KVSSn +1a zzna

EDC
UNIT-12
CTOR pHYLI Ce
SEMI CoN DU
Band theon of t a Cry t a l
arangament atoms
in
ovalent
A 3D and
mit acdng
Due t les inte ao clenely paca
numbe are
band
lage
bond4 a
alled
Valene
levels
diseret eneq
valen te s
OCcuid
Vaen band
C o n d u ttiom and retrom an
enerty a f
f o r b i d d e n
enerty levek
disere te Condu ctor
Semi ondu slor
Tntulato1
. CB
G lev hees
( )
At o'k
( mS
Gl2 e s
 Cemi conduclov Curent densi > Current (er wyi
w
Tntfnsic (O pura A/m3 (Conelrati)
neo levels ecaule
Extinsic (on imfure hos T= n e v
T am /m
I- nemE
T14 tera nlent)
m Ge32(
(S) Eg = l-1ev
S i I s 2 s 2p6s 2
o72 ev nenen
(G)EG =
Condu v i y » (ehm-m)
auston
ion - es
obi l and condudivily in menl diccipatid-
Po w e
Aet )
electodn
meta u Cpur)
îynicSemi
conducdor
iV
me vem ent
an
Random
in
and holey
- Ce fons eA
Cumt
AV 11tr
a n ree Pih
Collisions atan
Charq
uwit pocitive aled
on eledic
ield
rte
+Erteanal feld omt ensi
eleatic ielc
Steady AteLpecd v
V- E
nobil t y ( / v a t ec
K nalat
mobr A t

ConduClod
ne. 9 4
Atreom
tem (Cem condu loo)
CeB due o
moverom VB
p
 for mrfnticfemionauw
(00
Abrente a in a Covalent bona empy
T p e = 1y
f 1&oa =
Vialeny enesqy level caledHole (V Ge, Aln =fo0,
J4= 500
Siy Un /300/
=
pe
movemest rox 6191
movement oppesile
t hoe Conductviy
Tains
iand repeata FoT
a egne e i temperature
t e m p e r a t u r e
m one bond #lk hele Collisieng
es)
Taihes 0:47/¢
inVBhetre TRiAtance alecreau
deernau
with
h oi
vity
For melals
Tei+ivi
P heles Censtitu CeurnE aondulos
Seri
CB rait ef tempermture
end gneratim happi
PRembinatiomn
Extinic Semi onduc when addea
w be ComU aN
a n
holeCmduclin n Ceiconducdor beomu
A Puree p e n t aV a l e n t

impuoi
impuiy
O p e n t a V a l e n t
a
+ V a l e t

(on
Semi Cndutor
extrinei1c
tmpuity
Fenera lly
are
no vem ent pertavalent
-hoe Donor
ov antmo
ny
a T A e n i c
(s
P h a s p h o r v u 4 e
Charge C a i t
BiSmuthy riHeg
m pu
hole pestive d o n o r
G
Conduciviy afeni Conduc
Oe
onductivi7
hole pair,
to1th
toth e ad
boh then.
Curent dentty
E
muntpup)e£
=
T eO
44 hole and
44
and
hole e
mobiiN
Mn -
 Doner eyey
e n o r e

CB a05-) i
leAel leV ho
E
VE
Ge
ee h co
Fmpuri ty Cu
p e n t a U a l e n t
Cea
lent kend a 44)
i hY Cendu ctio n
a aeptor
a teplor
energ
energ
7-frrm
Otlev
t enter
Tmpuri t
vil m
and
and ee O
necds
ut acept band
band
The
neak
to Vakn
Vakny
levwl
level
ahd --or
a a hr
level no e E
domo
denos Cc
C ceeppt t
iri but
called t
Casiy VB
a
e n e y level Can
move heu
in
numbe e
lewel meas t CB
heles.large
men an npe
Semi Conduk n CB
r a i l e s CB
Thc
deereau
becauhe
and holes in CB.)
cB
iition
oppesiton -Jorce
Jorce Ev
and offe
Telombination
VB
ACcepl (O)valent ( F ) ertnsic eni
erintic
en
r e
P-yre
Cmafeity
Makes C m e
c c e p l o r M a k e
he k)
hek)
galtun(en indiun) o a
a ine 1mpity Cboren, 3e il)
Conda clos
he Corduclor
n t i nsiCfemi mitosi majoit-e)
added t an one roelent
cand leave doner
3 Cevalent bena
an eE.
bord fhert 4
Conthte aa hole.
holk.
onttithutzr
bond
iM 4th
he VaCanu nd
a tuch
uch impn ties
impuviti
hole4 atcert e 11 lecomut a
eh
Auch and If lecome
impuritis
re nceplo
Senicendutlor
-4e
 he
in aCemt Ondutlm Contentontíon 'n af
char
Charge densttiea
M
Tn Pn n?
intinctetnnr
Tom
In Seni ondutlir
an
- P 71i) ND
emi Condutto. Similasy r -yp
ondu t i i eleckcally netA
he emi
dener aDng. Np tr
let Np t entera ton Chakges
No petitive
irnA Contitut
Positive charge denki Drit and Difuaion
Tetal No+P
m a ke NA negatiVe
Na aCetr ions Diftution. charqed
simila mon-uniform Co ncentration
Charges m Due to
the
charqi move
asemíton
r e q i o n

duclor
T r a t C o n c e n t a t i o n
to
Tal Natn ParTcle
heutal
heutral Concentation.
ik
elcall
elucally
from
tlor
r g i o n m a l l u s
ondu qhes P Varies
Lemi Charqe
t i n te posiive
.
' C o n t e r t r n t i o n
and Con Centrmton
densty= -ve Ca* the
NDtP
N t dentty for CamierA)
y
d i s t r n t e
with densi y
dtdx
r a d i n t
In m-tPe NA O n>>P Sucta ce
Co n e n r t i m
high
C o n t e a t i o y
hol moVve acr
Ludace
oyfuron
and
) No deni
a cuen
f Cant|*
hole-Cumeo
 batta eNDvement C h a r q
Thi Combfned p e e
influen cu c e y t e n a l
undek the
Carier
Congtithutz a Cumt Called drit
Drdituson onttrn 4rholes (Sapmce elactrhe feld aumntdeni due tb chare
he d n
Curren and hole are hee
are h e
Fer e Comiers Sueh as e e pendiculav
thnugh aYm
T n e Dn d. Cumt aing
hermo dnamiC
phenomena dineton 4 u A
Statiati cally duntil duu b
D, M a e dryt Qunt
In ELUn E
n
Dn uL to hotus Peupe oncentation
hok
and
ature) P
vo Hage ce 4emper
h t p m o b i l i t r y ( m w - t e e )
T
l,6Do e
cha a e
-23
a
a ing
The Hall 41ect clo)
R3 Cmetal
on Lemicondu
Verte
meqneie
apeti'me atana
L placed
in E i indu
Tn ted
du ced
39D. 6E ar
2 reld ?
At reom tmp. M = C u r t
eltche
diculas
to boh
eHect
H a lefect
an
B Perpen thal
frela airection
a
a lC
lael ld
ed
he
Drift acree +he C m i
fn p h e n o m e n o n
applied This
T his
îne
ohern an
deeh Fld t attan a Ceatain to
detem
Loo n-ype)
Cked
Camiers
atam P-tyre
onducler, the
haye aeni conduclor
type ¢
drit veleity 9 C a m i e C o n t e r r a i M
Mobi kty
and
E M mobilbty t chae 3)Conductivity
y
Cariea C
AThe holes move foward
E oluc Jield
t a m i n s l and e
ve
tfveturinal of nteni ty
 and B' ir in e 7,
is in+Ve X he haVe E
and
eeted
exrred
it n he
n h e --
v ve
e
d ditana bw 1
ofll be
aore
he aMo
Camier
he Cumnt
Wa T C u e t Aeniy
Pcharage Speimey
Uwidth in
VyEd = BVd
BTa
diretion emagnelit
ela
P OtherA
m
m e a t u r e d
fon
'P Can be
Cument i
cior K m-P above eguaio
Semi Condu
r o r c e d 0 a y L o nc e r t a i o n
anL eA P=n e
The
9 ar
and
a n d hey
They b e g a t i e
es ill be
e cau Cide 1
megativee e holes P=Pe
otentiaL han tStde
de 2 appears
VH lall voltage
a otential +lall Cocprcient
ahd 2 NOW
Ce
ehoen Sura
tae
e ele.dic Jrela RAP
eutlibium
Dn he
murexet a V4
The
Hall epect
magnelt RH B
t Hence
due balances o-o
a O n
nee
nten ity on h e arie
ohich
to
Chara
cha
pr
riim
maarrly
y
ferce d n t ied) Conduc m ad u
Cign, rejation b/w
mea
smobil"g
( Va
u m p b i l 7 t
4
orce
C EB e v Pu u
onducivi
y in rn
charge On Carile
e magnitde RH
R t
n Specd
d r f t Speed omthermal
dibuhin
rand
RH Particley1
Femi Dit -hunction Obterve rphs F EEF E-,ebV
equatiom(E) alled he pesmi-pivnc -T=oK
unction, and pecites the frnction -1=3a0k
pukubility unde O8 7-2500k
at ener
E (eu) ocauped
all stntz
Condticns
hevmal egut libiun
O
it n 4ourd that
0
tnies E-Ef e
quantum
E)= E-Fp,e
T =2500K
-T=3wK
Tok
ev
hert K BoHzmann Conttan o-
K O2
T temperattre
Characlantic energy
level (
Ef =Fecmi
for Crystal ,e
t a ë oith 0-6 o Fo
eer7Y
level Tpreenti h e
eexni
FlleA 4
flled i4 nno t t ons exikt
prrbasilt i neing
g tuwo ociblk londi
f r k b iertent
eent
50
50 dden band er
e rnkdi
i ohen T d k , teem be come
ponential
he
rac
dltibtion function LE) E >EF, and fCE) = O
seThe femi eener74 £ (nfni e
stae aN ocapied
obabiluy
hat a
no pobabikty of inding
the hereid at
qiver realer han Ep
FF
energY
Occulea quantum
tale
vale
={ for any
eRo
CE) abrolue
hen
and
EE
5Ep The ponentnl beameseeo
t e m p e r at u r
(2 leve slth
energiel lee
eoeeit
quantum)
All at
a t T=o'L
TeoL
tC)-.
ill be Ocpica
than Ee
 ok
hich have
PThere ae n at Feami level
energies eteAs e Ef re fecmi eneAjy band
elu dr on may PNO e A i n Conducion
he narinMUM ener that a -()
abseluli zeo. : Ne er(-(Ec -£p)JET)
ocse at
sta densily
cHetive
Ne
at
*7:o'k
xlo c*fori
=
2 8
T 25T0K
in aseM
tree
The Con centration a n d it
is
i
Thetial
byp TheiaL
hyp
dimiution fn melalli tungsten at 0 ad Ne ives
abaeluti emp T
Condu clr
Enerqy at
placed at the bottom
Stai multipcation
den iy enery E a
Conduction
band
pauli rcluti'on pinciple unCion FCE)
*Beca e at o'K(Ao ofth ferm
even
have he Aame Chergiee Con entration
eK VB
hole in
ot lewe *
only P aN e-EF-)T-(
C I - f C E J / 9 v e s
w d e n The oith
sphe area
cati
Two areps
when muHpli Semi Conoductor
Conduct
afeni
ParHcles be eleciall
Con Centretions
m u
disibuto0) hole Cystal
that h e
P UMP 1feren u Since The
elecom Stct op
h tenperature tntrinticC. placedt
oly Vey ightly >hypsthek aten
for
funetion Change
Ny
vey ne.
Cwve change netal nul. uoh IFL°W Zi
Cven ouf# arge (2520)
i
will b ner bond lee Ey a
atok
e K B h towea enerqies wfu have
h len. My plep-
and wth ighes =
unditurbed
becaune otemp Neef-CEe-Ee)}KT]
much more ghe bgies boh sidey
On
ake lo7
 E a in the mida
N EctEy2p
An Nv ap indian"i eeual on
centratiom
kT enerq
and hola.
t
ree added
Hen e denor tmpuri ty and auwnirg
sthe tempenature
given No
a fírkt
en) at fonised ,
fonisea,
he
Coy+al more
atems
re
e n e
7t
Maes ahok ad a he all
dene7
C B a r e led d
b rg eete
idg
he
heclave
VB t
t in The fm VB t
fom
Ne Nu ek
Same ultI
H t a t i o

ep
(e pu
ull
tu im
io en
)) .
dii agita Thermalyt q e n e r m t z a frhat
forthat
4hemal 9enermtd
alia .
b ermaly
i aa meay
measyre
Nc Ny , i - h o e

pair
S
n Ie
n te
e te
Ee
e
even rneer
r tt
t
At 7-oK a
eauted
allowed
nfn h e
e cCo l
Con eduted
f
alowed
mile clo
cla
i
io be
The feRmi lewel oflL
oo
o Cupan
Cupany
mul
ence
e nce Jem
emp
probabtl& j
energy and prpbab
t i l zi
t7s c l e a s t h a t
h e forbidden q 7 e
hat ma
may d
d o
o nno
(E Stala by
Semi Condutloi
i n d i c a t z
nertinaic 6 r
frlled
d
level in C B CB a r
a r e
e
Fexmi Tha
band vB
n M
erat
Staa
holes
fee
and
a n d
-Peef-1
CB Lrome hon
level
high e
F _-/
eent
making
makin?
mailed b . a large naly
do
enal A o
form eual
-hole
(alrs a nt
alm ost
a
aNnd
d
1n
1n VB r t r ni f c
î t i ni c
neuo
heles
and
7
be Come
b e a m
in CB d u c l s
enery
e n e r 7
Cen
VB lei Cen
he
The tshe
Ev VB m o Ves
O 0.5
6-5
P o s i H nf Vn-17fe
 in n-tapee
PartHon e4 fermi level
To Callat
Loe hawe n= Ne epCe-FE)ET

S u s stihue N Np n-tyre

No- Ne ep[- te-Ep)]

Ec kT ANe
e ND

Stmila for -T
Ep Ev + kT Lo
NA

2
n Nc
Ny

The Continuiy e8uatfon

P we diltuAb The eeutlibiun Cone

tn alemi Conduto h e Cen Cen

oon
n Caiet
hol oilt
vartith tîme
Contenratfon 1n Thee Lo
body
he camie

asemi Conductor aJun ttfon 9 b o t h ' time

and diHtance.

w e TUderive The diterestial eguat.

altarn hi larons htp.
 UNIT-2
uhe ueallted
C4IAKAcTERISTI cS fon n he@he1ghborhoo4 dsn ctin
JUNCTTOnN Dro DE 1 C Covered fince. the gim
CharqA
ated dep le zd rmobik cha it
CHon -charge
rcuiled PN Junetio) fun region ,Space
Open- the depes
alled
ae intoduced nto one Sade TR rasit regi
d o n o r îputies c
oher de a ingk n
into the JuncHo f«rned. hickneM
and Cceptors
O r d e K

a a p-n top he pro Ce

nducle e iom
aem The mmobik r e l d . Crepultim
(rght),
->
ion becane
denor (let) u n Ctio O5on
Ton> ditum
ACcepl
aric tlegt and
There are There
Becae
ght holes
Carier ts the heles
he junchoo eeeg
Only n-yre alrecc
isadnsi qadient YPe d e p l e t i o n regim
nght
tThe
toft Aiffune PYP charge cdensif
A s h e le4E Chael an
Due t displacemest
Ceuiliki an
aChe
aCE u nC hin
ch'n e l e c i e feld intensi
ju
iUa appeard 4ield beComej
elecae hen
hey
h e
t he field
e s t m b l i c h e d diffus
be e
The
f
t r a i n p ce
to7l to neighboTh ood al
eneugh Statie Ppt
bamier
to The
Confined elecFo
arqe Che (mpeb for holes
The elece chargu
+mmoile iom,
Chd Concf&
junckon
and ho les to hithb
A t he unctim VE
-Sed pstde
Ahally, makn
o veoT
enertd eA
neombinato"1 n t i a l a b a r e r

for
whdergo Caosiesd he
difuing CaAsiea,
Oe Pote
mobile Charq mcide
reCom
bíne making ust
unctio r e om D S t N C e - f r o mj n c t i m .
Chd ho les En-
neutraliing EA
 a potential
The dep k tion nr gion Hes
hoet and eO4
barrie for dithuton lows du thermal qenerratm et
cunder
Curran
Cwreot open ckted flot
To have Aiuulom cunenthoulad be ho pairs (Lo) and/minoi aniey
re
0reitance
arge and back
Condittons
oith T
cumnt
cument
d ift
drift CCN maginay7) barne
Lo T
balanced b otential barreu a
Coun due w otetial ts diode
clecicfeld due applied
diHaaim potential This ewhen VVotage bamey hegh
Caued potenti a l - ener7y
Cen Act GLCulate Vo The
Casled l e d to in ia:
be Chown
tes i l
Con Cep a a Camien flo
Íunction i increaiea bt
n a -h majoniY
Biased Pn JuhCtion heveie
bias, a i e
aiA flo
In
and mi'norn
mîn ort y vo în
Itaqe tn
91ettNEd oltage
Diod u applicd called
Called
none applisatiam
CutTent The
The in #? i
ContnuU
i n d i c a l A
+ perni" th bu f tn
i e
ile
Tn oppo
opfo dtrechion
Diode The
T he flos
o
cetatik the ( blockng' b i a s
but
r e crion reverte
dirnchon.
neai bhaac Jorward bias
diode ha
Reverce Bias P-n P
ts P-ide A h ideal
- Ve teminal
nide e Haqe dDp
chic
t e R m i n a l
tb Cryta
L
fve
and bodu f
ceM
holes fn ptype a
CaLses Due s fooar
Thi
t fotental
aoay
în n-Ypef o o Juncho). height
and e s he J u nc t i o o n
as
move bante a t The
The-Ve Charte denti ttage'
p i e d o r o a r d
cnd we to
o
moVe to
by rom PHPe, t
prey dunchi
crod
JuncHon.
Thi
L fa hole drecti) s
r e c h ) Thee
left o Tn deinite holes ant epmvioled oporie
nd O4 an raVel are uNd he
an iououi flb n-tyre Curent oill 4low
ajorily uTier
for Con larpe
and
circurt
Clored
Ohmic enta c zero tn pracHaly "2 o7t
at x end o bari e ofl! ho be ontac and
me tal ontac atohnic
ÄItna
erteinnl bias cet
to by ystrl
Aiode to onnech T lim ited e oCrystrl
F
meistan
are non-Yeciying
balk h o t aPpeas
metal Conact will
aurert Sinhe
Thee V
entin
applied
and iupecke dirzction H e n t e P-n junitim
aNA in
OhMic Coitach
at entire
Ve ltage dm app Chanpe
cgigible n J u nctim
e Ckted
Cryrtal
buk 1 ChaNge an open
V 1tage ppear P-nsunch
bamier ar
band hucur
applied
testial Space -N
C h a r
heigh egion
junctim
P-n Sunctiom
-P-
open-cted ptn
and CB
cKted
Short wil[
potental Eo CB
bame
The Cun Vo tges
hert ckted Ch Sinte
open Vo mu /
be Aame be zexo,
hould
Ena cleted Sem
ompenatid
by melal o
eracy ohmic Conta Evn
p o t e n t i a l a t
o n n e c t a w t t m e l a r
Conductor Con lact
onnect
yB VB
b e meaured
we and
even
fo
ko Vo by pla ing p o n
orres C i l a c t
AP-Djunction
iefprmed
in
n tt
iim
mae
matenalA
în
Hage
forioard vo i4 type Mutt
are level
volte V atomic cale
prward feemi
h n
arge grving he at
irtapreas i t u a i n
bame

dissapreas c'ment
kooula Uhder this pe
appfedthe
oF hrughout
Ho exteeding Pag
C u T e n t B ctnt
be Con
large C u i l i b r i u m
dicde
 ide } Junc Eien telín relaUIvy
9f it t not So On One
on he
h a n hoe
hare a au2 chrgy higher
there otld be masfer of Ve£d )
Other d e And
wo
Cen4Lfexmi
levels and Con ides
e and ener
Constant Put
in O
Fp mut
Sida linc uy
Snce Ep clefes t Ecn in n-pe
Vr b/w
lz
zmmit
i4t
in -side deal f
tnetge g m
r a lidd

t
t
and Clete t junction
eqn
i ta c n u he hole
h o l e
Condu ction band edge be ohen
able
kohere ezuili bri'um
briun
hen the ertendL euii
Same level
t o h e - S d e
ohere
a ohi ch
antbe tame
P-malerin
he
and milary Evn &Evp the
the
4 BP
Eon Con
centratio
denti ty ne
ho le
Where
Evp-Evn=t|tEp
t E -Een =
et
eh e at
he
cher1 C E = v y
rpresent po4entiat
E
gin Vo
Jun Ction
Derivatim fer on h e euälikriun
Eo = K T (
oill be
bated V
alalarion V erD meultan oe Currest
hok
EoKTIn(
z kT L
Cond tror et
no
hole drit currest
Cureot)=
(dittusim
at
and K Oo24 eN
nom teP
Foosev.
btan
Curent omronenti tn a - n diode otal ure
nn urren
en a diode i Tp
biaic4 hole a r n
-forvard ,
and Len hole cure
to hcide np, arest
njectid
to de (unsymme ially
anerd fal of Dpn tLnPdped diods
njected minoiy
The ne of
om junctio hena
itante CurresF
Th diode,The
e x Poneoially t braea
pvportional prard leavy
n a and
Cumt ohch variee
V anes pP a hole CurenE
diusim also
a so enttrsPcide
an aurent
a m e
adien
tentation
nside as
Con
the
dittan t Magnitade Af holey
exit En P ide.
Curer id auren Lome hen reombne
TWO minerity hole
o me of + n f m
inj'etod
n-ide
in The junC înbf
Pn ()
hok u r ProachA in'eTd
P-Aide a unC ohich
are - Ve CLTen
oith e
Inp(a) YP be om
be ome
te part 4
to ardiA
araA
holes
d ho les conttitut¬ to
anan
d hen d e c r e a i y
what
Juntion
2-o, ting
Fnal),
At di
d ir
rnec
c hto
inn euah
hppP
onttun
t2
in fane ' ide
mide
make
Jun (tion(To
C u n
entnd
e n t n d
at jun cthon
= pno) +Inpt) ot p Curen TLpn
fndependlest hemain
Series CKt, itis hole aitutim
Contant in and be Cone &
Pne 1 i
Similaly Lmn
auiu 1s bipolas tin
cumest in
P-ide|Majori,
Curen in P-n
diode
asAie
henc hok Cuent
tv
+ ve
e
a
annd - Ve
Dppa)2-Inp ()y i
made upo b
ut
Propdrtim
+ Constan atan
u
koth
Total
ahd e Vary
hotes
The au Sunctio -
mug hout regio9 1 Co httant
iom hole Cone
variey LorTh diStan
at he
edqu fdeple &hole Conc
ons matejaly The
hole Concenzti
T n p 'and 'n' = ro h e e fge
nd f acc
hs as pes g
negion
CUe
pential Tn to t i de ,
respech vely and
baiu
ayer 11=oj fn =Phl
adepletion
i Ve hen
Vo-/vr)(tom Ctrern
deplenin loq
e

h Co) er(
BotLnann

fp-n relation ship o

exP(Ve/vr)=> Kinelit po
ga oith cgn ®9
heont Comboing
even
wndes Men a u i
ebum Condi tions
Ondition alled
the lau
The abo ve
is Vealia Conpare forward
iP S m a l l boundlar a
Cumest for
the net holedoif ho e Cumen(loo Thit inditate tha atthe

slong PnCo)
orh the difjusion (N junction hote
ConC
heamal equilibriua
bias V>o), the

evel iniection) than

qrealv
P-n jun Cto
Ope-ckted
abole egm t Junctonn
sinila
4oe app VB =Vo
oe Can
a lue no na
the nside

Then
ro n=no Con
cersati o Pn Co)
injecled

Contact potential Jorward biay hole 16

jiunctoo
et he
at
fpo=fne exp Vo/Vr Concentti0 n,fn n Co) Pnlo)-ho.

Y Malerial
Ction
hit fun
Now ohen
forward biated by - 9hjecled charge to)Pro p(V)-Pne
'
V/Then
a
vo Hage
Opplying eg(/)-
the barrie

fr 7
VotegeNg

h ) =
Pre
t d e ceanedValu V
eRuiltium Value
distan a

VE=V- Jun cti on

 -n Dlode curnent ')
Quartati ve hey he This en vetfe
hpIC
Cunen J aro
dpendente Ipn uponupn appea
depletin-layer apgle4
Axtume wnd foroard bias ,

he drstane The
heles A are
7nfected f btalnodimpltcttly 1n th-fa
hickne4 0. Voltage i
The Concentaton fm eone he gnjeclad iea onc
Malesial increated abore
above iid
-ide it n iincreaued Ph (o) hl)
d e
we uill nd
dependentu
hotes in t h e
lerln mno
and
ard 7
& i re
7re A n O Ig
thermal-eRuiibiun

pn'v
C h a A a c l i r i L H i G L

t no) ep(-YP)
0
n C)=fno
TnnMalerl Rd The w a r d Cuwrrs
holes
dittusion
lengh r o t nF0
dunctio
ins
Concentttey he
creing
Tnje ctd ( exceR, pn )
the he hole Cusen
in n
i nq
q
o
Tgiven
sidee

/)-
fno
n Co)-
e Obtin fon
Pn ()= nlo)mo. eponential d
deeccre
eaak
t

t
eonestíal Tpn) =
theRe
in a, distano '7inb
unc. nb
distana
Shenn
AS oi h
w th
Craging
dens Pn (7) en nple)
the elecdn
The
The
e ()-
he 'n' Molerial'

Ae Dn
hok
Cu
urru
ett in the
7side
p-sd arlo) =

on
D'Hasi
pn=Aep otal diode enent

Tpn to) t Lnp ()

in
and putfing 2
Deuirating O- ne Dpfn (9 ep (-yL),
erp( ) - 1 / /
 r InesIdependen
here A e
Pr no AcDn " or e Dp and Dn Vany
bT Henc temeratre d
Prmpato nal
S dths , 7 ac qrCatehan r n hen
Do
valid olse place n in
xp (-efvr)
abore is
o =
KT
plac K,Cenrant indopendart

Rererse
Saturmtim
Cunnen and
9t Me above we begledted omieaGereratimn
deai ratim and exuatim4 2 AiS valdd
above MGmbinatiim in spaa -Charge regim
a rerers bian votrge " y ditudm
CauT

valid ewen Ge not fo si Per siy me

a everte bias hoe magnitmde
t he tantitione a eapas~e
ngible Compared
ompared to V Cuwnan which Piren by
is a r
Charye nerotn

T = o ep (Vh))
p-11r Cenn
p NA whone 2 tr Smalu

Tohe +_D
LnNA AMO
ohe
AT° exp L-qolkT=ATp K Contan
or
Eqo maqnttide o negy Jar at
Ao Congont

ezuol &
EGo Tn ey
VGo Voltaqe numesially
 -forward 2/mAy reveye J u
Characleri stics Tndialu that
atareverte

The dashed portion characderttic

C hamctertt
r a 1n-juncion dode
relatcal to vby VoItage Vzhe
I í biasing and nt i
CAitial

I l o leTCV/nyT) - I - Chfbl an abruyt CunenT lowd

flowA aand
tevrse men
Voltage
Voltrge a larqe doon raia)
- e r Ge At oemtemp, V 0:2GV ald t be break
=Vr 2SmV dtode

,mh
So
and faw reala
(fervard biay
hen v i tve

0may
be negle l e d n d a
Co
G
than wnity n
Cunnt 1expnentially i7h
20
to origin he reverte biaedl o loV,v
02
yetage when diode at 255t
The (1N 365)
timA V, La -l Ge CiN2 70)
tgV-2 o r
Sereral
ecti Ve Cutin, H A e l , break-point
and v Conctant
and respP LVF
ii votaqe- a The Cu
urre
rest
Cunnt
o rererseaturaion uarenl Cutin he
eeisu
belbw ohich
the
rom iq
Vo t g e
L-) MA
0 h r e s h o l

hatzd valuus) , Beyond

ma.

mnll -l
rasidy
ridly
vses
Cuwnt

V O6v
je= 0 2 ei =
Vr for
NA and
14
ik MA Si
inc
Io in Ge
rite id a empar
Cunest
MA S,he
2for

Vz Lorth =
e
ekial
ideal P diode V- pr Pra
(ey VIfor
Ge dliode , breakderwn
Vz
lo gasthmi c Chasacleeisti ci , in 500
50
V>>Vr neqlecting (niy
we haVe
Ioe V/ar)-) -55
Io + O4 34 (/hVr) o
150
Log I =
log
V plot shou oo
hwe hernfre
ekpect The log2Vs
a three temp 4
dip temp
be un cas
At large Cuen
Cxponéptia gV-L
C h a r a c o i s t i c

Shaded Heqion îndiala

25

ek 2 vea tical l a l

V , L o f l l not A Ohmic
a st diode
Contol onductane
hen
The reason

Cuneni imit t i 5o0

mg
o loq and
Csnt

HItane diode
hmic dop is hgigibk
At lo Ccshen characlertict
EN
Vo ltage impy Temperalure depenclepce P -
nd he exteenally împreme
baie a t P-n juncM
Deircase t t tial
ve ttaq
I -Do lexr(v/nyr)-1) temperzture
at
exteannlly applhed arat0y
wth
2 he See Vot t r e there Tn
At high to overo ne he we oi yo
tmpliüty
c leclte
clecdte fiela fired Cuvent temp C aleady
an
estabiches
te
emi Conduclos t á
he Ohnic e
r ts
e sstt
a an
s te
VT and Lo.
fhe diode ack ike a etist T k iven by
high Cusunts Lo on
Cuanent Tineas ineaay Dependence

diode and
ho t y/
V lo KT" (VGo/yr) -
-han
than ofh
ponertialy is torbiddenapenerg
han
ex
here
s Congunt, e Vgp
in jouks
m2 Vgo0 7 E 5 y
mel
VGo=2/V
2
 7aking deimkir lg oy cgnO
dotuds apr for vu 1o C +ntenp-"
tantI
on
1lo e*r (v/vr)-, tor
'negle cing uni)
Taking derivat re °g enO
T
tnm )
An To nKT exp (-Vs/yvVr) 21 m r Gqee
-2:3mV/e dor si
LnI K m An 7 Vee
-2:5mv/

Ln e) K mAnT - Goe
KTJ on is bCez of
Kith N Hrst exmin
dJ cupendi ng
dapendi on
ng on T'but
T'su
KT m T
andl secmd
lo
o

T depending
Vt be o m e len neguhve
Ao a4
on V:
mor hes befit ve
a VGo tmnVr
and on
Than
and
2eno
a t a l elevel Agher Than
h+ghea
t a y plac
a vel

dTedline + The revns

Maa t d
al

Curnen
dT
15o
At room tem h te)o o&"/°c for Re verIod
dr Cnentlod

5
(ooC

MA
25e
0-o)
From expeaimen deb/ aprmx7/c f si - 56 O0oS
05
Sinc (02-0 ve anclude hal
hat 0-oo 30 rergre2
Ters, ,V
veltage

qe
 be (aule
T l ne be on.tant verse vo tnge
oleakag CunAen n he aies JenEiation dls u n t lf and may Teerse Cuert p at a len

Ctni em an t n gion at Jumchio elerCe yolHaqe

noT Te han Si VF=0:gV a f lo mA =)R
Te C'Iu a
R oV=) Ro =5CoM
prode Reriance f e r low aent kigh
14 R
t Y AL Tetiltana t /)
sesi t a n t e unde rrward 2) Dynamit in vemenlal
(n
An ideal dtode r eo and

Rut or pracfial Lignal,poaion i imf

Ind ingmi uhde severTe bias. for mal chaaacloistic
eipal
1e sitances /-L
hern ane d.Flote
defined4
) tatic (m DC rmsistan
2Dynamie ( Ac
nd
onstant

not a
r e i s t a n u
i4
Sratic( The dnamic vo 1tage
dapendi on perahng
ie eRual o
ChatacleiHiC Cumve R
V- e hale

Ar any poi
om
Joining the
the D Iolep (Vhr)-
The ope 4 alne
Teoal dynamic onductana 9=
he oigin.
aigin,
potnE s -

CresaHng
ope 7
R
Potn

&-poinF
(& uikan
S t a i c e H a nce Vasiey
S1nce The

ard , rt+ Charmczr br),

widey
oith V
9t
nt
docunt
Contide shope
(>tew*nh
oth ao t)
Mehul
arama

4
ineut
diode nPVen o tor rererte
bias 'a'i veay large
Vey ae .

a PoinF ad
ne Suvndi pnpertg rall biaj
SiC he
Stic Techfiatim h e max o n a r d
i
ertremely fora
prvard
vi gvim hand
cpeciHasion
heet
to
arain a gonpaad
abenfonvard
he othe
veRuired n

VotHage Ve I>>lo
 angent hae

e (de eperation)
AV N
Poit poTnt
AL

AV

AV
LEneay d i o d e chasacluitic

AU

Vasit inverty Tth Cuken, At room emp= piece

Alarge Stgnnt appnyimafion

pice wtfe lineas

=| 9tislete leads o
uvnnc26mA chara i i l t i c
oard
For a Uaru24 with2, V<U-ad
and even 2
o h m i c r e t tan Ca opencety
han
anali inal maolel
' taten arton dtode i
C o n s t a n t i n c e n e n i t

Vr
\a' has
-pánty high rexfstam c e

lone he

AVg Ac Tactan V,2 soln

L oin
produce a boad and
larqe t diocde
inpu
nal amcialed om type ot
depends
in ha heruHanCe
rR Bt ta lon
Sing a Shoon avy
alled ag
aled Swing ut
gin i
rgiM diode
Cuskent
devce fur h i Ge
tih he
1 hh detcimined by azhe
t Vr= o 6V
RC rMHon
a íntease
etiond establ'
e I t a bhed
lre
50A

drauon bl NIO upta

fne
nd ninvaue
/ e 1ge. o oin
K6-
=6
ma 6
b*
by level
amruiad
Ge Vr =
o:3 =SV
lolae e E
eictemee leel. E O 6 s V
R
The hzghek VF
dettAmin hav
 ckE tabmblneion
e
Piee ike An e
elemenlh npesly Choe actual AA 0 &-0:7
Cma)o
uf gepregen
he
hav
enimlChac. a dvie AL fo-o
/0m
partCelas
ysrM
in a
operahi rna reain\

o7 V 0-&v
Vr Nay
Prachial diode E ideal
Diode apacitantu
Cr
(to7V diode apacitane
e trangtion
Space Charge tranito)
apactane

V apacitace
fn
nverke
bias
Dusion

mave

majori camíer t

c o e dnA
Simplified ECk theteby
w

a
Spac
ction ,
thickKnen

tae
a w a y p m
jun Hence.
tne
n e l e r c e
ve

av Ov chargy
wi th oith
azpied
mmob7le
at unc charge
H e c t

Charg aye wnoVeRea

a CapactTVe

0.7V h i fncreau
1n
Considered
c i t a n t e

=o7V be i n e r e n e n l a l
Capa
vo lHage may an

we Can defnee
de -
a change
Tdeal eR CK Caed by
m
tage a v
cherge
n
1nrease
iîn
n
da it a change AA/At,
ohere Mto 7
Ceurent
vtage
dV in he m a

V deel dis de dt
A o f r e r u l t

en
a
time

i CTE
cr dependt
meverce vofage
and not onttast