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BUL6802

This document provides the product specification for an NPN silicon power transistor (BUL6802) made by SI Semiconductors Co., Ltd. It includes maximum ratings, electrical characteristics, safe operating area curves, current gain curves, saturation voltage curves, and mechanical data for the TO-126 package. The transistor has features of high voltage capability, high switching speed, and a wide safe operating area. Its intended applications are for electronic ballasts for fluorescent lighting and compact fluorescent lamps.

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Yuleicy Hernadez
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124 views3 pages

BUL6802

This document provides the product specification for an NPN silicon power transistor (BUL6802) made by SI Semiconductors Co., Ltd. It includes maximum ratings, electrical characteristics, safe operating area curves, current gain curves, saturation voltage curves, and mechanical data for the TO-126 package. The transistor has features of high voltage capability, high switching speed, and a wide safe operating area. Its intended applications are for electronic ballasts for fluorescent lighting and compact fluorescent lamps.

Uploaded by

Yuleicy Hernadez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SI SEMICONDUCTORS CO.,LTD.

Product specification

NPN SILICON POWER TRANSISTOR BUL6802

●FEATURES: ■HIGH VOLTAGE CAPABILITY ■HIGH SWITCHING SPEED ■WIDE SOA

● APPLICATIONS: ■ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING


■COMPACT FLUORESCENT LAMP

●MAXIMUM RATINGS（Tc=25°C） TO-126


PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage VCBO 600 V

Collector-Emitter Voltage VCEO 400 V

Emitter-Base Voltage VEBO 9 V

Collector Current IC 1.2 A

Total Power Dissipation PC 25 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg -65-150 °C

●ELECTRICAL CHARACTERISTICS（Tc=25°C）

CHARACTERISTIC SYMBOL TEST CONDITION MIN MAX UNIT

Collector Cutoff Current ICBO VCB=600V 100 μA

Collector Cutoff Current ICEO VCE=400V,IB=0 250 μA


Collector-Emitter
VCEO IC=10mA,IB=0 400 V
Sustaining Voltage
Base-Emitter
VEBO IE=1mA,IC=0 9 V
Sustaining Voltage
IC=0.2A,IB=0.04A 0.5
Collector-Emitter
Vces IC=0.5A,IB=0.1A 1.0 V
Saturation Voltage
IC=1.0A,IB=0.2A 3
Base-Emitter
Vbes IC=0.5A,IB=0.1A 1.2 V
Saturation Voltage
VCE=5V,IC=5mA 8
DC Current Gain hFE VCE=5V,IC=0.2A 10 40
VCE=5V,IC=0.6A 8
Storage Time tS VCC=250V, 3.0
IC=5IB; µS
Fall Time tf IB1=IB2=0.1A 0.8

SI SEMICONDUCTORS CO.,LTD. 2002.07


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BUL6802

SOA(DC) Pc∝Tj
%
Ic(A)
10 120

100
Is/s
1 80

60

Ptot
0.1 40

20

0.01 0
Vce(v) Tj(℃)
1 10 100 1000 0 50 100 150

hFE-Ic hFE-Ic
hFE
hFE
100 100
Tj=125℃ Vce=1.5V Tj=125℃
Vce=5V

Tj=25℃
Tj=25℃
10 10

1 1 Ic(A)
Ic(A) 0.001 0.01 0.1 1 10
0.001 0.01 0.1 1 10

Vcesat-Ic Vbesat-Ic
Vcesat(v) Vbesat(v)
10 1.3
1.2
1.1
Tj=125℃ Tj=25℃
1 1

Tj=25℃ 0.9
Tj=125℃
0.8
0.1 0.7
0.6
hFE=5
0.5 hFE=5

0.01 0.4
Ic(A) Ic(A)
0.1 1 10 0.1 1 10

SI SEMICONDUCTORS CO.,LTD 2002.07


SI SEMICONDUCTORS CO.,LTD. Product specification

TO-126 MECHANICAL DATA


UNIT：mm
SYMBOL min nom max SYMBOL min nom max
A 2.3 2.8 L 15.3 16.5
B 1.0 1.2 L1 2.54
B1 0.8 1.0 φP 3.0 3.2
b 0.65 0.88 φP1 5.0
c 0.45 0.60 Q 3.6 4.4
D 10.5 11.1 Q1 0.9 1.5
E 7.2 7.8 R 0.5*
e 2.29

SI SEMICONDUCTORS CO.,LTD. 2002.07


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