iNVERTER aSSIGN6 1

Take (for 0.25 micron technology, assume long channel MOSFET equations are valid) VDD=2.
5V, neglect and unless specified. NMOS ---VTN= 0.43V = 0.4 V K=NCOX=115 A/V2 =0.06 PMOS---- VTP= -0.4V = 0.4 V K= PCOX =30 A/V2 =0.1 Q Figure below shows NMOS and PMOS devices with drains, source, and gate ports annotated. Determine the mode of operation (saturation, linear, or cutoff) and drain current ID for each of the biasing configurations given below. Verify with SPICE. Use the following transistor data: NMOS: k'n = 115A/V2, VT0 = 0.43 V, = 0.06 V1, PMOS: k'p = 30 A/V2, VT0 = 0.4 V, = -0.1 V1. Assume (W/L) = 1. a. NMOS: VGS = 2.5 V, VDS = 2.5 V. PMOS: VGS = 0.5 V, VDS = 1.25 V. b. NMOS: VGS = 3.3 V, VDS = 2.2 V. PMOS: VGS = 2.5 V, VDS = 1.8 V. c. NMOS: VGS = 0.6 V, VDS = 0.1 V. PMOS: VGS = 2.5 V, VDS = 0.7 V.
Q. An NMOS device is plugged into the test configuration shown below in Figure . The input Vin =2V. The current source draws a constant current of 50 A. R is a variable resistor that can assume values between 10k and 30 k. Transistor M1 experiences short channel effects and has following transistor parameters: k = 110*10-6 V/A2, VT = 0.4 , and VDSAT = 0.6V. The transistor has a W/L = 2.5/0.25. For simplicity body effect and channel length modulation can be neglected. i.e =0, =0. .
a. When R =10k find the operation region, VD and VS. b. When R= 30k again determine the operation region VD, VS c. For the case of R = 10k, would VS increase or decrease if 0. Explain qualitatively
Q. Consider the circuit configuration of Figure below a. Write down the equations (and only those) which are needed to determine the voltage at node X. Do NOT plug in any values yet. Neglect short channel effects and assume that p = 0. b. Draw the (approximative) load lines for both MOS transistor and resistor. Mark some of the significant points. c. Determine the required width of the transistor (for L = 0.25m) such that X equals 1.5 V. d. We have, so far, assumed that M1 is a long-channel device. Redraw the load lines assuming
that M1 is velocity-saturated. Will the voltage at X rise or fall?
Q. consider the MOS circuit of Figure given below a. Plot Vout vs. Vin with Vin varying from 0 to 2.5 volts (use steps of 0.5V). VDD = 2.5 V. b. Repeat a using SPICE. c. Repeat a and b using a MOS transistor with (W / L) = 4 / 1. Is the discrepancy between manual and computer analysis larger or smaller. Explain why.
Q Consider the low swing driver of Fig.
Fig. What is the voltage swing on the output node (Vout)? Assume =0. Q For the Fig. 1 ,the inverter below operates with VDD=2.5V and is composed of |Vt| = 0.5V devices. Transistors are identical in size.
Fig.1
a)
Calculate the switching threshold (VM) of this inverter.
Q Below ( Fig 1)is the DC response for 4 different CMOS Inverters. Wn is the same for each inverter, but WP is changed from 2um to 8um.
Fig 1
a) Identify which curve is for WP=2um and which is for 8um. b) Identify which curve has the most equal noise margins. c) Identify which curve is best to use if the ground signal is noisy. Explain all your answers for full credit. 2+2+2 Q a) Using process parameters given at the top , design aspect ratio kR of the fig 2 CMOS circuit for Vout=Vin =3 Volts .
Fig 2
What is the Drain Current flowing through the PMOS Transistor?
Q For CMOS inverter with following parameters--Vt0n = 0.8V VDD = 3V Vt0p = -0.8V =0 nCox = 60A/V2 pCox = 20A/V2
[n Cox (W/L)N P Cox (W/L)P ] = 1
Lmin= 0.8m (for pmos and nmos) a) Determine Vth, VIL, VIH, (W/L)N, and (W/L)P . Given Wmin = 0.8m Sketch and label the VTC.
b)
Discuss how the noise margins change if 0 Q

Velocity saturation: (a) Re-derive the MOS IV relationships on pages 19{Hint -- of the MOS Transistor lecture notes assuming that the device is in velocity saturation. (b) Given a standard I-V plot of a MOSFET (ID on the y-axis, VDS on the x-axis, and a family of curves for dierent values of VGS), describe two ways of determining graphically if the device has short-channel velocity saturation eects.
Q
A short-channel NMOS transistor has VDSAT = 0.6 V and k0 = 100 A/V2. In addition, the following data points were measured in the lab with VBS = 0:
(a) Determine VT0. (b) Determine (c) Determine W=L. (d) What additional data would you need to collect in order to determine the body effect parameter, . Describe in detail what measurements you would make under what biasing conditions, and what equation(s) you would solve to get the result. (You don't need to actually solve the equations for this exercise.)
Q
Given the I-V characteristics of the NMOS device shown below, determine VT0, , and . Assume that W=L = 1, -(2 F) = 0.6 V, and that velocity saturation does not play a role.
Q Consider the inverter circuit in Figure below, where the dimensions for the nMOS driver transistor are Ln, Lp >= 1m and Wn, Wp >= 5m by design rules. The critical process parameters are given in Table
(a) Derive the expression for VOH.
(b) Derive the relationship between kp/kn and VOL.

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Take (for 0.25 micron technology, assume long channel MOSFET equations are valid) VDD=2.

that M1 is velocity-saturated. Will the voltage at X rise or fall?

Q Consider the low swing driver of Fig.

Calculate the switching threshold (VM) of this inverter.

What is the Drain Current flowing through the PMOS Transistor?

[n Cox (W/L)N P Cox (W/L)P ] = 1

Discuss how the noise margins change if 0 Q

(a) Derive the expression for VOH.

(b) Derive the relationship between kp/kn and VOL.

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