High-voltage reinforced isolation:

Definitions and test methodologies

Anant S Kamath
Systems Engineer, Isolation, Interface Group
Texas Instruments

Kannan Soundarapandian
Product Line Manager, Isolation, Interface Group
Texas Instruments
Understanding the definitions of high-voltage isolation
parameters, their relevance to real applications, and
the methodologies used to test them, allows systems
engineers to pick the right isolator for their design need.
Designing systems involving high voltage and high-voltage isolation is complicated.
How much isolation do I need in my system? What system level isolation standards
apply to my product or end equipment? Are there component-level standards that help
me compare between isolators, and choose the one that best fits my system level need?
Which parameters or metrics should I compare – there seem to be many? What are the
test procedures that isolation components go through to support the parameters in their
datasheets? And foremost, how do I make sure that I am building a system that ensures
reliable operation throughout my product’s lifetime? These are questions faced by many
systems engineers dealing with high voltage and high-voltage isolation.
Isolation is a means of preventing DC and unwanted
AC currents between two parts of a system, while
allowing signal and power transfer between those
two parts. Electronic devices and semiconductor
ICs used for isolation are called isolators. Isolation
is required in modern electrical systems for a
variety of reasons. Some examples are to prevent
electrical shock to human operators and preventing
damage to expensive processors, ASICs or FPGAs
in high-voltage systems, breaking the ground loop
in communication networks and communication to
high-side devices in motor drive or power converter if the first barrier fails. This is called double isolation.

systems. Examples of applications that need To make systems compact and save cost, it is

isolation include industrial automation systems, desirable to have only one level of isolation that has

motor drives, medical equipment, solar inverters, the required electrical strength, reliability and shock

power supplies and hybrid electric vehicles (HEV). protection of two levels of basic isolation.
This is called reinforced isolation.
When isolation is used to enable the system to
function properly, but not necessarily to serve as a High-voltage isolation performance of an isolator

barrier against shock, it is called functional isolation. is quantified at the component level by parameters

Where isolation provides sufficient protection against such as maximum repetitive peak voltage (VIORM),

electrical shock as long as the insulation barrier is working voltage (VIOWM), maximum transient

intact, it is called basic isolation. Safety regulations isolation voltage (VIOTM), isolation withstand voltage

require basic isolation to be supplemented with a (VISO), maximum surge isolation voltage (VIOSM)

secondary isolation barrier for redundancy, so that and comparative tracking index (CTI) among

the additional barrier provides shock protection, even others. These parameters represent the isolator’s
capability to handle high-voltage stresses of

High-voltage reinforced isolation: Definitions and test methodologies 2 November 2014

different magnitude and transient profiles, and have This document discusses test procedures and
a direct mapping to realistic operating situations. results from high voltage testing on the ISO7842.
The definitions and test methodologies for these Test results demonstrate the exceptional high-
parameters are described in component-level voltage performance and reliability of this device, and
standards such as IEC 60747-5-5, VDE 0884-10 enable the system engineer to solve the toughest of
and UL 1577. Test methodologies differ slightly isolation problems with confidence.
for basic and reinforced isolators, and are more
stringent for the latter. VDE 0884-10 is defined Maximum transient isolation voltage
especially for magnetic and capacitive couplers and isolation withstand voltage
or isolators. Maximum transient isolation voltage (VIOTM) and the
When isolators are used in real applications, isolation withstand voltage (VISO) are both intended
systems and end equipment standards also to quantify the ability of an isolator to handle high
mandate certain minimum values of these isolation voltage across the isolation barrier for very short
parameters depending on the system line voltage, periods of time. During normal operation, the
and based on whether basic or reinforced isolation stress voltage across the isolation barrier is limited
is required. IEC 61800-5-1 (safety standard for by the maximum system line voltage. However,
adjustable speed electrical drives), IEC 60664-1 unintentional disturbances in the system, for
(insulation coordination for equipment within low- example, noise on the supplies caused by arcing or
voltage systems) and IEC 61010-1 (safety standard load changes, could briefly cause the voltage across
for measurement, control and lab equipment) are the isolator to be several times the line voltage. The
examples of systems and end equipment standards. isolator should be able to handle these transient
over-voltages without damage.
This document discusses, in detail, the definitions
of the above mentioned high-voltage Isolation VIOTM is defined by IEC 60747-5-5 and VDE 0884-10
parameters, their relevance to real-life system as the peak transient voltage that the isolator can
scenarios, and describes how they are tested and handle without breaking down. This is tested during
certified. This understanding is essential to compare certification by stressing the isolator at VIOTM for
the performance of competing isolation solutions, 60 seconds, followed by a partial discharge test at
to decide whether an isolator meets system-level 1.6 times VIORM for 10 seconds (see next section for
isolation requirements, to determine if an isolator can the definition of VIORM). This is called Method A testing.
be used for reinforced isolation, and to judge the VIOTM is tested in the production manufacturing
long term reliability of an isolator. process by stressing every device at VIOTM for one
second, followed by a partial discharge test at 1.875
The ISO7842 is a robust electromagnetic
times VIORM for one second. This is called Method B1
compatibility (EMC), high-speed, high common-
testing. Partial discharge is localized discharge inside
mode transient immunity (CMTI), quad-channel
the insulation material and is indicative of insulation
reinforced digital isolator. It uses capacitance-based
integrity. More details on Method A and Method B1
isolation with silicon-dioxide (SiO2) as the dielectric.
test profiles can be found in the appendix.
This device uses advanced processing technology,
precise packaging technology, and innovative circuit The value of VIOTM also can be used to determine
design, to deliver industry-leading high voltage and compliance to system-level standards, such as the
electrical performance. IEC 60664-1, that require a certain level of temporary

High-voltage reinforced isolation: Definitions and test methodologies 3 November 2014

overvoltage to be tolerated by an insulation barrier, 2000 devices. Also, each and every ISO7842 device
for five seconds, depending on the system voltage. will be production-tested per Method B1, with the
For example, an isolator with a VIOTM of greater stress voltage greater than 6840 Vrms to meet UL
than 6222 Vpk (4400 Vrms) meets the temporary requirements. These levels of VISO and VIOTM are the
overvoltage criterion for reinforced insulation per highest offered by any isolator in the industry in a
IEC 60664-1 for line voltages up to 1000 Vrms. standard 16-pin SOIC package.

VISO is defined per UL 1577 as the rms value It must be noted that ISO7842 easily meets the
of voltage that the isolator can handle without 4400 Vrms requirement for temporary overvoltage
breakdown for 60 seconds. It is tested during required for reinforced isolation as per IEC 60664-1
certification by applying a sinusoidal stress of VISO for for line voltages up to 1000 Vrms.
60 seconds. In production VISO is tested by stressing
every device for 1.2 times VISO for one second. For Maximum repetitive peak voltage
sinusoidal stress VIOTM and VISO are equivalent. and working voltage

TI tests its digital isolators to comply with UL, Maximum repetitive (VIORM) and working voltage
IEC and VDE requirements. To perform testing (VIOWM) are both intended to quantify the ability of an
for VIOTM or VISO, an HT9464 high-voltage isolation isolator to handle high voltage across its barrier on a
test system is used. This equipment is capable of continuous, day-to-day basis, throughout its lifetime.
applying the required transient overvoltage profile For example, an isolator used to provide gate control
according to Method A and Method B1, as well as to a high-side IGBT in a motor drive system sees a
measuring partial discharge. This test is performed periodic trapezoidal potential difference across its
by connecting all pins of side one and all pins of side isolation barrier as the IGBT emitter, to which the
two, then applying the voltage across the isolation isolator’s secondary side is referred, moves up and
barrier (Figure 1). down between high-voltage dc rails. This trapezoidal
stress is present whenever the motor is operational.

VCC 1 VCC 2 VIORM and VIOWM are defined in IEC 60747-5-5 and
IOs IOs VDE 0884-10. VIORM is defined as the maximum
repetitive peak voltage that the isolator can
IS O LA T IO N

IOs IOs

IOs IOs withstand, whereas VIOWM is defined as the maximum

IOs IOs rms, or equivalent dc voltage, that the isolator can
GND 1 GND 2 withstand over a specified long term. For sinusoidal
stress voltages, VIORM and VIOWM are equivalent. Both
values are specified by the manufacturer of the
isolator based on the manufacturer’s testing.
HT9464 VDE 0884-10 Ed 1.0 and IEC 60747-5-5 check for
VIOWM and VIORM through a partial discharge test that
Figure 1. Test setup for testing VIOTM and VISO
looks for localized discharges inside the insulation
The ISO7842 meets a VISO of 5700 Vrms per UL that indicate degradation in the insulation. The partial
and a VIOTM of 8000 Vpk per VDE0884-10 and IEC discharge test is performed along with the test for
60747-5-5. This is based on Method A testing over VIOTM using Method A tests during certification and
more than five wafer lots, and a total of more than Method B1 during production test.

High-voltage reinforced isolation: Definitions and test methodologies 4 November 2014

The soon to be released VDE 0884-10 Ed 2.0 also of 1.2, gives the value of VIOWM/VIORM. For a more
includes an additional requirement on VIORM and comprehensive understanding of the accelerated-
VIOWM. To comply with this new upcoming standard, stress test and the related extrapolation, refer to the
the manufacturer of a reinforced isolator must VDE 0884-10 Ed 2.0 standard.
provide accelerated-stress test data to the certifying An accelerated-stress test is performed both at high
agencies to prove that the isolator can handle 1.2 temperature (150°C) as well as room temperature
times VIOWM/VIORM for more than 37.5 years. During (25°C).
accelerated-stress tests, the isolator is subjected to
The values of VIORM and VIOWM derived from accelerated
varying levels of high voltage, much higher than its
stress tests, as mandated by VDE 0884-10 Ed 2.0,
expected working voltage, and the corresponding
give more confidence in the long-term reliability of
times to breakdown are recorded. Then, the voltage
the isolator for continuously applied high voltage. The
vs. time curve is extrapolated for lifetime prediction at
same cannot be said about the partial discharge test
the expected working voltage. For isolators that use
mandated by IEC 60747-5-5 and VDE 0884-10 Ed
silicon-dioxide (SiO2) as the insulation material, the
1.0, since there is no established relationship between
relation between time-to-failure and stress voltage
long-term withstand capability and partial discharge.
follows an exponential relationship. Consequently,
the log of expected time to failure reduces linearly
VCC 1 VCC 2
with voltage stress applied. Therefore, VDE 0884-10
IOs IOs
Ed 2.0 requires SiO2-based isolators to use the same

ISOLATION
IOs IOs
relation to curve-fit accelerated test data.
IOs IOs
Figure 2 shows the test setup used to perform IOs IOs

accelerated-stress lifetime tests. All terminals on GND 1 GND 2

side one of the isolator are shorted together, and
all terminals of side two of the isolator are shorted
together. The required high voltage, a 60 Hz sine
Highpot
wave, is applied between sides one and two to
AR 7715
stress the isolation barrier using a high-voltage
source such as the AR7715 Highpot. The stress Figure 2. Setup for accelerated-stress lifetime tests
voltage is applied continuously until the impedance
Figure 3 shows the expected lifetime projection of
between side one to side two drops below 4 MΩ.
the ISO7842 based on accelerated-stress testing of
At each voltage point, batches of at least 32 the isolation barrier used over five different wafer lots
devices are stressed. The resulting times to failure and a total of more than 2000 devices. The shaded
of the devices are fit to a Weibull distribution, and region indicates the safe operating area (SOA) of this
statistical analysis is used to find the time to failure device. Note that the actual test data is intentionally
that corresponds to <1 ppm failure rate. This time is not shown in the figure. The SOA includes a factor
then plotted in the voltage vs. time to failure plot. The of 1.2 de-rating as required by the standard and
procedure is repeated at different voltage points to is also based on a more conservative statistical
generate the entire voltage vs time to failure curve. extrapolation than required by the standard. The
This curve, when extrapolated to greater than 37.5 SOA can be used to estimate the expected lifetime
years, and further de-rated by an extrapolation factor at any given operating voltage.

High-voltage reinforced isolation: Definitions and test methodologies 5 November 2014

The <<1 ppm line indicates that much less than one supply mains (known as category III), operating at
device in one million is expected to lie outside 600 Vrms line voltages, IEC 61800-5-1, requires
the SOA. a minimum surge capability of 8000 V for

As shown in the SOA curve of Figure 3, the ISO7842 reinforced isolation.

can withstand a VIORM of 2121 Vpk and a VIOWM of Note that passing a surge test at levels greater than
1500 Vrms for more than 40 years. These levels of 10 kV has been widely used as the gold standard for
VIORM and VIOWM are the highest offered by any isolator reinforced isolation, though system level standards
in the industry, in a standard 16-pin SOIC package. allow for lower values of surge capability for systems
V IOWM 1.5 kVrms , 40 years with lower line voltages.
V IORM 2121 Vpk , 40 years
1.E+09

1.E+08

1.E+07
V SURGE
1.E+06 90% V SURGE
<<
Life Time (Sec)

1
pp

1.E+05
m

1.E+04
Safe Operating Area (SOA) 50% V SURGE
1.E+03

1.E+02

1.E+01
10% V SURGE
1.E+00
0 1000 2000 3000 4000 5000 6000 7000
1.2 µs 50 µs
Stress Voltage ( Vrms )

Figure 3. ISO7842 lifetime versus stress voltage. Figure 4. Surge impulse profile

Maximum surge isolation voltage Figure 5 shows the setup used to test surge
performance on the ISO7842. The isolator is
Maximum surge isolation voltage (VIOSM) quantifies
configured as a two-terminal device by shorting all
the ability of the isolator to withstand very high
the left-side pins to one group, and all right-side pins
voltage impulses of a certain transient profile.
to another group. Surge voltage is applied across
The surge test profile is shown in Figure 4. Surge
the isolation barrier using either the MIG1203 or the
voltages can be caused in an installation due to
MIG2403 surge generators, depending on the test
direct or indirect lightning strikes, faults and short
voltage required.
circuit events. As per IEC 60747-5-5 and
VDE 0884-10, an isolator claiming a certain VIOSM
VCC 1 VCC 2
must pass the surge test at a peak voltage of
IOs IOs
1.3 times VIOSM for basic isolation, and 1.6 times VIOSM
ISOLATION

IOs IOs
for reinforced isolation. An isolator can be called
IOs IOs
reinforced at the component level, only if it passes
IOs IOs
the surge test at a level greater than 10 kV.
GND 1 GND 2
The passing level of a surge test is also used to
determine compliance to system-level standards,
such as the IEC 61800-5-1, that require a certain
MIG 2403
level of surge capability for a given system voltage.
Surge Generator
For example, for equipment connected directly to
Figure 5. Surge test setup

High-voltage reinforced isolation: Definitions and test methodologies 6 November 2014

The test is performed by applying 50 pulses IEC 60664-1 classifies materials into four material
each for both positive and negative polarities of groups according to their CTI values:
the rated stress voltages. After the surge test, a Material group I: 600 V < CTI
partial discharge test per method B1, insulation Material group II: 400 V < CTI < 600 V
impedance test and a full functional production test Material group IIIa: 175 V < CTI < 400 V
are performed on the device. A device is considered Material group IIIb: 100 V < CTI < 175 V

to pass the surge test if it successfully passes all CTI plays a major role in determining the minimum
these tests after applying the surge voltage. To creepage, or shortest distance along the surface of
avoid arcing through the air, this test is performed in the isolator from pins on one side of the isolator to
dielectric oil. pins on the other side. A minimum creepage is re-
Based on testing on greater than five wafer lots, quired for a given working voltage depending on the
and a total of more than 2000 devices, the ISO7842 extent of the pollution present in the system
passes the surge voltage test at greater than environment. Using a mold compound with a higher
12800 V. Since this exceeds 10 kV, it meets the limit CTI allows the use of smaller packages, and saves
for reinforced isolators. The rated value of VIOSM is board space. For example, as per IEC 60664-1,
8000 V, according to the scaling factor of 1.6 a package with 8 mm creepage using a CTI-I mold
required for reinforced isolation. Passing a compound can withstand up to 1600 Vrms of
12800 V surge test also implies that this device working voltage, whereas the same package using a
meets the surge criterion for reinforced isolation for CTI-IIIa mold compound can withstand only
equipment connected directly to supply main, for line 800 Vrms.
voltages up to 1000 Vrms, as per IEC 61800-5-1. The ISO7842 uses a CTI-I mold compound. This
implies that it can actually enable a 1500 Vrms
Comparative tracking index
working voltage at the system level with a standard
When an isolator is placed on a system board as 8 mm creepage SOIC-16 package. In contrast,
part of end equipment in addition to its internal competing isolators using a CTI-IIIa mold compound
isolation parameters, the mold compound used in the same package can only enable a working
in its package is important. This is because when voltage of 800 Vrms at the system level, even though
high voltage is applied across the isolator, electric they may claim a higher value of VIORM/VIOWM at the
discharges on or close to the surface of the component level.
package, can cause localized deterioration in the
mold compound, resulting in a partially conducting Distance through insulation
path from one side of the isolator to the other. Distance through insulation (DTI) is the smallest
This phenomenon is called tracking. The ability of distance between the two voltage domains in
a material to withstand tracking is quantified by a the isolator internal to the isolation package.
comparative tracking index (CTI). Many end-equipment standards such as the IEC
60601-1 (medical electrical equipment standard)
specify a minimum required distance
through insulation.

High-voltage reinforced isolation: Definitions and test methodologies 7 November 2014

However, these standards have provisions that allow Conclusions
thinner insulation layers, provided they pass certain
The high-voltage isolation performance of an
tests. These tests are a subset of the type tests
isolator is quantified with different parameters, which
required per VDE 0884-10.
represent the isolator’s capability to handle high-
Historically, a higher DTI was a direct indication voltage stresses of different magnitude and transient
of isolation performance based on the insulation profiles. Various component-level standards define
material used. However, due to the new generation these parameters and the methodologies to test
of magnetic and capacitive isolators using higher them. This white paper discusses in detail the
quality insulating materials, a very high isolation definitions of these
performance can be obtained by a much parameters, their
smaller DTI. relevance to real-life
The ISO7842 has a minimum internal DTI of 21 um, system scenarios,
with a typical DTI of 25 um. However, the breakdown and describes how
strength of the dielectric material used, SiO2, is very they are tested and
high at 800 V/um. The quality of the dielectric used certified.
is the reason for this device’s superior high-voltage Results from tests on TI’s ISO7842 reinforced
performance. digital isolator, performed according to standard
This device meets the type test criteria of VDE procedures, are presented. This device meets the
0884-10 for reinforced isolation, proving that a DTI of transient overvoltage and surge requirements for
25 um using material with 800 V/um of breakdown reinforced isolation at both the component and
strength is not a matter of concern. system level, and enables reliable operation for
many years in the presence of continuous, high-
Table 1. Performance summary of the ISO7842
operating voltage. The test results demonstrate that
No Parameter Standard Value
this device marks a significant leap in TI’s capacitive
1 VISO UL 1577 5700 Vrms
VDE 0884-10 Ed high-voltage isolation capabilities, and at the
2 VIOTM 8000 Vpk
1.0 and Ed 2.0 same time delivers industry-leading, high-voltage
VDE 0884-10 Ed performance.
3 VIORM 2121 Vpk (for >40 years)
1.0 and Ed 2.0
VDE 0884-10 Ed
4 VIOWM 1500 Vrms (for >40 years)
1.0 and Ed 2.0
VDE 0884-10 Ed 8000 V (surge test pass
5 VIOSM
1.0 and Ed 2.0 level >12.8 kV)
6 CTI IEC 60664-1 CTI >600 material group: I
21 um (min) / 25 um (typ)
7 DTI NA Note: Breakdown field for SiO2 is
800 V/um

Notes:
1. ISO7842 also meets the VISO, VIOTM, VIORM and VIOWM values mentioned
in Table 1 per IEC 60747-5-5. However, the ISO7842 will not be certified to
IEC 60747-5-5 as that standard is specific to optocouplers and not
capacitive couplers.
2. VDE 0884 Ed 2.0 (soon to be released) is a revision of VDE 0884 Ed 1.0.
It has tighter constraints and additional requirements over IEC 60747-5-5
and VDE 0884 Ed 1.0 for VIOWM and VIORM.

High-voltage reinforced isolation: Definitions and test methodologies 8 November 2014

References
1. IEC 60747-5-5 Ed 1.1, Semiconductor devices – Discrete devices – Part 5-5: Optoelectronic
devices – Photocouplers, May 2013

2. DIN V VDE V 0884-10 Ed 1.0, Semiconductor devices – Magnetic and capacitive couplers for
safe isolation, Dec 2006

3. UL 1577 Ed 4.0, Standard for Safety for Optical Isolators, May 2000

4. IEC 61800-5-1 Ed 2.0, Adjustable speed electrical power drive systems, safety requirements,
electrical, thermal and energy, July 2007

5. IEC 60644-1 Ed 2.0, Insulation coordination for equipment within low-voltage systems, principles,
requirements and tests, Apr 2007

6. IEC 61010-1 Ed 3.0, Safety requirements for electrical equipment for measurement, control,
and laboratory use, general requirements, June 2010

7. ISO7842 product folder

8. ISO7841 product folder

9. ISO7821 product folder

10. Reinforced Isolation meets unmatched performance

11. Sarangan Valavan, Understanding electromagnetic compliance tests in digital isolators,

White Paper (slyy064), Texas Instruments, November 2014

Appendix
Method A Method B1

V ini=V IOTM
V ini=V IOTM
t ini=60s t ini=1s
V m=1.6 x VIORM V m=1.875 x VIORM
V ini t m=partial discharge V ini t m=partial discharge
measuring time =10s measuring time =1s

Vm
Vm

V IORM V IORM

t ini tm t ini tm

Figure 6. Simplified Method A test profile Figure 7. Simplified Method B1 test profile

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