952 (2) 14 8 9,15
TPW ~ 2 µsec 0.1µF
S/R
5,6
reset 2 7,8
-4 to -14V Clock S/R

set rst set 1 (1) Tantalum, low R

(2) Rds ~0.2 ohm

Figure 13—Set/Reset Pulse With Clock Control (1021/1022)

Low Power—For low power application, down to 3.3 volt SET Pulse
supply, the circuit shown in Figure 15 can be used. These
low threshold FETs provide low on-resistance (0.3Ω) at Read Vset
VGS=2.7V. The set/reset pulsing does not need to be
continuous. To save power, the SET pulse can be initially
RESET Pulse
applied followed by a single RESET pulse. The offset (OS)
can be calculated as:
Read Vrst

OS = (Vset + Vrst)/2
OS = (Vset+Vrst)/2

This offset term will contain the DC offset of both the sensor
bridge and interface electronics, as well as the temperature Vout = Vrst - OS

drift of the bridge and interface electronics. Store this value

and subtract it from all future bridge output readings. Once Timer y
the bridge is RESET, it will remain in that state for years— expired?
or until a disturbing field (>20 gauss) is applied. A timer can
n
be set, say every 10 minutes, to periodically update the
Read Vrst
offset term. A flow chart is shown in Figure 14 along with a
timing diagram in Figure 15 to illustrate this process. Figure 14—Low Power Set/Rst Flowchart

Ta Tb T a Tc

Reset 200
1µF (1)
+3.3 to
6.5V
+
Set 1,3
HMC1022
Td Td 2,4
Set
read read 14 8 9,15
Vout Vset Vrst
5,6,7,8 NDS9933 0.1µF
Vp
set 5,6,7,8

2,4
S/R S/R
Reset
TPW (1) Tantalum, low R
1,3 NDS8926 (2) Rds ~0.2 ohm
Ta > 5 µsec -Vp reset
Tb > 1 µsec
Tc > 20 µsec, 50 msec(max) TPW ~ 2 µsec
Td > 20 µsec Vp > 3 V

Figure 15—Single Clock Set/Reset Pulse Circuit (1021/1022)

11
LINEAR MAGNETIC FIELD SENSORS
Simple Circuit Application

The circuit in Figure 16 shows a simple application of a strong (200 gauss) and have one of its magnetic poles
magnetic sensor. This circuit acts as a proximity sensor point along the sensitive direction of the sensor. This
and will turn on the LED when a magnet is brought within circuit can be used to detect a door open/closed status or
0.25 to 0.5 inch of the sensor. The amplifier acts as a the presence or absence of an item. Figures 17, 18, 19,
simple comparator and switches low when the HMC1001 20 and 21 show other circuit examples.
bridge output exceeds 30mV. The magnet must be

Magnetic Magnetic
Sensor +5V +5V Sensor
7 V+ 650 CS5509
7 +5V 1.5nF#
100 16 bit A/D
0.15µF#

HMC1001
R1* 1 6,11,13
magnet 7 8 2 8
V+ +5V
2
HMC1001

movement 1 - 6 Vout 7 CONV

LED 5 3 Ain+
8 V+ 3 8 400 + 8 14
+ 6 AMP04 SCLK
AMP04 4 R2* 5 Ain- 15

Serial Bus
5 V- 2
- V+

Interface
Vout SDATA
16
5 25K NDRDY
R1* 4 1.6Ω Vref 9 4
4
Gain=1000, BW=10Hz Ref+ XIN
* R1 is used to trim switchpoint LM440 10 3
# provides 10Hz rolloff Ref- CAL
3 1 2.5V 12 1
Gnd NCS
Calibrate:
1. Trim R1 for (+V) - (-V) < 30mV
* R1 or R2 used to trim offest
2. Apply signal < 30mV, LED should be off. # provides 1KHz rolloff
3. Apply signal > 30mV, LED should be on. S/R
Pulse

Figure 16—Magnetic Proximity Switch Figure 17—One-Axis Sensor With Digital Interface
+6-15V

Magnetic
BS250

100K
Sensor V+ 650
7 CS5509
1.5nF# 16 bit A/D
0.01
HMC1001

R1* 1 6,11,13
1 8 2 8 V+ +5V
Vref LMC7101 - 6 Vout 7 CONV
2
5 3 Ain+
+ - + 8
14
22.1K AMP04
Ain- SCLK
4 3 4 R2* 5 15

Serial Bus
V+ SDATA

Interface
16
R3** 10 5 mA 25K NDRDY
1.6Ω Vref 9 4
Ref+ XIN
10 3
LM440 Ref- CAL
3 1 2.5V 12
Gnd 1
NCS

* R1 or R2 used to trim offest

**R3 = 451Ω for 1 axis, 921Ω for 2 axis, or 1411Ω for 3 axis
S/R # provides 1KHz rolloff
Pulse

Figure 18—One-Axis Sensor With Constant Bridge Current and Digital Interface

+5V

+5V V+

200
10K SW1 OUT-1
V BRIDGE2
Sensitive
S/R+3 -
Direction
GND4 AMP623 Vout
4.7uF S/R-5 + +5V
tantalum 1M OFFSET+6
OFFSET-7
OUT+8 2.5V
25K

HMC1021S
Z
LM404-2.5
Gnd

(1) Momentarily close switch SW1. This creates a SET pulse. (2) Measure bridge output (OUT+) - (OUT-) NOTE: Bridge
output signal will be 5mV/gauss (3) Measure Vout after AD623 amplifier (G~500) NOTE: Vout signal will be 2.5V/gauss

Figure 19—One-Axis Low Cost Sensor

12
 LINEAR MAGNETIC FIELD SENSORS
Magnetic
Magnetic
SensorS
Sensors

4 V+ 650
+5V 1.5nF# TLC2543
R1* 1 12 bit A/D
5 2 8
20
X 2 3
-
+
6 1
AIN0 V+
18
+5V
2 CLK
AMP04 AIN1

Serial Bus
R2*

Interface
1,6 5 17
DIN
Vref 16
HMC1002 14
Ref+ DOUT
11 V+ 650 13 NCS
15
+5V 1.5nF# Ref-
10 19
R3* 1 Gnd EOC
9 2 8
-
Y 12 3
+
6

AMP04 +5V
8,13 R4* 5 25K
Vref
20
LM440
1.6 2.5V
14
1.6
7,18 16 MAX662A
3 2
* R1-R4 used to trim offest C2- C1+
# provides 1KHz rolloff 0.22µF +
+ 0.22µF
4 1
C2+ C1-
5
Vcc +5V
12V 6 8
4.7µF Vout SHDN
tantalum 4.7µF
1K + 7
4.7µF GND
3 25K
IRF7105

4
0.1µF
0.2µF
0.1µF
5,6
7,8 2 SR Rst Set Rst
Signal input
Signal should be in Rst
1 5V state when idle
Manual Switch

Figure 20—Two-Axis Sensor With Set/Reset Circuit and Digital Interface

+5V

-
+ 10 0 K
Vref

Magnetic LM324a 10 0 K 0 .1 u F
Magnetic
Sensors
Sensor

Vb
-
-
+ +
LM324b

Vref

Vb Sel 1
Sel 2
-
-
+ +
LM324c

Vref AB

0.1µF 0X
0.1 F
1X - Output
X Output
Vref 2X +
S/R straps 0.1µF 3X
0.1 F

4052
Vr ef

Vref

Vb
- S/R Control
-
+ +
LM324d

HMC1001
Vref

S/R strap 0.1µF

0.1 F
200
+5V
1µF
1 F

S/R
NDC7001 or
equiv.

Figure 21—Three-Axis Low Cost Magnetic Sensor

13
LINEAR MAGNETIC FIELD SENSORS
PACKAGE OUTLINES

HMC1002—Package Outline
D A1

Millimeters Inches
Symbol Min Max Min Max
20 11 A 2.489 2.642 .098 .104
A1 0.127 0.279 .005 .011
B 0.457 0.483 .014 .019
E H
D 12.675 12.929 .499 .509
E 7.264 7.417 .286 .292
1 10 e 1.270 ref .050 refref
H 1.270 10.566 .396 .416
h h 0.381 ref .015 .030
e A
B

HMC1001—8-Pin SIP and

HMC1021Z—8-Pin SIP Millimeters Inches
D Symbol Min Max Min Max
A 1.371 1.728 .054 .068
A1 0.101 0.249 .004 .010
H E 1 h × 45° B 0.355 0.483 .014 .019
8
D 9.829 11.253 .387 .443
E 3.810 3.988 .150 .157
A e 1.270 ref .050 ref
H 5.014
6.850 5.314
7.300 0.270 .209
.197 0.287
h 0.381 0.762 .015 .030
e B A1

HMC1021D—8-Pin Ceramic DIP

D A1
Millimeters Inches

8 7 6 5
Symbol Min Max Min Max

A 2.718 ref 0.107 ref

E E1 A1 0.229 0.305 0.009 0.012

b 0.406 0.508 0.016 0.020
D — 10.287 — 0.405

Q


















1

L
2 3 4
A
E
E1
e
7.163
7.366
7.569
7.874
2.54 ref
0.282
0.290
0.298
0.310
0.100 ref
e Q 0.381 1.524 0.015 0.060
b L 3.175 4.445 0.125 0.175

HMC1021S—8-Pin SOIC
D Millimeters Inches
A1
Symbol Min Max Min Max
A 1.371 1.728 .054 .068
A A1 0.101 0.249 .004 .010
B 0.355 0.483 .014 .019
H E 1 D 4.800 4.979 .189 .196
• E 3.810 3.988 .150 .157
e 1.270 ref .050 ref
h x 45° H 5.816 6.198 .229 .244
e B h 0.381 0.762 .015 .030

HMC1022—16-Pin SOIC
D Millimeters Inches
A1 Symbol Min Max Min Max
A 1.371 1.728 .054 .068
A A1 0.101 0.249 .004 .010
16 9
B 0.355 0.483 .014 .019
H E D 11.253 .387 .443
1 8
9.829
• E 3.810 3.988 .150 .157
e 1.270 ref .050 ref
H 5.816 6.198 .229 .244
B h x 45°
e h 0.381 0.762 .015 .030

14
 LINEAR MAGNETIC FIELD SENSORS
DESIGN / PACKAGE OPTIONS
Honeywell offers a range of magnetic microcircuit products. Two-axis parts contain two sensors for the x- and y- field
Two different sensor designs and five package measurements. Single-axis variations include a SIP package
configurations are available: for mounting through the circuit board to create a 3-axis
solution, a SOIC for direct surface mount, and a ceramic DIP
• HMC1001/1002 series offers a higher sensitivity and for high performance military and high temperature
lower field resolution. applications.

• HMC1021/1022 series offers a wider field range, lower

set/reset current and has a lower cost for higher volume
applications.

HMC1001/02 HMC1021/22 Units

Sensitivity 3.1 1.0 mV/V/G

Resolution 27 85 µgauss

Range ±2 ±6 gauss

Set/Rst Current 3.0 0.5 Amps

Cost Lower in high volume

ORDERING INFORMATION
Part Number Axis Number Sensitivity Package Style

HMC1001 Single 3mV/V/G 8-Pin SIP

HMC1002 Two 3mV/V/G 20-Pin SOIC

HMC1021D Single 1mV/V/G 8-Pin Ceramic DIP

HMC1021Z Single 1mV/V/G 8-Pin SIP

HMC1021S Single 1mV/V/G 8-Pin SOIC

HMC1022 Two 1mV/V/G 16-Pin SOIC

Solid State Electronics Center • 12001 State Highway 55, Plymouth, MN 55441 • (800) 323-8295 • www.magneticsensors.com

Additional Product Details:

Customer Service Representative
(612) 954-2888 fax: (612) 954-2257
E-Mail: [email protected]
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.

900248 Rev. B
4-00 15