Scribd
Upload
21 views

Department of Electrical Engineering Indian Institute of Technology, Kanpur EE 311 Home Assignment #8 Assigned: 13.3.23 Due: 20.3.23

This document contains 5 homework problems assigned to electrical engineering students at IIT Kanpur. The problems cover topics related to p-n junction diodes including: 1) calculating charge in the p-region as a function of bias voltage, 2) calculating avalanche breakdown voltage and minimum p-region thickness, 3) determining built-in voltage and depletion width from capacitance-voltage data, 4) deriving equations for electric field, depletion width and capacitance for a graded junction, and 5) determining time constant and maximum operating frequency accounting for resistances.

Uploaded by

Manan Kalavadia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
21 views

Department of Electrical Engineering Indian Institute of Technology, Kanpur EE 311 Home Assignment #8 Assigned: 13.3.23 Due: 20.3.23

This document contains 5 homework problems assigned to electrical engineering students at IIT Kanpur. The problems cover topics related to p-n junction diodes including: 1) calculating charge in the p-region as a function of bias voltage, 2) calculating avalanche breakdown voltage and minimum p-region thickness, 3) determining built-in voltage and depletion width from capacitance-voltage data, 4) deriving equations for electric field, depletion width and capacitance for a graded junction, and 5) determining time constant and maximum operating frequency accounting for resistances.

Uploaded by

Manan Kalavadia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Department of Electrical Engineering

Indian Institute of Technology, Kanpur

EE 311 Home Assignment #8 Assigned: 13.3.23 Due: 20.3.23

1. Find the total charge of electrons injected into the p-region of an n+-p Si diode as a function
of the bias voltage VD. Doping density, length, and diffusion length of electrons
corresponding to the p-region are NA, L, and Ln respectively. Consider three cases: i)
arbitrary relation between L and Ln, ii) L > 5Ln, and iii) L < Ln/5. Assume that at the external
contact on the p-side, the electron concentration n = np0, where np0 is the equilibrium
concentration of electrons in the p-region.

2. An abrupt p-n junction in Si has doping densities NA = 1016 cm3 and ND = 1017 cm3.
Assume Écrit(avalanche) = 5  105 V/cm. Calculate the junction avalanche breakdown
voltage. Also, determine the minimum thickness of the neutral p-region required to avoid
punch-through before avalanche. (Punch-through is another form of device breakdown, when
the entire neutral region gets depleted, with a consequent very large current flow).

3. The measured junction capacitance Cj (in F) as a function of the applied voltage VD (in
volts) of an abrupt Si p-n junction (area = 10 mm2) is given by 1/ C 2j = [2.5  105  (4 
6.25VD)]. Determine the built-in voltage and the depletion region width at zero bias. Also,
calculate the dopant concentrations on the two sides of the junction.

4. Assume a linearly graded junction with a doping distribution given by |ND  NA| = Gx, where
G is a grade constant giving the slope of the net impurity distribution. The doping is
symmetrical, so that xn0 = |xp0| = W/2, where W is the total width of the depletion region.
Show that the electric field is given by E(x) = [q/(2)]G[x2  (W/2)2], the width of the
depletion region is W = [12(V0  VD)/(qG)]1/3, and the junction capacitance is Cj =
A[qG2/{12(V0  VD)}]1/3, where VD is the applied voltage and A is the junction area.

5. Consider Ex.4.15 of text. Without neglecting rp and rn, determine the time constant of the
circuit. Hence, determine the maximum frequency of operation for: i) sinusoidal and ii) pulse
excitations, assuming that rp = rn = 100 . Compare the results with those obtained in
Ex.4.15.

You might also like