UNIVERSITI TUNKU ABDUL RAHMAN

Faculty of Engineering and Green Technology

Bachelor of Engineering (HONS) Electronic Engineering

UGEA 1313 Basic Electronics

ASSIGNMENT

Student(s) detail(s):

Name Student ID

Lecturer:

Date of Submission:
Introduction
In this assignment, it has three parts of content which is bridge rectifier, the circuits that
can perform double, triple or quadruple voltage output, BJT (Bipolar Junction
Transistor), and FET (Field Effect Transistor). Bridge rectifier is a kind of full-wave
rectifier that uses four or more diodes in a bridge circuit design to convert alternating
(AC) current to direct (DC) current with adding the capacitor to let its output voltage
more stable as a direct (DC) current and controlling the output voltage by using the zener
diode, or series the load resistor with another resistor. For the double, triple or quadruple
voltage output, it is very useful in those circuits that need a very high output voltage. It
used the diode and the capacitor, and its work with the charge and discharge of the
capacitor.

BJT (Bipolar Junction Transistor) is a type of transistor that uses both electrons and
electron holes as charge carriers. . They have two types of BJT , they are NPN type and
PNP type . 2N3904 is an NPN type . ​A bipolar transistor allows a small current injected
at one of its terminals to control a much larger current flowing between the terminals,
making the device capable of amplification or switching. Nowadays, Bipolar transistors
are still used for amplification of signals, switching, and in digital circuits. Specialized
types are used for high voltage switches, for radio-frequency amplifiers, or for switching
high currents.

The FET (Field Effect Transistor) FETs are unipolar devices because they operate with
only one type of charge carrier. The FET is a voltage controlled device where voltage
between two of the terminals (gate and source) controls the current through the device.
For the 2N3796 it is a MOSFET. A MOSFET is a device that can operate in the
enhancement mode(besides the depletion-mode). This means that the input signal can be
used to increase the effective size of the channel and it is not restricted to operating with
itsgate reverse biased.Depletion region The construction of the MOSFET differs from the
JFET in that it has no pn junctions.Instead, the gate of the MOSFET is insulated from the
channel by a very thin layer of silicon dioxide (SiO2).The gate terminal is made of a
metal conductor. Thus, going from gate to the channel, you have metal-oxide
semiconductor, which is where the term MOSFET comes from.
Assignment Details
In part 1, it has 2 subparts. For the first subpart, it is about the output voltage when we
add on a capacitor in a bridge rectifier, and add on a zener diode in the rectifier, then find
another way that can support the regulated output voltage requirements without using the
zener diode. For the second subpart, it is about designing a single circuit that can perform
the double, triple, and quadruple output voltage.

In part 2, the audio mixer with BJT amplifier circuit, both beta DC and beta AC are equal
100. When two signals(Human voice and Piano sound) are to be combined using a
superposition circuit through Vs into a single audio output circuit. First question, it needs
to use two ways(r-parameter and hybrid π transistor models) to find the voltage gain, Av
for unloaded and loaded condition. Not only that, it also asks for the overall gain from
source to collector. In the second question, it requests to explain the effect of increasing
RL to 5.6k ohms on the loaded voltage gain. Last but not least, the question needs
comment on the effect of increasing Rs to 1k ohms with RL equal to 2.7k ohms.

In part 3, it is about designing an amplifier using a MOSFET and the supply voltage, dc
drain-to-source voltage and voltage gain is given. IDSS and also the gm is given on the
datasheet. We need to design it to make sure that it can work for randomly selected
2N3796 and we need to calculate the resistor used to build the circuit and other
components.

Part 1
a(i)
(iii)

(iv)
b(i)
(ii)
Double :

Triple :
Quadruple :

Part 2
Loaded voltage gain is increasing when RL is increasing to 5.6k ohms .

If Rs is increasing to 1k ohms with RL = 2.7k ohms, it affects overall gain from source
to collector decreasing.

Part 3
Design an amplifier using a 2N3796 that operates from a 20V supply voltage. The typical
dc drain-to-source voltage should be approximately 10V and the typical voltage gain
should be approximately 8. (Tips: Using typical IDSS and gm(forward transfer
admittance) from 2N3796 datasheet. Then modify the amplifier designed to ensure that it
can work for any random selected 2N3796.)
Note: Show your calculation and circuit design. Explain the method used to support any
random selected 2N3796.

This is the datasheet of 2N3796

We use the common source amplifier, there are three sources which are common drain,
common source and common gate. Common drain doesn’t amplify the output so it is
useless, the common gate has low input impedance and will affect the output of the
amplifier.

Discussion
In part 1, subpart a, the bridge rectifier when we connect a capacitor that parallel with the
load resistance, it will charge in the positive cycle and discharge after the peak of voltage
that through after the bridge rectifier, and the output will be filtered by the capacitor.
When we add a zener diode, it can stabilize the output voltage by the zener diode’s
breakdown voltage, or we also can series a resistor as a voltage divider to control the
output voltage that we want. For the subpart b, the circuit works as a voltage multiplier
because of the charge and discharge of capacitor and the capacitor series with the input
voltage and it performs as a voltage source. So the first capacitor voltage is Vp and the
remaining capacitor’s voltage is 2Vp. Thus, when we connect the load resistor at the
place, depending on how much voltage multiplier we want.

For part 2 , question 1 sub question (i) using r-parameter to find the voltage gain, Av for
unloaded and loaded condition. at unloaded condition, R(total) = Rc , Ac =598.89 and at
loaded condition , R(total) = Rc//RL , Ac = 231. Using hybrid π transistor models , find it
the value is similar to using the r - parameter . The values are Ac =592.8 with unloaded
condition and Ac = 228.65 with loaded condition. And we can see from that , r -
parameter and hybrid π transistor models are just two different ways to find out the
voltage gain , Av . In sub question (ii) , using contrast Av and A’v we can get the answer
, A’c = 136.1(r - parameter) and A’c = 134.72 (hybrid π transistor models) . Question 2
,If RL is increasing to 5.6k ohms , ​it can cause the voltage gain to increase, which data
will become Av = 338.76 . Question 3, If Rs is increasing to 1k ohms with RL = 2.7k
ohms, it affects overall gain from source to collector decreasing , which value becomes
A’v = 96.47 .

For part 3, I connected the VDD source to a resistor RD and then it is linked to the
MOSFET to the drain source. After that, a capacitor is connected to the supply voltage so
Coupling capacitors are essential components in amplifier circuits. They are used to
prevent interference of a transistor's bias voltage by AC signals. In most amplifier
circuits, this is achieved by driving the signal to the base terminal of a transistor through
a coupling capacitor. The IDSS is 1.5mA, gm = 1200 x 10uS, VDS = 10V, Av = 8V,
Vgs(off) = 3V. Using the formula we learned, I have calculated the value for gmo is 1mS,
Vgs is -0.6V, ID is 2.16mA, RD is 6.67k ohm and lastly VDD is 24.4V.

Conclusion
For the bridge rectifier, when we parallel a capacitor and a zener diode, its output voltage
will very similar to direct current (DC), and if we remove the zener diode and series a
variable resistor, its output will also very similar to direct current (DC), and we can
control the variable resistor to control the output voltage value that we want. For the
single circuits that can perform double, triple, and quadruple output voltage, we can
connect the circuit of part 1b(i), and connect the load resistor at the place depending on
the output voltage value that we want.

In conclusion , in the BJT amplifier circuit ,we solve this kind of circuit in some steps.
Step 1, Determine the dc bias values, For this, we need a dc equivalent circuit for the
amplifier to find out IE and IC
Step 2, The ac analysis is based on the ac equivalent circuit shown next,

The first thing to do in an ac analysis is calculate r’e . Next find R(total) with unloaded
condition or loaded condition. Then , find the voltage gain. Last but not least, find overall
voltage gain. Lastly , changing each of the resistors , it affects the values of the voltage
gain and overall voltage gain.

For the amplifier circuit, the circuit is designed and it is a common source amplifier
because there are three sources which are common drain, common source and common
gate. Common drain doesn’t amplify the output so it is useless, the common gate has low
input impedance and will affect the output of the amplifier.