This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor. The transistor has a maximum static drain-source on-resistance of 0.36 ohms and is enhancement mode. It is rated for a maximum drain-source voltage of 600V, drain current of 9A continuous and 26A single pulsed, and total power dissipation of 41W. Key thermal characteristics include a maximum junction-to-case thermal resistance of 3.04°C/W and junction-to-ambient thermal resistance of 62°C/W.
This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor. The transistor has a maximum static drain-source on-resistance of 0.36 ohms and is enhancement mode. It is rated for a maximum drain-source voltage of 600V, drain current of 9A continuous and 26A single pulsed, and total power dissipation of 41W. Key thermal characteristics include a maximum junction-to-case thermal resistance of 3.04°C/W and junction-to-ambient thermal resistance of 62°C/W.
This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor. The transistor has a maximum static drain-source on-resistance of 0.36 ohms and is enhancement mode. It is rated for a maximum drain-source voltage of 600V, drain current of 9A continuous and 26A single pulsed, and total power dissipation of 41W. Key thermal characteristics include a maximum junction-to-case thermal resistance of 3.04°C/W and junction-to-ambient thermal resistance of 62°C/W.
This document summarizes the specifications of an N-channel MOSFET transistor from INCHANGE Semiconductor. The transistor has a maximum static drain-source on-resistance of 0.36 ohms and is enhancement mode. It is rated for a maximum drain-source voltage of 600V, drain current of 9A continuous and 26A single pulsed, and total power dissipation of 41W. Key thermal characteristics include a maximum junction-to-case thermal resistance of 3.04°C/W and junction-to-ambient thermal resistance of 62°C/W.
