ECE318:CMOS VLSI Design

Unit 1
MOS Transistor
MOSFET
Structure
N-channel MOSFET
• nMOSFET

a) Cross section and circuit symbol for an b) Cross section and circuit symbol for an
n-channel enhancement mode MOSFET n-channel depletion mode MOSFET.
BJT Vs MOSFET
• BJT provide more drive current and therefore high speed IC
• MOSFET provide less drive current compared to BJT
• MOSFET offer very high input impedance at gate so it takes very low
input current (Ig=0)
• Power consumption is less in MOSFET
• BJT is bipolar device and MOSFET unipolar
• BJT is current controlled and MOSFET is voltage controlled device
• BJT is less stable for temperature compared to MOSFET
MCQ
Q1. The basic advantage of the CMOS technology is that
a) It is easily available
b) It has small size
c) It has lower power consumption
d) It has better switching capabilities
Q2.The N-channel MOSFET is considered better than the P-channel MOSFET due to its
a) low noise levels
b) TTL compatibility
c) lower input impedance
d) faster operation
Q3. Consider an ideal MOSFET. If Vgs = 0V, then Id = ?
a) Zero
b) Maximum
c) Id(on)
d) Idd
 MOSFET Operation
• When VDs increases to the point where the potential drop across the oxide at the drain terminal is
equal to VT, the induced inversion charge density is zero at the drain terminal. This effect is
schematically shown in Fig.
• At this point, the incremental conductance at the drain is zero, which means that the slope of the Id
versus Vds curve is zero. Vds(sat)=Vgs-VT

Fig: n-channel enhancement mode MOSFET (a) with an applied gate Fig. ID versus VDS characteristics for small
voltage VGS <VT and (b) with an applied gate voltage VGS >VT. values of VDS at three VGS voltages.
MOSFET Operations

Fig. Cross section and Id versus Vds curve when Vgs> VT for (a) a small VDS
value, (b) a larger Vds value, (c) a value of Vds=Vds(sat), and (d) a value of Vds>Vds(sat).
 Id Versus Vds Curve
• When the VDS value increases. As the drain voltage increases, the voltage drop across the oxide near the drain
terminal decreases, which means that the induced inversion charge density near the drain also decreases.

• The incremental conductance of the channel at the drain decreases, which then means that the slope of the ID
versus VDS curve will decrease. This effect is shown in the ID versus VDS curve in the fi gure.

Fig. a) Id vs Vds b) n-channel

MOSFET
Id vs Vds
• When VGS changes, the ID versus VDS curve will change. We saw that, if VGS increases, the initial slope of ID
versus VDS increases.
• For MOSFET in linear:

Fig. Family of ID versus VDS curves for an n-

channel depletion mode MOSFET.
MOSFET in Saturation
MCQ
Q3. In saturation region, MOSFET act as
a) closed switch

b) open switch
c) amplifier
d) oscillator
Q4. In linear region, drain current is proportional to

a) (Vgs-Vt)
b) Vds
c) Vgs

d) Vt
Q5.Channel depletion in p-type substrate occurs at
a) 0<Vgs<Vt b) Vgs>Vt c) Vgs<0 d) None of the above
Derivation of Id vs Vds
• Consider a small strip of thickness dx in
x-direction. Vx is drift velocity and Cox is
oxide capacitance per unit area and Vt
threshold voltage.
∈𝑜𝑥
• Consider 𝐶𝑜𝑥 =
𝑡𝑜𝑥
• Where ∈𝑜𝑥 (=3.45x10-11F/m) permittivity
of SiO2 and tox oxide thickness
𝑑𝑥
• 𝑣𝑥 = drift velocity in x-direction
𝑑𝑡
Contd.
Electron charge dq in infinitesimal thickness dx
𝑑𝑞 = −𝐶𝑜𝑥 Wdx[(Vgs-Vx) − VT]
𝑑𝑉𝑥
Since 𝐸𝑥 = −
𝑑𝑥
𝑑𝑥 𝑑𝑉𝑥
=𝑣 =-𝜇𝑛 𝐸𝑥 = 𝜇𝑛
𝑑𝑡 𝑥 𝑑𝑥
𝑑𝑞 𝑑𝑞 𝑑𝑥
𝑖𝑥 = =
𝑑𝑡 𝑑𝑥 𝑑𝑡
𝑑𝑉𝑥
𝑖𝑑 =-𝑖𝑥 =𝐶𝑜𝑥 W[(Vgs-Vx) − VT] 𝜇𝑛
𝑑𝑥
𝐿 𝑉𝑑𝑠
‫׬‬0 𝑖𝑑 𝑑𝑥 = 𝜇𝑛 𝐶𝑜𝑥 W‫׬‬0 [(Vgs−VT) − Vx]d𝑉𝑥
𝟏 𝑾
𝒊𝒅 = 𝝁𝒏 𝑪𝒐𝒙 [2 𝑽𝒈𝒔 − 𝑽𝑻 𝑽𝒅𝒔 -𝑽𝒅𝒔 𝟐 ]
𝟐 𝑳
contd.
• Drain Current in saturation region, can be expressed as:

𝟏 𝑾
𝒊𝒅 = 𝝁𝒏 𝑪𝒐𝒙 [𝑉𝑔𝑠 -𝑉𝑇 ]2
𝟐 𝑳
Transconductance
• Transconductance
𝜕𝐼𝐷
• 𝑔𝑚 =
𝜕𝑉𝑔𝑠
𝑊𝞵𝑛 𝐶𝑜𝑥
• 𝑔𝑚 = 𝑉𝑑𝑠
𝐿
Flat Band voltage
• Flat band voltage is defined as the applied voltage such that there is no band
bending in the semiconductor and as a result zero net space charge in this region.

Fig. Energy-band diagram of a

MOS capacitor at flat band.
Energy Band Diagram
N-channel MOSFET with P-type
substrate

Fig. MOS capacitor with a moderate positive gate bias, showing

(a) the electric fi eld and charge flow and (b) the induced space
charge region.

Fig. Energy-band diagram of a MOS capacitor with a p-type

substrate for (a) a zero applied gate bias showing the ideal
case, (b) a negative gate bias, and (c) a moderate positive Fig. Energy-band diagram of the MOS
gate bias capacitor with a p-type substrate for a “large”
positive gate bias.
Threshold Voltage
• If a gate voltage is applied, the potential drop across the oxide and the surface potential will
change. We can then write

There is zero net charge in the semiconductor, and we can

assume that an equivalent fixed surface charge density
exists in the oxide. The charge density
on the metal is Qms, and from charge neutrality we have
Qms+ Qss =0

We can relate Q’m to the voltage across the oxide by

Threshold Voltage
• The threshold voltage is defined as the applied gate voltage
required to achieve the threshold inversion point.
• The threshold inversion point, in turn, is defined as the
condition when the surface potential is φs= 2φfp for
• Here Q’ss equivalent oxide charge and Q’mt positive charge on
metal gate at threshold.
Maximum space charge density
• Qmt+Q’ss= 𝑄 ′ 𝑆𝐷 (𝑚𝑎𝑥)

Charge distribution in a MOS capacitor with a p-

type substrate at the threshold inversion point.
Substrate Bias Effects
• In MOSFET circuits the source and body may not be at the same potential.
• Considering the charge neutrality condition through the MOS structure, the positive charge on the
top metal gate must increase to compensate for the increased negative space charge in order to
reach the threshold inversion point. So when Vsb > 0, the threshold voltage of the n-channel
MOSFET increases.

Fig. (a) Applied voltages on an n-channel MOSFET. (b) Energy-band diagram at inversion
point when VSB=0. (c) Energy-band diagram at inversion point when VSB>0 is applied.
Frequency Limitations and Equivalent circuit
• small-signal equivalent circuit for the MOSFET is needed in order to mathematically
analyze electronic circuit.
• Model is based on the inherent capacitances and resistances
• The equivalent circuit contains capacitances and resistances introduce frequency effects.

Fig. Inherent resistances and capacitances in the n-channel MOSFET structure.

 Equivalent circuit
➢ The voltage V’gs is the internal gate-to-source voltage that controls the channel current. The
parameters CgsT and CgdT are the total gate-to source and total gate-to-drain capacitances.

➢ This resistance is associated with the slope ID versus VDS. In the ideal MOSFET biased in the
saturation region, ID is independent of VDS so that rds would be infinite.
➢ In short-channel-length devices, in particular, rds is finite because of channel length modulation

Fig. Small-signal equivalent circuit of a

common source n-channel MOSFET.
Contd.
• Fig. Simplified, low-frequency small-signal equivalent circuit of a common-source
n-channel MOSFET.

a) Simplified, low frequency small-signal equivalent b) Simplified, low frequency small-signal equivalent
circuit of common-source n-channel MOSFET including circuit of common-source n-channel MOSFET
source resistance rs. including source resistance rs.
MCQ
Short channel effects have substantial adverse effect in transistor of
a) 180nm technology node
b) 90nm technology node
c) greater than 45nm technology node
d) less than 45nm technology node
Most commonly used insulating material in MOSFET

a) Al2O3
b) SiO2
c)As2O5
d)GeO2
MCQ
Flat band potential can be expressed as

a) φms

b) φms-Qss/Cox

c) φms+Qss/Cox

d) None of the above

Review Questions
Q1. What is flat band potential?
Q2. Define MOSFET threshold voltage?
Q3. What is short channel effect?
Q4. Draw the symbol of n-channel and p-channel MOSFET.
Q5. Give current voltage relationship of MOSFET in saturation region.
Q6. Give current voltage relationship of MOSFET in linear region.
Q7. Describe channel inversion in n-channel MOSFET.
Q8. Describe channel depletion in n-channel MOSFET.
Q9. Why polysilicon is preferred in place of metal gate.
Q10. Why high-K dielectric constant insulating material is preferred in place
of oxide.
Q6. MOSFET can be used as
a) Current controlled capacitor
b) Voltage controlled capacitor
c) Current controlled inductor
d) Voltage controlled inductor
Why Polysilicon?
• The threshold voltage (and consequently the drain to source on-current) is determined by the
work function difference between the gate material and channel material.
• When metal was used as gate material, gate voltages were large (in the order of 3V to 5V), the
threshold voltage (resulting from the work function difference between a metal gate and silicon
channel) could still be overcome by the applied gate voltage (i.e. |Vg - Vt| > 0).
• As transistor sizes were scaled down, the applied signal voltages were also brought down (to
avoid gate oxide breakdown, hot-electron reduction, power consumption reduction, etc).
• A transistor with a high threshold voltage would become non-operational under these new
conditions. Thus, poly-crystalline silicon (polysilicon) became the modern gate material because it
is the same chemical composition as the silicon channel beneath the gate oxide.
• In inversion, the work-function difference is close to zero, making the threshold voltage lower and
ensuring the transistor can be turned on.
• Polysilicon is also more stable for temperature variations.
• In place of polysilicon we can also use high work function metals like Ni, Co, Ti and Pt etc.
Why high-K dielectric insulating material in place of SiO2?
The requirements of a new oxide to replace
SiO2 are as follows:
➢ The metal oxide must have a permittivity
higher than Si, industry targets values
nearly between 15 to 20.
➢ Aiming towards less leakage of current, the
material should allow less leakage current.
➢ Density of defects must be less
➢ The oxide is in constant contact with Si and
hence must be thermodynamically stable
with it.
➢ High breakdown field and low loss factor .

Drawback: High-K degrade mobility due high

threshold voltage.
Energy band and energy bond
• Energy Band diagram: It gives information about valence band, conduction band and band gap
which important to categorise semiconductor and their performances.
• Bond Energy: Bond energy is directly related to the melting temperature of solids.
• For different types of bonds, the melting temperature scales with the bond energy. Both ionic
(e.g. NaCl, MgO) and covalent bonds (e.g. Si, C) have high bond energies and consequently high
melting temperature.
Query??