To our customers,

Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.
 Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
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characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G1139-0400
Rev.4.00
Jul 13, 2007

Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) )
4
4
1. Gate
2. Drain
3. Source
4. Drain
1
2
1 3
2
3
D

G Gate Resistor

Tempe- Latch Gate

rature Circuit Shut-
Sensing down
Circuit Circuit

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 1 of 9
HAF2012(L), HAF2012(S)

Absolute Maximum Ratings

(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS 16 V
VGSS –2.8 V
Drain current ID 20 A
Drain peak current ID (pulse) Note 1 40 A
Body-drain diode reverse drain current IDR 20 A
Channel dissipation Pch Note 2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Ta = 25°C

Typical Operation Characteristics

(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Input voltage VIH 3.5 — — V
VIL — — 1.2 V
Input current IIH1 — — 100 µA Vi = 8 V, VDS = 0
(Gate non shut down) IIH2 — — 50 µA Vi = 3.5 V, VDS = 0
IIL — — 1 µA Vi = 1.2 V, VDS = 0
Input current IIH (sd) 1 — 0.8 — mA Vi = 8 V, VDS = 0
(Gate shut down) IIH (sd) 2 — 0.35 — mA Vi = 3.5 V, VDS = 0
Shut down temperature Tsd — 175 — °C Channel temperature
Gate operation voltage VOP 3.5 — 13 V

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 2 of 9
HAF2012(L), HAF2012(S)

Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain current ID1 10 — — A VGS = 3.5 V, VDS = 2 V
ID2 — — 10 mA VGS = 1.2 V, VDS = 2 V
Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS 16 — — V IG = 100 µA, VDS = 0
V (BR) GSS –2.8 — — V IG = –100 µA, VDS = 0
Gate to source leak current IGSS1 — — 100 µA VGS = 8 V, VDS = 0
IGSS2 — — 50 µA VGS = 3.5 V, VDS = 0
IGSS3 — — 1 µA VGS = 1.2 V, VDS = 0
IGSS4 — — –100 µA VGS = –2.4 V, VDS = 0
Input current (shut down) IGS (op) 1 — 0.8 — mA VGS = 8 V, VDS = 0
IGS (op) 2 — 0.35 — mA VGS = 3.5 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 50 V, VGS = 0
Gate to source cutoff voltage VGS (off) 1.0 — 2.25 V ID = 1 mA, VDS = 10 V
Static drain to source on state resistance RDS (on) — 50 65 mΩ ID = 10 A, VGS = 4 V Note 3
RDS (on) — 30 43 mΩ ID = 10 A, VGS = 10 V Note 3
Forward transfer admittance |yfs| 6 12 — S ID = 10 A, VDS = 10 V Note 3
Output capacitance Coss — 630 — pF VDS = 10 V, VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 7.5 — µs ID = 5 A
Rise time tr — 29 — µs VGS = 5 V
Turn-off delay time td (off) — 34 — µs RL = 6 Ω
Fall time tf — 26 — µs
Body-drain diode forward voltage VDF — 1.0 — V IF = 20 A, VGS = 0
Body-drain diode reverse recovery time trr — 110 — ns IF = 20 A, VGS = 0
diF/dt = 50 A/µs
Over load shut down operation time Note4 tos1 — 1.8 — ms VGS = 5 V, VDD = 12 V
tos2 — 0.7 — ms VGS = 5 V, VDD = 24 V
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 3 of 9
HAF2012(L), HAF2012(S)

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

80 500
Thermal shut down
Pch (W)

200 Operation area

20 µs

ID (A)
100
60
50 10
0
µs
Channel Dissipation

20 1

Drain Current
40 DC PW m
10 Op s
=
5 er 10
at m
ion s
(T
20 2 Operation in this area c=
is limited by RDS (on) 25
1 °C
)
0.5 Ta = 25°C
0 0.3
0 50 100 150 200 0.3 0.5 1 2 5 10 20 50 100

Case Temperature Tc (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

50 50
10 V Pulse Test VDS = 10 V
8V Pulse Test
40
ID (A)

ID (A)

40 6V
5V
Tc = –25°C
30 30
4V 25°C
Drain Current

Drain Current

75°C
20 3.5 V 20

VGS = 3 V
10 10

0 0
0 2 4 6 8 10 0 1 2 3 4 5

Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
VDS (on) (V)

2.0
RDS (on) (Ω)

0.5
Drain to Source on State Resistance

Pulse Test Pulse Test

1.6
0.2
Drain to Source Voltage

1.2 0.1
VGS = 4 V
0.8 ID = 20 A 0.05

0.4 10 A 10 V
0.02
5A
0 0.01
0 2 4 6 8 10 1 2 5 10 20 50 100 200

Gate to Source Voltage VGS (V) Drain Current ID (A)

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 4 of 9
HAF2012(L), HAF2012(S)

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current

RDS (on) (Ω)

Static Drain to Source on State Resistance

Forward Transfer Admittance |yfs| (S)

0.10 100
Pulse Test VDS = 10 V
Pulse Test
50
0.08 ID = 20 A

VGS = 4 V 20
0.06 10 A Tc = –25°C
5A
10
25°C
0.04
ID = 20 A 5
75°C
5 A, 10 A
0.02 10 V 2

0 1
–40 0 40 80 120 160 0.5 1 2 5 10 20 50

Case Temperature Tc (°C) Drain Current ID (A)

Body-Drain Diode Reverse

Recovery Time Switching Characteristics
1000 100
Reverse Recovery Time trr (ns)

td(off)
500 Switching Time t (µs) 50
tf

200 20
tr
100 10 td(on)

50 5

20 di / dt = 50 A / µs 2
VGS = 5 V, VDD = 30 V
VGS = 0, Ta = 25°C PW = 300 µs, duty ≤ 1 %
10 1
0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50

Reverse Drain Current IDR (A) Drain Current ID (A)

Reverse Drain Current vs. Typical Capacitance vs.

Source to Drain Voltage Drain to Source Voltage
50 10000
Pulse Test
Reverse Drain Current IDR (A)

40 3000
Capacitance C (pF)

1000
30 Coss
VGS = 5 V
300
20 0V
100

10
30
VGS = 0
f = 1 MHz
0 10
0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50

Source to Drain Voltage VSD (V) Drain to Source Voltage VDS (V)

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 5 of 9
HAF2012(L), HAF2012(S)

Gate to Source Voltage vs. Shutdown Case Temperature vs.

Shutdown Time of Load-Short Test Gate to Source Voltage

Shutdown Case Temperature Tc (°C)

10 200
VGS (V)
VDD = 36 V ID = 5 A
8 180
24 V
Gate to Source Voltage

12 V
6 160
9V

4 140

2 120

0 100
0.1 0.2 0.5 1 2 5 10 20 50 100 0 2 4 6 8 10
Shutdown Time of Load-Short Test PW (ms) Gate to Source Voltage VGS (V)

TTL Drive Characteristics

10 1.0
ID = 5 A

Input Current II (mA)

8 0.8
Input Voltage VI (V)

6 0.6

VI
4 0.4

II
2 0.2

0 0
0.01 0.03 0.1 0.3 1 3 10
Gate Series Resistance RG (kΩ)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γ s (t)

Tc = 25°C
1
D=1

0.5
0.3

0.2

0.1 0.1 θch – c (t) = γ s (t) • θch – c

θch – c = 2.50°C/W, Tc = 25°C
0.05 PW
PDM D=
.02
T
0.03 0
1 e
0.0 p uls PW
h ot T
1s
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (S)

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 6 of 9
HAF2012(L), HAF2012(S)

Test Circuit

RL
ID 5A

0
II D.U.T
+ VI
– Rg 0
VCC HD74LS08
=5V VI II
0

Thermal shut down

Switching Time Test Circuit Waveform

90%
Vin Monitor Vout
Monitor
D.U.T. Vin 10%
RL
Vout 10% 10%

Vin VDD
50 Ω = 30 V 90%
5V 90%

td(on) tr td(off) tf

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 7 of 9
HAF2012(L), HAF2012(S)

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
LDPAK(L)  PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g Unit: mm

4.44 ± 0.2

(1.4)
10.2 ± 0.3 1.3 ± 0.15

0.3
11.3 ± 0.5
10.0 +– 0.5
8.6 ± 0.3 1.3 ± 0.2
1.37 ± 0.2

2.49 ± 0.2
0.86 +– 0.1
0.2

11.0 ± 0.5
0.76 ± 0.1

2.54 ± 0.5 2.54 ± 0.5 0.4 ± 0.1

Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
Unit: mm
LDPAK(S)-(1) SC-83 PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 1.30g

4.44 ± 0.2 7.8

(1.4)

10.2 ± 0.3 1.3 ± 0.15 6.6

1.7
+ 0.3
– 0.5
8.6 ± 0.3

7.0
7.8

2.49 ± 0.2
10.0

(1.5)
(1.5)

0.1 +– 0.1
0.2
2.2
1.37 ± 0.2
1.3 ± 0.2 0.4 ± 0.1
0.86 +– 0.1
0.2
0.3
3.0 +– 0.5

2.54 ± 0.5 2.54 ± 0.5

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 8 of 9
HAF2012(L), HAF2012(S)

Ordering Information
Part Name Quantity Shipping Container
HAF2012-90L Max: 50 pcs/sack Sack
HAF2012-90S Max: 50 pcs/sack Sack
HAF2012-90STL 1000 pcs/Reel Embossed tape
HAF2012-90STR 1000 pcs/Reel Embossed tape

REJ03G1139-0400 Rev.4.00 Jul 13, 2007

Page 9 of 9
 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
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or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.

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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.

Colophon .7.0