rv Choose the Correct answer from the following given alternative 1+ When the temperature ofa doped semiconductor is increased, its conductivity (A) Decreases, increases. (©) Increases or decreases depending on whether itis p- or mtype. (D) Does not change. 2. Which of the following doping will produce a p-type semiconductor: (A) Germanium with phosphorus (B) Silicon with Germanium (©) Germanium with Antimony (D) Silicon with Indium 3. Inan intrinsic semiconductor, the Fermi-level is: (A) closer to the valence band (C) closer to the conduction band (© within the valence band (D) midway between conduction and valence band 4. The diode in which impurities are heavily doped is: (A) Varactor diode (B) PIN diode (©) Tunnel diode (D) Zener diode 5. The depletion region in a Junction Diode contains: (A) only charge carriers (of minority type and majority type) (B) no charge at all (C) vacuum, and no atoms at all (D) only ions, that is immobile charges 6. A semiconductor has . temperature coefficient of resistance, (A) Positive (B) Zero (©) Negative (D) None of the above 7. The random motion of holes and fee electrons due to thermal agitation is called ... A) Diffusion (B)Pressure (©) Ionization (D) None of the above 8, Inan Naype semiconductor, the position of Fermi-level: (A) Near valance Band (B)Near Conduction Band (C) In valance Band () In conduction Band (+)a. i ‘anode is connected to thy itis -biased, and the anos conduets when it is forward: 9, Adiode through a limiting resistor. / i ly (B) negative supply (Chat (Dat 10. You have an application for a diode to be used in a tuning circuit. A type of diode tou “ — (B)a Schottky diode, an LED, (© aGunn diode, (D)avaractor. 11. Refer to this figure. Which symbol is correct for an LED? > a ] 0 Hine Cre e@ & ® Aa @b Oc Ma (Be 12. The process of emitting photons from a ‘Semiconductive material is called: (A) phototuminescence ®) gallium arsenide, (© clectrotuminescence. ©) gallium phosphide, 1} For the BUT operat inthe stration region, the base-emitter junction must be biased and the base-collector junction must be biased. (©) forward reverse reves, forward (COreverse, reverse '4-A transistor in common emiter mods has: (A) «high input resistance and iow. Output resistance dtm Ome WYK fh Coupler caller {ae ow “Ee Leyes7 \ { ois \ qe? “CS © t 15. Ina clamping circuit, the peak-to peak vollage of the waveform being clamped is: (A) affected by the clamping (B) not affected by the clamping (C) determined by the clamping voltage value (D) determined by the ratio of ms voltage ofthe waveform and the clamping voltage 16, The forward characteristic ofa diode has a slope of approximately SOmA/V ata desired point. The approximate incremental resistance of the diode is (a50a 350 na @)100 17. Identify the condition for a transistor to act as an amplifier. 95 aN (A) The emitter-base junction is forward biased and the base-collector jt biased junction is reverse (B) No bias voltage is required (C) Both junctions are forward biased (D) Both junctions are reverse biased 18. A collector characteristic curve is a graph showing ... (A)emitter current (Ie) versus collector-emitter voltage (Vce) with (Ves) base bias voltage held constant ollector current (Ic) versus collector-emitter voltage (Vt) with (Vas) base bias ‘voltage held constant (C)collector current (Ic) versus collector-emitter voltage (Vc) with (Vip) base bias voltage held constant @)collector current (Ic) versus collector-emitter voltage (Vcc) with (Vpn) base bias voltage held constant 19, Ina JFET, at pinch-off voltage applied on the gate: (A) the drain current becomes almost zero (B) the drain current begins to decrease (©) the drain current is almost at saturation value, (D) the drain-to-source voltage is close to zero volts. {+}the Emitter(E), Base(B), and Collector(C) region varies respectively as: = Grom Betercon (@)E>C>Bandc> E>B (QE>B>CandE>C>B D. C>E>BandC>E>B 21. The lowest output impedance is obtained incase of BIT amplifiers for (A) CB configuration (8) CE configuration (©) CC configuration, (D) CE with RE configuration. 7. As the temperature ofa transistor goes up, the bascemiter resistance . (A)Decreases @) lncreases (©) Remains the same (D) None of the above 28 Which ofthe following isnot a FET amplifier Confguation: A)Common base amplifier 8) Common drain amplifier Common source amplifier (©) Common gate amplifier 24. The current amplification factor in CE configuration is Aa ®)p+1 (Oovp @)B 25. With the positive probe on an NPN base, an, ‘ohmmeter reading between the other transistor terminals should be ..... (A)open ®) infinite (© low resistance (high resistance 26. The gate voltage in a JFET at which drain unent becomes zero isealled voltage (A) Saturation ®) Pinchot (©) Active ©) Cor 27. A MOSFET differs from a JFET mainly because: (A). Of the power rating (B) the MOSFET has two gates | (©) MOSFETs do not have a physical ebannel | (C) the JFET bas a PN junction | 28. The constant-current region of a JFET lies bewween: (B) Cut off and pinch-off | (A) Cut offand saturation (©) Zero ana DSS (©) Piaeh-offand breakdown~ 2, fn mechanic! DMOSPET with a pit, VG is operating in, (A) the depletion made (i) the enhancement ruthie (C) oaotf (19) vation 20. Desin content in the canatent-curenttegiem incaraves hens (A) the gates hin voltage dezaraars (B) the gate ro-amatce bias voltage incteates (C) th deain-tn-asnce vollage increases (D) the drain-tn-anntce voltage decreases 31. In the voltage range, Vp < VD < BYDSS of en ideal SFET or MOBHICE (A) Tee drain current varies neatly with YDS. (B) The drain corrent is comatent, (O) The drain current varies nemlincashy with VIS, (D) The drain current isan off 232. The wal gan of s raultinage acplifir fx lens than the pride of the gains Of individsal stages de to (AyPorwes lone in the coupling device (SyLiading effort of the next stage (Cithee wx: of rasny transistor (Dfthe wse of many capacitens 33. Enbenomnent mode device ats ea ___ewitch, depletion mode acta aa ___switals. | (A) open, lowed (8) chened, oem (C) open, een (D) clone, close 34, Depletion mode MOSFETs are rte comrcuniy weed 2s (A) Switches (8) Resistors (C) Buffers (D) Capacitors 35, Entucocent reode MOSFETs are more commonly used 23, (A) Switches (B) Resistors (C) Buffers (D) capacitors 36, What configuration is widely preferred in cascading amplifiers? (A) Common Emitter (B) Common Base (C) Common Collector (Dy Coramon Source J s37, Compared to bipolar transistor, a JFET has: ‘ (A) lower input impedance (8) higher voltage goin (C) higher input impedance and high voltage gain (D) higher input impedance and low voltage guin 38, What happens to bandwidth if the total gui increased in easeade amplifiers? (A) Increases (B) Decreases (©Constant (D) Remain Same 39. The principal advantage(s) of MOSFETs over BJT is (are) (A)Their biasing networks are simpler (8) Their drive requirements are simpler. (C) They can be connected ‘in parallel for added drive capability, (D)All of the above 40. If As, At and Ap represents the voltage gain, current gain and power gain ratio of an amplifier which of the below is not the correct expression for the corresponding values in decibel? (A) Current gain: 20 tog Av db (B) Voltage gain: 20 log Ay db (© Power gain: 20 log Ap db (D) Power gain: 10 log Ap 41. An amplifier has @ voltage gain of 100 V/V and a current gain of 1000A/A. the value of the power gain decibel (db) is: (A) 30 db (B) 40 db (©s04b D) 60.db 42, What is meant by stability of an amplified signal? (A) The amplified signal must have a finite amplitude (B) The amplified signal should not have self-oscillation ©) The input and the output signal must be proportional (D) The ratio of the input and the output signal must be finite 43. Which type of power amplifier is biased for operation at less than 180° of the cycle? (A) Class A (B) Class B and AB (©) Class (D) Class D 44, Class, amplifiers are normally operated in a push-pull configuration in order to produce an output that is a replica of the input. (wa B «ec (©) AaB