FERD20H100S - 100 V, 20 A Field-Effect Rectifier Diode
FERD20H100S - 100 V, 20 A Field-Effect Rectifier Diode
FERD20H100S - 100 V, 20 A Field-Effect Rectifier Diode
Datasheet
A Features
K K K
DPAK
• Insulated package TO-220FPAB:
A
TO-220FPAB
A
K
– Insulated voltage: 2000 VRMS sine
• ECOPACK2 compliant component
Applications
• Switching diode
• Notebook adapter
• LED lighting
• DC/DC converter
• MPPT
Description
The device is based on a proprietary technology that achieves the best in class VF/IR
trade-off for a given silicon surface.
Product status
This 100 V rectifier has been optimized for use in confined casing applications where
FERD20H100S both efficiency and thermal performance matter.
With a lower dependency of leakage current (IR) and forward voltage (VF) in function
Product summary
of temperature, the thermal runaway risk is reduced. Therefore, it can
Symbol Value advantageously replace 100 V Schottky diodes.
IF(AV) 20 A
VRRM 100 V
VF(max.) 0.415 V
IR(max.) 140 µA
T j(max.) 175 °C
1 Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short
circuited)
TO-220AB,
TC = 155 °C
IF(AV) Average forward current, δ = 0.5 square wave DPAK, IPAK 20 A
TO-220FPAB TC = 110 °C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Tj = 25 °C - 140 µA
VR = VRRM
IR(1) Reverse leakage current Tj = 125 °C - 8 16
mA
Tj = 125 °C VR = 70 V - 4 7
Tj = 25 °C - 0.370 0.415
IF = 2 A
Tj = 125 °C - 0.315 0.365
Tj = 25 °C - 0.455 0.515
IF = 5 A
VF (2) Tj = 125 °C
Forward voltage drop - 0.450 0.510 V
Tj = 25 °C - 0.580 0.655
IF = 10 A
Tj = 125 °C - 0.550 0.605
Figure 1. Average forward current versus ambient Figure 2. Relative variation of thermal impedance junction
temperature (δ = 0.5) to case versus pulse duration
30 Rth(j-a)=Rth(j-c)
0.8
25 TO-220FPAB
TO-220AB 0.7
/ DPAK / IPAK
0.6
20
0.5
15 0.4
0.3
10 Single pulse
T
0.2
5 0.1
δ = tp/T tp t p(s)
Tamb (°C)
0.0
0
0 25 50 75 100 125 150 175 1.E-04 1.E-03 1.E-02 1.E-01
Figure 3. Relative variation of thermal impedance junction Figure 4. Reverse leakage current versus reverse voltage
to case versus pulse duration applied (typical values)
Zth(j-c)/Rth(j-c) IR(mA)
1.0 1.E+02
TO-220FPAB
0.9
Tj = 150 °C
0.8 1.E+01
Tj = 125 °C
0.7
Tj = 100 °C
0.6 1.E+00
Tj = 75 °C
0.5
Tj = 50 °C
0.4 1.E-01
0.2 1.E-02
0.1 VR(V)
t p (s)
0.0 1.E-03
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 10 20 30 40 50 60 70 80 90 100
Figure 5. Junction capacitance versus reverse voltage Figure 6. Forward voltage drop versus forward current
applied (typical values) (typical values)
C(pF) IF(A)
10000 100.0
F = 1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
10.0
1000 Tj = 75 °C
Tj = 125 °C Tj = 25 °C
1.0
VR(V) VF(V)
100 0.1
1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Figure 7. Forward voltage drop versus forward current Figure 8. Thermal resistance junction to ambient versus
(typical values) copper surface under tab (typical values)
Rth(j-a) (°C/W)
100
IF(A) DPAK
20 90
80
Tj = 75 °C
70
15 Tj = 125 °C
Tj = 25 °C
60
50
10
40
30
5 Epoxy printed board FR4, eCu= 35 µm
20
10
VF(V) SCu (cm²)
0 0
0 5 10 15 20 25 30 35 40
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
E A
b4 c2
V1
L2
L1
H
A1
b2
e L
B5 b
c
e1
Dimensions
Note: This package drawing may slightly differ from the physical package. However, all the specified dimensions are
guaranteed.
Dimensions
Dimensions
Dimensions
3 Ordering information
Revision history