EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023

Name: ____________________________ Student ID: _______________

Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V

1) (20 points)
a) (6 pts) Consider the circuit in Fig. 1(a), assuming β = 100 and IS = 7x10-16 A. If R1 = 10 kΩ,
determine VB such that IC = 1 mA. (VT = 25mV)

b) (7 pts) In the circuit of Fig.1(b), determine the terminal voltages of the transistor and state its mode of
operation. Assume IC = 0.5 mA, IS = 3 x 10-16 A, and VT = 25mV.
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
c) (7 pts) Determine the mode of operation by calculating terminal voltages and currents in Fig.1(c). Use
β = 100 and IC = 0.2 mA.

Fig. 1(a) Fig. 1(b) Fig. 1(c)

2) (15 points) An amplifier is designed to amplify a signal received by a 50-Ω antenna, as shown in Fig. Q2
(VB is a DC voltage).
(a) (5pts) Determine the required bias current (IC) if the input impedance of the amplifier must “match”
the impedance of the antenna (hint: use the antenna ac model to consider the antenna as the source).
(b) (5pts) If a 50-Ω load RL is added to this circuit through Cc capacitor and RC assumed to be much
larger than 50-Ω, what is the voltage gain, with RL included? (Assume VA = ∞, β = ∞ and Cc = ∞).
(c) (5pts) Draw the DC and the small signal model of the circuit for part (b).

Fig. Q2
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V

3) (35 points) The circuit of Fig. Q3 is designed for a collector current of 0.25 mA. Assume VBE = 0.7 V,
β = 100, and VA = ∞.
a. (5pts) Determine the value of R1.
b. (5pts) What is the percentage change in IC if β is increased by a factor of 2? Determine operating
mode?
c. (5pts) How would you improve the circuit for a better Temperature, β independence and stability
of the bias points. Your suggestions should be based on this circuit in Fig. Q3 hence each argument
here should be substantial with respect to this circuit and parameters.
d. (5pts) Calculate the small signal voltage gain, input and output resistances of the common emitter
amplifier (CE) with RE resistance configuration in Fig. Q3. (β = 100, and VA = ∞).
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
e. (5pts) Modify this circuitin Fig. 3 to improve the voltage gain with a linearity trade off. Calculate
the voltage gain of the circuit after your modification (Hint: think of a bypass capacitor).
f. (5pts) If a speaker of 50-Ω resistance is connected to the amplifier as a load, find out the small signal
voltage gain of the amplifier in (e) after the speaker is attached as a load.
g. (5pts) As you might have already discovered in (f) that attaching a 50-Ω speaker as a load reduced
the gain, due to the mismatch in between output resistance of the amplifier and load resistance.
Identify a solution(s) and implement it in the circuit to increase the gain or maximize power transfer to
the load. Provide performance specifications of your proposed solution (Hint: think of a buffer).

Fig. Q3
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
4) (17 points) For questions 4 and 5, answer with maximum a few sentences
Note: Combining two sentences with many “and”s will not be considered as one sentence.

a. (2 pts) Define the type of transistor represented in Fig. Q4 by the energy band diagram (a) and box
representation (b) below. Label each critical areas/terminal in the boxes and also points in the band
diagram.

➔
b. (2 pts) How many terminals and currents there exist in the device and name each?
➔ Emitter, base, collector (3)
c. (2 pts) Is this majority or minority or both carrier-type device, give a brief explanation/justification for
your answer?
➔ Both majority and minority carriers contribute current generation but minority carrier diffusion
dominates current
d. (3 pts) How one can generate a forward active mode of operations, show operation conditions /
principles on the box-representation with corresponding bias applied and carrier movements in each
are of the box?

➔
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
e. (3 pts) Define the role of the center region/terminal in above representations and effect of its width on
the operation principles and performance parameters of the transistor, under ideal and non-ideal cases?
➔ Diffusion of minority carriers and recombination process in the base region control the current in
this terminal and longer the width of base region lower the diffusion and higher the recombination
process probabilities. Ideally no recombination process takes place(alfa equals 1, beta equals
infinity). Base-width modulation also generates early effect.
f. (3 pts) Define which terminals of the transistor used as input and output terminals and provide brief
justification for your answer.
➔ Input terminals are only from base and emitter because EBJ is the input junction for the device
operation.
g. (2 pts) Is this device symmetric or asymmetric and what would be the implications of your answer to
the first part, in terms of performance parameters?
➔ The device is asymmetric. Performance parameters will be factors or orders of magnitude less, if
the device is operated as symmetric device. (difference between forward active and reverse active
mode operations is a good example for performance comparison of symmetric and asymmetric
operation)

Fig. Q4 Fig. Q5
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
5) (13 points)
a. (2 pts) Label critical points/areas on the energy band diagram (a) and box-representation of the device
(b) shown in the Fig. Q5.

➔
b. (2 pts) Under what condition/mechanism of mode of the device this band diagram is obtained?
➔ The device is in thermal equilibrium.
c. (1 pts) What is the name of this device?
➔ The name of the device is PN junction diode.
d. (4 pts) How do you generate a current and no current flow in this device and draw/revise representing
box-model and energy band diagram under each (current or no current) condition?
➔ When the pn junction diode is forward biased, a current is generated and when the diode is in
reverse biased, current does not flow (ideally).
EE 202 ELECTRONICS CIRCUITS I SPRING 2022 - MIDTERM I 16 April 2023
Name: ____________________________ Student ID: _______________
Note that when / if otherwise is not given, you can use |VBE|= 0.7 V, VT = 25mV, and |VCEsat| = 0.3 V
e. (4 pts) Show the current direction and justification of the direction. What are the current types taking
place in this device and how each one is generated?

➔ Diffusion current and drift current are the two types of currents in a pn junction diode. Drift
current arises from the movement of carriers in response to an applied electric field. Diffusion
current is created by the movement of charge carriers from higher concentration to lower
concentration.